Dual General Purpose Transistors NPN Silicon LMBT2222ADW1T1G S-LMBT2222ADW1T1G

LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Silicon
We declare that material of product compliance
with ROHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable.
LMBT2222ADW1T1G
S-LMBT2222ADW1T1G
6
5
4
1
MAXIMUM RATINGS
2
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
40
Vdc
Collector–Base Voltage
VCBO
75
Vdc
Emitter–Base Voltage
VEBO
6.0
Vdc
IC
600
mAdc
Symbol
Max
Unit
PD
150
mW
RJA
833
°C/W
TJ, Tstg
–55 to +150
°C
Collector Current – Continuous
3
SC-88
(3)
(2)
(1)
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
Q1
(4)
Q2
(5)
(6)
ORDERING INFORMATION
Device
LMBT2222ADW1T1G
S-LMBT2222ADW1T1G
LMBT2222ADW1T3G
S-LMBT2222ADW1T3G
Marking
Shipping
XX
3000/Tape & Reel
XX
10000/Tape & Reel
Rev.O 1/7
LESHAN RADIO COMPANY, LTD.
LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
–
Vdc
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
75
–
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
6.0
–
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
ICEX
–
10
nAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
ICBO
–
–
0.01
10
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
–
100
nAdc
IBL
–
20
nAdc
35
50
75
35
100
50
40
–
–
–
–
300
–
–
–
–
0.3
1.0
0.6
–
1.2
2.0
OFF CHARACTERISTICS
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 2)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 2)
hFE
Collector–Emitter Saturation Voltage (Note 2)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Base–Emitter Saturation Voltage (Note 2)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
–
Vdc
Vdc
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
Rev.O 2/7
LESHAN RADIO COMPANY, LTD.
LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (Note 3)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
300
–
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
–
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
–
25
pF
2.0
0.25
8.0
1.25
–
–
8.0
4.0
50
75
300
375
5.0
25
35
200
–
150
–
4.0
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
rb, Cc
Noise Figure
(IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
kΩ
X 10–4
–
mhos
ps
NF
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 30 Vdc, VBE(off) = –0.5
0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
–
10
tr
–
25
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
–
225
tf
–
60
ns
ns
3. fT is defined as the frequency at which |hfe| extrapolates to unity.
Rev.O 3/7
LESHAN RADIO COMPANY, LTD.
LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G
hFE , DC CURRENT GAIN
1000
700
500
TJ = 125°C
300
200
25°C
100
70
50
-55°C
30
VCE = 1.0 V
VCE = 10 V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500 700 1.0 k
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 2. Collector Saturation Region
200
500
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
t′s = ts - 1/8 tf
100
70
50
tf
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
300
t, TIME (ns)
t, TIME (ns)
100
70
50
10
200 300
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 3. Turn–On Time
500
5.0 7.0 10
20 30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
300
Figure 4. Turn–Off Time
Rev.O 4/7
500
LESHAN RADIO COMPANY, LTD.
LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G
10
10
6.0
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
100 mA, RS = 2.0 kW
50 mA, RS = 4.0 kW
8.0
NF, NOISE FIGURE (dB)
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
4.0
2.0
0.5 1.0 2.0
5.0 10
20
4.0
5.0 k 10 k 20 k
50 k 100 k
Figure 6. Source Resistance Effects
7.0
5.0
Ccb
3.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30
50
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure 5. Frequency Effects
10
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
Figure 7. Capacitances
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 8. Current–Gain Bandwidth Product
1.3
1
1.2
IC/IB = 10
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
500 1.0 k 2.0 k
RS, SOURCE RESISTANCE (OHMS)
Ceb
0.2 0.3
100 200
f, FREQUENCY (kHz)
20
2.0
0.1
0
50
50 100
30
CAPACITANCE (pF)
6.0
2.0
0
0.01 0.02 0.05 0.1 0.2
150°C
0.1
0.01
IC = 50 mA
100 mA
500 mA
1.0 mA
−55°C
25°C
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 10
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Rev.O 5/7
LESHAN RADIO COMPANY, LTD.
1.2
1.1
+0.5
VCE = 1 V
0
0.9
COEFFICIENT (mV/ °C)
1.0
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.2
RqVC for VCE(sat)
-0.5
-1.0
-1.5
RqVB for VBE
-2.0
0.3
0.001
0.01
0.1
-2.5
1
0.1 0.2
0.5
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Voltage vs. Collector
Current
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
10
10 ms
100 ms
1
Thermal Limit
IC (A)
VBE(on), BASE−EMITTER VOLTAGE (V)
LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G
1 ms
1s
0.1
0.01
0.001
Single Pulse Test
@ TA = 25°C
0.01
0.1
1
10
100
VCE (Vdc)
Figure 13. Safe Operating Area
Rev.O 6/7
500
LESHAN RADIO COMPANY, LTD.
LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G
SOT–363/SC–88
A
G
V
6
5
4
1
2
3
S
DIM
A
B
C
D
G
H
J
K
N
S
V
–B–
D 6 PL
0.2 (0.008)
M
B
M
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
0.012
0.016
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
0.30
0.40
N
J
C
H
K
Rev.O 7/7