FDC642P Single P-Channel 2.5V Specified PowerTrench MOSFET

FDC642P
Single P-Channel 2.5V Specified PowerTrench® MOSFET
-20 V, -4.0 A, 65 mΩ
Features
General Description
„ Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A
This P-Channel 2.5V specified MOSFET is produced using
Fairchild’s advanced PowerTrench® process that has been
especially tailored to minimize on-state resistance and yet
maintain low gate charge for superior switching performance.
„ Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A
„ Fast switching speed
„ Low gate charge (11nC typical)
These devices have been designed to offer exceptional power
dissipation in a very small footprint for applications where the
larger packages are impractical.
„ High performance trench technology for extremely low rDS(on)
„ SuperSOTTM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1 mm thick)
Applications
„ Termination is Lead-free and RoHS Compliant
„ Load switch
„ Battery protection
„ Power management
D
D
D
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
-Continuous
ID
TA = 25°C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
-20
Units
V
±8
V
-4.0
-20
Power Dissipation
( Note 1a)
1.6
Power Dissipation
(Note 1b)
0.8
Operating and Storage Junction Temperature Range
A
W
-55 to + 150
°C
78
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
.642
Device
FDC642P
©2010 Fairchild Semiconductor Corporation
FDC642P Rev.C2
Package
SSOT-6TM
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
www.fairchildsemi.com
FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET
January 2010
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 µA, VGS = 0 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
µA
IGSS
Gate to Source Leakage Current
VGS = ±8 V, VDS = 0 V
±10
µA
-1.5
V
-20
V
-13
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 µA, referenced to 25°C
VGS = -4.5 V, ID = -4.0 A
45
65
Static Drain to Source On Resistance
VGS = -2.5 V, ID = -3.2 A
55
100
VGS = -4.5 V, ID = -4.0 A,
TJ = 125°C
62
90
VDS = -5 V, ID = -4.0 A
15
rDS(on)
gFS
Forward Transconductance
-0.4
-0.6
2.5
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1 MHz
700
925
pF
110
150
pF
95
145
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -10 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6 Ω
VDD = -10 V, ID = -4 A
VGS = --4.5 V
6
12
ns
7
14
ns
120
190
ns
52
83
ns
11
16
nC
1.1
nC
3.0
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Source-Drain Diode Forward Voltage
VGS = 0 V, IS = -1.3 A
(Note 2)
-0.7
-1.3
A
-1.2
V
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user’s board design.
a. 78 °C/W when mounted on a 1 in2 pad of 2 oz copper.
b. 156°C/W when mounted on a minimum pad of 2 oz copper.
2: Pulse Test: Pulse Width<300 us, Duty Cycle<2.0%.
©2010 Fairchild Semiconductor Corporation
FDC642P Rev.C2
2
www.fairchildsemi.com
FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
-ID, DRAIN CURRENT (A)
VGS = -4.5 V
VGS = -3.5 V
16
VGS = -2.0 V
VGS = -3.0 V
VGS = -2.5 V
12
5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
20
8
VGS = -1.5 V
4
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
4
VGS = -1.5 V
3
VGS = -2.0 V
2
1
VGS = -3.0 V VGS = -3.5 V
0
0
1
2
3
4
VGS = -2.5 V
0
5
0
4
Figure 1. On Region Characteristics
180
rDS(on), DRAIN TO
ID = -4.0 A
VGS = -4.5 V
1.2
1.0
0.8
0.6
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
12
16
20
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
150
ID = -4.0 A
120
90
TJ = 125 oC
60
TJ = 25 oC
30
1.0
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
20
-IS, REVERSE DRAIN CURRENT (A)
10
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
-ID, DRAIN CURRENT (A)
8
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
1.4
VGS = -4.5 V
16
VDS = -5 V
12
8
TJ = 150 oC
4
TJ = 25 oC
TJ = -55 oC
0
0.5
1.0
1.5
2.0
2.5
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.2
3.0
-VGS, GATE TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2010 Fairchild Semiconductor Corporation
FDC642P Rev.C2
VGS = 0 V
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2000
ID = -4.0 A
4.0
Ciss
1000
3.5
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE (V)
4.5
3.0
VDD = -5 V
2.5
VDD = -10 V
2.0
VDD = -15 V
1.5
Coss
100
Crss
1.0
f = 1 MHz
VGS = 0 V
0.5
0.0
0
3
6
9
10
0.1
12
1
Figure7. Gate Charge Characteristics
20
Figure 8. Capacitance vs Drain
to Source Voltage
50
1000
10
P(PK), PEAK TRANSIENT POWER (W)
-ID, DRAIN CURRENT (A)
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
100 µs
1 ms
1
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
1s
SINGLE PULSE
TJ = MAX RATED
0.1
10 s
DC
RθJA = 156 oC/W
0.01
0.1
TA = 25 oC
1
10
VGS = -4.5 V
100
10
SINGLE PULSE
RθJA = 156 oC/W
1
TA = 25 oC
0.5
-4
10
60
-3
10
-2
10
-VDS, DRAIN to SOURCE VOLTAGE (V)
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 9. Forward Bias Safe
Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 156 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDC642P Rev.C2
4
www.fairchildsemi.com
FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I46
©2009 Fairchild Semiconductor Corporation
FDC642P Rev. C2
5
www.fairchildsemi.com
FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET
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