FDME510PZT P-Channel PowerTrench MOSFET

FDME510PZT
P-Channel PowerTrench® MOSFET
-20 V, -6 A, 37 mΩ
Features
General Description
„ Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -5 A
This device is designed specifically for battery charging or load
„ Max rDS(on) = 50 mΩ at VGS = -2.5 V, ID = -4 A
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.
„ Max rDS(on) = 65 mΩ at VGS = -1.8 V, ID = -3 A
„ Max rDS(on) = 100 mΩ at VGS = -1.5 V, ID = -2 A
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
„ Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
performance for its physical size and is well suited to switching
and linear mode applications.
„ Free from halogenated compounds and antimony oxides
„ HBM ESD protection level > 2400V (Note3)
„ RoHS Compliant
G
D
Pin 1
D
S
D
D
D
D
G
S
S
D
D
BOTTOM
TOP
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous
TA = 25 °C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
-20
Units
V
±8
V
-6
-15
Power Dissipation for Single Operation
TA = 25 °C
(Note 1a)
2.1
Power Dissipation for Single Operation
TA = 25 °C
(Note 1b)
0.7
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
60
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
175
°C/W
Package Marking and Ordering Information
Device Marking
7T
Device
FDME510PZT
©2011 Fairchild Semiconductor Corporation
FDME510PZT Rev.C3
Package
MicroFET 1.6x1.6 Thin
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
www.fairchildsemi.com
FDME510PZT P-Channel PowerTrench® MOSFET
October 2013
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = -250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
IGSS
Gate to Source Leakage Current
VGS = ±8 V, VDS = 0 V
-20
V
-13
mV/°C
-1
μA
±10
μA
-1.0
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 μA, referenced to 25 °C
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
-0.4
-0.5
3
mV/°C
VGS = -4.5 V, ID = -5 A
31
37
VGS = -2.5 V, ID = -4 A
38
50
VGS = -1.8 V, ID = -3 A
48
65
VGS = -1.5 V, ID = -2 A
57
100
VGS = -4.5 V, ID = -5 A ,
TJ = 125 °C
40
60
VDS = -5 V, ID = -5 A
21
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1 MHz
1120
1490
pF
155
210
pF
140
210
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
VDD = -10 V, ID = -5 A
VGS = -4.5 V, RGEN = 6 Ω
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -10 V, ID = -5 A
VGS = -4.5 V
6.5
13
ns
10
16
ns
93
149
ns
54
86
ns
16
22
nC
1.6
nC
4
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -1.6 A
(Note 2)
IF = -5 A, di/dt = 100 A/μs
-0.6
-1.2
V
38
61
ns
16
29
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b. 175 °C/W when mounted on a
minimum pad of 2 oz copper.
a. 60 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
©2011 Fairchild Semiconductor Corporation
FDME510PZT Rev.C3
2
www.fairchildsemi.com
FDME510PZT P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
3
VGS = -4.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
15
VGS = -3 V
-ID, DRAIN CURRENT (A)
VGS = -2.5 V
VGS = - 1.8 V
10
VGS = -1.5 V
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
0.5
1.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = -1.5 V
2
VGS = -1.8 V
VGS = -2.5 V
1
0
1.5
0
5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
200
ID = -5 A
VGS = -4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
150
ID = -5 A
100
TJ = 125 oC
50
TJ = 25 oC
0
1.0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
20
-IS, REVERSE DRAIN CURRENT (A)
15
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-ID, DRAIN CURRENT (A)
15
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
-50
10
-ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
0.6
-75
VGS = -4.5 V
VGS = -3 V
VDS = -5 V
10
TJ = 150 oC
5
TJ = 25 oC
TJ
0
0.5
1.0
= -55 oC
1.5
VGS = 0 V
10
TJ = 150 oC
TJ = 25 oC
1
TJ = -55 oC
0.1
0.2
2.0
0.4
0.6
0.8
1.0
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDME510PZT Rev.C3
3
1.2
www.fairchildsemi.com
FDME510PZT P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
5000
ID = -5 A
VDD = -8 V
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE (V)
4.5
3.0
VDD = -10 V
1.5
VDD = -12 V
Ciss
1000
Coss
100
0.0
0
4
8
12
Crss
50
0.1
16
1
10
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
20
-1
10
10
100 us
-Ig, GATE LEAKAGE CURRENT (A)
-ID, DRAIN CURRENT (A)
f = 1 MHz
VGS = 0 V
1 ms
1
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
0.1
1s
10 s
DC
RθJA = 175 oC/W
o
TA = 25 C
0.01
0.1
1
10
-2
VDS = 0 V
10
-3
10
-4
10
-5
10
TJ = 125 oC
-6
10
-7
10
-8
10
TJ = 25 oC
-9
10
-10
10
60
-VDS, DRAIN to SOURCE VOLTAGE (V)
0
3
6
9
12
15
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
Figure 10. Gate Leakage Current vs
Gate to Source Voltage
P(PK), PEAK TRANSIENT POWER (W)
500
SINGLE PULSE
o
RθJA = 175 C/W
100
o
TA = 25 C
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (s)
Figure 11.
©2011 Fairchild Semiconductor Corporation
FDME510PZT Rev.C3
Single Pulse Maximum Power Dissipation
4
www.fairchildsemi.com
FDME510PZT P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 175 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDME510PZT Rev.C3
5
www.fairchildsemi.com
FDME510PZT P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDME510PZT P-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2011 Fairchild Semiconductor Corporation
FDME510PZT Rev.C3
6
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Semiconductor. The datasheet is for reference information only.
Rev. I66
©2011 Fairchild Semiconductor Corporation
FDME510PZT Rev.C3
7
www.fairchildsemi.com
FDME510PZT P-Channel PowerTrench® MOSFET
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