FDN304PZ P-Channel 1.8V Specified PowerTrench MOSFET

FDN304PZ
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
• –2.4 A, –20 V.
Applications
• Fast switching speed
• Battery management
• ESD protection diode
• Load switch
• High performance trench technology for extremely
low RDS(ON)
• Battery protection
RDS(ON) = 52 mΩ @ VGS = –4.5 V
RDS(ON) = 70 mΩ @ VGS = –2.5 V
RDS(ON) = 100 mΩ @ VGS = –1.8 V
• SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
D
D
S
TM
SuperSOT -3
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
– Continuous
(Note 1a)
– Pulsed
PD
Ratings
Units
–20
V
±8
V
–2.4
A
–10
Maximum Power Dissipation
TJ, TSTG
S
G
G
(Note 1a)
0.5
(Note 1b)
0.46
Operating and Storage Junction Temperature Range
–55 to +150
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
250
°C/W
(Note 1)
75
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
04Z
FDN304PZ
7’’
8mm
3000 units
2003 Fairchild Semiconductor Corporation
FDN304PZ Rev C (W)
FDN304PZ
March 2003
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
–13
mV/°C
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA,Referenced to 25°C
IGSS
Gate–Body Leakage
VGS = ±8 V, VDS = 0 V
On Characteristics
VDS = –16 V,
–20
V
VGS = 0 V
–1
µA
±10
uA
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA,Referenced to 25°C
3
On–State Drain Current
ID = –2.4 A
ID = –2.0 A
ID = –1.8 A
VDS = –5 V
36
47
65
ID(on)
VGS = –4.5 V,
VGS = –2.5 V,
VGS = –1.8V,
VGS = –4.5 V,
gFS
Forward Transconductance
VDS = –5 V,
ID = –1.25 A
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
–0.4
–0.8
–1.5
V
mV/°C
52
70
100
–10
mΩ
A
12
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
1310
pF
240
pF
106
pF
VGS = 15 mV, f = 1.0 MHz
5.6
Ω
VDD = –10 V,
VGS = –4.5 V,
15
27
ns
15
27
ns
ns
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
40
64
tf
Turn–Off Fall Time
25
40
ns
Qg
Total Gate Charge
12
20
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –10 V,
VGS = –4.5 V
ID = –1 A,
RGEN = 6 Ω
ID = –2.4 A,
2
nC
2
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
trr
Drain–Source Diode Forward
Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V,
IS = –0.42
(Note 2)
IF = –2.4 A,
diF/dt = 100 A/µs
–0.6
–0.42
A
–1.2
V
18
ns
7
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDN304PZ Rev C (W)
FDN304PZ
Typical Characteristics
3
10
-2.5V
-2.0V
-3.0V
8
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -4.5V
-6.0V
6
4
2
-1.5V
2.5
VGS = -2.0V
2
-2.5V
1.5
-3.0V
-4.5V
-10.0V
0.5
0
0.5
1
1.5
0
2
2
4
6
8
10
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.14
1.4
ID = -1.2 A
ID = -2.4A
VGS = -4.5V
1.3
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-6.0V
1
0
1.2
1.1
1
0.9
0.8
-50
-25
0
25
50
75
100
0.12
0.1
0.08
TA = 125oC
0.06
TA = 25oC
0.04
0.02
125
0
TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
-IS, REVERSE DRAIN CURRENT (A)
10
VDS = - 5V
-ID, DRAIN CURRENT (A)
-3.5V
8
6
4
o
TA =
-55 C
125oC
2
o
25 C
0.5
1
1.5
1
TA = 125oC
0.1
25oC
0.01
o
-55 C
0.001
0.0001
0
0
VGS = 0V
10
2
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN304PZ Rev C (W)
FDN304PZ
Typical Characteristics
1600
ID = -2.4A
f = 1MHz
VGS = 0 V
VDS = -5V
4
-10V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
5
3
-15V
2
1200
Ciss
800
Coss
400
1
Crss
0
0
0
2
4
6
8
10
12
14
0
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
15
20
Figure 8. Capacitance Characteristics.
20
P(pk), PEAK TRANSIENT POWER (W)
100
RDS(ON)
LIMIT
1ms
10
10ms
100ms
1
1s
10s
DC
VGS =-4.5V
SINGLE PULSE
RθJA = 250oC/W
0.1
o
TA = 25 C
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 250°C/W
TA = 25°C
15
10
5
0
0.001
0.01
0.1
-VDS, DRAIN-SOURCE VOLTAGE (V)
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
-ID, DRAIN CURRENT (A)
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 250 °C/W
0.2
0.1
0.1
0.05
0.02
0.01
P(pk)
t1
t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN304PZ Rev C (W)
TRADEMARKS
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2