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FGH60N60SFD 600 V , 60 A Field S top IGBT
FGH60N60SFD 600 V, 60 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC C E C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) PD Collector Current @ TC = 25oC Collector Current o @ TC = 100 C TL V 120 A A @ TC = 25 C @ TC = 25oC 378 W Maximum Power Dissipation Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 20 A o Storage Temperature Range V 60 Maximum Power Dissipation Tstg Unit 600 180 o Pulsed Collector Current @ TC = 100 C 151 Operating Junction Temperature TJ Ratings W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive test, Pulse width limited by max. juntion temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit RJC(IGBT) Thermal Resistance, Junction to Case - 0.33 o C/W RJC(Diode) Thermal Resistance, Junction to Case - 1.1 o C/W 40 oC/W RJA Thermal Resistance, Junction to Ambient ©2008 Fairchild Semiconductor Corporation - 1 www.fairchildsemi.com www.BDTIC.com/FAIRCHILD FGH60N60SFD Rev. C0 FGH60N60SFD 600 V, 60 A Field Stop IGBT April 2013 Device Marking Device Package Packaging Type FGH60N60SFD FGH60N60SFDTU TO-247 Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A BVCES TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250A - 0.4 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250A, VCE = VGE 4.0 5.0 6.5 V IC = 60A, VGE = 15V - 2.3 2.9 V IC = 60A, VGE = 15V, TC = 125oC - 2.5 - V - 2820 - pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 350 - pF - 140 - pF Switching Characteristics td(on) Turn-On Delay Time - 22 - ns tr Rise Time - 42 - ns td(off) Turn-Off Delay Time - 134 - ns tf Fall Time - 31 62 ns Eon Turn-On Switching Loss - 1.79 - mJ Eoff Turn-Off Switching Loss - 0.67 - mJ VCC = 400V, IC = 60A, RG = 5, VGE = 15V, Inductive Load, TC = 25oC Ets Total Switching Loss - 2.46 - mJ td(on) Turn-On Delay Time - 22 - ns tr Rise Time - 44 - ns td(off) Turn-Off Delay Time - 144 - ns tf Fall Time - 43 - ns Eon Turn-On Switching Loss - 1.88 - mJ Eoff Turn-Off Switching Loss - 1.0 - mJ Ets Total Switching Loss - 2.88 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge ©2008 Fairchild Semiconductor Corporation VCC = 400V, IC = 60A, RG = 5, VGE = 15V, Inductive Load, TC = 125oC VCE = 400V, IC = 60A, VGE = 15V 2 - 198 - nC - 22 - nC - 106 - nC www.fairchildsemi.com www.BDTIC.com/FAIRCHILD FGH60N60SFD Rev. C0 FGH60N60SFD 600 V, 60 A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 30A IES = 30A, dIES/dt = 200A/s Qrr Diode Reverse Recovery Charge ©2008 Fairchild Semiconductor Corporation Min. Typ. Max TC = 25oC - 2.0 2.6 TC = 125oC - 1.8 - TC = 25oC - 47 - - 179 - TC = 25oC - 83 - o - 567 - TC = 125oC TC = 125 C 3 Unit V ns nC www.fairchildsemi.com www.BDTIC.com/FAIRCHILD FGH60N60SFD Rev. C0 FGH60N60SFD 600 V, 60 A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 180 180 o 15V 150 12V 10V 120 90 60 VGE = 8V 15V 12V 10V 120 90 60 VGE = 8V 30 0 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8 0 Figure 3. Typical Saturation Voltage Characteristics 2 4 6 Collector-Emitter Voltage, VCE [V] 8 Figure 4. Transfer Characteristics 180 180 Common Emitter VGE = 15V 150 o TC = 125 C 120 Common Emitter VCE = 20V 150 o TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 20V 150 30 90 60 o TC = 25 C o TC = 125 C 120 30 90 60 30 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 0 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 1 2 3 4 Gate-Emitter Voltage,VGE [V] 5 Figure 6. Saturation Voltage vs. VGE 4.0 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] o TC = 125 C 20V Collector Current, IC [A] TC = 25 C Collector Current, IC [A] Figure 2. Typical Output Characteristics 3.5 120A 3.0 2.5 60A 2.0 IC = 30A 1.5 Common Emitter o TC = -40 C 16 12 8 120A 4 60A IC = 30A 1.0 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] ©2008 Fairchild Semiconductor