FG A 5 0

FGA50S110P
1100 V, 50 A Shorted-anode IGBT
Features
General Description
• Intrinsic anti-parallel diode for soft-switching applications
Using advanced field stop trench and shorted-anode technology, Fairchild®’s shorted-anode trench IGBTs offer superior
conduction and switching performances for switching applications. This device is tailored to induction cooker and microwave
oven.
• High switching frequency range 10 kHz to 50kHz
• High temperature stable behavior (Tjmax = 175oC)
• Low saturation voltage drop : VCE(sat) = 2.06 V @ IC = 50 A
• Robust pot detection noise immunity
• RoHS compliant (Pb-free lead plating)
Applications
• Induction cooker, Rice-jar, and Microwave oven
• Soft-switching applications
C
G
TO-3PN
E
G CE
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
VCES
Collector to Emitter Voltage
1100
V
VGES
Gate to Emitter Voltage
± 25
V
IC
ICM (1)
IF
PD
o
Collector Current
@ TC = 25 C
50
A
Collector Current
@ TC = 100oC
30
A
Pulsed Collector Current
A
50
A
@ TC = 25oC
Diode Continuous Forward Current
@ TC = 100oC
30
A
Maximum Power Dissipation
@ TC = 25oC
300
W
Maximum Power Dissipation
@ TC = 100oC
150
Operating Junction Temperature
TJ
120
Diode Continuous Forward Current
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
W
-55 to +175
o
-55 to +175
oC
C
o
300
C
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
Typ.
Max.
-
0.6
o
40
oC/W
-
Unit
C/W
Notes:
1: Limited by Tjmax
©2013 Fairchild Semiconductor Corporation
1
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FGA50S110P Rev. C0
FGA50S110P 1100 V, 50 A Shorted-anode IGBT
March 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA50S110P
FGA50S110P
TO-3PN
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
ICES
Collector Cut-Off Current
VCE = 1100 V, VGE = 0 V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±500
nA
IC = 50 mA, VCE = VGE
4.5
5.6
7.5
V
IC = 50 A, VGE = 15 V
TC = 25oC
-
2.06
2.6
V
IC = 50 A , VGE = 15 V
TC = 125oC
-
2.54
-
V
IC = 50 A, VGE = 15 V,
TC = 175oC
-
2.7
-
V
IF = 50 A, TC = 25oC
-
1.96
2.6
V
IF = 50 A, TC = 175oC
-
2.67
-
V
-
2056
-
pF
-
47.8
-
pF
-
35.8
-
pF
On Characteristics
VGE(th)
VCE(sat)
VFM
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Diode Forward Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
-
24
-
ns
tr
Rise Time
-
294
-
ns
td(off)
Turn-Off Delay Time
-
280
-
ns
tf
Fall Time
-
95
-
ns
Eon
Turn-On Switching Loss
-
2240
-
mJ
Eoff
Turn-Off Switching Loss
-
990
-
mJ
VCC = 600 V, IC = 50 A,
RG = 10 Ω, VGE = 15 V,
Resistive Load, TC = 25oC
Ets
Total Switching Loss
-
3230
-
mJ
td(on)
Turn-On Delay Time
-
24
-
ns
tr
Rise Time
-
346
-
ns
td(off)
Turn-Off Delay Time
-
308
-
ns
tf
Fall Time
-
184
-
ns
Eon
Turn-On Switching Loss
-
2640
-
mJ
Eoff
Turn-Off Switching Loss
-
1820
-
mJ
Ets
Total Switching Loss
-
4460
-
mJ
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2013 Fairchild Semiconductor Corporation
VCC = 600 V, IC = 50 A,
RG = 10 Ω, VGE = 15 V,
Resistive Load,, TC = 175oC
VCE = 600 V, IC = 50 A,
VGE = 15 V
2
-
195
-
nC
-
15.4
-
nC
-
99.9
-
nC
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FGA50S110P Rev. C0
FGA50S110P 1100 V, 50 A Shorted-anode IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
120
Figure 2. Typical Output Characteristics
120
o
o
17V
15V
TC = 25 C
TC = 175 C
17V
15V
20V
12V
10V
80
60
9V
40
8V
80
10V
60
9V
40
8V
20
20
VGE = 7V
VGE = 7V
0
0.0
2.0
4.0
6.0
8.0
Collector-Emitter Voltage, VCE [V]
0
0.0
10.0
Figure 3. Typical Saturation Voltage
Characteristics
Collector Current, IC [A]
Collector Current, IC [A]
TC = 175 C
60
40
0
0.0
60
40
0
0
20
Common Emitter
VGE = 15V
3.5
100A
3.0
2.5
50A
2.0
IC = 25A
1.5
3
6
9
12
Gate-Emitter Voltage,VGE [V]
3
Common Emitter
o
TC = 25 C
15
50A
10
IC = 25A
100A
5
0
50
75
100
125
150
175
o
Collector-EmitterCase Temperature, TC [ C]
©2013 Fairchild Semiconductor Corporation
15
Figure 6. Saturation Voltage vs. VGE
