BDTIC www.BDTIC.com/infineon Application Guide RF & Protection Devices Mobile Communication

BDTIC
Application Guide RF & Protection Devices
Mobile Communication
Edition 2014
www.infineon.com/rfandprotectiondevices
www.BDTIC.com/infineon
BDTIC
Edition 2014-05-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
www.BDTIC.com/infineon
RF and Protection Devices
Application Guide for Mobile Communication
Infineon Technologies
A Leading Company in RF and Protection Devices
Infineon Technologies focuses on the three central challenges facing modern society: Energy Efficiency,
Mobility and Security and offers semiconductors and system solutions for industrial/consumer electronics,
automotive electronics, chip card and security applications.
Infineon’s products stand out for their reliability, their quality excellence and their innovative and leading-edge
technology in analog and mixed signal, RF and power, as well as embedded control.
With its technologies and design expertise, Infineon is the market leader in its focused segments. Infineon has
BDTIC
more than 30 years of experience in developing RF products for numerous applications and always leads in the
market with high performance, yet cost effective products. You can visit our website www.infineon.com to learn
more about the broad product portfolio of Infineon Technologies.
The Infineon business unit - RF and Protection Devices (RPD) - has evolved over the years from a supplier of
standard RF discrete components like transistors and diodes to a more advanced portfolio of state-of-the-art,
innovative and differentiated products including application specific MMICs, Silicon Microphones (Si-Mic) and
ESD protection components. Please visit our website www.infineon.com/rfandprotectiondevices to learn more
about Infineon’s latest RF, Protection and Si-Mic products for your applications.
Infineon’s application guides consisting of four different brochures are an easy-to-use tool primarily meant for
engineers to guide them to the right device for their system, efficiently. These application guides are updated
frequently to include latest applications and trends. Each brochure focuses on a market segment that we
support:
1. Application Guide for Mobile Communication: www.infineon.com/rpd_appguide_mobile
2. Application Guide for Industrial Applications:
www.infineon.com/rpd_appguide_industrial
3. Application Guide for Protection:
www.infineon.com/rpd_appguide_protection
Our application experts worldwide are always ready to support you in designing your systems with our devices.
Please contact Infineon’s Regional Offices or one of Infineon Worldwide Distribution Partners in your area to get
all the support you might need.
Kind Regards,
Dr. Heinrich Heiss
Dr. Chih-I Lin
Director Technical Marketing
& Application Engineering RPD
Group Leader RF Technical Marketing
& Application Engineering RPD
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3
RF and Protection Devices
Application Guide for Mobile Communication
INDEX
In f ine on Te ch no log ie s ................................................................................................................................... 3
1
Infineon’s RF and Protection Devices for Mobile Communication ............................................... 5
2
2.1
2.2
Low Noise Amplifiers for Cellular Phones ...................................................................................... 8
Multiband LNAs for 2G/3G/4G Modems ............................................................................................ 9
LNAs for 3.5 GHz TD-LTE Modems................................................................................................. 13
3
3.1
3.2
3.3
Main and Diversity Antenna Switches in Mobile Phones ............................................................ 14
Application Challenges of Antenna Switches in Modern Mobile Applications ................................... 15
Antenna Tuning Switches ................................................................................................................ 23
PIN Diode Switches ......................................................................................................................... 24
4
4.1
4.2
4.3
4.4
Global Navigation Satellite System ................................................................................................ 28
Key Features of GNSS Front-End Components .............................................................................. 30
System Challenges for Modern GNSS Reception in Mobile Devices ............................................... 31
Global Navigation Satellite System (GNSS) with Discrete RF Devices ............................................ 35
Global Navigation Satellite System (GNSS) with Integrated Front-End Modules ............................. 37
5
5.1
5.2
5.3
Wi-Fi Wireless LAN (WLAN, IEEE 802.11a/ac/b/g/n) ..................................................................... 39
