OPA27 OPA37 Ultra-Low Noise, Precision OPERATIONAL AMPLIFIERS

OPA
27
OPA
27
OPA27
OPA37
SBOS135C – JANUARY 1984 – REVISED AUGUST 2005
Ultra-Low Noise, Precision
OPERATIONAL AMPLIFIERS
DESCRIPTION
FEATURES
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LOW NOISE: 4.5nV/√Hz max at 1kHz
LOW OFFSET: 100µV max
LOW DRIFT: 0.4µV/°C
HIGH OPEN-LOOP GAIN: 117dB min
HIGH COMMON-MODE REJECTION: 100dB min
HIGH POWER-SUPPLY REJECTION: 94dB min
FITS OP-07, OP-05, AD510, AND AD517
SOCKETS
APPLICATIONS
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PRECISION INSTRUMENTATION
DATA ACQUISITION
TEST EQUIPMENT
PROFESSIONAL AUDIO EQUIPMENT
TRANSDUCER AMPLIFIERS
RADIATION HARD EQUIPMENT
The OPA27 and OPA37 are ultra-low noise, high-precision
monolithic operational amplifiers.
Laser-trimmed thin-film resistors provide excellent long-term
voltage offset stability and allow superior voltage offset
compared to common zener-zap techniques.
A unique bias current cancellation circuit allows bias and
offset current specifications to be met over the full –40°C to
+85°C temperature range.
The OPA27 is internally compensated for unity-gain stability.
The decompensated OPA37 requires a closed-loop gain ≥ 5.
The Texas Instruments’ OPA27 and OPA37 are improved
replacements for the industry-standard OP-27 and OP-37.
7
+VCC
8
Trim
1
Trim
6
Output
2
–In
3
+In
4
–VCC
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
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Copyright © 1984-2005, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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ABSOLUTE MAXIMUM RATINGS(1)
Supply Voltage ................................................................................... ±22V
Internal Power Dissipation (2) ....................................................... 500mW
Input Voltage ..................................................................................... ±VCC
Output Short-Circuit Duration (3) ................................................. Indefinite
Differential Input Voltage (4) ............................................................. ±0.7V
Differential Input Current (4) ........................................................... ±25mA
Storage Temperature Range .......................................... –55°C to +125°C
Operating Temperature Range ......................................... –40°C to +85°C
Lead Temperature:
P (soldering, 10s) ....................................................................... +300°C
U (soldering, 3s) ......................................................................... +260°C
NOTES: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. (2) Maximum package power dissipation versus ambient
temperature. (2) To common with ±VCC = 15V. (4) The inputs are protected by
back-to-back diodes. Current limiting resistors are not used in order to achieve
low noise. If differential input voltage exceeds ±0.7V, the input current should
be limited to 25mA.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
PIN CONFIGURATION
Top View
PACKAGE/ORDERING
INFORMATION(1)
PRODUCT
PACKAGE-LEAD
θJA
PACKAGE
DRAWING
PACKAGE
MARKING
OPA27
OPA27
DIP-8
SO-8
100°C/W
160°C/W
P
D
OPA27GP
OPA27U
OPA37
OPA37
DIP-8
SO-8
100°C/W
160°C/W
P
D
OPA37GP
OPA37U
NOTE: (1) For the most current package and ordering information, see the
Package Option Addendum located at the end of this document, or see the TI
website at www.ti.com.
2
Offset Trim
1
8
Offset Trim
–In
2
7
+VCC
+In
3
6
Output
–VCC
4
5
NC
NC = No Connection
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SBOS135C
ELECTRICAL CHARACTERISTICS
At VCC = ±15V and TA = +25°C, unless otherwise noted.
