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FDB8447L 40V N-Channel PowerTrench MOSFET
FDB8447L 40V N-Channel PowerTrench® MOSFET 40V, 50A, 8.5mΩ Features General Description Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. Max rDS(on) = 11mΩ at VGS = 4.5V, ID = 11A Fast Switching RoHS Compliant Application Inverter Power Supplies D D G G S TO-263AB S FDB Series MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC= 25°C V -Continuous (Silicon limited) TC= 25°C (Note 1) 66 TA= 25°C (Note 1a) 15 A 100 (Note 3) Power Dissipation TC= 25°C Power Dissipation TJ, TSTG ±20 50 -Pulsed PD Units V -Continuous Drain-Source Avalanche Energy EAS Ratings 40 153 60 (Note 1a) Operating and Storage Junction Temperature Range 3.1 –55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 2.1 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDB8447L Device FDB8447L ©2007 Fairchild Semiconductor Corporation FDB8447L Rev.C Package TO-263AB 1 Reel Size 330mm Tape Width 24mm Quantity 800 units www.fairchildsemi.com FDB8447L 40V N-Channel PowerTrench® MOSFET February 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 40 V ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V ±100 nA 3 V 35 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -5 VGS = 10V, ID = 14A 7.4 8.5 rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 11A 8.7 11.0 VGS = 10V, ID = 14A, TJ=125°C 10.8 12.4 gFS Forward Transconductance VDS = 5V, ID = 14A 1 1.9 mV/°C 58 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 1970 2620 pF 250 335 pF 150 225 pF Ω 1.0 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time 11 20 ns 6 12 td(off) Turn-Off Delay Time ns 28 45 tf ns Fall Time 4 10 ns Qg(TOT) Total Gate Charge, VGS = 10V 37 52 nC Qg(TOT) Total Gate Charge, VGS = 5V 20 28 nC Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 20V, ID = 14A VGS = 10V, RGEN = 6Ω VDD =20V, ID = 14A VGS = 10V 6 nC 7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 14A (Note 2) IF = 14A, di/dt = 100A/µs 0.8 1.2 V 28 42 ns 24 36 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper b. 62.5°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V. FDB8447L Rev.C 2 www.fairchildsemi.com FDB8447L 40V N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted VGS = 10V 80 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 4.5V VGS = 4V 60 VGS = 3.5V 40 20 0 VGS = 3V 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 100 4 VGS = 3V 2.5 VGS = 3.5V 2.0 1.5 1.0 0.5 40 60 80 100 25 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 ID, DRAIN CURRENT(A) ID = 14A VGS = 10V 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 80 VDD = 5V 60 40 TJ = 25oC 20 TJ = 125oC 1 TJ = -55oC 2 3 VGS, GATE TO SOURCE VOLTAGE (V) ID = 7A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 20 15 TJ = 125oC 10 TJ = 25oC 5 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 100 ID, DRAIN CURRENT (A) 0 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 100 VGS = 0V 10 1 TJ = 25oC 0.1 TJ = 125oC TJ = -55oC 0.01 0.001 0.0 4 Figure 5. Transfer Characteristics FDB8447L Rev.C PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 10V Figure 1. On Region Characteristics 0 VGS = 4V VGS = 4.5V 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDB8447L 40V N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 3000 ID = 14A VDD = 10V 8 Ciss CAPACITANCE (pF) VDD = 20V 6 VDD = 30V 4 2 0 1000 Coss Crss f = 1MHz VGS = 0V 100 0 10 20 30 Qg, GATE CHARGE(nC) 50 0.1 40 Figure 7. Gate Charge Characteristics 40 Figure 8. Capacitance vs Drain to Source Voltage 80 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 TJ = 25oC TJ = 125oC 60 VGS = 10V 40 Limited by Package VGS = 4.5V 20 o RθJC = 2.1 C/W 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 0 100 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100us 10 0.1 0.1 1ms 1 10ms 100ms TC = 25oC 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDB8447L Rev.C 100 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 SINGLE PULSE TJ = MAX RATED 75 o 300 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 50 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 1 25 1000 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 – T c --------------------125 Tc = 25oC 100 SINGLE PULSE 50 -4 10 -3 10 -2 -1 10 10 t, PULSE WIDTH (s) 0 10 1 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDB8447L 40V N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.1 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.05 -4 10 -3 10 -2 -1 10 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDB8447L Rev.C 5 www.fairchildsemi.com FDB8447L 40V N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ CTL™ Current Transfer Logic™ DOME™ E2CMOS™ EcoSPARK™ EnSigna™ FACT Quiet Series™ FACT® FAST® FASTr™ FPS™ FRFET® GlobalOptoisolator™ GTO™ HiSeC™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ MICROCOUPLER™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power220® Power247® PowerEdge™ PowerSaver™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ ScalarPump™ SMART START™ SPM™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TCM™ The Power Franchise® ™ TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyWire™ TruTranslation™ µSerDes™ UHC® UniFET™ VCX™ Wire™ tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. 6 ©2007 Fairchild Semiconductor Corporation Rev. I23 www.fairchildsemi.com FDB8447L 40V N-Channel PowerTrench® MOSFET tm