RF2317 LINEAR CATV AMPLIFIER Features

RF2317
LINEAR CATV AMPLIFIER
Package Style: CJ2BAT0
NC 1
Features






DC to 3.0GHz Operation
Internally Matched Input and
Output
15dB Small Signal Gain
4.8dB Noise Figure at
900MHz
38dBm Output IP3 at
900MHz
Single 9V to 12V Power
Supply
GND 2
15 GND
GND 3
14 GND
RF IN 4





CATV Distribution Amplifiers
Cable Modems
Broadband Gain Blocks
Laser Diode Driver
Return Channel Amplifier
Base Stations
13 RF OUT
NC 5
12 NC
GND 6
11 GND
GND 7
10 GND
NC 8
Apllications

16 NC
9 NC
Functional Block Diagram
Product Description
The RF2317 is a general purpose, low-cost high-linearity RF amplifier IC. The device
is manufactured on an advanced gallium arsenide heterojunction bipolar transistor
(HBT) process, and has been designed for use as an easily cascadable 75 gain
block. The gain flatness of better than ±0.5dB from 50MHz to 1000MHz, and the
high linearity, make this part ideal for cable TV applications. Other applications
include IF and RF amplification in wireless voice and data communication products
operating in frequency bands up to 3GHz. The device is self-contained with 75
input and output impedances and requires only two external DC biasing elements
to operate as specified.
Ordering Information
RF2317
RF2317SR
RF2317TR7
RF2317TR13
RF2317 50
RF2317 75