OPA27
OPA37
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
3.8
3.3
3.2
0.09
1.7
1.0
0.4
8.0
5.6
4.5
0.25
0.6
nV/√Hz
nV/√Hz
nV/√Hz
µVPP
pA/√Hz
pA/√Hz
pA/√Hz
±25
±0.4
0.4
±100
±1.8 (6)
2.0
µV
µV/°C
µV/mo
120
±1
±20
dB
µV/V
BIAS CURRENT
Input Bias Current
±15
±80
nA
OFFSET CURRENT
Input Offset Current
10
75
nA
INPUT NOISE (6)
Voltage, fO = 10Hz
fO = 30Hz
fO = 1kHz
fB = 0.1Hz to 10Hz
Current,(1) fO = 10Hz
fO = 30Hz
fO = 1kHz
OFFSET VOLTAGE (2)
Input Offset Voltage
Average Drift (3)
Long Term Stability (4)
TA MIN to TA MAX
±VCC = 4 to 18V
±VCC = 4 to 18V
Supply Rejection
94
IMPEDANCE
Common-Mode
VOLTAGE RANGE
Common-Mode Input Range
Common-Mode Rejection
OPEN-LOOP VOLTAGE GAIN, DC
FREQUENCY RESPONSE
Gain-Bandwidth Product (5)
Slew Rate (5)
Settling Time, 0.01%
RATED OUTPUT
Voltage Output
2 || 2.5
GΩ || pF
±11
100
±12.3
122
V
dB
RL ≥ 2kΩ
RL ≥ 1kΩ
117
124
124
dB
dB
OPA27
OPA37
VO = ±10V,
RL = 2kΩ
OPA27, G = +1
OPA37, G = +5
OPA27, G = +1
OPA37, G = +5
5 (6)
45 (6)
8
63
MHz
MHz
1.7 (6)
11(6)
1.9
11.9
25
25
V/µs
V/µs
µs
µs
±12
±10
±13.8
±12.8
70
25
V
V
Ω
mA
VIN = ±11VDC
RL ≥ 2kΩ
RL ≥ 600Ω
DC, Open Loop
RL = 0Ω
Output Resistance
Short Circuit Current
POWER SUPPLY
Rated Voltage
Voltage Range,
Derated Performance
Current, Quiescent
60(6)
±15
±4
IO = 0mADC
TEMPERATURE RANGE
Specification
Operating
3.3
–40
–40
VDC
±22
5.7
VDC
mA
+85
+85
°C
°C
NOTES: (1) Measured with industry-standard noise test circuit (Figures 1 and 2). Due to errors introduced by this method, these current noise specifications should
be used for comparison purposes only. (2) Offset voltage specification are measured with automatic test equipment after approximately 0.5 seconds from power turnon. (3) Unnulled or nulled with 8kΩ to 20kΩ potentiometer. (4) Long-term voltage offset vs time trend line does not include warm-up drift. (5) Typical specification only
on plastic package units. Slew rate varies on all units due to differing test methods. Minimum specification applies to open-loop test. (6) This parameter specified by
design.
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SBOS135C
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3
ELECTRICAL CHARACTERISTICS (Cont.)
At VCC = ±15V and –40°C ≤ TA ≤ +85°C, unless otherwise noted.
OPA27
OPA37
PARAMETER
INPUT VOLTAGE (1)
Input Offset Voltage
Average Drift (2)
Supply Rejection
CONDITIONS
TA MIN to TA MAX
±VCC = 4.5 to 18V
±VCC = 4.5 to 18V
MIN
90 (3)
TYP
MAX
UNITS
±48
±0.4
±220(3)
±1.8 (3)
µV
µV/°C
122
dB
BIAS CURRENT
Input Bias Current
±21
±150 (3)
nA
OFFSET CURRENT
Input Offset Current
20
135 (3)
nA
VOLTAGE RANGE
Common-Mode Input Range
Common-Mode Rejection
OPEN-LOOP GAIN, DC
Open-Loop Voltage Gain
RATED OUTPUT
Voltage Output
Short Circuit Current
VIN = ±11VDC
±10.5 (3)
96 (3)
±11.8
122
V
dB
RL ≥ 2kΩ
113 (3)
120
dB
RL = 2kΩ
VO = 0VDC
±11.0 (3)
±13.4
25
V
mA
TEMPERATURE RANGE
Specification
–40
+85
°C
NOTES: (1) Offset voltage specification are measured with automatic test equipment after approximately 0.5s from power turn-on. (2) Unnulled or nulled with 8kΩ to
20kΩ potentiometer. (3) This parameter specified by design.