Key Features of WLAN Front-End ................................................................................................... 40
Dual-Band (2.4–6.0 GHz) WLAN (IEEE 802.11a/b/g/n) Front-End .................................................. 42
MIMO Configurations for WLAN (IEEE 802.11b/g/n and IEEE 802.11a/n/ac) Applications .............. 46
6
6.1
6.2
6.3
6.4
FM Radio and Mobile TV.................................................................................................................. 59
FM Radio with Embedded Antenna ................................................................................................. 60
TV Reception in Mobile Phones ....................................................................................................... 62
TV Reception with Band Selection Switch ....................................................................................... 63
FM and TV Reception in Mobile Phones with Band Selection SP3T switch ..................................... 65
7
Near-Field Communication ............................................................................................................. 66
BDTIC
8
8.1
8.2
8.3
ESD and ESD/EMI Interface Protection .......................................................................................... 68
Interface Protection with Discrete TVS Protection Diodes ............................................................... 69
Interface Protection with Integrated ESD/EMI Devices .................................................................... 71
Reverse Polarity Protection (RPP) for USB Charger ....................................................................... 72
9
High-Speed Digital Interface Switching and Protection ............................................................... 73
Abbreviations ....................................................................................................................................................... 75
Alphanumerical List of Symbols ........................................................................................................................ 76
Package Information ........................................................................................................................................... 77
Support Material .................................................................................................................................................. 79
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4
Infineon_RPD_AppGuide_Mobile_Communication_2014_Final_ver1_NEW.pdf 3
06.04.2014 17:50:33
RF and Protection Devices
Application Guide for Mobile Communication
1
Infineon’s RF and Protection Devices for Mobile Communication
The largest market in terms of volumes and with highest number of applications on a single platform today is
that of mobile phones. More than 1.5 billion phones are being shipped in a year worldwide. The major wireless
functions in a mobile phone include primarily 2G/3G/4G cellular modem, wireless systems such as WLAN,
GNSS, broadcasting receivers, multiple SIM and NFC etc.
Towards to 4G LTE, the number of LTE bands explodes in the last few years. To the time being, there are in
total 43 LTE bands open up worldwide for the LTE system. According to ETSI TS 36 101 V11.8.0 (2014-03-27),
the following table shows the LTE band number with transmit/receive frequency range and their related duplex
BDTIC
mode. The note describes the deployment in various regions of each band:
Table 1
LTE Band Assignment
Band No.
Uplink Frequency
Range (MHz)
Downlink Frequency
Range (MHz)
Duplex
Mode
Note
1
1920 - 1980
2110 - 2170
FDD
EMEA, Japan
2
1850 - 1910
1930 - 1990
FDD
US PCS
3
1710 - 1785
1805 - 1880
FDD
GSM, DCS1800
4
1710 - 1755
2110 - 2155
FDD
US AWS
5
824 - 849
869 - 894
FDD
US GSM
6
830 - 840
875 - 885
FDD
N/A, ref. Bd.19
7
2500 - 2570
2620 - 2690
FDD
EMEA
8
880 - 915
925 - 960
FDD
GSM900
9
1749.9 - 1784.9
1844.9 - 1879.9
FDD
Japan 1700 Mhz
10
1710 - 1770
2110 - 2170
FDD
Extended AWS
11
1427.9 - 1452.9
1475.9 - 1500.9
FDD
Japan 1500 MHz
12
698 - 716
728 - 746
FDD
US C Spire+USCC-LTE
13
777 - 787
746 - 756
FDD
US VzW-LTE
14
788 - 798
758 - 768
FDD
US FCC Public Safety
15
Reserved
Reserved
FDD
16
Reserved
Reserved
FDD
17
704 - 716
734 - 746
FDD
18
815 - 830
860 - 875
FDD
19
830 - 845
875 - 890
FDD
US AT&T-LTE
20
832 - 862
791 - 821
FDD
EMEA
21
1447.9 - 1462.9
1495.9 - 1510.9
FDD
Japan
22
3410 - 3500
3510 - 3600
FDD
23
2000 - 2020
2180-2200
FDD
24
1626.5 - 1660.5
1525 - 1559
FDD
25
1850 - 1915
1930-1995
FDD
US AWS-G, Sprint-LTE
26
814 - 849
859-894
FDD
AWS-H
27
807 - 824
852-869
FDD
Sprint / Nextel iDEN
28
703 - 748
758-803
FDD
APAC 700MHz
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5
RF and Protection Devices
Application Guide for Mobile Communication
Table 1
LTE Band Assignment
Band No.
