FDMS86350 N-Channel PowerTrench MOSFET

FDMS86350
N-Channel PowerTrench® MOSFET
80 V, 130 A, 2.4 mΩ
Features
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A
„ Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Applications
„ MSL1 robust package design
„ Primary MOSFET
„ 100% UIL tested
„ Synchronous Rectifier
„ RoHS Compliant
„ Load Switch
„ Motor Control Switch
Bottom
Top
S
Pin 1
D
D
D
S
S
Pin 1
S
D
G
S
D
S
D
G
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
TC = 25 °C
-Continuous
TA = 25 °C
ID
-Pulsed
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
TC = 25 °C
Power Dissipation
TA = 25 °C
Units
V
±20
V
130
(Note 1a)
25
(Note 4)
300
(Note 3)
Power Dissipation
Ratings
80
864
156
(Note 1a)
Operating and Storage Junction Temperature Range
2.7
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
0.8
(Note 1a)
45
°C/W
Package Marking and Ordering Information
Device Marking
FDMS86350
Device
FDMS86350
©2013 Fairchild Semiconductor Corporation
FDMS86350 Rev. C2
Package
Power 56
Reel Size
13 ’’
1
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS86350 N-Channel PowerTrench® MOSFET
November 2013
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 64 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4.5
V
80
V
45
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 25 A
2.0
2.4
rDS(on)
Static Drain to Source On Resistance
VGS = 8 V, ID = 22 A
2.5
3.2
VGS = 10 V, ID = 25 A, TJ = 125 °C
3.1
3.8
VDS = 5 V, ID = 25 A
70
gFS
Forward Transconductance
2.5
3.8
-12
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 40 V, VGS = 0 V,
f = 1 MHz
0.1
8030
10680
pF
1370
1825
pF
31
50
pF
1.1
3
Ω
50
80
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
VDD = 40 V, ID = 25 A,
VGS = 10 V, RGEN = 6 Ω
34
55
ns
40
65
ns
11
20
ns
Total Gate Charge
VGS = 0 V to 10 V
110
155
nC
VGS = 0 V to 8 V
90
127
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 40 V,
ID = 25 A
nC
46
nC
23
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
(Note 2)
0.71
1.2
VGS = 0 V, IS = 25 A
(Note 2)
0.79
1.3
IF = 25 A, di/dt = 100 A/μs
V
63
101
ns
62
100
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 45 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 115 °C/W when mounted on a
minimum pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 864 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 24 A, VDD = 80 V, VGS = 10 V, 100% test at L = 0.1 mH, IAS = 74 A.
4. Pulse Id limited by junction temperature, td <= 100 μs, please refer to SOA curve for more details.
©2013 Fairchild Semiconductor Corporation
FDMS86350 Rev. C2
2
www.fairchildsemi.com
FDMS86350 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
300
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
250
ID, DRAIN CURRENT (A)
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 8 V
200
VGS = 7 V
150
VGS = 6.5 V
100
VGS = 6 V
50
0
0
1
2
3
4
VGS = 6 V
4
VGS = 6.5 V
3
VGS = 7 V
2
VGS = 8 V
1
0
5
0
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
250
300
10
ID = 25 A
VGS = 10 V
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
100
150
200
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
300
ID = 25 A
6
TJ = 125 oC
4
2
TJ = 25 oC
5
8
9
IS, REVERSE DRAIN CURRENT (A)
TJ = 150 oC
100
TJ = 25 oC
50
TJ = -55 oC
0
6
7
100
VGS = 0 V
10
TJ = 150 oC
1
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
8
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2013 Fairchild Semiconductor Corporation
FDMS86350 Rev. C2
10
500
150
5
7
Figure 4. On-Resistance vs Gate to
Source Voltage
VDS = 5 V
4
6
VGS, GATE TO SOURCE VOLTAGE (V)
200
3
8
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
250
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
-50
Figure 3. Normalized On- Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
1.2
www.fairchildsemi.com
FDMS86350 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE (V)
10
10000
Ciss
VDD = 40 V
ID = 25 A
CAPACITANCE (pF)
8
VDD = 50 V
VDD = 30 V
6
4
Coss
1000
100
2
f = 1 MHz
VGS = 0 V
0
0
20
40
60
80
100
Crss
10
0.1
120
1
10
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
200
100
o
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
RθJC = 0.8 C/W
TJ = 25 oC
10
TJ = 100
oC
TJ = 125 oC
1
0.01
0.1
1
10
100
160
120
VGS = 10 V
80
40
0
25
1000
50
75
100
150
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000
P(PK), PEAK TRANSIENT POWER (W)
20000
SINGLE PULSE
RθJC = 0.8 oC/W
10000
100
10
125
o
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
VGS = 8 V
Limited by Package
10 μs
THIS AREA IS
LIMITED BY rDS(on)
100 μs
SINGLE PULSE
TJ = MAX RATED
1 ms
1
RθJC = 0.8 oC/W
TC = 25 oC
0.1
0.1
10 ms
CURVE BENT TO
MEASURED DATA
1
10
DC
100
300
VDS, DRAIN to SOURCE VOLTAGE (V)
1000
100
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2013 Fairchild Semiconductor Corporation
FDMS86350 Rev. C2
TC = 25 oC
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS86350 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 0.8 °C/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
-5
10
-4
10
-3
-2
10
10
-1
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDMS86350 Rev. C2
5
www.fairchildsemi.com
FDMS86350 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS86350 N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2013 Fairchild Semiconductor Corporation
FDMS86350 Rev. C2
6
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2013 Fairchild Semiconductor Corporation
FDMS86350 Rev. C2
7
www.fairchildsemi.com
FDMS86350 N-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Sync-Lock™
F-PFS™
®
AX-CAP®*
FRFET®
®*
Global Power ResourceSM
PowerTrench®
BitSiC™
Build it Now™
GreenBridge™
PowerXS™
TinyBoost®
CorePLUS™
Green FPS™
Programmable Active Droop™
TinyBuck®
CorePOWER™
Green FPS™ e-Series™
QFET®
TinyCalc™
CROSSVOLT™
QS™
Gmax™
TinyLogic®
CTL™
Quiet Series™
GTO™
TINYOPTO™
Current Transfer Logic™
RapidConfigure™
IntelliMAX™
TinyPower™
DEUXPEED®
ISOPLANAR™
™
TinyPWM™
Marking Small Speakers Sound Louder
Dual Cool™
TinyWire™
and Better™
EcoSPARK®
Saving our world, 1mW/W/kW at a time™
TranSiC™
EfficentMax™
MegaBuck™
SignalWise™
TriFault Detect™
ESBC™
MICROCOUPLER™
SmartMax™
TRUECURRENT®*
MicroFET™
SMART
START™
®
μSerDes™
MicroPak™
Solutions for Your Success™
MicroPak2™
SPM®
Fairchild®
STEALTH™
MillerDrive™
Fairchild Semiconductor®
UHC®
SuperFET®
MotionMax™
FACT Quiet Series™
®
Ultra FRFET™
®
mWSaver
SuperSOT™-3
FACT
UniFET™
OptoHiT™
SuperSOT™-6
FAST®
VCX™
OPTOLOGIC®
SuperSOT™-8
FastvCore™
VisualMax™
OPTOPLANAR®
SupreMOS®
FETBench™
VoltagePlus™
SyncFET™
FPS™
XS™