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FDME510PZT P-Channel PowerTrench MOSFET
FDME510PZT P-Channel PowerTrench® MOSFET -20 V, -6 A, 37 mΩ Features General Description Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -5 A This device is designed specifically for battery charging or load Max rDS(on) = 50 mΩ at VGS = -2.5 V, ID = -4 A switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. Max rDS(on) = 65 mΩ at VGS = -1.8 V, ID = -3 A Max rDS(on) = 100 mΩ at VGS = -1.5 V, ID = -2 A The MicroFET 1.6x1.6 Thin package offers exceptional thermal Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin performance for its physical size and is well suited to switching and linear mode applications. Free from halogenated compounds and antimony oxides HBM ESD protection level > 2400V (Note3) RoHS Compliant G D Pin 1 D S D D D D G S S D D BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings -20 Units V ±8 V -6 -15 Power Dissipation for Single Operation TA = 25 °C (Note 1a) 2.1 Power Dissipation for Single Operation TA = 25 °C (Note 1b) 0.7 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 60 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 175 °C/W Package Marking and Ordering Information Device Marking 7T Device FDME510PZT ©2011 Fairchild Semiconductor Corporation FDME510PZT Rev.C3 Package MicroFET 1.6x1.6 Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com FDME510PZT P-Channel PowerTrench® MOSFET October 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V -20 V -13 mV/°C -1 μA ±10 μA -1.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C rDS(on) gFS Drain to Source On Resistance Forward Transconductance -0.4 -0.5 3 mV/°C VGS = -4.5 V, ID = -5 A 31 37 VGS = -2.5 V, ID = -4 A 38 50 VGS = -1.8 V, ID = -3 A 48 65 VGS = -1.5 V, ID = -2 A 57 100 VGS = -4.5 V, ID = -5 A , TJ = 125 °C 40 60 VDS = -5 V, ID = -5 A 21 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 1120 1490 pF 155 210 pF 140 210 pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = -10 V, ID = -5 A VGS = -4.5 V, RGEN = 6 Ω Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = -10 V, ID = -5 A VGS = -4.5 V 6.5 13 ns 10 16 ns 93 149 ns 54 86 ns 16 22 nC 1.6 nC 4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -1.6 A (Note 2) IF = -5 A, di/dt = 100 A/μs -0.6 -1.2 V 38 61 ns 16 29 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 175 °C/W when mounted on a minimum pad of 2 oz copper. a. 60 °C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDME510PZT Rev.C3 2 www.fairchildsemi.com FDME510PZT P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 3 VGS = -4.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 15 VGS = -3 V -ID, DRAIN CURRENT (A) VGS = -2.5 V VGS = - 1.8 V 10 VGS = -1.5 V 5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.5 1.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = -1.5 V 2 VGS = -1.8 V VGS = -2.5 V 1 0 1.5 0 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 200 ID = -5 A VGS = -4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 150 ID = -5 A 100 TJ = 125 oC 50 TJ = 25 oC 0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 20 -IS, REVERSE DRAIN CURRENT (A) 15 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) 15 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 -50 10 -ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 0.6 -75 VGS = -4.5 V VGS = -3 V VDS = -5 V 10 TJ = 150 oC 5 TJ = 25 oC TJ 0 0.5 1.0 = -55 oC 1.5 VGS = 0 V 10 TJ = 150 oC TJ = 25 oC 1 TJ = -55 oC 0.1 0.2 2.0 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation FDME510PZT Rev.C3 3 1.2 www.fairchildsemi.com FDME510PZT P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = -5 A VDD = -8 V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = -10 V 1.5 VDD = -12 V Ciss 1000 Coss 100 0.0 0 4 8 12 Crss 50 0.1 16 1 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 20 -1 10 10 100 us -Ig, GATE LEAKAGE CURRENT (A) -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 0.1 1s 10 s DC RθJA = 175 oC/W o TA = 25 C 0.01 0.1 1 10 -2 VDS = 0 V 10 -3 10 -4 10 -5 10 TJ = 125 oC -6 10 -7 10 -8 10 TJ = 25 oC -9 10 -10 10 60 -VDS, DRAIN to SOURCE VOLTAGE (V) 0 3 6 9 12 15 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Gate Leakage Current vs Gate to Source Voltage P(PK), PEAK TRANSIENT POWER (W) 500 SINGLE PULSE o RθJA = 175 C/W 100 o TA = 25 C 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (s) Figure 11. ©2011 Fairchild Semiconductor Corporation FDME510PZT Rev.C3 Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDME510PZT P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 175 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDME510PZT Rev.C3 5 www.fairchildsemi.com FDME510PZT P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDME510PZT P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDME510PZT Rev.C3 6 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2011 Fairchild Semiconductor Corporation FDME510PZT Rev.C3 7 www.fairchildsemi.com FDME510PZT P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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