FCH043N60 N-Channel SuperFET II MOSFET

FCH043N60
N-Channel SuperFET® II MOSFET
600 V, 75 A, 43 mΩ
Features
Description
• 650 V @ TJ = 150°C
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This advanced technology
is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFET II MOSFET
is suitable for various AC/DC power conversion for system
miniaturization and higher efficiency.
• Typ. RDS(on) = 37 mΩ
• Ultra Low Gate Charge (Typ. Qg = 163 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 730 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies
D
G
D
G
S
TO-247
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
15
A
EAR
Repetitive Avalanche Energy
(Note 1)
5.92
mJ
dv/dt
Parameter
- DC
±20
- AC
(f > 1 Hz)
- Continuous (TC = 25oC)
- Pulsed
±30
75
- Continuous (TC = 100oC)
47.5
(TC = 25oC)
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
A
225
A
2025
mJ
100
- Derate Above 25oC
V
(Note 1)
(Note 3)
Power Dissipation
Unit
V
(Note 2)
MOSFET dv/dt
Peak Diode Recovery dv/dt
PD
TL
FCH043N60
600
20
V/ns
592
W
4.74
W/oC
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case, Max.
RθJA
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCH043N60 Rev. C0
FCH043N60
0.21
40
1
Unit
oC/W
www.fairchildsemi.com
FCH043N60 — N-Channel SuperFET® II MOSFET
April 2014
Part Number
FCH043N60
Top Mark
FCH043N60
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 10 mA, VGS = 0 V, TC = 25oC
ID = 10 mA, VGS = 0 V, TC = 150oC
ID = 10 mA, Referenced to 25oC
VDS = 600 V, VGS = 0 V
600
-
-
650
-
-
-
0.67
-
-
-
1
VDS = 480 V, VGS = 0 V, TC = 125oC
-
4.5
-
VGS = ±20 V, VDS = 0 V
-
-
±100
V
V/oC
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
2.5
-
3.5
V
Static Drain to Source On Resistance
VGS = 10 V, ID = 38 A
-
37
43
mΩ
gFS
Forward Transconductance
VDS = 20 V, ID = 38 A
-
73
-
S
VDS = 400 V, VGS = 0 V,
f = 1 MHz
-
9194
12225
pF
-
353
470
pF
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
11
16
Cosseff.
Effective Output Capacitance
VDS = 0 V to 480 V, VGS = 0 V
-
730
-
pF
Qg(tot)
Total Gate Charge at 10V
-
163
215
nC
Qgs
Gate to Source Gate Charge
VDS = 380 V, ID = 38 A,
VGS = 10 V
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
(Note 4)
f = 1 MHz
-
35
-
nC
-
39
-
nC
-
1.1
-
Ω
-
46
102
ns
-
36
82
ns
-
162
334
ns
-
6
-
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 380 V, ID = 38 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
75
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
225
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 38 A
-
-
1.2
V
trr
Reverse Recovery Time
-
605
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 38 A,
dIF/dt = 100 A/μs
-
16
-
μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 15 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 38 A, di/dt ≤ 200 A/μs, VDD ≤ 380V, starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2014 Fairchild Semiconductor Corporation
FCH043N60 Rev. C0
2
www.fairchildsemi.com
FCH043N60 — N-Channel SuperFET® II MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1000
VGS = 10.0V
8.0V
6.0V
5.0V
4.5V
4.0V
100
ID, Drain Current[A]
ID, Drain Current[A]
1000
10
1
100
o
150 C
o
25 C
10
o
-55 C
*Notes:
1. 250μs Pulse Test
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
0.1
0.01
2. TC = 25 C
0.1
1
VDS, Drain-Source Voltage[V]
1
10 20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3
4
5
6
VGS, Gate-Source Voltage[V]
IS, Reverse Drain Current [A]
1000
0.05
VGS = 10V
0.04
VGS = 20V
100
o
150 C
10
1
o
25 C
0.1
*Notes:
1. VGS = 0V
0.01
o
0.03
*Note: TC = 25 C
0
45
90
135
ID, Drain Current [A]
180
0.001
0.0
225
Figure 5. Capacitance Characteristics
10
Capacitances [pF]
1000
10
VGS, Gate-Source Voltage [V]
Ciss
10000
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
0.1
1
10
100
VDS, Drain-Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCH043N60 Rev. C0
2. 250μs Pulse Test
0.3
0.6
0.9
1.2
VSD, Body Diode Forward Voltage [V]
1.5
Figure 6. Gate Charge Characteristics
100000
100
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.06
RDS(ON) [Ω],
Drain-Source On-Resistance
2
VDS = 120V
8
VDS = 300V
6
VDS = 480V
4
2
0
1000
3
*Note: ID = 38A
0
40
80
120
160
Qg, Total Gate Charge [nC]
200
www.fairchildsemi.com
FCH043N60 — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
*Notes:
1. VGS = 0V
2. ID = 10mA
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
0.5
-100
200
Figure 9. Maximum Safe Operating Area
-50
0
50
100
o
TJ, Junction Temperature [ C]
150
Figure 10. Maximum Drain Current
vs. Case Temperature
75
1000
10μs
100
ID, Drain Current [A]
ID, Drain Current [A]
*Notes:
1. VGS = 10V
2. ID = 38A
100μs
1ms
10ms
DC
10
Operation in This Area
is Limited by R DS(on)
1
*Notes:
o
0.1
50
25
1. TC = 25 C
o
0.01
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Eoss vs. Drain to Source Voltage
Switching Capability
45
EOSS, [μJ]
36
27
18
9
0
0
122
244
366
488
VDS, Drain to Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCH043N60 Rev. C0
610
4
www.fairchildsemi.com
FCH043N60 — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics (Continued)
FCH043N60 — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
o
ZθJC(t), Thermal Response [ C/W]
1
0.1
0.5
0.2
PDM
0.1
0.01
t1
0.05
0.02
0.01
Single pulse
0.001
-5
10
©2014 Fairchild Semiconductor Corporation
FCH043N60 Rev. C0
t2
*Notes:
o
1. ZθJC(t) = 0.21 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
-4
10
-3
-2
10
10
Rectangular Pulse Duration [sec]
5
-1
10
1
www.fairchildsemi.com
FCH043N60 — N-Channel SuperFET® II MOSFET
Figure 13. Gate Charge Test Circuit & Waveform
Figure 14. Resistive Switching Test Circuit & Waveforms
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
©2014 Fairchild Semiconductor Corporation
FCH043N60 Rev. C0
6
www.fairchildsemi.com
FCH043N60 — N-Channel SuperFET® II MOSFET
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
©2014 Fairchild Semiconductor Corporation
FCH043N60 Rev. C0
7
www.fairchildsemi.com
FCH043N60 — N-Channel SuperFET® II MOSFET
Mechanical Dimensions
TO-247 3L
Figure 17. TO-247,Molded, 3 Lead, Jedec Variation AB
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
©2014 Fairchild Semiconductor Corporation
FCH043N60 Rev. C0
8
www.fairchildsemi.com
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I68
©2014 Fairchild Semiconductor Corporation
FCH043N60 Rev. C0
9
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FCH043N60 — N-Channel SuperFET® II MOSFET
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