4
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SBOS135C
TYPICAL CHARACTERISTICS
At TA = +25°C, ±VCC = ±15VDC, unless otherwise noted.
INPUT VOLTAGE NOISE vs NOISE BANDWIDTH
(0.1Hz to Indicated Frequency)
INPUT OFFSET VOLTAGE WARM-UP DRIFT
Offset Voltage Change (µV)
+10
10
Voltage Noise (µVrms)
+5
0
–5
1
0.1
RS = 0 Ω
–10
0.01
1
0
3
4
5
100
6
VOLTAGE NOISE SPECTRAL DENSITY
vs SUPPLY VOLTAGE
5
R1
Voltage Noise (nV/√Hz)
-
20
R1
RSOURCE = 2 x R 1
10Hz
Resistor Noise Only
1kHz
2
10Hz
4
3
1kHz
2
1
1
100
1k
0
10k
Source Resistance (Ω)
±5
±10
±15
±20
Supply Voltage (VCC )
VOLTAGE NOISE SPECTRAL DENSITY
vs TEMPERATURE
INPUT CURRENT NOISE SPECTRAL DENSITY
5
Current Noise (pA/√Hz)
10Hz
Voltage Noise (nV/√Hz)
100k
TOTAL INPUT VOLTAGE NOISE SPECTRAL DENSITY
vs SOURCE RESISTANCE
+
4
10k
Noise Bandwidth (Hz)
40
10
8
6
1k
Time From Power Turn-On (min)
100
80
60
Voltage Noise (nV/√Hz)
2
4
3
1kHz
2
10
8
6
4
Current Noise Test Circuit
100kΩ
en
DUT
2
o
500kΩ
1
0.8
0.6
0.4
In = √(e n )2 – (130nV)2
o
1M Ω x 100
Warning: This industry-standard equation
is inaccurate and these figures should
be used for comparison purposes only!
0.2
1
500kΩ 10kΩ
0.1
–75
–50
–25
0
+25
+50
+75
+100
+125
10
Ambient Temperature (°C)
1k
10k
Frequency (Hz)
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OPA27, OPA37
SBOS135C
100
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5
TYPICAL CHARACTERISTICS (Cont.)
At TA = +25°C, ±VCC = ±15VDC, unless otherwise noted.
INPUT VOLTAGE NOISE SPECTRAL DENSITY
OPEN-LOOP FREQUENCY RESPONSE
140
120
8
Voltage Gain (dB)
Voltage Noise (nV/√Hz)
10
6
4
100
OPA37
80
OPA27
60
40
2
20
0
0
10
100
1k
1k
1M
10M
15
Offset
10
10
5
5
–50
–25
0
+25
+50
+75
Voltage Gain (dB)
15
–45
30
∅
–90
20
Gain
10
–135
0
–180
–10
–225
–20
0
+125
+100
0
40
Absolute Offset Current (nA)
Bias
100M
50
10
100
1k
Ambient Temperature (°C)
10k
100k
1M
10M
100M
Frequency (Hz)
OPA37 CLOSED-LOOP VOLTAGE GAIN AND
PHASE SHIFT vs FREQUENCY (G = 100)
COMMON-MODE REJECTION vs FREQUENCY
50
–45
30
Ø
–90
20
G=5
10
Gain
–135
0
–180
–10
–225
Phase Shift (degrees)
0
Common-Mode Rejection (dB)
140
40
Voltage Gain (dB)
100k
OPA27 CLOSED-LOOP VOLTAGE GAIN AND
PHASE SHIFT vs FREQUENCY (G = 100)
0
–20
120
100
80
OPA37
60
OPA27
40
20
0
10
100
1k
10k
100k
1M
10M
100M
1
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
Frequency (Hz)
6
10k
BIAS AND OFFSET CURRENT vs TEMPERATURE
20
–75
100
Frequency (Hz)
20
Absolute Bias Current (nA)
10
Frequency (Hz)
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SBOS135C
Phase Shift (degrees)
1
TYPICAL CHARACTERISTICS (Cont.)
