Research activities on crystal growth VICENTE MUÑOZ SANJOSÉ

Research activities
on
crystal growth
VICENTE MUÑOZ SANJOSÉ
Crystal growth and characterization of
semiconductors
UNIVERSITAT DE
VALÈNCIA
Crystal growth laboratory
Bulk crystals
Sample preparation
Epitaxial layers
Crystal growth and characterization of
semiconductors
UNIVERSITAT DE
VALÈNCIA
III-VI Materials
II-VI Materials
Other Materials
Crystal growth and characterization of
semiconductors
UNIVERSITAT
UNIVERSITATDE
DE
VALÈNCIA
VALÈNCIA
III-VI SEMICONDUCTORS
Objectives
• Crystal growth of III-VI materials
Advisory
Prof.
A. Segura
• Study of physical properties
• Physical properties under high presure
Collaborations
Teams of
Prof R. Pareja
Prof. A. Chevy
Actividad investigadora
Crystal growth and characterization of
Semiconductors (III-VI)
UNIVERSITAT
UNIVERSITATDE
DE
VALÈNCIA
VALÈNCIA
“Crecimiento, caracterización y aplicaciones de nuevos
materiales semiconductores” CICYT PA86-294
“Crecimiento, caracterización y aplicaciones de semiconductores
para la óptica no lineal” CICYT MAT90-0242
“Estudio de propiedades estructurales, ópticas, magnéticas
y de transporte de semiconductores bajo altas presiones”
Crystal growth and characterization of
Semiconductors (III-VI)
UNIVERSITAT DE
VALÈNCIA
InSe
GaS
III-VI materials
InxGa1-xSe
GaSe
Dopado
GaTe
Crystal growth and characterization of
Semiconductors (III-VI)
UNIVERSITAT DE
VALÈNCIA
InSe
Bridgman
method
In ten s ity (% )
1,0,1
(2 5 . 9 3 , 1 0 0 . 0 )
100
90
InSe
2 , -1 , 0
(4 5 . 2 8 , 7 7 . 9 )
80
0,0,6
(2 1 . 3 5 , 7 1 . 7 ) 1 , 0 , -2
(2 6 . 6 7 , 6 8 . 2 )
70
1 , 0 , -8
(3 8 . 8 2 , 6 4 . 8 )
60
1,0,10
(4 4 . 7 2 , 5 3 . 6 )
1,0,4
(2 9 . 4 6 , 5 0 . 1 )
50
40
30
1,0,7
1 , 0 , -5 (3 6 . 1 2 , 3 2 . 4 )
(3 1 . 4 0 , 3 0 . 0 )
0,0,3
(1 0 . 6 3 , 2 3 . 2 )
1 , 0 , -1 1
(4 7 . 9 0 , 2 2 . 5 )
20
10
0 , 0 , 1 2 2 , -1 , 3
(4 3 . 5 0 ,(4
3 .66.)6 5 , 2 . 5 )
0,0,9
(3 2 . 2 7 , 3 . 6 )
0
0
5
10
15
20
25
30
35
40
45
    
50
Crystal growth and characterization of
Semiconductors (III-VI)
UNIVERSITAT DE
VALÈNCIA
InSe
Bridgman
method
In ten s ity (% )
1,0,1
(2 5 . 9 3 , 1 0 0 . 0 )
100
90
InSe
2 , -1 , 0
(4 5 . 2 8 , 7 7 . 9 )
80
0,0,6
(2 1 . 3 5 , 7 1 . 7 ) 1 , 0 , -2
(2 6 . 6 7 , 6 8 . 2 )
70
1 , 0 , -8
(3 8 . 8 2 , 6 4 . 8 )
60
1,0,10
(4 4 . 7 2 , 5 3 . 6 )
1,0,4
(2 9 . 4 6 , 5 0 . 1 )
50
40
30
1,0,7
1 , 0 , -5 (3 6 . 1 2 , 3 2 . 4 )
(3 1 . 4 0 , 3 0 . 0 )
0,0,3
(1 0 . 6 3 , 2 3 . 2 )
1 , 0 , -1 1
(4 7 . 9 0 , 2 2 . 5 )
20
10
0 , 0 , 1 2 2 , -1 , 3
(4 3 . 5 0 ,(4
3 .66.)6 5 , 2 . 5 )
0,0,9
(3 2 . 2 7 , 3 . 6 )
0
0
5
10
15
20
25
30
35
40
45
    
