DUAL HIGH-SPEED AUDIO OPERATIONAL AMPLIFIER LM833 FEATURES APPLICATIONS

LM833
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SLOS481A – JULY 2010 – REVISED AUGUST 2010
DUAL HIGH-SPEED AUDIO OPERATIONAL AMPLIFIER
Check for Samples: LM833
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
•
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1
Dual-Supply Operation: ±5 V to ±18 V
Low Noise Voltage: 4.5 nV/√Hz
Low Input Offset Voltage: 0.15 mV
Low Total Harmonic Distortion: 0.002%
High Slew Rate: 7 V/ms
High-Gain Bandwidth Product: 16 MHz
High Open-Loop AC Gain: 800 at 20 kHz
Large Output-Voltage Swing: 14.1 V to –14.6 V
Excellent Gain and Phase Margins
Available in 8-Pin MSOP Package (3mm x
4.9mm x 0.65mm)
HiFi Audio System Equipment
Preamplification and Filtering
Set Top Box
Microphone PreAmplifier Circuit
General-Purpose Amplifier Applications
D (SOIC), DGK (MSOP), OR P (PDIP) PACKAGE
(TOP VIEW)
OUT1
1
8
VCC+
IN1–
2
7
OUT2
IN1+
3
6
IN2–
VCC–
4
5
IN2+
DESCRIPTION
The LM833 is a dual operational amplifier with high-performance specifications for use in quality audio and
data-signal applications. This device operates over a wide range of single- and dual-supply voltage with low
noise, high-gain bandwidth, and high slew rate. Additional features include low total harmonic distortion, excellent
phase and gain margins, large output voltage swing with no deadband crossover distortions, and symmetrical
sink/source performance.
The dual amplifiers are utilized widely in circuit of audio optimized for all preamp and high level stages in PCM
and HiFi systems. LM833 is pin-for-pin compatible with industry-standard dual operation amplifiers' pin
assignments. With addition of a preamplifier, the gain of the power stage can be greatly reduced to improve
performance.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated
LM833
SLOS481A – JULY 2010 – REVISED AUGUST 2010
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ORDERING INFORMATION (1)
TA
PACKAGE
PDIP – P
–40°C to 85°C
SOIC – D
VSSOP/MSOP – DGK
(1)
(2)
(3)
(2)
ORDERABLE PART NUMBER
Tube of 50
LM833P
Tube of 75
LM833D
Reel of 2500
LM833DR
Reel of 2500
LM833DGKR
Reel of 250
LM833DGKT
TOP-SIDE MARKING (3)
LM833P
LM833
RS_
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
DGK: The actual top-side marking has one additional character that designates the wafer fab/assembly site.
Symbol (Each Amplifier)
IN+
+
IN −
−
OUT
Typical Design Example Audio Pre-Amplifier
2
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ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VCC+
Supply voltage (2)
18
V
VCC–
Supply voltage
(2)
–18
V
VCC+ – VCC–
Supply voltage
36
V
Input voltage, either input (2)
(3)
VCC+ or VCC–
Input current (4)
±10
Duration of output short circuit (5)
Unlimited
D package
qJA
Package thermal impedance, junction to free air (6)
TJ
Operating virtual junction temperature
Tstg
Storage temperature range
(7)
97
DGK package
172
P package
(1)
(2)
(3)
(4)
(5)
(6)
(7)
V
mA
°C/W
85
–65
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC–.
The magnitude of the input voltage must never exceed the magnitude of the supply voltage.
Excessive input current will flow if a differential input voltage in excess of approximately 0.6 V is applied between the inputs, unless
some limiting resistance is used.
The output may be shorted to ground or either power supply. Temperature and/or supply voltages must be limited to ensure the
maximum dissipation rating is not exceeded.
Maximum power dissipation is a function of TJ(max), qJA, and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = (TJ(max) – TA)/qJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
The package thermal impedance is calculated in accordance with JESD 51-7.
