2SC3503/KSC3503 NPN Epitaxial Silicon Transistor 2SC3503/KSC3503 — NPN Ep it

2SC3503/KSC3503
NPN Epitaxial Silicon Transistor
Applications
• Audio, Voltage Amplifier and Current Source
• CRT Display, Video Output
• General Purpose Amplifier
Features
•
•
•
•
•
•
High Voltage : VCEO= 300V
Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V
Excellent Gain Linearity for low THD
High Frequency: 150MHz
Full thermal and electrical Spice models are available
Complement to 2SA1381/KSA1381.
Absolute Maximum Ratings*
Symbol
TO-126
1
1. Emitter
2.Collector
3.Base
Ta = 25°C unless otherwise noted
Parameter
Ratings
Units
BVCBO
Collector-Base Voltage
300
V
BVCEO
Collector-Emitter Voltage
300
V
BVEBO
Emitter-Base Voltage
5
V
IC
Collector Current(DC)
100
mA
ICP
Collector Current(Pulse)
200
mA
PC
Total Device Dissipation, TC=25°C
TC=125°C
7
1.2
W
W
TJ, TSTG
Junction and Storage Temperature
- 55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Ta=25°C unless otherwise noted
Symbol
Parameter
RθJC
Max.
Units
17.8
°C/W
Thermal Resistance, Junction to Case
* Device mounted on minimum pad size
hFE Classification
Classification
C
D
E
F
hFE
40 ~ 80
60 ~ 120
100 ~ 200
160 ~ 320
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© 2008 Fairchild Semiconductor Corporation
2SC3503/KSC3503 Rev. A1
www.fairchildsemi.com
1
2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor
March 2008
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC = 10µA, IE = 0
300
V
BVCEO
Collecto- Emitter Breakdown Voltage
IC = 1mA, IB = 0
300
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
5
V
ICBO
Collector Cut-off Current
VCB = 200V, IE = 0
0.1
µA
IEBO
Emitter Cut-off Current
VEB = 4V, IC = 0
0.1
µA
hFE
DC Current Gain
VCE = 10V, IC = 10mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 20mA, IB = 2mA
0.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 20mA, IB = 2mA
1
V
fT
Current Gain Bandwidth Product
VCE = 30V, IC = 10mA
150
MHz
Cob
Output Capacitance
VCB = 30V, f = 1MHz
2.6
pF
Cre
Reverse Transfer Capacitance
VCB = 30V, f = 1MHz
1.8
pF
40
320
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Ordering Information
Part Number*
Marking
Package
Packing Method
Remarks
2SC3503CSTU
2SC3503C
TO-126
TUBE
hFE1 C grade
2SC3503DSTU
2SC3503D
TO-126
TUBE
hFE1 D grade
2SC3503ESTU
2SC3503E
TO-126
TUBE
hFE1 E grade
2SC3503FSTU
2SC3503F
TO-126
TUBE
hFE1 F grade
KSC3503CSTU
C3503C
TO-126
TUBE
hFE1 C grade
KSC3503DSTU
C3503D
TO-126
TUBE
hFE1 D grade
KSC3503ESTU
C3503E
TO-126
TUBE
hFE1 E grade
KSC3503FSTU
C3503F
TO-126
TUBE
hFE1 F grade
* 1. Affix “-S-” means the standard TO126 Package.(see package dimensions). If the affix is ”-STS-” instead of “-S-”, that mean the short-lead TO126 package.
2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method.
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© 2008 Fairchild Semiconductor Corporation
2SC3503/KSC3503 Rev. A1
www.fairchildsemi.com
2
2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor
Electrical Characteristics* Ta=25°C unless otherwise noted
10
IB = 120µA
IB = 60µA
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
20
IB = 100µA
16
IB = 80µA
12
IB = 60µA
8
IB = 40µA
IB = 20µA
4
IB = 50µA
8
IB = 40µA
6
IB = 30µA
4
IB = 20µA
2
IB = 10µA
IB = 0
IB = 0
0
0
0
2
4
6
8
10
0
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
hFE, DC CURRENT GAIN
VCE = 10V
100
10
10
100
60
80
100
Figure 2. Static Characteristic
1000
1
40
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
1
0.1
20
1000
10
IC = 10 IB
1
VBE(sat)
0.1
VCE(sat)
0.01
0.1
IC[mA], COLLECTOR CURRENT
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
160
100
VCE = 10V
f = 1MHz
120
Cob[pF], CAPACITANCE
IC[mA], COLLECTOR CURRENT
140
100
80
60
40
10
1
20
0
0.0
0.2
0.4
0.6
0.8
1.0
0.1
0.1
1.2
1
10
100
1000
VCB[V], COLLECTOR-BASE VOLTAGE
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
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© 2008 Fairchild Semiconductor Corporation
2SC3503/KSC3503 Rev. A1
www.fairchildsemi.com
3
2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor
Typical Characteristics
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
100
Cre[pF], CAPACITANCE
f=1MHz
10
1
0.1
0.1
1
10
100
1000
1000
VCE = 30V
100
10
1
0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 7. Reverse Transfer Capacitance
Figure 8. Current Gain Gandwidth Product
1000
8
PC[W], POWER DISSIPATION
0
50
µs
IC MAX.
100
DC
c
o
25
C)
10
=
25
(T
a
=
D
C
(T
IC[mA], COLLECTOR CURRENT
7
IC MAX. (Pulse)
1ms
10ms
o
C
)
1
1
10
100
6
5
o
Tc=25 C
4
3
2
o
TC=125 C
1
0
1000
0
25
50
75
100
125
150
175
o
VCE[V], COLLECTOR-EMITTER VOLTAGE
T[ C], TEMPERATURE
Figure 9. Safe Operating Area
Figure 10. Power Derating
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© 2008 Fairchild Semiconductor Corporation
2SC3503/KSC3503 Rev. A1
www.fairchildsemi.com
4
2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor
Typical Characteristics (Continued)
2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor
Package Dimensions
8.00 ±0.30
±0.20
3.25 ±0.20
ø3.20 ±0.10
11.00
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
1.75 ±0.20
13.06
0.75 ±0.10
16.10
±0.30
±0.20
1.60 ±0.10
#1
2.28TYP
[2.28±0.20]
+0.10
0.50 –0.05
2.28TYP
[2.28±0.20]
Dimensions in Millimeters
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© 2008 Fairchild Semiconductor Corporation
2SC3503/KSC3503 Rev. A1
www.fairchildsemi.com
5
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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Rev. I31
© 2008 Fairchild Semiconductor Corporation
2SC3503/KSC3503 Rev. A1
www.fairchildsemi.com
6
2SC3503/KSC3503 NPN Epitaxial Silicon Transistor
TRADEMARKS