FDPF390N15A N-Channel PowerTrench MOSFET 150 V, 15 A, 40 mΩ

FDPF390N15A
N-Channel PowerTrench® MOSFET
150 V, 15 A, 40 mΩ
Features
Description
• RDS(on) = 31 mΩ (Typ.) @ VGS = 10 V, ID = 15 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been tailored to minimize the on-state resistance while
maintain-ing superior switching performance.
• Fast Switching Speed
• Low Gate Charge, QG = 14.3 nC (Typ.)
Applications
• High Performance Trench Technology for Extremely Low
RDS(on)
• Consumer Appliances
• High Power and Current Handling Capability
• LED TV
• RoHS Compliant
• Synchronous Rectification
• Uninterruptible Power Supply
• Motor Solar Inverter
D
G
G
D
S
TO-220F
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted.
Parameter
Symbol
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
FDPF390N15A
150
Unit
V
±20
V
- Continuous (TC = 25oC,Silicon Limited)
15
- Continuous (TC = 100oC,Silicon Limited)
- Pulsed
(Note 1)
10
60
A
(Note 2)
78
mJ
(Note 3)
6.0
V/ns
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds.
- Derate above 25oC
A
22
W
0.18
W/oC
-55 to +175
oC
300
oC
Thermal Characteristics
Symbol
Parameter
FDPF390N15A
RθJC
Thermal Resistance, Junction to Case, Max.
5.7
RθJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
1
Unit
oC/W
www.fairchildsemi.com
FDPF390N15A — N-Channel PowerTrench® MOSFET
December 2013
Part Number
FDPF390N15A
Top Mark
FDPF390N15A
Electrical Characteristics
Symbol
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
TC = 25°C unless otherwise noted.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
150
-
-
V
-
0.1
-
V/oC
µA
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, Referenced to 25oC
VDS = 120 V, VGS = 0 V
-
-
1
VDS = 120 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
-
-
500
-
-
±100
2.0
-
4.0
V
-
31
40
mΩ
-
32
-
S
-
965
1285
pF
-
96
130
pF
pF
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 µA
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10 V, ID = 15A
VDS = 10 V, ID = 15 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss(er)
Energy Related Output Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance (G-S)
VDS = 75 V, VGS = 0 V
f = 1 MHz
-
VDS = 75 V,VGS = 0 V
VDS = 75 V,ID = 27 A
VGS = 10 V
(Note 4)
f = 1 MHz
5.8
-
169
-
pF
14.3
18.6
nC
5.0
-
nC
-
2.0
-
nC
-
3.5
-
nC
-
1.4
-
Ω
-
14
38
ns
-
10
30
ns
-
20
50
ns
-
5
20
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 75 V, ID = 27 A
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
15
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
64
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 15 A
-
-
1.25
V
trr
Reverse Recovery Time
63
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 27 A
dIF/dt = 100 A/µs
-
131
-
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. Starting TJ = 25°C, L = 3 mH, ISD = 7.2 A
3. ISD ≤ 15 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C
4. Essentially independent of operating temperature typical characteristics.
©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
2
www.fairchildsemi.com
FDPF390N15A — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
200
200
VGS = 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
*Notes:
1. VDS = 10V
2. 250µs Pulse Test
100
ID, Drain Current[A]
ID, Drain Current[A]
100
10
10
o
150 C
o
25 C
o
-55 C
*Notes:
1. 250µs Pulse Test
o
2. TC = 25 C
1
0.1
1
1
VDS, Drain-Source Voltage[V]
5
2
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3
4
5
6
7
VGS, Gate-Source Voltage[V]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
80
200
IS, Reverse Drain Current [A]
RDS(ON) [mΩ],
Drain-Source On-Resistance
100
60
VGS = 10V
40
VGS = 20V
o
o
25 C
150 C
10
*Notes:
1. VGS = 0V
o
20
*Note: TC = 25 C
0
20
40
60
ID, Drain Current [A]
80
2. 250µs Pulse Test
1
0.4
100
Figure 5. Capacitance Characteristics
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
1.3
Figure 6. Gate Charge Characteristics
2000
10
VGS, Gate-Source Voltage [V]
1000
Capacitances [pF]
Ciss
100
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
0.1
1
10
VDS, Drain-Source Voltage [V]
©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
Crss
VDS = 30V
VDS = 75V
VDS = 120V
8
6
4
2
*Note: ID = 27A
0
100 200
3
0
4
8
12
Qg, Total Gate Charge [nC]
16
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FDPF390N15A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 8. On-Resistance Variation
vs. Temperature
1.10
2.6
1.08
2.4
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.04
1.00
0.96
*Notes:
1. VGS = 0V
2. ID = 250µA
0.92
-80
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
2.0
1.6
1.2
*Notes:
1. VGS = 10V
2. ID = 15A
0.8
0.4
-80
160
Figure 9. Maximum Safe Operating Area
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
Figure 10. Maximum Drain Current
vs. Case Temperature
300
16
100
VGS= 10V
100µs
10
ID, Drain Current [A]
ID, Drain Current [A]
160
1ms
10ms
100ms
1
Operation in This Area
is Limited by R DS(on)
0.1
DC
*Notes:
o
1. TC = 25 C
0.01
12
8
4
o
2. TJ = 150 C
3. Single Pulse
0.001
10
100
VDS, Drain-Source Voltage [V]
1
o
RθJC =5.7 C/W
0
25
200
Figure 11. Eoss vs. Drain to Source Volatage
IAS, AVALANCHE CURRENT (A)
, [µJ]
OSS
1.0
0.8
0.6
0.4
0.2
0
30
60
90
120
VDS, Drain to Source Voltage [V]
©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
150
Figure 12. Unclamped Inductive
Switching Capability
1.2
0.0
50
75
100
125
o
TC, Case Temperature [ C]
12
10
o
STARTING TJ = 25 C
o
STARTING TJ = 150 C
1
0.01
150
4
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
0.1
1
tAV, TIME IN AVALANCHE (ms)
10 20
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FDPF390N15A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDPF390N15A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
ZθJC(t), Thermal Response [oC/W]
8
0.5
1
0.2
0.1
PDM
0.05
t1
0.02
0.1
t2
0.01
*Notes:
0.01 -5
10
©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
o
1. ZθJC(t) = 5.7 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
-4
10
-3
-2
-1
10
10
10
1
Rectangular Pulse Duration [sec]
5
10
100
www.fairchildsemi.com
FDPF390N15A — N-Channel PowerTrench® MOSFET
50KΩ
50K
Ω
200nF
200n
F
12V
VGS
Same
Same Type
as DU
DUT
T
Qg
10V
300nF
300n
F
VDS
VGS
Qgs
Qgd
DUT
DU
T
IG = const.
Charrge
Cha
Figure 14. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
DUT
VGS
10%
10%
td(on
d( on))
tr
td(o
d( of f)
t on
t of
offf
tf
Figure 15. Resistive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDS
DSS
S - VDD
L
BVDS
DSS
S
IAS
ID
RG
VGS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
tp
Ti
Tim
me
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
6
www.fairchildsemi.com
FDPF390N15A — N-Channel PowerTrench® MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
7
www.fairchildsemi.com
FDPF390N15A — N-Channel PowerTrench® MOSFET
Mechanical Dimensions
Figure 18. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
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©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
8
www.fairchildsemi.com
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Semiconductor. The datasheet is for reference information only.
Rev. I66
©2011 Fairchild Semiconductor Corporation
FDPF390N15A Rev C1
9
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FDPF390N15A — N-Channel PowerTrench® MOSFET
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