GaAs HBT
GaAs MESFET
InGaP HBT
Sample bag with 25 pieces
7" Sample reel with 100 pieces
7" Reel with 750 pieces
13" Reel with 2500 pieces
1000MHz PCBA with 5-piece sample bag
1000MHz PCBA with 5-piece sample bag
Optimum Technology Matching® Applied
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120511
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1 of 11
RF2317
Absolute Maximum Ratings
Parameter
Rating
Unit
250
mA
Input RF Power
+18
dBm
Output Load VSWR
20:1
Device Current
Ambient Operating Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
T = +25°C , ICC = 180mA, RC = 10.2,
50 System
Overall (50)
Frequency Range
DC
Gain
13.5
14.3
Noise Figure
4.9
Input VSWR
1.7:1
Output VSWR
2.3:1
Output IP3
+37
Output IP2
Output P1dB
3000
MHz
15.0
dB
dB
3dB Bandwidth
From 100MHz to 1000MHz
Appropriate values for the DC blocking capacitors and bias inductor are required to maintain
this VSWR at the intended operating frequency
range.
+47
dBm
At 100MHz
+42
dBm
At 500MHz
+37
dBm
At 900MHz
+55
dBm
F1 = 400MHz, F2 = 500MHz, FOUT = 100MHz
+25.5
dBm
At 100MHz
+24
dBm
At 500MHz
At 900MHz
+22
dBm
19.5
dB
ThetaJC
55
°C/W
Maximum Junction Temperature
150
°C
Mean Time To Failures
3100
years
TAMB = +85°C
58
°C/W
ICC = 180mA, PDISS = 1.5W, TAMB = 85°C
Reverse Isolation
Thermal
ThetaJC
Maximum Junction Temperature
175
°C
Mean Time To Failures
380
years
ICC = 150mA, PDISS = 1.2W, TAMB = 85°C
TAMB = +85°C
Power Supply (50)
Device Voltage
Operating Current Range
100
8.5
V
On pin 13, ICC = 150mA
9.3
V
On pin 13, ICC = 180mA
180
200
mA
T = 25°C, ICC = 180mA, RC = 14.3,
75 System
Overall (75)
Frequency Range
DC
3000
MHz
Gain
15.0
dB
Noise Figure
4.8
dB
2 of 11
Actual current determined by VCC and RC
3dB Bandwidth
From 100MHz to 1000MHz
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120511
RF2317
Parameter
Min.
Specification
Typ.
Max.
Unit
T = 25°C, ICC = 180mA, RC = 14.3,
75 System
Overall (75) (continued)
Input VSWR
1.3:1
Output VSWR
1.8:1
Output IP3
+37
Output IP2
Output P1dB
Reverse Isolation
Appropriate values for the DC blocking capacitors and bias inductor are required to maintain
this VSWR at the intended operating frequency
range.
+49
dBm
At 100MHz
+43
dBm
At 500MHz
+38
dBm
At 900MHz
+58
dBm
F1 = 400MHz, F2 = 500MHz, FOUT = 100MHz
+22
dBm
At 100MHz
+22
dBm
At 500MHz
+21
dBm
At 900MHz
19
dB
10dBmV per channel, flat, at the input of the
amplifier; ICC = 150mA, VCC = 10.4V
133 Channels
XMOD
CTB
CSO + 1.25MHz
CSO - 1.25MHz
<-75
dBc
At 55.25MHz
<-75
dBc
At 331.25MHz
<-75
dBc
At 547.25MHz
<-75
dBc
At 853.25MHz
-85
dBc
At 55.25MHz
-85
dBc
At 331.25MHz
-84
dBc
At 547.25MHz
-83
dBc
At 853.25MHz
-90
dBc
At 55.25MHz
-72
dBc
At 331.25MHz
-69
dBc
At 853.25MHz
-64
dBc
At 547.25MHz
-63
dBc
At 55.25MHz
-65
dBc
At 331.25MHz
-70
dBc
At 547.25MHz
-90
dBc
CTB
CSO + 1.25MHz
DS120511
At 853.25MHz
10dBmV per channel, flat, at the input of the
amplifier; ICC = 180mA, VCC = 11.4V
133 Channels
XMOD
Condition
<-75
dBc
At 55.25MHz
<-75
dBc
At 331.25MHz
<-75
dBc
At 547.25MHz
<-75
dBc
At 853.25MHz
-89
dBc
At 55.25MHz
-86
dBc
At 331.25MHz
-86
dBc
At 547.25MHz
-84
dBc
At 853.25MHz
-89
dBc
At 55.25MHz
-74
dBc
At 331.25MHz
-69
dBc
At 853.25MHz
-62
dBc
At 547.25MHz
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
3 of 11
RF2317
CSO - 1.25MHz
-63
dBc
At 55.25MHz
-65
dBc
At 331.25MHz
-71
dBc
At 547.25MHz
-91
dBc
At 853.25MHz
Power Supply (75)
Device Voltage
Operating Current Range
4 of 11
100
8.3
V
On pin 13, ICC = 150mA
8.9
V
On pin 13, ICC = 180mA
180
200
mA
Actual current determined by VCC and RC
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120511
RF2317
Pin Names and Descriptions
Pin
1
2
Name
NC
GND
3
4
GND
RF IN
5
6
7
8
9
10
11
12
13
NC
GND
GND
NC
NC
GND
GND
NC
RF OUT
14
15
16
GND
GND
NC
Description
Interface Schematic
This pin is internally not connected.
Ground connection. Keep traces physically short and connect immediately
to ground plane for best performance. Each ground pin should have a via
to the ground plane.
Same as pin 2.
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor,
suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the
internal feedback loop and cause temperature instability.
This pin is internally not connected.
Same as pin 2.
Same as pin 2.
This pin is internally not connected.
This pin is internally not connected.
Same as pin 2.
Same as pin 2.
This pin is internally not connected.
RF output and bias pin. Because DC is present on this pin, a DC blocking
capacitor, suitable for the frequency of operation, should be used in most