ELECTROSTATIC DISCHARGE RATINGS
MIN
ESD
MAX
Human-Body Model (HBM)
2.5
Charged-Device Model (CDM)
1.5
UNIT
kV
RECOMMENDED OPERATING CONDITIONS
VCC–
VCC+
TA
Supply voltage
Operating free-air temperature range
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MIN
MAX
–5
–18
5
18
–40
85
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UNIT
V
°C
3
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ELECTRICAL CHARACTERISTICS
VCC– = –15 V, VCC+ = 15 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VIO
Input offset voltage
VO = 0, RS = 10 Ω, VCM = 0
aVIO
Input offset voltage
temperature coefficient
VO = 0, RS = 10 Ω, VCM = 0
IIB
Input bias current
VO = 0, VCM = 0
IIO
Input offset current
VO = 0, VCM = 0
VICR
Common-mode input voltage
range
ΔVIO = 5 mV, VO = 0
AVD
Large-signal differential
voltage amplification
RL ≥ 2 kΩ, VO = ±10 V
Maximum output voltage swing VID = ±1 V
CMMR
(1)
2
3
TA = –40°C to 85°C
2
300
25
TA = –40°C to 85°C
RL = 2k Ω
750
150
175
±13
±14
TA = 25°C
90
110
TA = –40°C to 85°C
85
VOM+
10.7
VOM–
–11.9
VOM+
13.2
13.8
VOM–
–13.2
–13.7
VOM+
13.5
14.1
VOM–
–14
–14.6
UNIT
mV
mV/°C
800
TA = 25°C
nA
nA
V
dB
V
Common-mode rejection ratio
VIN = ±13 V
80
100
dB
Supply-voltage rejection ratio
VCC+ = 5 V to 15 V, VCC– = –5 V to –15 V
80
105
dB
15
29
–20
–37
IOS
Output short-circuit current
|VID| = 1 V, Output to GND
ICC
Supply current (per channel)
VO = 0
(1)
MAX
0.15
TA = –40°C to 85°C
RL = 10k Ω
kSVR
TYP
TA = –40°C to 85°C
TA = 25°C
RL = 600 Ω
VOM
MIN
TA = 25°C
Source current
Sink current
TA = 25°C
2.05
TA = –40°C to 85°C
mA
2.5
2.75
mA
Measured with VCC± differentially varied at the same time
OPERATING CHARACTERISTICS
VCC– = –15 V, VCC+ = 15 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SR
Slew rate at unity gain
AVD = 1, VIN = –10 V to 10 V, RL = 2 kΩ, CL = 100 pF
GBW
Gain bandwidth product
f = 100 kHz
B1
Unity gain frequency
Open loop
Gm
Gain margin
RL = 2 kΩ
Φm
Phase margin
RL = 2 kΩ
MIN
TYP
5
7
V/ms
10
16
MHz
9
MHz
CL = 0 pF
–11
CL = 100 pF
–6
CL = 0 pF
55
CL = 100 pF
40
Amp-to-amp isolation
f = 20 Hz to 20 kHz
Power bandwidth
VO = 27 V(PP), RL = 2 kΩ, THD ≤ 1%
THD
Total harmonic distortion
VO = 3 Vrms, AVD = 1, RL = 2 kΩ, f = 20 Hz to 20 kHz
zo
Open-loop output impedance
VO = 0, f = 9 MHz
rid
Differential input resistance
Cid
Differential input capacitance
MAX
UNIT
dB
deg
–120
dB
120
kHz
0.002
%
37
Ω
VCM = 0
175
kΩ
VCM = 0
12
pF
Vn
Equivalent input noise voltage
f = 1 kHz, RS = 100 Ω
4.5
nV/√Hz
In
Equivalent input noise current
f = 1 kHz
0.5
pA/√Hz
4
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0.1 µF
10 Ω
100 kΩ
2.0 kΩ
4.3 kΩ
+
D.U.T.
22 µF
1/2
LM833
Scope
x1
RIN = 1.0 MΩ
−
4.7 µF
100 kΩ
Voltage Gain = 50,000
2.2 µF
24.3 kΩ
110 kΩ
0.1 µF
NOTE: All capacitors are non-polarized.