Uplink Frequency
Range (MHz)
Downlink Frequency
Range (MHz)
Duplex
Mode
29
N/A
717 - 728
FDD
Note
Dish Network by 2016
…
33
1900 -1920
TDD
34
2010 - 2025
TDD
35
1850 - 1910
TDD
36
1930 - 1990
TDD
37
1910 - 1930
TDD
38
2570 - 2620
TDD
Europe, TD-LTE
39
1880 - 1920
TDD
China Mobile TD-SCDMA
40
2300 - 2400
TDD
China Mobile TD-LTE
41
2496 – 2690
TDD
42
3400 - 3600
TDD
43
3600 - 3800
TDD
44
703 - 803
TDD
China Mobile TD-SCDMA
BDTIC
APAC 700MHz
With more and more LTE bands and wireless applications being integrated on a single platform, the trend of RF
components is towards:
- smaller ICs
- higher levels of integration
- increased number of bands and modes
- integration of multiple and new connectivity functions
As a result of coexistence of various wireless functions, cross function interference becomes much more
complicate. Using our extensive application know-how, knowledge about market trends and industry contacts,
all our products are designed to fit in their respective applications to meet industry standard specifications. This
adds to the simplicity of design for the system designer while it makes choosing the right device easy.
All applications are depicted with simple block diagrams to show the various building blocks, followed by a short
description. Infineon recommended parts for each application are tabulated together with the most important
performance characteristics. More detailed information on each product including datasheet, application
notes, new Spice model and S-parameter files, products and application brochures, sample kits etc. can
be found on Infineon’s website www.infineon.com/rfandprotectiondevices by clicking on the specific product
name.
Infineon offers most of the important building blocks for RF front-end systems. Our product portfolio addresses
the requirement on these high performance RF devices by offering RF transistors, RF MMICs, RF CMOS
switches, RF diodes, and ESD/EMI devices with optimal performance and low power consumption. Infineon
Technologies offers products for cellular modems, wireless functions, broadcasting receivers, ESD/EMI
interface devices, multi SIM applications, high speed switching and more. The following block diagrams illustrate
the product portfolio offered by Infineon for mobile devices including ESD/EMI protection devices.
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6
RF and Protection Devices
Application Guide for Mobile Communication
Mobile Connectivity RF
Radio Block
Cellular RF
Wi-Fi Antenna
2.4 GHz TX
Diplexer
Diplexer
2.4 GHz RX
BT
5 GHz TX
Main
Antenna
2.5G
WiFi/
WiFi/
Bluetooth
Bluetooth
5 GHz RX
GNSS Antenna
Multiband
Transceiver
GNSS
3G/4G
FM Antenna
Diversity
Antenna
BDTIC
TV Antenna
FM TX
FM RX
UHF
VHF 2
VHF 1
FM/ TV
radio
3G/4G
Overview of Infineon’s products for mobile devices
Overview of Infineon’s ESD protection devices
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7
RF and Protection Devices
Application Guide for Mobile Communication
2
Low Noise Amplifiers for Cellular Phones
The mobile technologies for smartphones have seen phenomenal growth in recent times. The data rate of
mobile devices has increased significantly over the evolution modern mobile technologies starting from the first
3G/3.5G technologies (UMTS & WCDMA, HSPA & HSPA+) to 4G LTE. The ability of 4G LTE to support
bandwidths up to 20 MHz and to have more spectral efficiency by using high order modulation methods like
QAM-64 is of particular importance as the demand for higher wireless data speeds continues to grow fast. LTEAdvanced can aggregate up to 5 carriers (up to 100 MHz) to increase user data rates and capacity for high
speed applications.
BDTIC
A block diagram of a 2G and 3G/4G modem (GSM/EDGE/UMTS/LTE) for smartphone RF front-end (RFFE) is
shown below. It consists of a broadband antenna, a band selecting antenna switch, 3G/4G duplexers, high/low
band power amplifiers, 3G/4G Low Noise Amplifiers (LNAs) and various Surface Acoustic Wave (SAW) filters.
Infineon Technologies is one of the leading companies with broad product portfolio to offer high performance RF
front-end components for various mobile and wireless applications by using industry standard silicon process.
For the mobile phone front-end, Infineon offers Monolithic Microwave Integrated Circuit (MMIC) SiGe LTE LNA
and LNA banks product family (Chapter 2), various RF CMOS primary and diversity antenna switches and
antenna tuning elements and Schottky diode for power detectors (Chapter 3).
