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FDS8447 Single N-Channel PowerTrench MOSFET
FDS8447 Single N-Channel PowerTrench® MOSFET tm 40V, 12.8A, 10.5mΩ Features General Description Max rDS(on) = 10.5mΩ at VGS = 10V, ID = 12.8A This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 12.3mΩ at VGS = 4.5V, ID = 11.4A Low gate charge High performance trench technology for extremely low rDS(on) Applications High power and current handling capability DC - DC conversion RoHS compliant D D D D G SO-8 S Pin 1 S S D 5 4 G D 6 3 S D 7 2 S D 8 1 S FDS8447 Single N-Channel PowerTrench® MOSFET November 2006 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed EAS TJ, TSTG Units V ±20 V 12.8 A 50 Drain-Source Avalanche Energy Power Dissipation for Single Operation PD Ratings 40 (Note 3) 150 (Note 1a) 2.5 (Note 1b) 1 Operating and Storage Junction Temperature Range mJ W °C -55 to 150 Thermal Characteristics RθJA Thermal Resistance-Single operation, Junction to Ambient RθJC Thermal Resistance, Junction to Case (Note 1a) 50 (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking FDS8447 Device FDS8447 ©2006 Fairchild Semiconductor Corporation FDS8447 Rev. B Reel Size 13’’ 1 Tape Width 12mm Quantity 2500 units www.fairchildsemi.com www.BDTIC.com/FAIRCHILD Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current 40 ID = 250µA, referenced to 25°C V mV/°C 34 VDS = 32V, VGS = 0V TJ = 55°C VGS = ±20V, VDS = 0V 1 µA 10 µA ±100 nA 3 V On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C VGS = 10V, ID = 12.8A 9 10.5 rDS(on) Drain to Source On Resistance VGS = 4.5V, ID = 11.4A 10 12.3 VGS = 10V, ID = 12.8A,TJ = 125°C 13 15 Forward Transconductance gFS 1 1.8 -5 VDS = 10V, ID = 12.8A mV/°C mΩ S 75.3 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz 2000 2600 pF 250 350 pF 150 250 pF Ω f = 1MHz 1.3 VDD = 20V, ID = 12.8A VGS = 10V, RGEN = 4.5Ω 11 20 ns 14 25 ns 27 42 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 7 14 ns Qg Total Gate Charge at VGS = 10V 35 49 nC 19 27 nC Qg Total Gate Charge at VGS = 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller”Charge VDS = 20V, ID = 12.8A, 6 nC 7 nC FDS8447 Single N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Drain-Source Diode Characteristics and Maximum Ratings VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 12.8A (note 2) trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 12.8A, diF/dt = 100A/µs 0.84 1.2 V 19 29 ns 9.5 19 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 125°C/W when mounted on a minimum pad . Scale 1:1 on letter size paper 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 10A, VDD = 40V, VGS = 10V. FDS8447 Rev.B 2 www.fairchildsemi.com www.BDTIC.com/FAIRCHILD 50 3.0 40 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS =10V VGS = 4.5V 30 VGS = 3.5V 20 VGS = 3V 10 0 0.0 0.4 0.8 1.2 1.6 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.2 1.0 0.8 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 Figure 3. Normalized On Resistance vs Junction Temperature 0.5 0 10 20 30 ID, DRAIN CURRENT(A) 40 50 ID = 12.8A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 20 TJ = 125oC 15 TJ = 25oC 10 5 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 50 ID, DRAIN CURRENT (A) VGS = 10V 25 1.4 0.6 -50 1.0 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage ID = 12.8A VGS = 10V 1.6 VGS = 3.5V VGS = 4.5V 1.5 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 2.0 2.0 Figure 1. On Region Characteristics VGS = 3V 2.5 FDS8447 Single N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 40 VDS = 5V 30 TJ = 150oC 20 TJ = 25oC 10 TJ 0 1.0 = -55oC 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 Figure 5. Transfer Characteristics FDS8447 Rev.B VGS = 0V 10 1 0.1 0.01 1E-3 0.0 TJ = 150oC TJ = 25oC TJ = -55oC 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com www.BDTIC.com/FAIRCHILD 10 VDD = 10V 8 Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 4 10 VDD = 20V 6 VDD = 30V 4 2 0 3 10 Coss 2 10 f = 1MHz VGS = 0V 1 0 10 20 30 Qg, GATE CHARGE(nC) 10 0.1 40 Figure 7. Gate Charge Characteristics 15 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 40 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 16 13 TJ = 25oC 10 7 TJ = 125oC 4 12 VGS = 10V 9 VGS = 4.5V 6 3 o RθJA = 50 C/W 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 0 25 100 P(PK), PEAK TRANSIENT POWER (W) 100us 1ms 0.1 10ms 100ms 1s SINGLE PULSE TJ = MAX RATED 10s TA = 25OC 0.01 0.01 0.1 DC 1 10 100 200 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDS8447 Rev.B 100 125 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 75 o 100 1 50 TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss FDS8447 Single N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2000 1000 VGS = 10V 100 SINGLE PULSE RθJA = 125°C/W TA = 25°C 10 SINGLE PULSE 1 -4 10 -3 10 -2 -1 0 1 10 10 10 10 t, PULSE WIDTH (s) 2 10 3 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com www.BDTIC.com/FAIRCHILD NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 P(PK) 0.01 t1 t2 1E-3 SINGLE PULSE RθJA(t) = r(t)*RθJA RθJA = 125oC/W TJ-TA =P*RθJA DUTY FACTOR: D = t1/t2 0.0002 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDS8447 Rev.B 5 www.fairchildsemi.com FDS8447 Single N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted www.BDTIC.com/FAIRCHILD FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. www.BDTIC.com/FAIRCHILD Rev. I22