Figure 1. Voltage Noise Test Circuit (0.1 Hz to 10 Hz)
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TYPICAL CHARACTERISTICS
INPUT BIAS CURRENT
vs
COMMON-MODE VOLTAGE
INPUT BIAS CURRENT
vs
SUPPLY VOLTAGE
600
600
VCM = 0 V
VCC– = –15 V
TA = 25°C
500
TA = 25°C
IIB – Input Bias Current – nA
IIB – Input Bias Current – nA
500
VCC+ = 15 V
400
300
200
100
400
300
200
100
0
0
-15
5
-10
-5
0
5
10
15
6
7
8
9 10 11 12 13 14 15 16 17 18
VCC+/–VCC– – Supply Voltage – V
VCM – Common Mode Voltage – V
INPUT BIAS CURRENT
vs
TEMPERATURE
INPUT OFFSET VOLTAGE
vs
TEMPERATURE
1000
2
900
VCC– = –15 V
800
VCM = 0 V
VCC+ = 15 V
1.5
VIO – Input Offset Voltage – mV
IIB – Input Bias Current – nA
VCC+ = 15 V
700
600
500
400
300
200
VCM = 0 V
1
0.5
0
-0.5
-1
-1.5
100
0
-55 -35 -15
5
25
45
65
85
105 125
-2
-55 -35 -15
TA – Temperature – °C
6
VCC– = –15 V
5
25
45
65
85
105 125
TA – Temperature – °C
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TYPICAL CHARACTERISTICS (continued)
INPUT COMMON-MODE VOLTAGE
LOW PROXIMITY TO VCC–
vs
TEMPERATURE
INPUT COMMON-MODE VOLTAGE
HIGH PROXIMITY TO VCC+
vs
TEMPERATURE
1.4
0
1.2
Input Common-Mode Voltage High
Proximity to V CC+ – V
Input Common-Mode Voltage Low
Proximity to V CC– – V
VCC+ = 3 V to 15 V
1
0.8
0.6
VCC+ = 3 V to 15 V
0.4
VCC– = -3 V to -15 V
D
è VIO = 5 mV
0.2
VO = 0 V
0
-55
-25
5
35
65
95
-0.2
VCC– = -3 V to -15 V
D VIO = 5 mV
-0.4
VO = 0 V
-0.6
-0.8
-1
-1.2
-1.4
-55
125
-25
TA – Temperature – °C
35
65
95
125
TA – Temperature – °C
OUTPUT SATURATION VOLTAGE PROXIMITY TO VCC+
vs
LOAD RESISTANCE
OUTPUT SATURATION VOLTAGE PROXIMITY TO VCC–
vs
LOAD RESISTANCE
10
0
9
-1
TA = 125°C
-2
8
TA = 25°C
-3
Output Saturation Voltage
Proximity to V CC– – V
Output Saturation Voltage
Proximity to V CC+ – V
5
TA = –55°C
-4
-5
-6
-7
-8
-9
7
6
5
TA = 125°C
4
TA = 25°C
3
TA = –55°C
2
1
-10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
kW
RL – Load Resistance – kh
0.5
1
1.5
2
2.5
3
3.5
4
4.5
kW
RL – Load Resistance – k@
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TYPICAL CHARACTERISTICS (continued)
OUTPUT SHORT-CIRCUIT CURRENT
vs
TEMPERATURE
SUPPLY CURRENT
vs
TEMPERATURE
70
10
60
VCC– = –15 V
9
VID = 1 V
8
50
40
Source
Sink
30
20
ICC – Supply Current – mA
IOS – Output Short-Circuit Current – mA
VCC+ = 15 V
VCM = 0 V
RL = High Impedance
VO = 0 V
7
6
4
3
VCC± = ±10 V
VCC± = ±5 V
2
1
10
-55
-35
-15
5
25
45
65
85
0
-55
105 125
TA – Temperature – °C
100
80
70
-15
5
25
45
65
85
105 125
PSSR
vs
FREQUENCY
120
VCC+ = 15 V
VCC– = –15 V
VCM = 0 V
DVCM = ±1.5 V
TA = 25°C
90
-35
TA – Temperature – °C
CMRR
vs
FREQUENCY
VCC+ = 15 V
VCC– = –15 V
TA = 25°C
110
100
90
80
60
PSRR – dB
CMMR – dB
VCC± = ±15 V
5
50
40
70
T3P
60
50
T3N
40
30
30
20
8
20
10
10
0
100
10k
100k 1.0E+06
10M
1k
1M
1.0E+02
1.0E+03
1.0E+04
1.0E+05
1.0E+07
0
1.0E+02
1.0E+03
1.0E+04
1.0E+05
1.0E+07
100
10k
100k 1.0E+06
10M
1k
1M
f – Frequency – Hz
f – Frequency – Hz
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TYPICAL CHARACTERISTICS (continued)
GAIN BANDWIDTH PRODUCT
