BCR10FM-12LB Datasheet 600V - 10A - Triac

Preliminary Datasheet
BCR10FM-12LB
R07DS1107EJ0100
Rev.1.00
Aug 30, 2013
600V - 10A - Triac
Medium Power Use
Features
•
•
•
•
• Insulated Type
• Planar Passivation Type
• Viso : 2000V
IT (RMS) : 10 A
VDRM : 600 V
Tj: 150 °C
IFGTI, IRGTI, IRGT III :30 mA(20mA) Note6
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Parameter
Voltage class
12
600
720
Symbol
Note1
Repetitive peak off-state voltage
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
10
Unit
A
Surge on-state current
ITSM
100
A
I2t
41.6
A2 s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 to +150
–40 to +150
1.9
2000
W
W
V
A
°C
°C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage Note5
R07DS1107EJ0100 Rev.1.00
Aug 30, 2013
Unit
V
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 111°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1 • T2 • G terminal to case
Page 1 of 7
BCR10FM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
mA
V
Test conditions
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 15 A,
instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger curentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
30 Note6
30 Note6
30 Note6
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
0.2
0.1
—
10
1
—
—
—
—
—
—
—
3.4
—
—
V
V
°C/W
V/μs
V/μs
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote4
Rth (j-c)
(dv/dt)c
Tj = 125°C, VD = 1/2 VDRM
Tj = 150°C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125°C
Tj = 150°C
Notes: 1.
2.
3.
4.
5.
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C /W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
6. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –5.0 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS1107EJ0100 Rev.1.00
Aug 30, 2013
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR10FM-12LB
Preliminary
Performance Curves
100
7
5
90
3
2
Surge On-State Current (A)
102
Tj = 150°C
101
7
5
3
2
Tj = 25°C
100
0.5
1.0
1.5
2.0
2.5
3.0
3.5
70
60
50
40
30
20
10
2 3 4 5 7 101
2 3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
5
3
2 VGM = 10V
Gate Voltage (V)
80
0
100
4.0
101
PG(AV) =
7
5
0.5W
3 VGT = 1.5V
2
PGM = 5W
IGM = 2A
100
7
5
3
2
IRGT I
IFGT I, IRGT III
10–1
7
VGD = 0.1V
5
1
2
10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
7
5
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
Rated Surge On-State Current
103
Typical Example
7
5
3
IRGT I, IRGT III
2
102
7
5
IFGT I
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS1107EJ0100 Rev.1.00
Aug 30, 2013
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
102 2 3 5 7 103 2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR10FM-12LB
Preliminary
No Fins
2
3
4
10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710
12 360° Conduction
Resistive,
10 inductive loads
8
6
4
2
0
2
4
6
8
10
12
16
14
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
6
4
8
10
12
14
160
Ambient Temperature (°C)
120
16
140
All fins are black painted
aluminum and greased
120
120 × 120 × t2.3
100 × 100 × t2.3
100
60 × 60 × t2.3
80
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0
2
6
4
8
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
14
0
5
Curves apply regardless
of conduction angle
140
Case Temperature (°C)
16
On-State Power Dissipation (W)
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
–1
10 1
160
Ambient Temperature (°C)
Maximum On-State Power Dissipation
3
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
R07DS1107EJ0100 Rev.1.00
Aug 30, 2013
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
106
7 Typical Example
5
3
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Page 4 of 7
BCR10FM-12LB
Preliminary
103
7
5
4
3
2
Latching Current vs.
Junction Temperature
Latching Current (mA)
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3 T2+, G+
2
Typical Example
T2–, G–
100
–40
0
40
80
120
160
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Typical Example
Tj = 150°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
100
1000
10000
Rate of Rise of Off-State Voltage (V/μs)
R07DS1107EJ0100 Rev.1.00
Aug 30, 2013
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
I Quadrant
60
40
20
0
10
100
1000
10000
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
160
160
Rate of Rise of Off-State Voltage (V/μs)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Distribution
Junction Temperature (°C)
160
0
10
103
7
5
3
2
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
7
5
3
2
Time
Typical Example
Main Voltage
(dv/dt)c
VD Tj = 125°C
Main Current
(di/dt)c IT = 4A
IT
τ = 500μs
τ
Time
101
7
5
3
2
VD = 200V
f = 3Hz
Minimum
Characteristics
Value
I Quadrant
III Quadrant
100
7 0
10
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR10FM-12LB
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
I Quadrant
III Quadrant
3
2
Minimum
Characteristics
Value
100
7
100
2 3
5 7 101
2 3
5 7 102
103
7
5
4
3
2
Typical Example
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
6Ω
Load
6Ω
C1
A
6V
330Ω
V
Test Procedure I
R1
A
6V
V
C0
R0
330Ω
Test Procedure II
C1 = 0.1 to 0.47μF C0 = 0.1μF
R0 = 100Ω
R1 = 47 to 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS1107EJ0100 Rev.1.00
Aug 30, 2013
Page 6 of 7
BCR10FM-12LB
Preliminary
Package Dimensions
Package Name
TO-220FP
JEITA Package Code
⎯
RENESAS Code
PRSS0003AG-A
Previous Code
⎯
MASS[Typ.]
1.9g
Unit: mm
10.16 ± 0.20
2.54 ± 0.20
6.68 ± 0.20
3.3 ± 0.2
1.28 ± 0.30
3.18 ± 0.20
12.98 ± 0.30
15.87 ± 0.20
φ 3.18 ± 0.10
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
4.7 ± 0.2
5.08 ± 0.20
Ordering Information
Orderable Part Number
BCR10FM-12LB#BB0
BCR10FM-12LBA8#BB0
Packing
Tube
Tube
Quantity
50 pcs.
50 pcs.
Remark
Straight type
A8 Lead form
Note : Please confirm the specification about the shipping in detail.
R07DS1107EJ0100 Rev.1.00
Aug 30, 2013
Page 7 of 7
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