Our SiGe MMIC LNAs and LNA banks with their excellent low noise figure enhance the sensitivity of the RF
modem by several dB and offer system layout flexibility by suppressing noise contribution from losses of signal
lines and from the SAW filters as well as the receiver.
ANT Switch
2G
Transceiver
IC
ANT
Power Detector
PA
Antenna Tuner
3G/4G
Transceiver
IC
Duplexer
LNA
SAW
Example block diagram of a 2G/3G/4G modem
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8
RF and Protection Devices
Application Guide for Mobile Communication
2.1
Multiband LNAs for 2G/3G/4G Modems
Motivated by increasing demand for mobile broadband services with higher data rates and better quality of
service, the modern mobile technology has seen tremendous growth in the recent years from 2G to 3G/3.5G
HSPA, HSPA+, 3.9G LTE and recently 4G LTE-Advanced. LTE-Advanced can support data rates of up to 1
Gbps. Such higher requirements are met by using advanced Multiple Input Multiple Output (MIMO) techniques
and wider bandwidths up to 100 MHz enabled by Carrier Aggregation (CA). LTE-Advanced can support up to 15
bands of carrier aggregation by three component carrier aggregation scenarios: intra-band contiguous, intraband non-contiguous and inter-band non-contiguous aggregation. This in turn presents new challenges to RF
front-end designers such as interference from co-existing bands and harmonic generations. In order to address
BDTIC
these requirements we need smart LTE low noise amplifiers (LNA) with the following features to achieve
outstanding performance.
Low Noise Figure: An external LNA or LNA bank boosts the sensitivity of the system by reducing the overall
noise figure. In addition due to the size constraint, the modem antenna and the receiver front-end cannot always
be placed close to the transceiver IC. The path loss in front of the integrated LNA on the transceiver IC
increases the system noise figure significantly. An external LNA physically close to the antenna can help to
eliminate the path loss and reduce the system noise figure. Therefore the sensitivity can be improved by several
dB, which means the significant increasement of the connectivity range.
High Linearity: The presence of increased number of bands at the receiver input creates strong interference
leading to high requirements in linearity characteristics such as high input compression point, IMD2 & IIP3
performance.
Low Power Consumption: Power consumption becomes even more important in today’s smartphones. The
latest LTE-Advanced uses enhanced MIMO techniques with up to 8 streams for downlink and 4 streams for
uplink. Infineon’s LNAs and LNA banks have low supply current and an integrated on/off feature which provides
for low power consumption and increases stand by time for cellular handsets or other portable, battery-operated
wireless applications.
High Integration and Simple Control Interface: The demand for size and cost reduction and performance
enhancement with easy to use and low parts count has become very important in existing and future generation
smartphones. Our MMIC LNAs are highly integrated with input and output either matched or pre-matched, inbuilt temperature and supply voltage stabilization and fully Electro-Static Discharge (ESD) protected circuit
design to ensure stable operation and a simple control interface.
Infineon’s new LTE LNAs could almost double smartphone data rates and improve the user experience. The
product family, consisting of single-band LNA BGA7x1N6 series and quad-band LNA Banks BGM7xxxx4L12,
provides a ultra low noise figure, the exact gain and high linearity needed to help smartphone designers to
overcome the challenges of LTE or 4G which allows for data rates up to 300 Mbit/s – compared to 56 Mbit/s in
the latest UMTS (3G) release.
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9
RF and Protection Devices
Application Guide for Mobile Communication
The LNAs and LNA banks are based on Infineon’s Silicon Germanium Carbon (SiGe:C) bipolar technology and
include built-in ESD protection of 2kV HBM even at the input pins.
They are located in the diversity and main antenna paths of the phone and push data rates' limitation, for
example, 96% higher than in solutions without LNAs. High linearity assures optimal signal reception even in
conditions of poorly isolated antenna and long line losses between antenna and transceiver. The typical
sensitivity improvement of more than 3 dB compared to systems without LNAs is achieved in devices with a
package size 70% smaller (1.1×0.7 mm²) than previously available LNAs and 61% smaller (1.9×1.1 mm²) than
previously available LNA banks. The products are also self-shielded to prevent parasitic interference and
require only one external component per LNA.
BDTIC
There are three single-band LTE LNAs and seven quad-band LNA bank families to address the required band
configurations for different world regions, each letter in the series denotes a different frequency band: L for lowband (0.7 GHz to 1.0 GHz); M for mid-band (1.7 GHz to 2.2 GHz); and H for high-band (2.3 GHz to 2.7 GHz).