50
Crystal growth and characterization of
Semiconductors (III-VI)
UNIVERSITAT DE
VALÈNCIA
GaSe
GaS
GaTe
Bridgman
method
UNIVERSITAT DE
VALÈNCIA
II-VI Materials
Crystal growth and characterization of
Semiconductors
UNIVERSITAT DE
VALÈNCIA
II-VI SEMICONDUCTORS
Objectives
• Crystal growth (bulk and layers)
Advisory
• Alternative methods to the crystal growth and study V. Muñoz-Sanjosé
of optimal conditions
Collaborations
• Hidrodynamical study of growth processes
Teams of
• Study of defects and correlation with growth
conditions
Prof. J.A. García
• Luminescence and cathodoluminescence of II-VI
Prof. J. Piqueras
Prof A. Segura
materials.
•Potential aplications
Actividad investigadora
Crystal growth and characterizartion of
Semiconductors (III-VI)
UNIVERSITAT DE
VALÈNCIA
“Crecimiento cristalino y caracterización de cristales semiconductores
II-VI, aleaciones y materiales semimagnéticos IIVI-MnVI”
(GV-2005/94)
“Crecimiento cristalino caracterización y aplicaciones de compuestos
II-VI y aleaciones” (MAT98-0975-C02-01)
“Crecimiento de capas epitaxiales de semiconductores II-VI y
aleaciones a partir de la pirólisis de compuestos organometálicos
MOCVD. Aplicaciones a la fotodetección” (1FD97-0086)
Crystal growth and characterizartion of
Semiconductors (III-VI)
UNIVERSITAT DE
VALÈNCIA
“Crecimiento cristalino, caracterización y aplicaciones de capas
epitaxiales de semiconductores II-VI
(GV01-536)
“Crecimiento cristalino y caracterización del óxido de zinc”
M .E.C.( MAT 2001-2920-C03-01)
“Semiconductor oxides for UV optoelectronics, surface
acoustics and spintronics
CE (Thematic Network) (G5RT-CT-2002-05075)
Crystal growth and characterizartion of
Semiconductors (III-VI)
UNIVERSITAT DE
VALÈNCIA
“Materiales para la optoelectrónica: el óxido de cinc,
crecimiento cristalino y caracterización.”
Acción integrada hispano-francesa (Picasso) HF2001-0066
“Crecimiento cristalino, caracterización y
aplicaciones de semiconductores II-VI”
Generalitat Valenciana CTGCA/2002/3-7
“Crecimiento cristalino, caracterización y
aplicaciones de capas epitaxiales”
Generalitat Valenciana Acciones Especiales 2003
Crystal growth and characterization of
Semiconductors
UNIVERSITAT DE
VALÈNCIA
HgTe
HgxZn1-xTe
ZnTe
HgxCd1-xTe
II-VI Materials
ZnTexSe1-x
CdTe
CdxZn1-xTe
ZnSe
Crystal growth and characterization of
Semiconductors
UNIVERSITAT DE
VALÈNCIA
CdTe
Bridgman
Method
Crystal growth and characterizartion of
Semiconductors
UNIVERSITAT DE
VALÈNCIA
Substrates:
Sapphire
GaAs
GaS
Glass
Deposition on
ZnO
CdTe
Epitaxial Layers
Evaporatión
MOCVD
Crystal growth and characterizartion of
Semiconductors
UNIVERSITAT DE
VALÈNCIA
Substrates:
Sapphire
Glass
ZnO and CdO
Epitaxial Layers
MOCVD
Crystal growth and characterization of
Semiconductors
UNIVERSITAT DE
VALÈNCIA
HgTe
HgSe
ZnTe
CTHM
Crystal growth and characterization of
Semiconductors
UNIVERSITAT DE
VALÈNCIA
CdxZn1-xTe
CTHM
HgxZn1-xTe
Hg0.85Zn0.15Te
CdxHg1-xTe
Cd0.8Zn0.2Te
Cd0.2Hg0.8Te
Crystal growth and characterization of
Semiconductors
UNIVERSITAT DE
VALÈNCIA
ZnSe
3-LO
1
4-LO
2-LO
1
I
1
I
I
1
2.762 --2.757 ------------------
I
2.8
deep
d
1
I
2
FX
FX n=2
PL Intensity (a.u.)
I
deep
deep
1
deep
I
1-LO
Solid State
Recrystallization
SSR
2.76
2.72
Energy (eV)
2Ar
5Se
10Se
2.68
Crecimiento cristalino
de materiales II-VI
UNIVERSITAT DE
VALÈNCIA
ZnTexSe1-x
ZnSe0.2Te0.8
ZnSexTe1-x
ZnSe0.9Te0.1
Physical Vapour
Transport
Crystal growth of II-VI materials,
Zinc oxide
UNIVERSITAT DE
VALÈNCIA
ZnO
Physical Vapour
Transport
ZnSe0.2Te0.8
A
B
C
D
E
F
ZnSe0.9Te0.1
Crystal growth and characterization of
Semiconductors
UNIVERSITAT DE
VALÈNCIA
Other materials
Objectives
• Crystal growth of semimagnetic materials
• Crystal growth of materials with punctual interest
• New approachs to the growth techniques
• Collaborations
Advisory
V. Muñoz
Collaborations
Teams of
Prof A. Segura
Prof. J.A. García
Dr. I. Terry
Dr. R. Triboulet
UNIVERSITAT DE
VALÈNCIA
Crystal growth and characterization
of semiconductor materials
(semimagnetics and other materials )
Crecimiento cristalino y caracterización de cristales semiconductores
II-VI, aleaciones y materiales semimagnéticos IIVI-MnVI
(GV-2005/94)
UNIVERSITAT DE
VALÈNCIA
Crystal growth and characterization
of semiconductor materials
(semimagnetics and other materials )
HgxMn1-xTe
Zn3P2
MnTe
Other compounds
ZnxCo1-xSe
CdxMn1-xTe
PbTe
UNIVERSITAT DE
VALÈNCIA
Crystal growth and characterization
of semiconductor materials
(semimagnetics and other materials )
Zn3P2
PVT
Intensity (%)
2,2,0
(93.14,100.0)
100
90
80
2,0,3
2,0,2
(101.24,73.1)
(79.87,70.0)
2,1,2
(87.47,60.9)
2,1,1
(74.54,51.6)
70
60
50
40
1,0,1
(37.44,26.7)
30
3,0,2
(118.90,39.7)
0,0,4
(100.76,34.7)
2,1,3
(109.07,30.6)
2,0,1
(66.52,36.3)
1,0,2
(55.15,29.7)
1,0,3
(78.43,18.6)
20
3,0,1
(105.12,18.2)
3,1,0
1,0,4
2,2,2
3,1,1