At TA = +25°C, ±VCC = ±15VDC, unless otherwise noted.
POWER SUPPLY REJECTION vs FREQUENCY
OPEN-LOOP VOLTAGE GAIN vs SUPPLY VOLTAGE
130
OPA27
120
R L = 2k Ω
100
Voltage Gain (dB)
Power Supply Rejection (dB)
140
–VCC
80
+VCC
60
40
125
R L = 600 Ω
120
20
0
115
1
10
100
1k
10k
100k
1M
±5
10M
±10
Frequency (Hz)
±15
±20
±25
Supply Voltage (VCC )
OPEN-LOOP VOLTAGE GAIN vs TEMPERATURE
SUPPLY CURRENT vs SUPPLY VOLTAGE
6
135
Supply Current (mA)
Voltage Gain (dB)
5
130
RL = 2kΩ
125
120
+125°C
4
+25°C
3
–55°C
2
1
0
115
–75
–50
–25
0
+25
+50
+75
+100
+125
0
±5
Ambient Temperature (°C)
COMMON-MODE INPUT VOLTAGE RANGE
vs SUPPLY VOLTAGE
±15
±20
OPA27 SMALL SIGNAL TRANSIENT RESPONSE
+15
+60
+10
+40
T A = –55°C
T A = +25°C
+5
TA = +125°C
0
TA = –55°C
TA = +25°C
–5
TA = +125°C
Output Voltage (mV)
Common-Mode Range (V)
±10
Supply Voltage (VCC )
–10
+20
0
–20
A VCL = +1
C L = 15pF
–40
–15
–60
0
±5
±10
±15
±20
0
Supply Voltage (VCC )
1
1.5
2
2.5
Time (µs)
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SBOS135C
0.5
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7
TYPICAL PERFORMANCE CURVES (Cont.)
At TA = +25°C, ±VCC = ±15VDC, unless otherwise noted.
OPA27 LARGE SIGNAL TRANSIENT RESPONSE
+6
+40
+4
Output Voltage (V)
Output Voltage (mV)
OPA37 SMALL SIGNAL TRANSIENT RESPONSE
+60
+20
0
–20
A V = +5
C L = 25pF
–40
+2
0
–2
A VCL = +1
–4
–60
–6
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
Time (µs)
4
6
8
10
12
Time (µs)
OPA37 LARGE SIGNAL TRANSIENT RESPONSE
+15
Output Voltage (V)
+10
+5
0
–5
A V = +5
–10
–15
0
1
2
3
4
5
6
Time (µs)
8
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SBOS135C
APPLICATIONS INFORMATION
THERMOELECTRIC POTENTIALS
OFFSET VOLTAGE ADJUSTMENT
The OPA27 and OPA37 are laser-trimmed to microvolt-level
input offset voltages, and for very-low input offset voltage
drift.
The OPA27 and OPA37 offset voltages are laser-trimmed
and require no further trim for most applications. Offset
voltage drift will not be degraded when the input offset is
nulled with a 10kΩ trim potentiometer. Other potentiometer
values from 1kΩ to 1MΩ can be used, but VOS drift will be
degraded by an additional 0.1µV/°C to 0.2µV/°C. Nulling
large system offsets by use of the offset trim adjust will
degrade drift performance by approximately 3.3µV/°C per
millivolt of offset. Large system offsets can be nulled without
drift degradation by input summing.
