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μ PA2690T1R Data

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μ PA2690T1R Data
Data Sheet
μPA2690T1R
R07DS1000EJ0101
Rev.1.01
Mar 04, 2013
COMPLEMENTARY MOSFET
20V, 4.0A, 42mΩ / –20V, –3.0A, 79mΩ
Description
The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
Features
• N-channel 2.5V, P-channel 1.8V drive available
• Low on-state resistance
N-channel
⎯ RDS (on)1 = 42 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
⎯ RDS (on)2 = 62 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
P-channel
⎯ RDS (on)1 = 79 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
⎯ RDS (on)2 = 105 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
⎯ RDS (on)3 = 182 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
• Built-in gate protection diode
• Lead-free and Halogen-free
6pinHUSON2020(Dual)
Ordering Information
Part Number
Package
μPA2690T1R-E2-AX∗1
6pinHUSON2020(Dual)
Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) ∗1
Total Power Dissipation (1 unit, 5 s) ∗2
Total Power Dissipation (2 units, 5 s) ∗2
Symbol
VDSS
N-CHANNEL
P-CHANNEL
Unit
20
±12
±4.0
±16
–20
m10
m3.0
m12
V
V
A
A
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
TSTG
1.5
2.3
150
–55 to +150
Channel Temperature
Storage Temperature
Notes: ∗1. PW≤10 μs, Duty Cycle≤1%
∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt
W
W
°C
°C
Caution: This product (N-channel) is electrostatic-sensitive device due to low ESD capability and should
be handled with caution for electrostatic discharge.
VESD = ±400V MIN. ( C = 100pF, R = 1.5KΩ )
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
Page 1 of 10
μPA2690T1R
Electrical Characteristics (TA = 25°C)
N-channel MOSFET
Characteristics
Symbol
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance ∗1
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
Drain to Source On-state
Resistance ∗1
TYP.
0.5
5.0
33
43
330
66
38
12
6.4
27
6.6
4.5
1.0
1.5
RDS(on)2
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
QG
QGS
QGD
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗1
Note:
MIN.
MAX.
Unit
1.0
±10
1.5
μA
μA
42
62
1.5
VF(S–D)
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test Conditions
VDS = 20 V, VGS = 0 V
VGS = ±10 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 2.0 A
VGS = 4.5 V, ID = 2.0 A
VGS = 2.5 V, ID = 2.0 A
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
ID = 2.0 A, VDD = 10 V,
VGS = 4.5 V, RG = 6 Ω
ID = 4.0 A , VDD = 16 V,
VGS = 10 V
IF = 4.0 A, VGS = 0 V
∗1. Pulsed
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
VGS
RL
VGS
RG
PG.
Wave Form
VDD
0
VGS
10%
IG = 2 mA
RL
50 Ω
VDD
90%
PG.
VDS
90%
VGS
0
90%
VDS
VDS
τ
τ = 1 μs
Duty Cycle ≤ 1%
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
10%
0
10%
Wave Form
td(on)
tr
ton
td(off)
tf
toff
Page 2 of 10
μPA2690T1R
P-channel MOSFET
Characteristics
Symbol
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance ∗1
Drain to Source On-state
Resistance ∗1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗1
MIN.
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
TYP.
MAX.
Unit
–1.0
m10
–1.1
μA
μA
–0.4
4.5
63
78
109
473
88
68
11.5
4.0
37.5
12.5
5.1
0.9
1.5
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
QG
QGS
QGD
79
105
182
1.5
VF(S–D)
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test Conditions
VDS = –20 V, VGS = 0 V
VGS = m8 V, VDS = 0 V
VDS = –10 V, ID = –1 mA
VDS = –5 V, ID = –2 A
VGS = –4.5 V, ID = –1.5 A
VGS = –2.5 V, ID = –1.5 A
VGS = –1.8 V, ID = –1.5 A
VDS = –10 V, VGS = 0 V,
f = 1.0 MHz
ID = –1.5 A, VDD = –10.0 V,
VGS = –4.0 V, RG = 6 Ω
ID = –3.0 A , VDD = –16 V,
VGS = –4.5 V
IF = 3.0 A, VGS = 0 V
∗1. Pulsed
Note:
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
D.U.T.
RL
RG
PG.
VGS(−)
VGS
Wave Form
0
VGS
10%
IG = −2 mA
RL
50 Ω
VDD
90%
PG.
