QED222, QED223 Plastic Infrared Light Emitting Diode QED222,

QED222, QED223
Plastic Infrared Light Emitting Diode
FeaturesPACKAGE DIMENSIONS
Description
■ λ = 880nm
The QED222 and QED223 are 880nm AlGaAs LEDs
encapsulated in a clear purple tinted, plastic T-1 3/4
package.
■ Chip material = AlGaAs
■ Package type: T-1 3/4 (5mm lens diameter)
■ Matched photosensor: QSD123/QSD124
■ Medium wide emission angle, 30°
■ High output power
■ Package material and color: clear, purple tinted, plastic
Package Dimensions
0.195 (4.95)
REFERENCE
SURFACE
0.305 (7.75)
0.040 (1.02)
NOM
0.800 (20.3)
MIN
CATHODE
0.050
(1.25)
Schematic
0.100 (2.54)
NOM
ANODE
0.240 (6.10)
0.215 (5.45)
CATHODE
0.020 (0.51)
SQ. (2X)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
unless otherwise specified.
©2001 Fairchild Semiconductor Corporation
QED222, QED223 Rev. 1.0.2
www.fairchildsemi.com
QED222, QED223 — Plastic Infrared Light Emitting Diode
July 2012
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Rating
Units
TOPR
Operating Temperature
-40 to +100
°C
TSTG
Storage Temperature
-40 to +100
°C
TSOL-I
Soldering Temperature (Iron)(2)(3)(4)
240 for 5 sec
°C
260 for 10 sec
°C
100
mA
TSOL-F
IF
Soldering Temperature
(Flow)(2)(3)
Continuous Forward Current
VR
Reverse Voltage
5
V
PD
Power Dissipation(1)
200
mW
Peak Forward Current(5)
1.5
A
IF(Peak)
Notes:
1. Derate power dissipation linearly 2.67mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
5. Pulse conditions; tp = 100µs, T = 10ms.
Electrical / Optical Characteristics (TA = 25°C)
Symbol
Parameter
λPE
Peak Emission Wavelength
TCλ
Temperature Coefficient
Test Conditions
IF = 20mA
2Θ1/2
Emission Angle
IF = 100mA
VF
Forward Voltage
IF = 100mA, tp = 20ms
TCVF
VR = 5V
IE
Radiant Intensity QED222
IF = 100mA, tp = 20ms
Radiant Intensity QED223
tf
Fall Time
Cj
Junction Capacitance
©2001 Fairchild Semiconductor Corporation
QED222, QED223 Rev. 1.0.2
Units
890
nm
0.2
nm / °C
30
°
16
V
mV / °C
10
µA
32
mW/sr
25
Temperature Coefficient
Rise Time
Max.
-6
Reverse Current
tr
Typ.
1.7
Temperature Coefficient
IR
TCIE
Min.
IF = 100mA
VR = 0V
-0.3
% / °C
900
ns
800
ns
11
pF
www.fairchildsemi.com
2
QED222, QED223 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Figure 1. Normalized Intensity vs. Wavelength
Figure 2. Peak Wavelength vs. Ambient Temperature
1.0
λPE – PEAK EMISSION WAVELENGTH
910
NORMALIZED INTENSITY
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
700
750
800
850
900
950
1,000
IF = 20mA DC
908
906
904
902
900
898
896
894
1,050
0
10
20
λ (nm)
Ie – NORMALIZED RADIANT INTENSITY
Ie – NORMALIZED RADIANT INTENSITY
1
0.1
10
60
100
80
70
90
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-15
1000
Normalized to:
IF = 20mA Pulsed
tPW = 20ms
Duty Cycle = 4%
TA = 25°C
0
15
30
45
60
75
90
105
TA – AMBIENT TEMPERTURE (°C)
IF – FORWARD CURRENT (mA)
Figure 6. Forward Voltage vs. Ambient Temperature
Figure 5. Forward Voltage vs. Forward Current
5.0
2.1
IF Pulsed
tPW = 20ms
Duty Cycle = 4%
TA = 25°C
VF – FORWARD VOLTAGE (V)
VF – FORWARD VOLTAGE (V)
50
1.3
Normalized to:
IF = 100mA Pulsed
tPW = 20ms
Duty Cycle = 4%
TA = 25°C
3.0
2.0
1.0
0.0
10
40
Figure 4. Normalized Radient Intensity vs. Ambient Temperature
Figure 3. Normalized Radiant Intensity vs. Forward Current
10
4.0
30
TA – AMBIENT TEMPERTURE (°C)
100
1.8
1.7
1.6
0
15
30
45
60
75
90
105
TA – AMBIENT TEMPERTURE (°C)
IF – FORWARD CURRENT (mA)
©2001 Fairchild Semiconductor Corporation
QED222, QED223 Rev. 1.0.2
1.9
1.5
-15
1000
IF = 20mA Pulsed
tPW = 20ms
Duty Cycle = 4%
2.0
www.fairchildsemi.com
3
QED222, QED223 — Plastic Infrared Light Emitting Diode
Typical Performance Curves
Figure 8. Coupling Characteristics of QED22X and QSD22X
110°
100°
90°
80°
70°
120°
60°
130°
50°
140°
40°
150°
30°
160°
20°
170°
180°
1.0
IC (ON) – NORMALIZED COLLECTOR CURRENT
Figure 7. Radiation Diagram
10°
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
0°
1.0
1.0
Normalized to:
d = 0 inch
Pulse Width = 100μs
Duty Cycle = 0.1%
VCC = 5V
RL = 100Ω
TA = 25°C
0.8
0.6
IF = 100mA
0.4
IF = 20mA
0.2
0.0
0
1
2
3
4
5
6
LENS TIP SEPARATION (inches)
©2001 Fairchild Semiconductor Corporation
QED222, QED223 Rev. 1.0.2
www.fairchildsemi.com
4
QED222, QED223 — Plastic Infrared Light Emitting Diode
Typical Performance Curves (Continued)
QED222, QED223 — Plastic Infrared Light Emitting Diode
©2001 Fairchild Semiconductor Corporation
QED222, QED223 Rev. 1.0.2
www.fairchildsemi.com
5