SOD-523 Plastic-Encapsulate Diodes CESDB5V0D5

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
CESDB5V0D5
Bi-direction ESD Protection Diode
DESCRIPTION
SOD-523
Designed to protect voltage sensitive electronic components from ESD and other
transients. Excellent clamping capability, low leakage, and fast response time provide
best in class protection on designs that are exposed to ESD.
The combination of small size, high level of ESD protection makes them a flexible
solution for applications such as Digital cameras,cellular phones, and MP3 Players. It
BDTIC
is designed to replace multiplayer varistors (MLV) in consumer equipments
applications such as mobile phone, notebook, PAD, STB, LCD TV etc.
FEATURES

Bi-directional ESD protection of one line

Fast response time

Reverse stand−off voltage: 5V

JESD22-A114-B ESD Rating of class 3B per human

Low reverse clamping voltage

Low leakage current

Excellent package:1.2mm×0.8mm×0.6mm
body model

IEC 61000-4-2 Level 4 ESD protection
APPLICATIONS

Computers and peripherals

Portable electronics

Digital Cameras

Mp3 Players

Audio and video equipment

Other electronics equipments communi-

Cellular handsets and accessories
cation systems
MARKING
B5 = Device code
Solid dot = Green molding compound device,if
none, the normal device
Front side
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CESDB5V0D5
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
IEC 61000-4-2 ESD Voltage
Air Model
Contact Model
JESD22-A114-B ESD Voltage
Per Human Body Model
ESD Voltage
VESD(1)
±25
±16
kV
±0.4
(2)
112
W
(2)
8
A
PPP
Peak Pulse Current
Unit
±25
Machine Model
Peak Pulse Power
Limit
IPP
Lead Solder Temperature − Maximum (10 Second Duration)
TL
260
℃
Junction Temperature
Tj
150
℃
BDTIC
Storage Temperature Range
Tstg
-55 ~ +150
℃
(1).Device stressed with ten non-repetitive ESD pulses.
(2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
ESD standards compliance
IEC61000-4-2 Standard
JESD22-A114-B Standard
Contact Discharge
Air Discharge
ESD Class
Human Body Discharge V
Level
Test Voltage kV
Level
Test Voltage kV
0
0～249
1
2
1
2
2
4
2
4
1A
1B
1C
250～499
500～999
1000～1999
3
6
3
8
4
8
4
15
2
3A
3B
2000～3999
4000～7999
8000～15999
ESD pulse waveform according to IEC61000-4-2
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8/20μs pulse waveform according to IEC 61000-4-5
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CESDB5V0D5
ELECTRICAL PARAMETER
Symbol
Parameter
VC
Clamping Voltage @ IPP
IPP
Peak Pulse Current
VBR
Breakdown Voltage @ IT
IT
Test Current
IR
Reverse Leakage Current @ VRWM
VRWM
Reverse Standoff Voltage
V-I characteristics for a Bi-directional TVS
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
BDTIC
Parameter
Reverse stand off voltage
Reverse leakage current
Breakdown voltage
Clamping voltage
Junction capacitance
Symbol
Test conditions
Min
Typ
（1）
VRWM
IR
V(BR)
（2）
VC
CJ
VRWM=5V
IT=1mA
5.8
IPP=8A
VR=0V,f=1MHz
27
Max
Unit
5
V
1
μA
8.8
V
14
V
pF
(1).Other voltages available upon request.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5
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CESDB5V0D5
TYPICAL CHARACTERISTICS
Reverse
VC ——
Characteristics
100
IPP
16
Ta=25℃
Pulsed
tp=8/20us
75
25
CLAMPING VOLTAGE VC (V)
Ta =25℃
REVERSE CURRENT IR
50
Ta =100℃
(mA)
14
0
-25
-50
12
10
8
6
-75
BDTIC
-100
-8
-6
-4
-2
0
2
REVERSE VOLTAGE
4
VR
6
8
4
10
1
2
3
4
5
6
7
8
REVERSE PEAK PULSE CURRENT IPP (A)
(V)
Capacitance Characteristics
30
Ta=25℃
JUNCTION CAPACITANCE
CJ (pF)
f=1MHz
25
20
15
10
0
1
2
3
REVERSE VOLTAGE
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4
5
VR
6
(V)
4
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CESDB5V0D5
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PACKAGE OUTLINE AND PAD LAYOUT INFORMATION
Dimensions In Millimeters
Min
Max
0.510
0.770
0.500
0.700
0.250
0.350
0.080
0.150
0.750
0.850
1.100
1.300
1.500
1.700
0.200 REF
0.010
0.070
7° REF
Symbol
Dimensions In Inches
Min
Max
0.020
0.031
0.020
0.028
0.010
0.014
0.003
0.006
0.030
0.033
0.043
0.051
0.059
0.067
0.008 REF
0.001
0.003
7° REF
BDTIC
A
A1
b
c
D
E
E1
E2
L
θ
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CESDB5V0D5
TAPE AND REEL INFORMATION
BDTIC
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