FDMS86163P P-Channel PowerTrench MOSFET

FDMS86163P
P-Channel PowerTrench® MOSFET
-100 V, -50 A, 22 mΩ
Features
General Description
„ Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A
„ Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ Very low RDS-on mid voltage P-channel silicon technology
optimised for low Qg
Applications
„ This product is optimised for fast switching applications as
well as load switch applications
„ Active Clamp Switch
„ 100% UIL tested
„ Load Switch
„ RoHS Compliant
Bottom
Top
Pin 1
S
D
D
D
S
S
G
D
S
D
S
D
S
D
G
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
TC = 25 °C
-Continuous
TA = 25 °C
ID
-Pulsed
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
TC = 25 °C
Power Dissipation
TA = 25 °C
Units
V
±25
V
-50
(Note 1a)
-7.9
(Note 4)
-100
(Note 3)
Power Dissipation
Ratings
-100
486
104
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.2
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS86163P
Device
FDMS86163P
©2014 Fairchild Semiconductor Corporation
FDMS86163P Rev.C
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS86163P P-Channel PowerTrench® MOSFET
May 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = -250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = -80 V, VGS = 0 V
-1
μA
IGSS
Gate to Source Leakage Current
VGS = ±25 V, VDS = 0 V
±100
nA
-4
V
-100
V
-59
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 μA, referenced to 25 °C
6.2
VGS = -10 V, ID = -7.9 A
17.8
rDS(on)
Static Drain to Source On Resistance
VGS = -6 V, ID = -5.9 A
21.3
30
VGS = -10 V, ID = -7.9 A,TJ = 125 °C
29
36
VDS = -10 V, ID = -7.9 A
29
gFS
Forward Transconductance
-2
-2.8
mV/°C
22
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -50 V, VGS = 0 V,
f = 1 MHz
0.1
3070
4085
pF
501
670
pF
21
35
pF
2.6
5.3
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
17
30
ns
tr
Rise Time
8.8
18
ns
td(off)
Turn-Off Delay Time
33
53
ns
tf
Fall Time
6.9
14
ns
VDD = -50 V, ID = -7.9 A,
VGS = -10 V, RGEN = 6 Ω
Qg
Total Gate Charge
VGS = 0 V to -10 V
42
59
nC
Qg
Total Gate Charge
VGS = 0 V to -6 V
26
37
nC
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -50 V,
ID = -7.9 A
11.8
nC
7.1
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -7.9 A
(Note 2)
-0.81
-1.3
VGS = 0 V, IS = -2 A
(Note 2)
-0.75
-1.2
IF = -7.9 A, di/dt = 100 A/μs
V
63
102
ns
132
210
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; P-ch: L = 3 mH, IAS = -18 A, VDD = -100 V, VGS = -10 V. 100% test at L = 0.1 mH, IAS = -58 A.
4. Pulse Id refers to Figure.11 Forward Bias Safe Operation Area.
©2014 Fairchild Semiconductor Corporation
FDMS86163P Rev.C
2
www.fairchildsemi.com
FDMS86163P P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
4
100
-ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = -6 V
VGS = -10 V
80
VGS = -5.5 V
60
VGS = -5 V
40
20
VGS = -4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
VGS = -4.5 V
VGS = -5 V
3
VGS = -5.5 V
2
VGS = -6 V
1
0
0
5
20
Figure 1. On Region Characteristics
60
80
100
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
80
ID = -7.9 A
VGS = -10 V
1.8
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
SOURCE ON-RESISTANCE (mΩ)
2.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
60
ID = -7.9 A
TJ = 125 oC
40
20
TJ = 25 oC
0
-50
3
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
4
5
6
7
8
9
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
100
100
-IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-ID, DRAIN CURRENT (A)
VGS = -10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80
VDS = -5 V
60
TJ = 150 oC
40
TJ = 25 oC
20
TJ = -55 oC
0
2
3
4
5
6
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
7
0.2
0.4
0.6
0.8
1.0
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2014 Fairchild Semiconductor Corporation
FDMS86163P Rev.C
3
1.2
www.fairchildsemi.com
FDMS86163P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
10000
ID = -7.9 A
VDD = -50 V
Ciss
8
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = -75 V
VDD = -25 V
6
4
1000
Coss
100
Crss
2
f = 1 MHz
VGS = 0 V
0
0
10
20
30
40
10
0.1
50
1
10
100
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
60
100
o
-ID, DRAIN CURRENT (A)
-IAS, AVALANCHE CURRENT (A)
RθJC = 1.2 C/W
TJ = 25 oC
TJ = 100 oC
10
TJ = 125 oC
50
40
VGS = -10 V
30
VGS = -6 V
20
10
1
0.001
0.01
0.1
1
10
100
0
25
1000
75
100
125
150
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
500
20000
P(PK), PEAK TRANSIENT POWER (W)
-ID, DRAIN CURRENT (A)
50
o
tAV, TIME IN AVALANCHE (ms)
100 µs
10
THIS AREA IS
LIMITED BY rDS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
1
RθJC = 1.2 oC/W
TC = 25 oC
10 ms
CURVE BENT TO
MEASURED DATA
DC
0.1
1
10
100
200
TC = 25 oC
1000
100
50
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
©2014 Fairchild Semiconductor Corporation
FDMS86163P Rev.C
SINGLE PULSE
RθJC = 1.2 oC/W
10000
10 µs
100
4
www.fairchildsemi.com
FDMS86163P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
0.005
-5
10
-4
10
-3
-2
10
10
-1
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2014 Fairchild Semiconductor Corporation
FDMS86163P Rev.C
5
www.fairchildsemi.com
FDMS86163P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS86163P P-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
5.20
4.90
A
PKG
CL
8
B
5
0.35
0.15
SEE
DETAIL B
0.30
0.10
6.25
5.90
PKG CL
5.85
5.65
DETAIL B
1
SCALE: 2:1
4
TOP VIEW
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
OF THE PACKAGE
5.00
4.80
SEE
DETAIL C
0.10 C
0.05
0.00
8X
SIDE VIEW
0.08 C
1.10
0.90
3.81
1.27
0.51 (8X)
0.31
2
3
0.10
C A B
4
0.76
0.44
(0.52)
3.58
3.38
(0.50)
(3.40)
(0.30)
4.22
3.99
(2X)
8
DETAIL C
C
SEATING
PLANE
SCALE: 2:1
(0.34)
1
0.35
0.15
7
6
3.92
3.66
5
0.64
0.34
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-240, ISSUE A, VAR. AA,
DATED OCTOBER 2002.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-1994.
E) IT IS RECOMMENDED TO HAVE NO
TRACES OR VIAS WITHIN THE KEEP
OUT AREA.
F) DRAWING FILE NAME: PQFN08AREV7.
G) FAIRCHILD SEMICONDUCTOR
BOTTOM VIEW
OPTION - B (PUNCHED TYPE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_PQOAM-008.
©2014 Fairchild Semiconductor Corporation
FDMS86163P Rev.C
6
www.fairchildsemi.com
tm
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As used here in:
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I68
©2014 Fairchild Semiconductor Corporation
FDMS86163P Rev.C
7
www.fairchildsemi.com
FDMS86163P P-Channel PowerTrench® MOSFET
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