FDS6673BZ P-Channel PowerTrench MOSFET

FDS6673BZ
P-Channel PowerTrench® MOSFET
-30V, -14.5A, 7.8m:
General Description
Features
This P-Channel MOSFET is produced using Fairchild
„ Max rDS(on) = 7.8m:VGS = -10V, ID = -14.5A
Semiconductor’s advanced Power Trench process that
„ Max rDS(on) = 12m:VGS = -4.5V, ID = -12A
has been especially tailored to minimize the on-state
resistance.
„ Extended VGS range (-25V) for battery applications
This device is well suited for Power Management and
„ HBM ESD protection level of 6.5kV typical (note 3)
load
switching
applications
common
in
Notebook
„ High performance trench technology for extremely low
rDS(on)
Computers and Portable Battery Packs.
„ High power and current handling capability
„ RoHS compliant
D
D
D
D
SO-8
S
S
S
5
4
6
3
7
2
8
1
G
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
VGS
ID
Parameter
Ratings
-30
Units
V
Gate to Source Voltage
±25
V
Drain Current -Continuous (Note1a)
-14.5
A
-75
A
-Pulsed
(Note1a)
Power Dissipation for Single Operation
PD
TJ, TSTG
2.5
(Note1b)
1.2
(Note1c)
1.0
Operating and Storage Temperature
W
-55 to 150
°C
Thermal Characteristics
RTJA
Thermal Resistance , Junction to Ambient (Note 1a)
50
°C/W
RTJC
Thermal Resistance , Junction to Case (Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
FDS6673BZ
Device
FDS6673BZ
©2009 Fairchild Semiconductor Corporation
FDS6673BZ Rev. B2
Reel Size
13’’
1
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDS6673BZ P-Channel PowerTrench® MOSFET
March 2009
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250PA, VGS = 0V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = -250PA, referenced to
25°C
-30
V
IDSS
Zero Gate Voltage Drain Current
VDS = -24V, VGS = 0V
-1
PA
IGSS
Gate to Source Leakage Current
VGS = ±25V, VDS = 0V
±10
PA
-3
V
-20
mV/°C
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250PA
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250PA, referenced to
25°C
8.1
VGS = -10V , ID = -14.5A
6.5
7.8
VGS = -4.5V, ID = -12A
9.6
12
VGS = -10V, ID = -14.5A
TJ = 125oC
9.7
12
VDS = -5V, ID = -14.5A
60
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
-1
-1.9
mV/°C
m:
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -15V, VGS = 0V,
f = 1.0MHz
3500
4700
pF
600
800
pF
600
900
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain Charge
VDD = -15V, ID = -1A
VGS = -10V, RGS = 6:
VDS = -15V, VGS = -10V,
ID = -14.5A
VDS = -15V, VGS = -5V,
ID = -14.5A
14
26
ns
16
29
ns
225
36
105
167
ns
88
124
nC
46
65
ns
nC
8
nC
23.5
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A
-1.2
V
trr
Reverse Recovery Time
IF = 14.5A, di/dt = 100A/Ps
-0.7
45
ns
Qrr
Reverse Recovery Charge
IF = 14.5A, di/dt = 100A/Ps
34
nC
Notes:
1: RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RTJC is guaranteed by design while RTCA is determined by the user’s board design.
a) 50 oC/W (10 sec)
when mounted on a 1 in2
pad of 2 oz copper
b) 105 oC/W when mounted
on a .04 in2 pad of 2 oz
copper
c) 125 oC/W when mounted
on a minimun pad
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%.
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
2
FDS6673BZ Rev. B2
www.fairchildsemi.com
FDS6673BZ P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
70
60
VGS = -4V
50
VGS = -10V
VGS = -5V
40
VGS = -4.5V
30
VGS = -3.5V
20
VGS = -3V
10
0
0
1
2
3
-VDS, DRAIN TO SOURCE VOLTAGE (V)
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
80
4
Figure 1. On Region Characteristics
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS = -4V
VGS = -4.5V
VGS = -5V
VGS = -10V
20
30
40
50
60
-ID, DRAIN CURRENT(A)
70
80
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
25
1.5
VGS = -10V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
ON-RESISTANCE (m:)
rDS(on), DRAIN TO SOURCE
ID = -14.5A
1.4
ID = -7A PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
20
TJ = 150oC
15
10
TJ = 25oC
5
0
0.6
-80
-40
0
40
80
120
2
160
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. Normalized On Resistance vs Junction
Temperature
-IS, REVERSE DRAIN CURRENT (A)
VDS = -6V
TJ = 150oC
40
TJ = 25oC
20
TJ = -55oC
0
2.0
2.5
3.0
3.5
4.0
VGS = 0V
10
TJ = 150oC
1
TJ = 25oC
0.1
TJ = -55oC
0.01
1E-3
0.0
4.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
FDS6673BZ Rev. B2
10
100
00
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5% MAX
60
4
6
8
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to Source
Voltage
80
-ID, DRAIN CURRENT (A)
VGS = -3.5V
www.fairchildsemi.com
FDS6673BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
6000
8
VDD = -10V
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = -15V
6
VDD = -20V
4
Ciss
Coss
1000
Crss
2
f = 1MHz
VGS = 0V
0
0
20
40
60
80
100
0.1
100
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
-IAS, AVALANCHE CURRENT(A)
100
-Ig(uA)
TJ = 150oC
1
0.1
TJ = 25oC
0.01
1E-3
5
10
15
20
-VGS(V)
25
30
35
Figure 9. Ig vs VGS
TJ = 25oC
TJ = 125oC
-1
10
0
1
3
10
100Ps
12
VGS = -10V
8
VGS = -4.5V
4
10
1
1ms
10 ms
THIS AREA IS
LIMITED BY rDS(on)
0.1
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
10s
DC
RTJA = 125oC/W
TC = 25 C
o
50
75
100
125
0.01
0.01
150
0.1
1
10
100
500
-VDS, DRAIN to SOURCE VOLTAGE (V)
TA, AMBIENT TEMPERATURE(oC)
Figure 11. Maximum Continuous Drain Current vs
Ambient Temperature
Figure 12. Forward Bias Safe Operating Area
4
FDS6673BZ Rev. B2
2
10
10
10
tAV, TIME IN AVALANCHE(ms)
100
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
10
Figure 10. Unclamped Inductive Switching
Capability
16
0
25
30
40
1
-2
10
1E-4
0
10
Figure 8. Capacitance vs Drain to Source Voltage
1000
10
1
-VDS, DRAIN TO SOURCE VOLTAGE (V)
www.fairchildsemi.com
FDS6673BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDS6673BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
4
P(PK), PEAK TRANSIENT POWER (W)
10
VGS = -10V
3
10
2
10
10
SINGLE PULSE
RTJA = 125oC/W
1
0.5
-4
10
TA = 25oC
-3
-2
10
-1
10
10
1
2
10
3
10
10
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
NORMALIZED THERMAL
IMPEDANCE, ZTJA
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
1E-3
1E-4
-4
10
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
o
RTJA = 125 C/W
-3
10
-2
10
-1
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
5
FDS6673BZ Rev. B2
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I39
6
FDS6673BZ Rev. B2
www.fairchildsemi.com
FDS6673BZ P-Channel PowerTrench® MOSFET
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