SCHOTTKY BARRIER DIODE LRB521CS-30T5G S-LRB521CS-30T5G LESHAN RADIO COMPANY, LTD.

LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
zApplications
LRB521CS-30T5G
S-LRB521CS-30T5G
Low current rectification
zFeatures
Extremelysmall surface mounting type. (SOD923)
Low VF
High reliability.
We declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable.
1
2
SOD923
zConstruction
Silicon epitaxial planar
1
Cathode
2
Anode
DEVICE MARKING AND ORDERING INFORMATION
Device
LRB521CS-30T5G
S-LRB521CS-30T5G
Marking
Shipping
F
8000/Tape&Reel
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectifierd forward current
Forward current surge peak　（60Hz・1cyc）
Junction temperature
Storage temperature
Limits
30
100
500
125
-40 to +125
Symbol
VR
Io
IFSM
Tj
Tstg
Unit
V
mA
mA
℃
℃
zElectrical characteristic (Ta=25°C)
Parameter
Forward vpltage
Forward vpltage
Reverse current
Symbol
VF
VF
Min.
-
Typ.
-
Max.
0.35
IR
-
-
Conditions
0.4
Unit
V
V
IF=20mA
10
µA
VR=10V
IF=10mA
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
LRB521CS-30T5G , S-LRB521CS-30T5G
zElectrical characteristic curves
100
10000
1000
f=1MHｚ
Ta=75℃
Ta=-25℃
1
Ta=25℃
0.1
0.01
Ta=75℃
100
Ta=25℃
10
1
Ta=-25℃
0.1
0.001
0.01
0
100
200
300
400
500
600
10
0
30
280
270
260
AVE:270.2mV
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
30
Ta=25℃
IF=10mA
n=30pcs
Ta=25℃
VR=10V
n=30pcs
25
REVERSE CURRENT:IR(uA)
Ta=25℃
f=1MHz
VR=0V
n=10pcs
19
20
15
10
AVE:2.017uA
5
18
17
16
15
14
13
AVE:17.34pF
12
11
10
0
250
VF DISPERSION MAP
IR DISPERSION MAP
20
Ct DISPERSION MAP
Ifsm
15
8.3ms
10
5
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
1cyc
10
PEAK SURGE
FORWARD CURRENT:IFSM(A)
FORWARD VOLTAGE:VF(mV)
20
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
300
290
10
1
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
1000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
100
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(mA)
Ta=125℃
Ta=125℃
Ifsm
8.3ms 8.3ms
1cyc
5
Ifsm
t
5
AVE:3.90A
0
0
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
0.1
1000
1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
IFSM DISRESION MAP
Rth(j-a)
Mounted on epoxy board
100
IF=100mA
IM=10mA
1ms
D=1/2
DC
0.06
Sin(θ＝180)
0.04
REVERSE POWER
DISSIPATION:PR (W)
0.08
0.08
Rth(j-c)
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
10
D=1/2
0.04
DC
Sin(θ＝180)
0.02
0.02
time
0.06
300us
10
0.001
0
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0
0.1
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0.2
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
LRB521CS-30T5G , S-LRB521CS-30T5G
Electricalcharacteristiccurves(Ta=25OC)
0.3
0A
0V
Io
t
DC
0.2
T
VR
D=t/T
VR=15V
Tj=125℃
D=1/2
0.1
Sin(θ＝180)
0
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
125
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.3
0A
0V
0.2
Io
t
DC
T
VR
D=t/T
VR=15V
Tj=125℃
D=1/2
0.1
Sin(θ＝180)
0
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
LRB521CS-30T5G , S-LRB521CS-30T5G
SOD -923
D
−X−
−Y−
MILLIMETERS
DIM MIN NOM MAX
A 0.34 0.39 0.43
b 0.15 0.20 0.25
c 0.07 0.12 0.17
D 0.75 0.80 0.85
E 0.55 0.60 0.65
HE 0.95 1.00 1.05
L 0.05 0.10 0.15
E
1
b
2
2X
0.08 (0.0032) X Y
A
c
INCHES
MIN NOM
0.013 0.015
0.006 0.008
0.003 0.005
0.030 0.031
0.022 0.024
0.037 0.039
0.002 0.004
MAX
0.017
0.010
0.007
0.033
0.026
0.041
0.006
L
HE
SOLDERING FOOTPRINT*
0.90
0.40
0.30
DIMENSIONS: MILLIMETERS
Rev.O 4/4