DMGD7N45SSD Product Summary Features

DMGD7N45SSD
450V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS
RDS(ON) MAX
ID
TA = +25°C
•
Low Input Capacitance
•
High BVDss Rating for Power Application
450V
4Ω @ VGS = 10V
0.85A
•
Low Input/Output Leakage
•
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Description
This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power
management applications.
Mechanical Data
•
•
Applications
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Motor Control
•
Moisture Sensitivity: Level 1 per J-STD-020
Backlighting
•
Terminals Connections: See diagram below
•
DC-DC Converters
•
•
Power Management Functions
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208 e3
•
Weight: 0.074 grams (approximate)
•
•
S1
D1
G1
D1
S2
D2
G2
D2
D1
G2
G1
S2
S1
Top View
Pin Configuration
Top View
D2
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMGD7N45SSD-13
Notes:
Compliance
Standard
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
D7N45SD
D7N45SD
YY WW
YY WW
1
4
Chengdu A/T Site
1
4
= Manufacturer’s Marking
D7N45SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Shanghai A/T Site
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
450
V
Gate-Source Voltage
VGSS
±30
V
ID
0.5
0.62
0.85
IDM
2.2
A
IS
1.7
A
Steady State
t < 10s
t < 1s
Continuous Drain Current (Note 5) VGS = 10V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
NEW PRODUCT
Maximum Body Diode Forward Current (Note 5)
L = 60mH
L = 10mH (Note 8)
L = 60mH
L = 10mH (Note 8)
Avalanche Current (Note 6)
Avalanche Energy (Note 6)
IAS
EAS
A
A
1.4
2.2
56
25
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Steady state
Thermal Resistance, Junction to Ambient (Note 5)
Symbol
Value
PD
1.64
W
78
°C/W
RΘJA
t<10s
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Units
20.2
°C/W
RΘJC
13.3
°C/W
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
Unit
Test Condition
450
⎯
⎯
V
VGS = 0V, ID = 10mA
⎯
⎯
1
µA
VDS = 450V, VGS = 0V
IGSS
⎯
⎯
±100
nA
VGS = ±30V, VDS = 0V
VGS(th)
3.5
⎯
4.5
V
VDS =10V ID = 1mA
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
RDS (ON)
⎯
3
4
Ω
VGS = 10V, ID = 0.4A
Forward Transfer Admittance
|Yfs|
0.55
1.1
⎯
S
VDS = 10V, ID =0.4A
Diode Forward Voltage
VSD
⎯
0.7
1.2
V
VGS = 0V, IS = 0.7A
Input Capacitance
Ciss
⎯
256
⎯
Output Capacitance
Coss
⎯
22.5
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
0.83
⎯
VDS = 25V, VGS = 0V
f = 1MHz
Gate Resistance
RG
⎯
2.3
⎯
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 10V)
Qg
⎯
6.9
⎯
Gate-Source Charge
Qgs
⎯
1.4
⎯
nC
VDS = 360V,ID = 0.7A, VGS = 10V
Gate-Drain Charge
Qgd
⎯
3.4
⎯
Turn-On Delay Time
tD(on)
⎯
7
⎯
nS
VGS = 10V, RL = 562Ω, RG = 10Ω,
ID = 0.4A
Static Drain-Source On-Resistance
DYNAMIC CHARACTERISTICS (Note 8)
Turn-On Rise Time
tr
⎯
6.4
⎯
Turn-Off Delay Time
tD(off)
⎯
18.9
⎯
tf
⎯
56.6
⎯
Body Diode Reverse Recovery Time
trr
⎯
103
⎯
nS
Body Diode Reverse Recovery Charge
Qrr
⎯
314
⎯
nC
Turn-Off Fall Time
Notes:
IF = 1A, dI/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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1.0
2.0
VGS = 15V
0.8
VGS = 7.0V
1.4
VGS = 5.5V
1.2
1.0
0.8
0.6
0.4
VGS = 5.0V
0.2
TA = 85°C
0.4
T A = 125°C
TA = 25°C
0.2
2
6
8 10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
4
0
1
20
4.0
2
3
4
5
6
7
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
8
10
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
TA = 150°C
TA = -55°C
0.0
0
3.8
3.6
3.4
3.2
VGS = 10V
3.0
2.8
2.6
2.4
2.2
2.0
0.6
VGS = 4.8V
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
12
9
8
ID = 400mA
7
6
5
4
3
2
2
4
6 8 10 12 14 16 18 20 22 24 26 28 30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
3.0
VGS = 10V
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
ID, DRAIN CURRENT (A)
1.6
VDS = 10V
ID, DRAIN CURRENT (A)
1.8
NEW PRODUCT
VGS = 6.0V
VGS = 20V
10
TA = 150°C
8
TA = 125°C
6
TA = 85°C
4
T A = 25°C
2
2.5
VGS = 20V
ID = 1.0A
2.0
VGS = 10V
ID = 0.7A
1.5
1.0
0.5
TA = -55°C
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
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RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
5.0
8
VGS(th), GATE THRESHOLD VOLTAGE (V)
9
VGS =20V
ID = 1.0A
7
6
VGS = 10V
ID = 0.7A
5
4
3
2
1
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
4.5
4.0
ID = 1mA
ID = 250µA
3.5
3.0
2.5
2.0
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
2.0
1000
1.8
CT, JUNCTION CAPACITANCE (pF)
Ciss
IS, SOURCE CURRENT (A)
1.6
1.4
TA = 150°C
1.2
T A =85°C
1.0
TA = 25°C
0.8
TA = 125°C
0.6
TA = -55°C
0.4
100
Coss
10
Crss
1
0.2
0
0
f = 1MHz
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
10
PW = 100µs
RDS(on)
Limited
8
ID, DRAIN CURRENT (A)
VGS GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
10
VDS = 360V
ID = 0.7A
6
4
2
0
0
1
DC
0.1
PW = 10s
PW = 1s
PW = 100ms
0.01 TJ(max) = 150°C
PW = 10ms
TA = 25°C
VGS = 10V
Single Pulse
DUT on 1 * MRP FR-4 Board
1
2
3
4
5
6
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
7
0.001
0.1
PW = 1ms
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
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10
10
PW = 100µs
-ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1
DC
0.1
PW = 10s
PW = 1s
PW = 100ms
0.01
0.001
0.1
TJ(max) = 150°C
TA = -25°C
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
PW = 10ms
1
0.1
DC
PW = 10s
PW = 1s
0.01 T
J(max) = 150°C
PW = 100ms
TA = 85°C
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
PW = 1ms
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13 SOA, Safe Operation Area
RDS(on)
Limited
1000
0.001
0.1
PW = 10ms
PW = 1ms
PW = 100µs
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 14 SOA, Safe Operation Area
1000
10
RDS(on)
Limited
1
-ID, DRAIN CURRENT (A)
0.1
DC
PW = 10s
0.01
0.001
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
TJ(max) = 150°C
TA = 125°C
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
0.0001
0.1
PW = 100µs
1
10
100
1000
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 15 SOA, Safe Operation Area
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
RDS(on)
Limited
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 98°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 16 Transient Thermal Resistance
10
100
1,000
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Package Outline Dimensions
0.254
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E1 E
NEW PRODUCT
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
h
A2 A A3
7°~9°
45°
Detail ‘A’
b
e
D
SO-8
Dim
Min
Max
A
—
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
—
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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Copyright © 2014, Diodes Incorporated
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