vs
SUPPLY VOLTAGE
GAIN BANDWIDTH PRODUCT
vs
TEMPERATURE
30
GBW – Gain Bandwidth Product – MHz
GBW – Gaind Bandwidth Product – MHz
30
25
20
15
10
5
6
7
8
20
15
10
5
0
-55
0
5
25
9 10 11 12 13 14 15 16 17 18
-35
-15
5
25
45
65
OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
30
VCC+ = 15 V
VCC– = –15 V
RL = 2 kW
AV = 1
THD < 1%
TA = 25°C
15
25
10
VO – Output Voltage – V
VO – Output Voltage – V
RL = 10 kW
RL = 2 kW
5
0
-5
RL = 10 kW
-10
RL = 2 kW
-20
8
20
15
10
5
-15
7
125
OUTPUT VOLTAGE
vs
FREQUENCY
20
6
105
TA – Temperature – °C
VCC+/–VCC– – Supply Voltage – V
5
85
9 10 11 12 13 14 15 16 17 18
0
100
10
10k
100k 1.E+06
10M
1k
1M
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+07
VCC+/–VCC– – Supply Voltage – V
f – Frequency – Hz
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TYPICAL CHARACTERISTICS (continued)
OPEN-LOOP GAIN
vs
SUPPLY VOLTAGE
OPEN-LOOP GAIN
vs
TEMPERATURE
120
110
RL = 2 kW
f < 10 Hz
DVO = 2/3(VCC+ – VCC–)
TA = 25°C
115
AV – Open-Loop Gain – dB
AV – Open-Loop Gain – dB
105
100
95
90
RL = 2 kW
f < 10 Hz
DVO = 2/3(VCC+ – VCC–)
TA = 25°C
85
6
7
8
105
100
95
90
85
80
5
110
80
-55
9 10 11 12 13 14 15 16 17 18
VCC+/–VCC– – Supply Voltage – V
200
40
35
190
180
TA = 25°C
Crosstalk Rejection – dB
ZO – Output Impedance – W
VCC+ = 15 V
VCC– = –15 V
30
25
20
15
AV = 1000
10
45
65
85
105 125
170
Drive Channel
VCC+ = 15 V
VCC– = –15 V
RL = 2 kW
VO = 20 VPP
TA = 25°C
160
150
140
130
120
AV = 100
AV = 10
AV = 1
110
5
0
1.0E+03
1k
25
CROSSTALK REJECTION
vs
FREQUENCY
50
VO = 1 Vrms
5
TA – Temperature – °C
OUTPUT IMPEDANCE
vs
FREQUENCY
45
-35 -15
100
1.E+01
10
1.0E+04
10k
1.0E+05
100k
1.0E+06
1M
1.0E+07
10M
1.E+02
100
1.E+03
1k
1.E+04
10k
1.E+05
100k
f – Frequency – Hz
f – Frequency – Hz
10
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TYPICAL CHARACTERISTICS (continued)
TOTAL HARMONIC DISTORTION
vs
FREQUENCY
TOTAL HARMONIC DISTORTION
vs
OUTPUT VOLTAGE
0.1
1
VCC+ = 15 V
VCC– = –15 V
VO = 1 Vrms
AV = 1
RL = 2 kW
TA = 25°C
THD – Total Harmonic Distortion – %
THD – Total Harmonic Distortion – %
1
0.01
0.001
0.0001
10
1.E+01
AV = 1000
0.1
AV = 100
0.01
AV = 10
0.001
VCC+ = 15 V
VCC– = –15 V
f = 2 kHz
RL = 2 kW
TA = 25°C
AV = 1
0.0001
100
1.E+02
1k
1.E+03
10k
1.E+04
100k
1.E+05
0
1
2
f – Frequency – Hz
5
6
7
8
9
105
125
SLEW RATE
vs
TEMPERATURE
10
10
9
9
Falling Edge
8
7
Rising Edge
6
5
4 DV = 2/3(V – V )
IN
CC+
CC–
AV = 1
3 RL = 2 kW
TA = 25°C
2
5 6 7 8 9 10 11 12 13 14 15 16 17 18
SR – Slew Rate – V/µs
SR – Slew Rate – V/µs
4
VO – Output Voltage – Vrms
SLEW RATE
vs
SUPPLY VOLTAGE
8
3
Falling Edge
7
Rising Edge
6
5
4
3
2
-55
VCC+/–VCC– – Supply Voltage – V
VCC+ = 15 V
VCC– = –15 V
DVIN = 20 V
AV = 1
RL = 2 kW
-35
-15
5
25
45
65
85
TA – Temperature – °C
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TYPICAL CHARACTERISTICS (continued)
GAIN AND PHASE
vs
FREQUENCY
12
70
Gain, TA = 25°C
-90
40
30
20
10
20
Gain, TA = –55°C
40
Phase, TA = 125°C
50
70
Phase, TA = –55°C
1.E+04
10k
1.E+05
100k
1.E+06
1M
80
1000
0
-180