VDD
VDS(−)
VGS(−)
0
VDS
Wave Form
τ
τ = 1 μs
Duty Cycle ≤ 1%
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
VDS
90%
90%
10% 10%
0
td(on)
tr td(off)
ton
tf
toff
Page 3 of 10
μPA2690T1R
Typical Characteristics (TA = 25°C)
N-channel MOSFET
DERATING FACTOR OF FORWARD BIAS SAFE
TOTAL POWER DISSIPATION vs.
OPERATING AREA
AMBIENT TEMPERATURE
2.5
120
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
140
100
80
60
40
20
Mounted on a glass expoxy board
of 25.4mm x 25.4mm 0.8mmt
PW=5sec
2
1.5
2units
1
1unit
0.5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA -Ambient Temperature - °C
TA -Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID – Drain Current - A
100
10
ID(pulse)=16A
ID(DC)=4A
1
Power Dissipation Limited
0.1
TA=25ºC 2units
Single Pulse
Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
0.01
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
Single pulse
Rth(ch-a)=83.3ºC/W(1units 5s)
100
Rth(ch-a)=54.3ºC/W(2units 5s)
10
1
0.1
0.01
Rth(ch-A) : Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
Page 4 of 10
μPA2690T1R
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
10
20
2.5V
10
1
ID - Drain Current - A
ID –Drain Current - A
VGS=4.5V
15
TA=150°C
75°C
25°C
-55°C
0.1
0.01
5
0.001
Pulsed
0
0
0.5
1
1.5
VDS = 10V
Pulsed
0.0001
2
0
0.5
2
GATE TO SOURCE CUT-OFF VOLTAGE vs.
FORWARD TRANSFER ADMITTANCE vs.
CHANNEL TEMPERATURE
DRAIN CURRENT
1.2
100
0.8
0.6
0.4
0.2
VDS = 10V
ID = 1mA
0.0
-50
0
50
100
150
10
TA = 150°C
75°C
25°C
-55°C
1
0.1
S
1.0
0.01
VDS = 10V
Pulsed
0.001
0.001
0.01
Tch - Channel Temperature - °C
0.1
1
10
100
ID – Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
GATE TO SOURCE VOLTAGE
100
Pulsed
80
60
VGS = 2.5V
40
4.5V
20
0
0.1
1
10
ID - Drain Current - A
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
100
RDS(on) – Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
1.5
VGS - Gate to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(off) – Gate to Source Cut-off Voltage - V
VDS - Drain to Source Voltage - V
1
100
ID = 2.0A
Pulsed
80
60
40
20
0
0
2
4
6
8
10
VGS - Gate to Source Voltage - V
Page 5 of 10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CAPACITANCE vs.
CHANNEL TEMPERATURE
VOLTAGE
100
Ciss, Coss, Crss - Capacitance - pF
Pulsed
ID = 2.0A
80
60
VGS = 2.5V
40
4.5V
20
1,000
Ciss
100
Coss
Crss
VGS = 0V
f = 1.0MHz
10
0
-50
0
50
100
0.1
150
1
10
100
VDS – Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
VDS - Drain to Source Voltage - V
100
td(on), tf, td(off), tr - Switching Time -μs
DRAIN TO SOURCE
td(off)
td(on)
tf
10
tr
VDD = 10V
VGS = 4.5V
RG = 6Ω
1
0.1
1
10
VDD= 20V
16V
10V
25
VDS
20
12
VGS
10
8
15
6
10
4
5
2
ID=4.0A
0
100
0
0
1
2
3
4
5
6
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
IF - Diode Forward Current – A
100
Pulsed
VGS=4.5V
2.5V
10
0V
1
0
0.5
1
1.5
VF(S–D) - Drain to Source Voltage - V
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
Page 6 of 10
VGS - Gate to Source Voltage - V
RDS(on) –Drain to Source On-state Resistance - mΩ
μPA2690T1R
μPA2690T1R
P-channel MOSFET
DERATING FACTOR OF FORWARD BIAS SAFE
TOTAL POWER DISSIPATION vs.