Corporation 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com www.BDTIC.com/FAIRCHILD FGH60N60SFD Rev. C0 FGH60N60SFD 600 V, 60 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 120A 4 60A IC = 30A 0 0 TC = 125 C 16 12 8 60A 4 IC = 30A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 0 20 Figure 9. Capacitance Characteristics 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 6000 Common Emitter Common Emitter VGE = 0V, f = 1MHz o Gate-Emitter Voltage, VGE [V] 5000 Capacitance [pF] 120A o TC = 25 C Cies 4000 3000 Coes 2000 1000 TC = 25 C 12 300V VCC = 100V 9 200V 6 3 Cres 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 100 150 Gate Charge, Qg [nC] 200 Figure 12. Turn off Switching SOA Characteristics 500 300 10s 100 100 100s 10 Collector Current, IC [A] Collector Current, Ic [A] 50 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 10 Safe Operating Area o 0.01 VGE = 15V, TC = 125 C 1 1 10 100 Collector-Emitter Voltage, VCE [V] ©2008 Fairchild Semiconductor Corporation 1000 1 10 100 1000 Collector-Emitter Voltage, VCE [V] 5 www.fairchildsemi.com www.BDTIC.com/FAIRCHILD FGH60N60SFD Rev. C0 FGH60N60SFD 600 V, 60 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance Figure 14. Turn-off Characteristics vs. Gate Resistance 300 6000 Common Emitter VCC = 400V, VGE = 15V IC = 60A Switching Time [ns] Switching Time [ns] 100 tr Common Emitter VCC = 400V, VGE = 15V IC = 60A td(on) o 1000 TC = 25 C o TC = 125 C td(off) 100 tf o TC = 25 C o TC = 125 C 10 10 0 10 20 30 40 Gate Resistance, RG [] 0 50 20 40 50 Figure 16. Turn-off Characteristics vs. Collector Current 500 1000 Common Emitter VGE = 15V, RG = 5 Common Emitter VGE = 15V, RG = 5 o o TC = 25 C TC = 25 C o Switching Time [ns] o TC = 125 C tr 100 td(on) TC = 125 C td(off) 100 tf 10 0 20 40 60 80 100 10 120 0 20 40 Collector Current, IC [A] 80 100 120 Figure 18. Switching Loss vs Collector Current 30 20 10 Common Emitter VCC = 400V, VGE = 15V Common Emitter VGE = 15V, RG = 5 10 IC = 60A o TC = 25 C o Switching Loss [mJ] TC = 25 C o TC = 125 C Eon Eoff 1 0.5 0 60 Collector Current, IC [A] Figure 17. Switching Loss vs Gate Resistance Switching Loss [mJ] 30 Gate Resistance, RG [] Figure 15. Turn-on Characteristics vs. Collector Current Switching Time [ns] 10 Eon o TC = 125 C Eoff 1 0.1 10 20 30 40 Gate Resistance, RG [] ©2008 Fairchild Semiconductor Corporation 50 0 20 40 60 80 100 120 Collector Current, IC [A] 6 www.fairchildsemi.com www.BDTIC.com/FAIRCHILD FGH60N60SFD Rev. C0 FGH60N60SFD 600 V, 60 A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current 200 500 100 100 o Reverse Current , IR [A] Forward Current, IF [A] TC = 125 C o TJ = 125 C o TJ = 25 C 10 o TJ = 75 C o TC = 25 C 10 o TC = 75 C 1 0.1 o TC = 25 C o TC = 125 C 0.01 1 0 1 2 3 Forward Voltage, VF [V] 0 4 Figure 21. Stored Charge 600 Figure 22. Reverse Recovery Time 60 Reverse Recovery Time, trr [ns] 100 Stored Recovery Charge, Qrr [nC] 200 400 Reverse Voltage, VR [V] 200A/s 80 di/dt = 100A/s 60 200A/s 50 di/dt = 100A/s 40 30 40 5 20 40 5 60 20 40 60 Forward Current, IF [A] Forward Current, IF [A] Figure 23. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.01 0.05 0.02 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] ©2008 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com www.BDTIC.com/FAIRCHILD FGH60N60SFD Rev. C0 FGH60N60SFD 600 V, 60 A Field Stop IGBT Typical Performance Characteristics FGH60N60SFD 600 V, 60 A Field Stop IGBT Mechanical Dimensions TO-247A03 ©2008 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com www.BDTIC.com/FAIRCHILD FGH60N60SFD Rev. C0 tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2008 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com www.BDTIC.com/FAIRCHILD FGH60N60SFD Rev. C0 FGH60N60SFD 600 V, 60 A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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