1.E+07
10M
1
10
100
Cout – Output Load Capacitance – pF
OVERSHOOT
vs
OUTPUT LOAD CAPACITANCE
INPUT VOLTAGE AND CURRENT NOISE
vs
FREQUENCY
100
100
80
10
VCC+ = 15 V
VCC+ = 15 V
VCC– = –15 V
VCC– = –15 V
VIN = 100 mVPP
TA = 25°C
nV/ÖHz
Input Voltage Noise – nV/rtHz
90
70
Overshoot – %
60
Phase, TA = 25°C
f – Frequency – Hz
60
50
40
TA = 125°C
30
20
30
6
3
-135
VCC+ = 15 V
VCC– = –15 V
RL = 2 kW
TA = 25°C
0
1.E+03
1k
Gain Margin – dB
Gain – dB
Phase Shift – deg
Gain
50
10
9
-45
60
0
VCC+ = 15 V
VCC– = –15 V
VO = 0 V
Gain, TA = 125°C
Phase Margin – deg
0
Phase
TA = 25°C
10
1
Input Voltage Noise
Input Current Noise
pA/ÖHz
Input Current Noise – pA/rtHz
80
GAIN AND PHASE MARGIN
vs
OUTPUT LOAD CAPACITANCE
10
TA = –55°C
0
1
10
100
1000
10
Cout – Output Load Capacitance – pF
12
100
1k
1000
0.1
100k
100000
f – Frequency – Hz
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10000
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TYPICAL CHARACTERISTICS (continued)
INPUT REFERRED NOISE VOLTAGE
vs
SOURCE RESISTANCE
GAIN AND PHASE MARGIN
vs
DIFFERENTIAL SOURCE RESISTANCE
1000
16
64
60
VCC– = –15 V
f = 1 Hz
TA = 25°C
14
56
52
12
100
10
44
10
40
Gain Margin
36
8
32
28
6
4
2
VCC+ = 15 V
24
VCC– = –15 V
20
AV = 100
16
VO = 0 V
12
TA = 25°C
8
Phase Margin – deg
48
Phase Margin
Gain Margin – dB
nV/ÖHz
Input Referred Noise Voltage – nV/rtHz
VCC+ = 15 V
4
0
1.E+02
100
1.E+03
1k
1.E+04
10k
1.E+05
100k
1.E+06
1M
1
00
RS – Source Resistance – W
è
55
45
0
45
-10
35
VCC+ = 15 V
VCC– = –15 V
AV = 1
RL = 2 kW
CL = 100 pF
TA = 25°C
-20
-30
5
-40
-5
-15
-2
2
6
10
14
18
22
VO – Output Voltage – V
10
VI – Input Voltage – V
VO – Output Voltage – V
Input
Output
101k
00
0
1010k
0 0 0 10100k
0000
LARGE SIGNAL TRANSIENT RESPONSE
(AV = –1)
55
15
100
10
0
RSD – Differential Source Resistance – W
è
LARGE SIGNAL TRANSIENT RESPONSE
(AV = 1)
25
10
10
Input
10
0
35
25
15
-10
VCC+ = 15 V
VCC– = –15 V
AV = –1
RL = 2 kW
CL = 100 pF
TA = 25°C
Output
-20
-30
5
-40
-50
-5
-50
-60
-15
VI – Input Voltage – V
1
1.E+01
10
-60
-2
Time – µs
2
6
10
14
18
22
Time – µs
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13
LM833
SLOS481A – JULY 2010 – REVISED AUGUST 2010
www.ti.com
TYPICAL CHARACTERISTICS (continued)
LOW_FREQUENCY NOISE
0.6
0.2
400
0.5
0.1
300
0.4
0.0
-0.1
VCC+ = 15 V
VCC– = –15 V
AV = 1
RL = 2 kW
CL = 100 pF
TA = 25°C
0.2
0.1
-0.2
-0.3
-0.4
0
Input Voltage Noise – nV
Input
0.3
200
VI – Input Voltage – V
VO – Output Voltage – V
SMALL SIGNAL TRANSIENT RESPONSE
100
0
-100
-200
T3
VCC+ = 15 V
-300
VCC– = –15 V
BW = 0.1 Hz to 10 Hz
TA = 25°C
Output
-0.1
-0.2
-0.5
0.0
0.5
1.0
1.5
-0.5
-400
-0.6
-500
-5
-3
-2
-1
0
1
2
3
4
5
Time – s
Time – µs
14
-4
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Product Folder Link(s): LM833
LM833
www.ti.com
SLOS481A – JULY 2010 – REVISED AUGUST 2010
APPLICATION INFORMATION
Output Characteristics
All operating characteristics are specified with 100-pF load capacitance. The LM833 can drive higher capacitance