The conventional offset voltage trim circuit is shown in Figure
3. For trimming very small offsets, the higher resolution
circuit shown in Figure 4 is recommended.
Careful layout and circuit design techniques are necessary to
prevent offset and drift errors from external thermoelectric
potentials. Dissimilar metal junctions can generate small
EMFs if care is not taken to eliminate either their sources
(lead-to-PC, wiring, etc.) or their temperature difference (see
Figure 11).
Short, direct mounting of the OPA27 and OPA37 with close
spacing of the input pins is highly recommended. Poor layout
can result in circuit drifts and offsets which are an order of
magnitude greater than the operational amplifier alone.
The OPA27 and OPA37 can replace 741-type operational
amplifiers by removing or modifying the trim circuit.
0.1µF
100kΩ
10Ω
2kΩ
DUT
4.3kΩ
4.7µF
22µF
OPA111
Voltage Gain
Total = 50,000
2.2µF
100kΩ
0.1µF
Scope
x1
RIN = 1MΩ
110kΩ
24.3kΩ
NOTE: All capacitor values are for nonpolarized capacitors only.
FIGURE 1. 0.1Hz to 10Hz Noise Test Circuit.
0.1Hz TO 10Hz NOISE
1s/div
40nv/div
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FIGURE 2. Low Frequency Noise.
OPA27, OPA37
SBOS135C
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9
NOISE: BIPOLAR VERSUS FET
COMPENSATION
Low-noise circuit design requires careful analysis of all noise
sources. External noise sources can dominate in many
cases, so consider the effect of source resistance on overall
operational amplifier noise performance. At low source impedances, the lower voltage noise of a bipolar operational
amplifier is superior, but at higher impedances the high
current noise of a bipolar amplifier becomes a serious liability. Above about 15kΩ, the OPA111 low-noise FET operational amplifier is recommended for lower total noise than the
OPA27, as shown in Figure 5.
Although internally compensated for unity-gain stability, the
OPA27 may require a small capacitor in parallel with a
feedback resistor (RF) which is greater than 2kΩ. This capacitor will compensate the pole generated by RF and CIN
and eliminate peaking or oscillation.
+VCC
(1)
8
1
Transient conditions can cause feedthrough due to the amplifier’s
finite slew rate. When using the OPA27 as a unity-gain buffer
(follower) a feedback resistor of 1kΩ is recommended, as
shown in Figure 6.
6
OPA27/37
3
4
Back-to-back diodes are used for input protection on the
OPA27 and OPA37. Exceeding a few hundred millivolts differential input signal will cause current to flow, and without
external current limiting resistors, the input will be destroyed.
Accidental static discharge, as well as high current, can damage the amplifier’s input circuit. Although the unit may still be
functional, important parameters such as input offset voltage,
drift, and noise may be permanently damaged, as will any
precision operational amplifier subjected to this abuse.
NOTE: (1) 10kΩ to 1MΩ
Trim Potentiometer
(10kΩ Recommended).
7
2
INPUT PROTECTION
±4mV Typical Trim Range
–VCC
RF
≈ 1kΩ
FIGURE 3. Offset Voltage Trim.
+VCC
–
(1)
NOTE: (1) 1kΩ Trim Potentiometer.
4.7kΩ
7
Input
+
OPA27
Output
1.9V/µs
4.7kΩ
8
2
1
OPA27/37
FIGURE 6. Pulsed Operation.
6
3
G ≈ 40dB at 1kHz.
Metal film resistors.
Film capacitors.
RL and CL per cartridge
manufacturer’s
recommendations.
100Ω
±280µV Typical Trim Range
4
–VCC
FIGURE 4. High Resolution Offset Voltage Trim.
