FDMS8320 L N-Channel PowerTrench MOSFET

FDMS8320L
N-Channel PowerTrench® MOSFET
40 V, 100 A, 1.1 mΩ
Features
General Description
„ Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A
„ Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed ang body
diode reverse recovery performance.
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ Next generation enhanced
engineered for soft recovery
body
diode
technology,
Applications
„ MSL1 robust package design
„ OringFET / Load Switching
„ 100% UIL tested
„ Synchronous Rectification
„ RoHS Compliant
„ DC-DC Conversion
Bottom
Top
Pin 1
S
S
Pin 1
D
D
D
S
G
D
S
D
S
D
S
D
G
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
100
238
(Note 1a)
-Pulsed
36
A
150
Single Pulse Avalanche Energy
EAS
Ratings
40
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
264
104
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.2
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS8320L
Device
FDMS8320L
©2012 Fairchild Semiconductor Corporation
FDMS8320L Rev.C3
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
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FDMS8320L N-Channel PowerTrench® MOSFET
June 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 32 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
100
nA
3.0
V
40
V
21
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-6
VGS = 10 V, ID = 32 A
0.8
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 27 A
1.0
1.5
VGS = 10 V, ID = 32 A, TJ = 125 °C
1.2
1.7
VDS = 5 V, ID = 32 A
206
gFS
Forward Transconductance
1.0
1.7
mV/°C
1.1
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 20 V, VGS = 0 V,
f = 1 MHz
0.1
8350
11110
pF
2840
3780
pF
169
295
pF
1.3
2.6
Ω
17
30
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
VDD = 20 V, ID = 32 A,
VGS = 10 V, RGEN = 6 Ω
19
35
ns
68
110
ns
tf
Fall Time
17
30
ns
Qg
Total Gate Charge
VGS = 0 V to 10 V
121
170
nC
Qg
Total Gate Charge
117
Gate to Source Charge
VGS = 0 V to 4.5 V VDD = 20 V,
ID = 32 A
58
Qgs
19.2
nC
Qgd
Gate to Drain “Miller” Charge
16.5
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
(Note 2)
0.65
1.1
VGS = 0 V, IS = 32 A
(Note 2)
0.74
1.2
68
108
ns
59
95
nC
IF = 32 A, di/dt = 100 A/μs
IF = 32 A, di/dt = 300 A/μs
V
53
85
ns
104
167
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 42 A, VDD = 36 V, VGS = 10 V.
FDMS8320L Rev.C3
2
www.fairchildsemi.com
FDMS8320L N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
120
ID, DRAIN CURRENT (A)
5
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
VGS = 3 V
90
60
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
0.2
0.4
0.6
0.8
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
150
4
VGS = 3 V
3
VGS = 3.5 V
2
1
VGS = 4 V
0
1.0
0
30
Figure 1. On Region Characteristics
90
120
150
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
5
ID = 32 A
VGS = 10 V
1.5
rDS(on), DRAIN TO
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID = 32 A
3
2
TJ = 125 oC
1
TJ = 25 oC
0
-50
-25
0
25
50
75
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
100 125 150
2
TJ, JUNCTION TEMPERATURE (oC)
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
1000
150
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
120
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 4.5 V
VDS = 5 V
90
TJ = 150 oC
60
TJ = 25 oC
30
TJ = -55 oC
0
1.0
1.5
2.0
2.5
3.0
100
10
TJ = 150 oC
1
TJ = 25 oC
0.1
0.01
0.001
0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = -55 oC
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
FDMS8320L Rev.C3
VGS = 0 V
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
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FDMS8320L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
30000
ID = 32 A
10000
8
Ciss
VDD = 20 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
6
VDD = 16 V
VDD = 24 V
4
Coss
1000
100
2
0
0
25
50
75
100
10
0.1
125
1
40
Figure 8. Capacitance vs Drain
to Source Voltage
200
240
100
200
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
Figure 7. Gate Charge Characteristics
TJ = 25 oC
TJ = 100 oC
10
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
TJ = 125 oC
VGS = 10 V
160
VGS = 4.5 V
120
80
Limited by Package
40
o
RθJC = 1.2 C/W
1
0.01
0.1
1
10
100
0
25
1000
50
100
125
150
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
500
P(PK), PEAK TRANSIENT POWER (W)
1000
100
1 ms
10
10 ms
1
75
o
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
Crss
f = 1 MHz
VGS = 0 V
THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
0.01
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 125 oC/W
10 s
TA = 25 oC
DC
0.1
1
10
100200
VDS, DRAIN to SOURCE VOLTAGE (V)
TA = 25 oC
100
10
1
0.5
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
FDMS8320L Rev.C3
SINGLE PULSE
RθJA = 125 oC/W
Figure 12. Single Pulse Maximum
Power Dissipation
4
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FDMS8320L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
FDMS8320L Rev.C3
5
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FDMS8320L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS8320L N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
FDMS8320L Rev.C3
6
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tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FDMS8320L Rev.C3
7
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FDMS8320L N-Channel PowerTrench® MOSFET
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