applications. For biasing, an RF choke in series with a resistor is needed.
The DC voltage on this pin is typically 8.3V with a current of 150mA (for
75 board). See device voltage versus device current plot. In lower power
applications the value of RC can be increased to lower the current and VD
on this pin.
RF OUT
RF IN
Same as pin 2.
Same as pin 2.
This pin is internally not connected.
Package Drawing
-A-
0.020
REF
0.157
0.150
0.020
0.014
0.008
0.004
0.393
0.386
0.034 REF
0.068
0.064
0.068
0.053
0.244
0.229
8° MAX
0° MIN
0.034
0.016
DS120511
0.009
0.007
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 11
RF2317
Application Schematic
5MHz to 50MHz Reverse Path
VCC
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
3.9 H
18 nF
RF IN
10 nF
11 
18 nF
RF OUT
NOTES:
Gain Flatness <0.5 dB
Input and Output Return Loss >20 dB in 75  system
Evaluation Board Schematic - 50
(Download Bill of Materials from www.rfmd.com.)
P1
P1-1
J1
RF IN
1
VCC
2
GND
3
NC
50  strip
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
RC = 10.2 
VCC
C1
1 nF
R1
51 
R2
51 
L1
3.3 H
R3
51 
R4
51 
R5
51 
50  strip
C2
1 nF
C3
220 pF
C4
100 nF
C5
1 F
J2
RF OUT
2317400 Rev -
6 of 11
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DS120511
RF2317
Evaluation Board Schematic - 75
VCC
C3
0.1 uF
P1
P1-1
1
VCC
2
GND
3
J1
RF IN
1
NC
75  strip
C1
1 nF
RC = 14.3 
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
R4
56 
R1
56 
R2
56 
L1
1000 nH
R3
56 
75  strip
C2
1 nF
J2
RF OUT
2317401 Rev -
DS120511
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7 of 11
RF2317
Evaluation Board Layout - 50
2.0” x 2.0”
Board Thickness 0.031”, Board Material FR-4
Evaluation Board Layout - 75
1.40” x 1.40”
Board Thickness 0.062”, Board Material FR-4
8 of 11
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DS120511
RF2317
75,
ICC = ICC
180mA,
Temp
= +25°C
75 Ohms
180mA
Temp
25C
0.
4
4.0
5.0
1.0
0.8
2.0
3.0
4.0
5.0
0.2
0.2
10.0
10.0
4.0
5.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0
10.0
3.0
4.0
5.0
2.0
1.0
0.8
0.6
0.4
0.2
10.0
-10.0
-10.0
.4
.0
-2
S[2,2]
-1.0
.0
-2
-1.0
-0.8
-0.
6
Swp Min
0.05GHz
-0
-0.8
-3
.0
S[2,2]
S[1,1]
-0.
6
-4.
0
-5.0
.4
-0
-0.2
-3
.0
S[1,1]
-4.
0
-5.0
0
0.6
0
3.
-0.2
DS120511
Swp Max
2GHz
2.
0
0.8
1.0
Swp Max
2GHz
0.
4
0 .6
75,
ICC =ICC
150mA,
Temp
= +25°C
75
Ohms
150mA
Temp
25C
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
Swp Min
0.05GHz
9 of 11
RF2317
CSO (L) versus Channel Frequency Across Temperature
CSO (U) versus Channel Frequency Across Temperature
(133 Channels, ICC = 180 mA)
100.00
(133 Channels, ICC = 180 mA)
100.00
90.00
90.00
80.00
70.00
CSO (dBc)
CSO (dBc)
80.00
70.00
60.00
60.00
50.00
40.00
30.00
50.00
40.00
-40°C
20.00
-40°C
+25°C
+25°C
10.00
+85°C
+85°C
30.00
55.25
0.00
155.25
255.25
355.25
455.25
555.25
655.25
755.25
855.25
Channel Frequency (MHz)
55.25
155.25
255.25
355.25
455.25
555.25
655.25
755.25
855.25
Channel Frequency (MHz)
CTB versus Channel Frequency Across Temperature
(133 Channels, ICC = 180 mA)
91.00
-40°C
90.00
+25°C
+85°C
89.00
CTB (dBc)
88.00
87.00
86.00
85.00
84.00
83.00
82.00
81.00
55.25
155.25
255.25
355.25
455.25
555.25
655.25
755.25
855.25
Channel Frequency (MHz)
10 of 11
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120511
RF2317
Gain versus Frequency
75 , ICC = 180 mA
7.0
16.0
6.0
15.0
5.0
Noise Figure (dB)
Gain (dB)
Noise Figure versus Frequency Over Temperature
75, ICC=180mA
17.0
14.0
13.0
12.0
4.0
3.0
2.0
-40°C
11.0
-40°C
1.0
+25°C
+25°C
+85°C
+85°C
10.0
0.0
100.0
200.0
300.0
400.0
500.0
600.0
700.0
800.0
900.0
1000.0
100.0
200.0
300.0
400.0
Frequency (MHz)
Device Voltage versus Current
600.0
700.0
800.0
900.0
1000.0
CSO (L) versus Channel Frequency Across Temperature
75 
10.0
500.0
Frequency (MHz)
(133 Channels, ICC = 150 mA)
100.00
90.00
9.0
8.0
CSO (dBc)
Device Voltage (V)
80.00
7.0
70.00
60.00
50.00
6.0
-40°C
40.00
+25°C
+85°C
5.0
30.00
0.0
25.0
50.0
75.0
100.0
125.0
150.0
175.0
200.0
55.25
155.25
Current (mA)
355.25
455.25
555.25
655.25
755.25
855.25
Channel Frequency (MHz)
CSO (U) versus Channel Frequency Across Temperature
CTB versus Channel Frequency Across Temperature
(133 Channels, ICC = 150 mA)
100.00
255.25
(133 Channels, ICC = 150 mA)
89.00
-40°C
+25°C
88.00
90.00
+85°C
87.00
80.00
CTB (dBc)
CSO (dBc)
86.00
70.00
60.00
85.00
84.00
50.00
83.00
-40°C
40.00
+25°C
82.00
+85°C
30.00
55.3
81.00
155.3
255.3
355.3
455.3
555.3
Channel Frequency (MHz)
DS120511
655.3
755.3
855.3
55.25
155.25
255.25
355.25
455.25
555.25
655.25
755.25
855.25
Channel Frequency (MHz)
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 11