DMG4406LSS Product Summary Features and Benefits

DMG4406LSS
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON) max
ID max
TA = +25°C

100% Unclamped Inductive Switch (UIS) test in production

Low On-Resistance
11mΩ @ VGS = 10V
10.3A

Low Input Capacitance
9.3A

Fast Switching Speed

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
V(BR)DSS
NEW PRODUCT
ADVANCE INFORMATION
30V
Features and Benefits
15mΩ @ VGS = 4.5V
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data

Applications

Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0

Backlighting

Power Management Functions

DC-DC Converters
SO-8

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See diagram

Terminals: Finish  Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3

Weight: 0.008 grams (approximate)
S
D
S
D
S
D
G
D
Top View
D
G
S
Top View
Internal Schematic
Equivalent Circuit
Case
SO-8
Packaging
2,500/Tape & Reel
Ordering Information (Note 4)
Part Number
DMG4406LSS-13
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
G4406LS
G4406LS
YY WW
YY WW
1
4
Chengdu A/T Site
1
= Manufacturer’s Marking
G4406LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
4
Shanghai A/T Site
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DMG4406LSS
Document number: DS35539 Rev. 8 - 2
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DMG4406LSS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
NEW PRODUCT
ADVANCE INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
ID
Value
30
±20
10.3
8.3
ID
13.4
10.6
A
ID
9.3
7.3
A
A
12.0
9.5
2.5
90
22
24
A
A
A
mJ
Value
1.5
80
48
2.0
61
37
6.4
-55 to 150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
ID
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH
Units
V
V
IS
IDM
IAR
EAR
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Total Power Dissipation (Note 5)
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
RJA
Total Power Dissipation (Note 6)
PD
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
RθJC
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
—
—
—
—
—
—
1
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
—
8
12
32
0.70
2.0
11
15
1.0
V
Static Drain-Source On-Resistance
1.4
—
—
—
—
VDS = VGS, ID = 250μA
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 10A
VDS = 5V, ID = 12A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1281
145
125
1.2
12.5
26.7
3.6
4.4
5.2
21.2
22.3
5.1
8.5
7.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
mΩ
S
V
Test Condition
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = 15V, ID = 12A
ns
VDD = 15V, VGS = 10V,
RL = 1.25Ω, RG = 3Ω,
ns
nC
IF=12A, di/dt=500A/µs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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DMG4406LSS
Document number: DS35539 Rev. 8 - 2
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DMG4406LSS
30
30
VGS = 10V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 4.0V
20
VGS = 3.5V
VGS = 3.0V
15
10
5
0
0.5
1.0
1.5
VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
RDS(ON), DRAIN-SOURCE ON-RESISTANCE()
0.02
0.01
5
10
15
20
25
ID, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
TA = 150C
0
2.0
0.03
0
15
TA = 125C
TA = 85C
TA = 25C
0.04
0
20
5
VGS = 2.5V
0
VDS = 5.0V
30
TA = -55C
0
1
2
3
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
VGS = 4.5V
0.03
TA = 125C
0.02
T A = 150C
TA = 85 C
T A = 25C
0.01
T A = -55C
0
0
5
10
15
20
25
ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
Document number: DS35539 Rev. 8 - 2
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30
VGS = 4.5V
ID = 5A
VGS = 10V
ID = 10A
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
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DMG4406LSS
4
0.04
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON),DRAIN-SOURCE ON-RESISTANCE()
25
VGS = 4.5V
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
ADVANCE INFORMATION
25
September 2013
© Diodes Incorporated
DMG4406LSS
VGS(TH), GATE THRESHOLD VOLTAGE(V)
IS, SOURCE CURRENT (A)
25
15
10
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1,800
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
f = 1MHz
IDSS, LEAKAGE CURRENT (nA)
1,600
1,400
1,200
C iss
1,000
800
600
400
TA = 150°C
1,000
TA = 125°C
100
TA = 85°C
10
Coss
200
0
0
10,000
2,000
CT, JUNCTION CAPACITANCE (pF)
20
5
TA = 25°C
Crss
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
1
10
20
30
VDS, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
30
10
0
1,000
9
f = 1MHz
8
100
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
NEW PRODUCT
ADVANCE INFORMATION
30
7
6
5
4
3
2
RDS(on)
Limited
10
DC
PW = 10s
1
0.1
PW = 100ms
PW = 10ms
PW = 1ms
PW = 100µs
PW = 10µs
1
0
PW = 1s
0
5
10
15
20
25
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
30
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
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DMG4406LSS
Document number: DS35539 Rev. 8 - 2
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September 2013
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DMG4406LSS
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
RJA(t) = r(t) * RJA
RJA = 60°C/W
Duty Cycle, D = t1/ t2
D = 0.005
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
0.254
NEW PRODUCT
ADVANCE INFORMATION
1
E1 E
A1
L
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0
8

All Dimensions in mm
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
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DMG4406LSS
Document number: DS35539 Rev. 8 - 2
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DMG4406LSS
IMPORTANT NOTICE
NEW PRODUCT
ADVANCE INFORMATION
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2013, Diodes Incorporated
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Document number: DS35539 Rev. 8 - 2
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