DMG302PU Product Summary Features

DMG302PU
25V P-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
Product Summary
Features
ID
TA = +25°C
-0.17A
-0.15A
•
Low On-Resistance
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
Description
•
Small Surfaced Mount Package
•
ESD Protected Gate (>6kV Human Body Model)
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
performance, making it ideal for high efficiency power management
•
Qualified to AEC-Q101 Standards for High Reliability
V(BR)DSS
RDS(ON)
-25V
10Ω @ VGS = -4.5V
13Ω @ VGS = -2.7V
applications.
Mechanical Data
Applications
•
Case: SOT23
•
•
DC-DC Converters
•
Power Management Functions
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Solderable per MIL-STD-202, Method 208 e3
•
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
•
Terminal Connections: See Diagram
•
Weight: 0.008 grams (approximate)
D
D
G
ESD HBM >6kV
S
G
Gate Protection
Diode
Top View
Pin Configuration
Top View
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMG302PU-7
DMG302PU-13
Notes:
Compliance
Standard
Standard
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
13P
13P
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
13P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2012
Z
Feb
2
Mar
3
2013
A
Apr
4
May
5
2014
B
Jun
6
2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
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DMG302PU
Document number: DS36227 Rev. 2 - 2
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E
Nov
N
Dec
D
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DMG302PU
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
NEW PRODUCT
Symbol
Value
Drain-Source Voltage
VDSS
-25
Units
V
Gate-Source Voltage
VGSS
-8
V
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-0.17
-0.14
A
Continuous Drain Current (Note 6) VGS = -2.7V
Steady
State
TA = +25°C
TA = +70°C
ID
-0.15
-0.12
A
IDM
-0.5
A
Pulsed Drain Current TP ≤ 300µs, Duty Cycle = 2%)
Thermal Characteristics
Characteristic
Symbol
(Note 5)
(Note 6)
Total Power Dissipation
PD
(Note 5)
(Note 6)
(Note 6)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Value
0.33
0.45
Operating and Storage Temperature Range
RθJA
376
275
RθJC
81
TJ, TSTG
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
-25
⎯
⎯
V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
-1
µA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
-100
nA
VGS = -8V, VDS = 0V
VGS(th)
-0.65
-0.96
-1.5
V
VDS = VGS, ID = -250µA
⎯
2.5
10
Drain-Source Breakdown Voltage
VGS = 0V, ID = -250µA
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
RDS(ON)
Ω
VGS = -4.5V, ID = -0.2A
⎯
3
13
Forward Transfer Admittance
|Yfs|
⎯
189
⎯
ms
VDS = -5V, ID = -0.2A
Diode Forward Voltage (Note 7)
VSD
⎯
⎯
-1.5
V
VGS = 0V, IS = -0.2A
Ciss
⎯
27.2
⎯
6.1
⎯
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
nC
VDS = -5V, ID = -0.2A,
VGS = -4.5V,
ns
VGS = -4.5V, VDD = -6V
ID = -0.2A, RG = 50Ω
VGS = -2.7V, ID = -0.05A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Coss
⎯
Reverse Transfer Capacitance
Crss
⎯
1.7
⎯
Total Gate Charge
Qg
⎯
0.35
⎯
Qgs
⎯
0.08
⎯
Gate-Drain Charge
Qgd
⎯
0.06
⎯
Turn-On Delay Time
td(on)
⎯
4.5
⎯
tr
⎯
2.3
⎯
td(off)
⎯
24.1
⎯
tf
⎯
11.0
⎯
Gate-Source Charge
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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1.0
0.6
VGS = -4.5V
VDS = -5.0V
0.9
VGS = -3.0V
0.6
VGS = -2.7V
0.5
VGS = -2.5V
VGS = -2.0V
0.3
VGS = -1.5V
0.1
0.0
TA = 150°C
T A = 125 °C
TA = -55° C
0.4
0.3
0.2
0.1
VGS = -1.2V
0
1
2
3
4
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
6.0
5.5
5.0
4.5
VGS = -2.7V
4.0
3.5
3.0
VGS = -4.5V
2.5
2.0
1.5
1.0
0.5
0
0
0.2
0.4
0.6
0.8
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1
1.8
VGS = -8V
ID = -500mA
1.6
1.4
VGS = -4.5V
ID = -300mA
1.2
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
-ID, DRAIN CURRENT (A)
0.7
0.4
TA = 25°C
VGS = -4.0V
1
0.8
RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω)
-ID, DRAIN CURRENT (A)
0.5
VGS = -8.0V
0.2
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
0.8
TA = 85°C
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
10
VGS = -4.5V
9
8
T A = 150 °C
7
6
TA = 125°C
5
T A = 85°C
4
3
T A = 25°C
2
TA = -55°C
1
0
0
0.2
0.4
0.6
0.8
-ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
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1
5
4.5
VGS = -4.5V
ID = -300mA
4
3.5
3
2.5
VGS = -8V
ID = -500mA
2
1.5
1
0.5
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
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-IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1
1.1
1
-ID = 1mA
0.9
0.8
-ID = 250µA
0.7
0.6
0.8
0.6
0.4
TA= 25°C
0.2
0.5
0.4
-50
0
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
-25
100
0
0.3
0.6
0.9
1.2
1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
8
-VGS, GATE-SOURCE VOLTAGE (V)
f = 1MHz
CT, JUNCTION CAPACITANCE (pF)
Ciss
10
Coss
Crss
1
0
5
10
15
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
25
6
VDS = -5V
ID = -200mA
4
2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
0.7
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
1.2
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
RθJA(t) = r(t) * RθJA
RθJA = 373°C/W
Duty Cycle, D = t1/ t2
D = 0.005
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Figure 11 Transient Thermal Resistance
10
100
1,000
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
NEW PRODUCT
B C
H
K
J
M
K1
D
F
L
G
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
2.0
C
1.35
E
C
X
E
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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Copyright © 2014, Diodes Incorporated
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