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
o
TC = 175 C
80
1.0
2.0
3.0
4.0
5.0
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
1.0
25
o
TC = 25 C
20
20
4.0
Common Emitter
VCE = 20V
100
o
o
4.5
10.0
120
Common Emitter
VGE = 15V
TC = 25 C
80
2.0
4.0
6.0
8.0
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
120
100
12V
100
Collector Current, IC [A]
Collector Current, IC [A]
100
20V
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGA50S110P Rev. C0
FGA50S110P 1100 V, 50 A Shorted-anode IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
5000
20
Common Emitter
Cies
15
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
TC = 175 C
50A
10
IC = 25A
100A
1000
100
Coes
5
Common Emitter
VGE = 0V, f = 1MHz
Cres
o
TC = 25 C
10
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
1
20
Figure 9. Gate charge Characteristics
5
10
15
20
25
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
15
150
100
Common Emitter
TC = 25 C
10µs
12
VCC = 200V
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
o
600V
400V
9
6
3
10
100µs
10ms
1ms
DC
1
*Notes:
o
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0
0.1
0
30
60
90
120 150
Gate Charge, Qg [nC]
180
210
1
Figure 11. Turn-on Characteristics vs.
Gate Resistance
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
5000
td(on)
Switching Time [ns]
Switching Time [ns]
1000
100
tr
Common Emitter
VCC = 600V, VGE = 15V
IC = 50A
tf
100
Common Emitter
VCC = 600V, VGE = 15V
IC = 50A
o
o
TC = 25 C
10
7
10
10
o
TC = 175 C
20
30
40
50
Gate Resistance, RG [Ω]
©2013 Fairchild Semiconductor Corporation
td(off)
5
10
60
4
TC = 25 C
o
TC = 175 C
20
30
40
50
Gate Resistance, RG [Ω]
60
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FGA50S110P Rev. C0
FGA50S110P 1100 V, 50 A Shorted-anode IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
1000
100
Switching Time [ns]
Switching Time [ns]
td(off)
tr
td(on)
10
Common Emitter
VGE = 15V, RG = 10Ω
tf
100
Common Emitter
VGE = 15V, RG = 10Ω
o
o
TC = 25 C
TC = 25 C
o
o
TC = 175 C
1
10
20
30
TC = 175 C
40
10
10
50
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
50
Figure 16. Switching Loss vs. Collector Current
5000
10000
Eon
Eon
Switching Loss [uJ]
Switching Loss [uJ]
20
30
40
Collector Current, IC [A]
1000
Eoff
1000
Common Emitter
VCC = 600V, VGE = 15V
IC = 50A
Eoff
o
TC = 25 C
o
TC = 25 C
o
TC = 175 C
o
TC = 175 C
100
10
20
Common Emitter
VGE = 15V, RG = 10Ω
30
40
50
Gate Resistance, RG [Ω]
100
10
60
Figure 17. Turn off Switching
SOA Characteristics
20
30
40
Collector Current, IC [A]
50
Figure 18. Forward Characteristics
200
100
Forward Current, IF [A]
Collector Current, IC [A]
100
10
Safe Operating Area
10
1
o
TC = 25 C
o
VGE = 15V, TC = 175 C
o
TC = 175 C
1
1
10
100
Collector-Emitter Voltage, VCE [V]
©2013 Fairchild Semiconductor Corporation
0.1
1000
0
5
1
2
3
Forward Voltage, VF [V]
4
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FGA50S110P Rev. C0
FGA50S110P 1100 V, 50 A Shorted-anode IGBT
Typical Performance Characteristics
FGA50S110P 1100 V, 50 A Shorted-anode IGBT
Typical Performance Characteristics
Figure 19. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
0.6
0.5
0.2
PDM
0.1
0.1
0.05
0.02
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
0.05
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
©2013 Fairchild Semiconductor Corporation
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FGA50S110P Rev. C0
FGA50S110P 1100 V, 50 A Shorted-anode IGBT
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
©2013 Fairchild Semiconductor Corporation
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FGA50S110P Rev. C0
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
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©2013 Fairchild Semiconductor Corporation
FGA50S110P Rev. C0
www.fairchildsemi.com
FGA50S110P 1100 V, 50 A Shorted-anode IGBT
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