FDMA6023PZT Dual P-Channel PowerTrench MOSFET

FDMA6023PZT
Dual P-Channel PowerTrench® MOSFET
-20 V, -3.6 A, 60 mΩ
Features
General Description
„ Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultraportable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.
„ Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A
„ Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A
„ Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A
„ Low Profile-0.55 mm maximum - in the new package
MicroFET 2x2 mm Thin
„ HBM ESD protection level > 2.4 kV typical (Note 3)
The MicroFET 2X2 Thin package offers exceptional thermal
performance for it’s physical size and is well suited to linear
mode applications.
„ RoHS Compliant
Applications
„ Free from halogenated compounds and antimony oxides
„ Battery protection
„ Battery management
„ Load switch
Pin 1
S1
G1
D1
D1
D2
Q1
D2
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
G2 S2
Q2
MicroFET 2x2
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
-Continuous
ID
TA = 25 °C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
-20
Units
V
±8
V
-3.6
-15
Power Dissipation
TA = 25 °C
(Note 1a)
1.4
Power Dissipation
TA = 25 °C
(Note 1b)
0.7
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1a)
86
RθJA
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1b)
173
RθJA
Thermal Resistance for Dual Operation, Junction to Ambient
(Note 1c)
69
RθJA
Thermal Resistance for Dual Operation, Junction to Ambient
(Note 1d)
151
°C/W
Package Marking and Ordering Information
Device Marking
623
Device
FDMA6023PZT
©2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B1
Package
MicroFET 2X2 Thin
1
Reel Size
7 ’’
Tape Width
8mm
Quantity
3000 units
www.fairchildsemi.com
FDMA6023PZT Dual P-Channel PowerTrench® MOSFET
June 2009
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 µA, VGS = 0 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
µA
IGSS
Gate to Source Leakage Current
VGS = ±8 V, VDS = 0 V
±10
µA
-1.5
V
-20
V
-12
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 µA, referenced to 25 °C
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
-0.4
-0.5
-2.7
mV/°C
VGS = -4.5 V, ID = -3.6 A
40
VGS = -2.5 V, ID = -3.0 A
49
60
80
VGS = -1.8 V, ID = -2.0 A
60
110
VGS = -1.5 V, ID = -1.0 A
70
170
VGS = -4.5 V, ID = -3.6 A,
TJ = 125 °C
58
72
VDD = -5 V, ID = -3.6 A
15
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1 MHz
665
885
pF
115
155
pF
100
150
pF
13
23
ns
11
20
ns
75
120
ns
47
75
ns
12
17
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -10 V, ID = -3.6 A,
VGS = -4.5 V, RGEN = 6 Ω
VGS = 0 V to -4.5 V
VDD = -10 V,
ID = -3.6 A
1.4
nC
5.2
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
©2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B1
VGS = 0 V, IS = -1.1 A
-1.1
(Note 2)
IF = -3.6 A, di/dt = 100 A/µs
2
A
-0.7
-1.2
V
33
53
ns
15
27
nC
www.fairchildsemi.com
FDMA6023PZT Dual P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Notes:
1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the
user's board design.
(a) RθJA= 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
(b) RθJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
(c) RθJA = 69 °C/Wwhen mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For dual operation.
(d) RθJA = 151 °C/W when mounted on a minimum pad of 2 oz copper. For dual operation.
a) 86oC/W when
mounted on a
1in2 pad of 2 oz
copper.
b)173oC/W
when mounted
on a minimum
pad of 2 oz
copper.
c) 69oC/W when
mounted on a
1in2 pad of 2 oz
copper.
d)151oC/W
when mounted
on a minimum
pad of 2 oz
copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B1
3
www.fairchildsemi.com
FDMA6023PZT Dual P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
15
3.0
VGS = -2.0V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -4.5V
VGS = -3.0V
12 VGS = -2.5V
VGS = -1.8V
9
VGS = -1.5V
6
3
PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX
0
0.0
0.5
1.0
1.5
PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX
2.5
VGS = -1.5V
2.0
VGS = -2.0V
VGS = -1.8V
1.5
1.0
2.0
0
3
6
-VDS, DRAIN TO SOURCE VOLTAGE (V)
12
15
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
200
ID = -3.6A
VGS = -4.5V
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (mΩ)
1.6
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
9
-ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX
ID = -3.6A
160
120
TJ = 125oC
80
40
TJ = 25oC
0
1.0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On- Resistance
vs Junction Temperature
10
-IS, REVERSE DRAIN CURRENT (A)
15
PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX
-ID, DRAIN CURRENT (A)
VGS = -4.5V
VGS = -3.0V
VGS = -2.5V
0.5
12
VDS = -5V
9
6
TJ = 125oC
3
TJ = 25oC
0
0.0
0.5
TJ = -55oC
1.0
1.5
2.0
1
TJ = 125oC
0.1
TJ = 25oC
0.01
0.001
0.0
2.5
TJ = -55oC
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B1
VGS = 0V
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
4
www.fairchildsemi.com
FDMA6023PZT Dual P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2000
ID = -3.6A
1000
VDD = -5V
3.0
VDD = -10V
VDD = -15V
1.5
Coss
100
4
8
12
16
1
10
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
20
100
1
P(PK), PEAK TRANSIENT POWER (W)
10
-ID, DRAIN CURRENT (A)
Crss
f = 1MHz
VGS = 0V
50
0.1
0.0
0
Ciss
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE(V)
4.5
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10 ms
SINGLE PULSE
TJ = MAX RATED
1s
10 s
0.1
100 ms
o
RθJA = 173 C/W
DC
TA = 25 oC
0.01
0.1
1
10
50
VGS = -4.5 V
SINGLE PULSE
RθJA = 173 oC/W
TA = 25 oC
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (s)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operation Area
Figure 10. Single Pulse Maximum
Power Dissipation
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
SINGLE PULSE
RθJA = 173 C/W
0.01
0.005
-4
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B1
5
www.fairchildsemi.com
FDMA6023PZT Dual P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMA6023PZT Dual P-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B1
6
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used herein:
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and (c) whose failure to perform when properly used in accordance with
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expected to result in a significant injury of the user.
2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I40
©2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B1
www.fairchildsemi.com
FDMA6023PZT Dual P-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
PowerTrench®
Auto-SPM™
F-PFS™
The Power Franchise®
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®
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Green FPS™ e-Series™
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CTL™
Gmax™
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Current Transfer Logic™
GTO™
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TinyPower™
EfficentMax™
ISOPLANAR™
™
TinyPWM™
Saving our world, 1mW /W /kW at a time™
EZSWITCH™ *
MegaBuck™
TinyWire™
™*
SmartMax™
MICROCOUPLER™
TriFault Detect™
SMART START™
MicroFET™
TRUECURRENT™*
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µSerDes™
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SuperSOT™-3
Motion-SPM™
FACT Quiet Series™
SuperSOT™-6
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OPTOLOGIC®
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OPTOPLANAR®
Ultra FRFET™
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