Voltage Noise Spectral Density, EO
Typical at 1kHz (nV/√Hz)
1k
0.01µF
2
3
OPA111 + Resistor
Moving
Magnet
Cartridge
RS
OPA111 + Resistor
1µF
Output
20kΩ
RL
CL
FIGURE 7. Low-Noise RIAA Preamplifier.
Resistor Noise Only
1kΩ
OPA27 + Resistor
1k
10k
100k
1M
1kΩ
10M
Input
2
Source Resistance, RS (Ω)
3
EO = √en2 + (inRS)2 + 4kTRS
OPA27
6
Output
FO = 1kHz
FIGURE 5. Voltage Noise Spectral Density Versus Source
Resistance.
10
6
OPA37
Resistor Noise Only
10
1
100
0.03µF
97.6kΩ
OPA27 + Resistor
EO
100
7.87kΩ
FIGURE 8. Unity-Gain Inverting Amplifier.
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SBOS135C
G ≈ 50dB at 1kHz.
Metal film resistors.
Film capacitors.
RL and CL per head
manufacturer’s
recommendations.
1kΩ
1kΩ
2
Input
250Ω
3
100Ω
OPA37
6
4.99kΩ
316kΩ
2
Output
3
500pF
RL
0.01µF
OPA37
6
1µF
Output
20kΩ
CL
Magnetic Tape Head
FIGURE 9. High Slew Rate Unity-Gain Inverting Amplifier.
FIGURE 10. NAB Tape Head Preamplifier.
10kΩ
Total Gain = 106
10Ω
G =1k
DUT
Offset
10Hz LowPass Filter
Chart
Recorder
10mV/mm
5mm/s
A. 741 noise with circuit well-shielded from air
currents and RFI. (Note scale change.)
5µV
B. OP-07AH with circuit well-shielded from air
currents and RFI.
0.5µV
C. OPA27AJ with circuit well-shielded from air
currents and RFI. (Represents ultimate
OPA27 performance potential.)
0.5µV
D. OPA27 with circuit unshielded and exposed
to normal lab bench-top air currents.
(External thermoelectric potentials far
exceed OPA27 noise.)
0.5µV
E. OPA27 with heat sink and shield which
protects input leads from air currents.
Conditions same as (D).
0.5µV
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FIGURE 11. Low Frequency Noise Comparison.
OPA27, OPA37
SBOS135C
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11
3
–In
2
Gain = 100
OPA37
6
For Gain = 1000, use INA106 differential amplifier.
Bandwidth ≈ 500kHz
INA105
Differential Amplifier
RF
5kΩ
RG
101Ω
25kΩ
2
25kΩ
Input Stage Gain = 1 + 2RF /RG
RF
5kΩ
6
25kΩ
3
Output
2
3
+In
5
OPA37
25kΩ
6
1
FIGURE 12. Low Noise Instrumentation Amplifier.
0.1µF
1kΩ
100Ω
100kΩ
200Ω
2
500pF
3
OPA37
6
0.1µF
2
Output
3
2kΩ
OPA27
6
Output
1MΩ
EDO 6166
Transducer
Dexter 1M
Thermopile
Detector
Frequency Response
≈ 1kHz to 50kHz
NOTE: Use metal film resistors
and plastic film capacitor. Circuit
must be well shielded to achieve
low noise.
Responsivity ≈ 2.5 x 104V/W
Output Noise ≈ 30µVrms, 0.1Hz to 10Hz
FIGURE 13. Hydrophone Preamplifier.
FIGURE 14. Long-Wavelength Infrared Detector Amplifier.
20pF
TTL INPUT
GAIN
“1”
“0”
+1
–1
9.76kΩ
500Ω
10kΩ
Input
D1
D2
2
4.99kΩ
S1
S2
3
6
OPA27
Output
8
1
4.75kΩ
TTL
In
Balance
Trim
4.75kΩ
1kΩ
DG188
Offset
Trim
+VCC
FIGURE 15. High Performance Synchronous Demodulator.