loads. However, as the load capacitance increases, the resulting response pole occurs at lower frequencies,
causing ringing, peaking, or oscillation. The value of the load capacitance at which oscillation occurs varies from
lot to lot. If an application appears to be sensitive to oscillation due to load capacitance, adding a small
resistance in series with the load should alleviate the problem (see Figure 2).
PULSE RESPONSE
(RL = 600 Ω, CL = 380 pF)
PULSE RESPONSE
(RL = 2 kΩ, CL = 560 pF)
Maximum capacitance
before oscillation = 380 pF
PULSE RESPONSE
(RL = 10 kΩ, CL = 590 pF)
Maximum capacitance
before oscillation = 590 pF
0.25 V per Division
0.25 V per Division
0.25 V per Division
Maximum capacitance
before oscillation = 560 pF
250 ns per Division
250 ns per Division
250 ns per Division
0.25 V per Division
PULSE RESPONSE
(RO = 35 Ω, CO = 1000 pF, RL = 2 kΩ)
0.25 V per Division
PULSE RESPONSE
(RO = 4 Ω, CO = 1000 pF, RL = 2 kΩ)
0.25 V per Division
PULSE RESPONSE
(RO = 0 Ω, CO = 1000 pF, RL = 2 kΩ)
250 ns per Division
250 ns per Division
250 ns per Division
15 V
RO
VO
5V
–5 V
–15 V
CL
RL = 2 kΩ
Figure 2. Output Characteristics
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15
LM833
SLOS481A – JULY 2010 – REVISED AUGUST 2010
www.ti.com
REVISION HISTORY
Changes from Original (July 2010) to Revision A
•
16
Page
Changed Datasheet status from Product Preview to Production Data. ................................................................................ 1
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Product Folder Link(s): LM833
PACKAGE OPTION ADDENDUM
www.ti.com
18-Oct-2010
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
(3)
Samples
(Requires Login)
LM833D
ACTIVE
SOIC
D
8
40
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
Purchase Samples
LM833DGKR
ACTIVE
MSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
Request Free Samples
LM833DGKT
ACTIVE
MSOP
DGK
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
Purchase Samples
LM833DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
Request Free Samples
LM833P
ACTIVE
PDIP
P
8
50
Pb-Free (RoHS)
CU NIPDAU N / A for Pkg Type
Request Free Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
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Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Jul-2011
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
LM833DGKR
MSOP
DGK
8
LM833DGKT
MSOP
DGK
LM833DR
SOIC
D
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
2500
330.0
12.4
5.3
3.3
1.3
8.0
12.0
Q1
8
250
180.0
12.4
5.3
3.3
1.3
8.0
12.0
Q1
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
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Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Jul-2011
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM833DGKR
MSOP
DGK
8
2500
346.0
346.0
35.0
LM833DGKT
MSOP
DGK
8
250
203.0
203.0
35.0
LM833DR
SOIC
D
8
2500
346.0
346.0
29.0
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Pack Materials-Page 2
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