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DMN4800LSS Product Summary Features
DMN4800LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Low On-Resistance RDS(ON) max ID max TA = +25°C Low Input Capacitance Fast Switching Speed 14mΩ @ VGS = 10V 8.6A Low Input/Output Leakage 7.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability NEW PRODUCT V(BR)DSS 30V Features 20mΩ @ VGS = 4.5V Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: SO-8 Applications Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals Connections: See Diagram Power Management Functions DC-DC Converters Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.072g (approximate) SO-8 S D S D S D G D Top View D G S Equivalent circuit Top View Internal Schematic Ordering Information (Note 4) Part Number DMN4800LSS-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 N4800LS N4800LS YY WW YY WW 1 4 Chengdu A/T Site 1 = Manufacturer’s Marking N4800LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 4 Shanghai A/T Site www.BDTIC.com/DIODES DMN4800LSS Document number: DS31736 Rev. 7 - 2 1 of 6 www.diodes.com October 2013 © Diodes Incorporated DMN4800LSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Value 30 25 Units V V ID 8.6 6.3 A TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State Continuous Drain Current (Note 6) VGS = 10V Symbol VDSS VGSS t<10s 11.8 ID Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (Note 7) A 9.0 2.4 50 IS IDM A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Value 1.46 0.9 86 46 1.7 1.0 75 40 15 -55 to +150 PD RJA PD RJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage (Note 8) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 1 100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) 0.8 1.6 14 20 V RDS (ON) gfs VSD 1.2 11 14 8 0.72 0.94 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A VDS = 10V, ID = 9A VGS = 0V, IS = 1A Ciss Coss Crss RG Qg Qgs Qgd td(on) tr td(off) tf 798 128 122 1.37 8.7 1.7 2.4 5.03 4.50 26.33 8.55 pF pF pF Ω mΩ Test Condition VDS = 10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VGS = 5V, VDS = 15V, ID = 9A ns VDD = 15V, VGEN = 10V, RL = 15ΩRG = 6.0ΩID = 1A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. www.BDTIC.com/DIODES DMN4800LSS Document number: DS31736 Rev. 7 - 2 2 of 6 www.diodes.com October 2013 © Diodes Incorporated DMN4800LSS 30 30 VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 VGS = 3.0V 15 10 VGS = 2.5V 20 15 10 TA = 150°C TA = 125°C 5 VGS = 2.0V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 2 0.08 0.07 0.06 VGS = 2.5V 0.05 0.04 0.03 0.02 VGS = 4.5V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 0.03 VGS = 4.5V TA = 150°C TA = 125°C 0.02 TA = 85°C TA = 25°C 0.01 TA = -55°C 0 0 RDSON , DRAIN-SOURCE ON-RESISTANCE () 1.4 1.2 VGS = 4.5V ID = 10A 0.8 VGS = 10V ID = 11.6A 5 10 15 20 ID, DRAIN CURRENT (A) 30 0.025 0.02 VGS = 4.5V ID = 10A 0.015 0.01 VGS = 10V ID = 11.6A 0.005 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature Fig. 5 On-Resistance Variation with Temperature www.BDTIC.com/DIODES Document number: DS31736 Rev. 7 - 2 25 0.03 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) DMN4800LSS 3 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.6 0.6 -50 TA = -55°C 30 1.8 1.0 TA = 85°C TA = 25°C 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 VDS = 5V 25 VGS = 4.5V 5 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 25 3 of 6 www.diodes.com October 2013 © Diodes Incorporated DMN4800LSS TA = 25°C 1.2 ID = 1mA IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 20 ID = 250µA 0.8 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature VGS, GATE-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 12 8 4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10 1,000 Ciss Coss 100 10 16 0 0.4 10,000 Crss 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 8 6 ID = 11.6A ID = 9A 4 2 0 30 0 2 4 6 8 10 12 14 16 QG, TOTAL GATE CHARGE (nC) Fig. 10 Total Gate Charge 100 10,000 RDS(on) Limited 1,000 ID, DRAIN CURRENT (A) TA = 150°C IDSS, LEAKAGE CURRENT (nA) NEW PRODUCT 1.6 TA = 125°C 100 TA = 85°C 10 TA = 25°C T A = -55°C 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) 30 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.01 0.1 Fig. 11 Typical Leakage Current vs. Drain-Source Voltage PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area www.BDTIC.com/DIODES DMN4800LSS Document number: DS31736 Rev. 7 - 2 4 of 6 www.diodes.com 100 October 2013 © Diodes Incorporated DMN4800LSS r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 85°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 D = Single Pulse 0.001 0.0001 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response 100 1,000 Package Outline Dimensions 0.254 NEW PRODUCT 1 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm D Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y www.BDTIC.com/DIODES DMN4800LSS Document number: DS31736 Rev. 7 - 2 5 of 6 www.diodes.com October 2013 © Diodes Incorporated DMN4800LSS IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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