12
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OPA27, OPA37
www.ti.com
SBOS135C
Gain = –1010V/V
VOS ≈ 2µV
Drift ≈ 0.07µV/°C
en ≈ 1nV/√Hz at 10Hz
0.9nV/√Hz at 100Hz
0.87nV/√Hz at 1kHz
Full Power Bandwidth ≈ 180kHz
Gain Bandwidth ≈ 500MHz
Equivalent Noise Resistance ≈ 50Ω
Input
20Ω
2kΩ
Signal-to-Noise Ratio ∝ √N
since amplifier noise is
uncorrelated.
2
3
20Ω
OPA37
6
2kΩ
6
2kΩ
2kΩ
2
3
20Ω
OPA37
2kΩ
2kΩ
2
2
3
20Ω
6
OPA37
2kΩ
6
3
OPA37
Output
2kΩ
2
3
20Ω
6
2kΩ
6
2kΩ
OPA37
2kΩ
2
3
OPA37
N = 10 Each OPA37
FIGURE 16. Ultra-Low Noise “N”-Stage Parallel Amplifier.
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OPA27, OPA37
SBOS135C
www.ti.com
13
5V
5V
+10V
Output
Output
+10V
0V
0V
–10V
–10V
5µs
5µs
RS = 50Ω
RS = 50Ω
1kΩ
1kΩ
2
2
Input
3
6
OPA27
3
250Ω
6
OPA37
Output
Output
500pF
Input
FIGURE 18. High Slew Rate Unity-Gain Buffer.
FIGURE 17. Unity-Gain Buffer.
+15V
200Ω
20kΩ
10µF/20V
100Ω
10kΩ
+
VIRTEC V1000
50Ω
Planar Tunnel
Input 0.01µF
Diode
RFC
1
2
3
200Ω
OPA37
6
2
Video
Output
100µF/20V
Tantalum
2
3
OPA27
+
10kΩ
500pF
Siemens LHI 948
FIGURE 19. RF Detector and Video Amplifier.
6
Output
10kΩ
3
FIGURE 20. Balanced Pyroelectric Infrared Detector.
4.8V
+
1kΩ
Airpax
Magnetic
Pickup
2
3
OPA27
6
0
Output
–
fOUT ∝ RPM • N
Where N = Number of Gear Teeth
FIGURE 21. Magnetic Tachometer.
14
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OPA27, OPA37
www.ti.com
SBOS135C
PACKAGE OPTION ADDENDUM
www.ti.com
9-Oct-2010
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
(3)
Samples
(Requires Login)
OPA27GP
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU N / A for Pkg Type
Request Free Samples
OPA27GPG4
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU N / A for Pkg Type
Contact TI Distributor
or Sales Office
OPA27GU
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
Request Free Samples
OPA27GU/2K5
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
Purchase Samples
OPA27GU/2K5E4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
Purchase Samples
OPA27GUE4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
Contact TI Distributor
or Sales Office
OPA27GUG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
Contact TI Distributor
or Sales Office
OPA37GP
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU N / A for Pkg Type
Request Free Samples
OPA37GPG4
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU N / A for Pkg Type
Contact TI Distributor
or Sales Office
OPA37GU
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
Request Free Samples
OPA37GU/2K5
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
Purchase Samples
OPA37GU/2K5G4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
Purchase Samples
OPA37GUE4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
Contact TI Distributor
or Sales Office
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
www.BDTIC.com/TI
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
9-Oct-2010
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
www.BDTIC.com/TI
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
OPA27GU/2K5
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
OPA37GU/2K5
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
www.BDTIC.com/TI
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
OPA27GU/2K5
SOIC
D
8
2500
346.0
346.0
29.0
OPA37GU/2K5
SOIC
D
8
2500
346.0
346.0
29.0
www.BDTIC.com/TI
Pack Materials-Page 2
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www.BDTIC.com/TI
www.BDTIC.com/TI
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