(108.57,2.4)
(110.58,0.0)
(113.12,0.2)
10
0,0,2
1,1,0
(45.30,0.9)
(42.58,0.2)
0
0
10
20
30
40
50
2,0,0
1,1,2
(61.80,1.1)
(63.92,0.1)
60
70
80
90
100
110
120
Bridgman
Non stochiometric
UNIVERSITAT DE
VALÈNCIA
Crystal growth and characterization
of semiconductor materials
(semimagnetics and other materials )
Zn3P2
PVT
Intensity (%)
2,2,0
(93.14,100.0)
100
90
80
2,0,3
2,0,2
(101.24,73.1)
(79.87,70.0)
2,1,2
(87.47,60.9)
2,1,1
(74.54,51.6)
70
60
50
40
1,0,1
(37.44,26.7)
30
3,0,2
(118.90,39.7)
0,0,4
(100.76,34.7)
2,1,3
(109.07,30.6)
2,0,1
(66.52,36.3)
1,0,2
(55.15,29.7)
1,0,3
(78.43,18.6)
20
3,0,1
(105.12,18.2)
3,1,0
1,0,4
2,2,2
3,1,1

(108.57,2.4)
(110.58,0.0)
(113.12,0.2)
10
0,0,2
1,1,0
(45.30,0.9)
(42.58,0.2)
0
0
10
20
30
40
50
2,0,0
1,1,2
(61.80,1.1)
(63.92,0.1)
60
70
80
90
100
110
120
Bridgman
Non stochiometric
UNIVERSITAT DE
VALÈNCIA
Crystal growth and characterization
of semiconductor materials
(semimagnetics and other materials )
PbTe
THM
y
CTHM
Intensity (%)
2,0,0
(61.80,100.0)
100
90
80
70
60
1,1,1
(52.81,48.5)
50
2,2,0
(93.14,46.8)
40
30
20
3,1,1
(116.77,14.4)
10

0
0
10
20
30
40
50
60
70
80
90
100
110
120
Crystal growth and characterization
of semiconductor materials
(semimagnetics and other materials )
UNIVERSITAT DE
VALÈNCIA
MnTe
THM
Hg0.89Mn 0.11Te
HgxMn1-xTe
UNIVERSITAT DE
VALÈNCIA
Crystal growth and characterization
of semiconductor materials
(semimagnetics and other materials )
CdxMn1-xTe
Zn1-xCoxSe
Bridgman
method
x<0.12
PVT
Cd0.5Mn0,5Te
Cd0.6Mn0,4Te