FDT434P P-Channel 2.5V Specified PowerTrench MOSFET

FDT434P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
• –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V
RDS(ON) = 0.070 Ω @ VGS = –2.5 V.
• Low gate charge (13nC typical)
Applications
• High performance trench technology for extremely
low RDS(ON) .
• Low Dropout Regulator
• High power and current handling capability in a
widely used surface mount package.
• DC/DC converter
• Load switch
• Motor driving
D
D
S
D
G
G
SOT-223
Absolute Maximum Ratings
Symbol
S
D
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
–6
A
– Continuous
(Note 1a)
– Pulsed
PD
–30
Power Dissipation for Single Operation
(Note 1a)
3
(Note 1b)
1.3
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
W
1.1
-55 to +150
°C
(Note 1a)
42
°C/W
(Note 1)
12
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
434
FDT434P
13’’
12mm
2500 units
©2011 Fairchild Semiconductor Corporation
FDT434P Rev. C2
1
www.fairchildsemi.com
FDT434P
April 2011
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
–28
mV/°C
Off Characteristics
–20
V
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA,Referenced to 25°C
VDS = –16 V,
VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage Current,
Forward
Gate–Body Leakage Current,
Reverse
VGS = 8 V,
VDS = 0 V
100
nA
VGS = –8 V
VDS = 0 V
–100
nA
IGSSR
On Characteristics
(Note 2)
–0.4
–0.6
–1
V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA,Referenced to 25°C
2
0.040
0.050
0.067
ID(on)
On–State Drain Current
VGS = –4.5 V, ID = –6 A
VGS = –2.5 V, ID = –4 A
VGS = –4.5 V, ID = –6 A TJ=125°C
VGS = –4.5 V,
VDS = –5 V
gFS
Forward Transconductance
VDS = –10 V,
ID = –6 A
6.5
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
1187
pF
270
pF
114
pF
mV/°C
0.050
0.070
0.083
–20
Ω
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
(Note 2)
VDD = –5 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 Ω
8
16
ns
15
25
ns
ns
td(off)
Turn–Off Delay Time
45
65
tf
Turn–Off Fall Time
30
50
ns
Qg
Total Gate Charge
13
19
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –10 V,
VGS = –4.5 V
ID = –6 A,
1.8
nC
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –2.5 A
(Note 2)
–0.75
–2.5
A
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 42°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 95°/W when mounted
on a .0066 in2 pad of
2 oz copper
c) 110°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
©2011 Fairchild Semiconductor Corporation
FDT434P Rev. C2
2
www.fairchildsemi.com
FDT434P
Electrical Characteristics
FDT434P
Typical Characteristics
1.8
-3.0V
-2.5V
16
RDS(ON) , NORMALIZED
-ID, DRAIN CURRENT (A)
VGS = -4.5V
12
8
-2.0V
4
-1.5 V
DRAIN-SOURCE ON-RESISTANCE
20
0
0
1
2
3
4
1.6
-3.0V
1.2
-3.5V
-4.0V
0
5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
R DS(ON) DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
15
20
0.15
ID = - 6 A
VGS = - 4.5V
0.6
-50
I D = -6 A
0.12
0.09
TA =125°C
0.06
25°C
0.03
0
Figure 3. On-Resistance Variation
withTemperature.
1
12
- I S, REVERSE DRAIN CURRENT (A)
15
VDS = -5V
TJ = -55°C
25°C
125°C
9
6
3
1.2
1.5
1.8
2.1
2.4
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
©2011 Fairchild Semiconductor Corporation
FDT434P Rev. C2
2
3
4
- V GS, GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
- I D, DRAIN CURRENT (A)
10
- I D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0
0.9
-4.5V
1
0.8
5
VGS = -2.5V
1.4
TJ = 125°C
1
25°C
-55°C
0.1
0.01
0.001
2.7
VGS = 0V
0
0.2
0.4
0.6
0.8
1
1.2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
www.fairchildsemi.com
FDT434P
Typical Characteristics
1800
I D = -6.0A
-V
f = 1MHz
VGS = 0 V
1600
V DS= -5V
-10V
-15V
1400
CAPACITANCE (pF)
4
3
2
CISS
1200
1000
800
600
COSS
400
1
CRSS
200
GS
, GATE-SOURCE VOLTAGE (V)
5
0
0
0
3
6
9
Q g , GATE CHARGE (nC)
12
15
0
2
4
6
8
10
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
200
SINGLE PULSE
100 µs
10
o
10ms
R DS(ON) LIMIT
1s
T A = 25 oC
100ms
10s
DC
1
V GS= -4.5V
SINGLE PULSE
0.1
RθJA = 110 C/W
160
POWER (W)
-I D, DRAIN CURRENT (A)
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
120
80
40
R θJA= 110 oC/W
T A= 25 oC
0
0.01
0.1
1
10
0.0001
100
0.001
0.01
-V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R θJA (t) = r(t) * R
0.2
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
T J - T A = P * R θJA (t)
Duty Cycle, D = t 1 / t 2
Single Pulse
0.001
0.001
θJA
R θJA = 110 °C/W
0.1
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
©2011 Fairchild Semiconductor Corporation
FDT434P Rev. C2
4
www.fairchildsemi.com
FDT434P
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D = 0.5
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I53
©2011 Fairchild Semiconductor Corporation
FDT434P Rev. C2
5
www.fairchildsemi.com