OPERATING AREA
AMBIENT TEMPERATURE
2.5
120
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
140
100
80
60
40
20
Mounted on a glass expoxy board
of 25.4mm x 25.4mm 0.8mmt
PW=5sec
2
1.5
2units
1
1unit
0.5
0
0
0
25
50
75
100
125
150
175
0
25
TA -Ambient Temperature - °C
50
75
100
125
150
175
TA -Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID – Drain Current - A
-100
RDS(on) Limited
(VGS=–4.5V)
ID(pulse)=–12A
-10
ID(DC)=–3A
-1
Power Dissipation Limited
-0.1
-0.01
TA=25ºC 2units
Single Pulse
Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
Single pulse
Rth(ch-a)=83.3ºC/W(1units 5s)
100
Rth(ch-a)=54.3ºC/W(2units 5s)
10
1
0.1
0.01
Rth(ch-A) : Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
Page 7 of 10
μPA2690T1R
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
-100
-14
-10
VGS=–4.5V
-10
ID - Drain Current - A
ID –Drain Current - A
-12
–2.5V
-8
–1.8V
-6
-4
TA=150°C
75°C
25°C
-55°C
-1
-0.1
-0.01
-0.001
-2
Pulsed
-0
-0
-0.5
-1
VDS = –10V
Pulsed
-0.0001
-1.5
-0
-1.5
-2
GATE TO SOURCE CUT-OFF VOLTAGE vs.
FORWARD TRANSFER ADMITTANCE vs.
CHANNEL TEMPERATURE
DRAIN CURRENT
1000
-1
-0.6
-0.4
-0.2
VDS = –10V
ID = –1mA
-0
-50
0
50
100
150
100
TA = 150°C
75°C
25°C
-55°C
10
1
S
-0.8
0.1
0.01
-0.01
Tch - Channel Temperature - °C
VDS = –5V
Pulsed
-0.1
-1
-10
-100
ID – Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
GATE TO SOURCE VOLTAGE
200
Pulsed
150
VGS = –1.8V
–2.5V
100
–4.5V
50
0
-0.1
-1
-10
ID - Drain Current - A
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
-100
RDS(on) – Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
-1
VGS - Gate to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(off) – Gate to Source Cut-off Voltage - V
VDS - Drain to Source Voltage - V
-0.5
200
ID = –1.5A
Pulsed
150
100
50
0
-0
-2
-4
-6
-8
VGS - Gate to Source Voltage - V
Page 8 of 10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CAPACITANCE vs.
CHANNEL TEMPERATURE
VOLTAGE
Pulsed
ID = –1.5A
140
VGS = –1.8V
120
–2.5V
100
80
–4.5V
60
40
1000
Ciss
100
Coss
Crss
VGS = 0V
f = 1.0MHz
20
10
-0.1
0
-50
0
50
100
150
-1
-10
-100
VDS – Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-5
-25
td(off)
tf
10
td(on)
tr
VDD = –10V
VGS = –4.0V
RG = 6Ω
1
0.1
1
10
100
VDS - Drain to Source Voltage - V
100
td(on), tf, td(off), tr - Switching Time -μs
DRAIN TO SOURCE
VGS
VDD= –16V
–10V
–4V
-20
VDS
-4
-15
-3
-10
-2
-5
-1
ID = –3.0A
-0
-0
0
1
2
3
4
5
6
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
IF - Diode Forward Current – A
100
Pulsed
10
1
0.1
VGS = 0V
0.01
0
0.5
1
1.5
VF(S–D) - Drain to Source Voltage - V
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
Page 9 of 10
VGS - Gate to Source Voltage - V
160
Ciss, Coss, Crss - Capacitance - pF
RDS(on) –Drain to Source On-state Resistance - mΩ
μPA2690T1R
μPA2690T1R
Package Drawings (Unit: mm)
6pinHUSON2020(DUAL)
2 ± 0.1
A
0.25 ± 0.05
RENESAS Package code : PWSN0006JD-A
B
1.7 ± 0.05
4
5
6
3
0 to 0.01
0.05 S
0.65 ± 0.03
Max.0.75
0.2 ± 0.03
0.7 ± 0.04
3
0.3 ± 0.05
1 ± 0.05
2 ± 0.1
0.3
6
2
1
0.05 M S A B
S
Equivalent Circuit / Pin Assignment
N-channel
P-channel
3: Drain
6: Drain
2: Gate
Body
Diode
5: Gate
5
4
Body
Diode
3
Gate
Protection 1: Source
Diode
Remark
Gate
Protection 4: Source
Diode
6
3
6
2
1
The diode connected between the gate and source of the transistor serves as a protector against
ESD. When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
Page 10 of 10
Notice
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Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
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