For example, BGM7MLLM4L12 stands for two low-band LNAs (LNA 2 and LNA3) and two mid-band LNAs (LNA
1 and LNA 4) are integrated into one package. They are shipped in RoHS-compliant TSNP-6-2 or TSLP-12-4
plastic packages.
LNA Bank
from Duplexer
LNA1
BPF
LNA2
3G/4G
Transceiver
IC
LNA3
LNA4
LNA for the main path
The TDD mode LTE system coexists with FDD mode LTE is gaining the importance with the years. Recent
trend of end users to download more and more data anytime and anywhere increases the need of more
bandwidth and an additional receiver channel called “diversity path” in smartphones. In most mobile phones
now, there is more than one antenna to employ the space diversity. The space diversity exploits the multipath
propagation phenomenon of microwave to enhance the reception of cellular signals. The diversity antenna is
usually located far from the main antenna and the transceiver IC. The received signal therefore undergoes the
losses along the path from the diversity switch to the transceiver IC. We need to use a LNA or LNA bank closer
to the diversity switch to overcome this and enhance the sensitivity of the system. The LNAs / LNA banks
improve the receiver performance significantly by reducing the noise contribution of long route line between the
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10
RF and Protection Devices
Application Guide for Mobile Communication
diversity antenna and the transceiver IC, losses incurred due to the band pass filter and noise figure of the
transceiver.
Please visit our website www.infineon.com/rfmmic for more details on LNA solutions for mobile phone
applications or contact your local Infineon representative.
Diversity Switch
LTE LNAs
BGA7H1N6
B8&B40
Diversity / Main
Antenna
BDTIC
B1&B2&B3 BGA7M1N6
3G/4G
Transceiver
IC
Antenna Tuner
B5,8
&B17&B29
BGA7L1N6
PCB Trace
(high insertion loss)
Example of LNA application in the diversity path
New Single-Band LTE MMIC LNAs (product details on request)
Product
Freq. Range
[MHz]
Gain1
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGA7L1N6
728-960
13.0
0.7
2
5
1.5…3.6
4.9
TSNP-6-2
BGA7M1N6
1805-2200
13.0
0.7
2
5
1.5…3.6
4.9
TSNP-6-2
BGA7H1N6
2300-2690
13.0
0.7
2
5
1.5…3.6
4.9
TSNP-6-2
Notes:
Please visit our website about www.infineon.com/lna up to 12 GHz for alternative devices.
New Quad-band LTE LNA Banks (product details on request)
Product
BGM7MLLH4L12
BGM7LMHM4L12
BGM7HHMH4L12
BGM7MLLM4L12
Freq. Range
[MHz]
1805-2200
728-960
728-960
2300-2690
728-960
1805-2200
2300-2690
1805-2200
2300-2690
2300-2690
1805-2200
2300-2690
1805-2200
728-960
728-960
1805-2200
Gain1
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
13.0
0.7
2
5
1.5…3.3
5.0
TSLP-12-4
13.0
0.7
2
5
1.5…3.3
5.0
TSLP-12-4
13.0
0.7
2
5
1.5…3.3
5.0
TSLP-12-4
13.0
0.7
2
5
1.5…3.3
5.0
TSLP-12-4
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11
RF and Protection Devices
Application Guide for Mobile Communication
Freq. Range
[MHz]
Product
BGM7LLHM4L12
BGM7LLMM4L12
Notes:
728-960
728-960
2300-2690
1805-2200
728-960
728-960
1805-2200
1805-2200
Gain1
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
13.0
0.7
2
5
1.5…3.3
5.0
TSLP-12-4
13.0
0.7
2
5
1.5…3.3
5.0
TSLP-12-4
Please visit our website about www.infineon.com/lna up to 12 GHz for alternative devices.
Quad-Band MMIC LNAs
Freq. Range
[MHz]
Gain2)
[dB]
NF2)
[dB]
IP-1dB2)
[dBm]
IIP32)
[dBm]
Supply
[V]
Current2)
[mA]
Package
BGA748L161)
700-1000
700-1000
1450−2000
2100−2700
16.6/-8.0
1.1/8.0
-8/+2
-7/+15
2.8
4.0/0.75
TSNP-16-1
BGA749N161)
700-1000
700-1000
700-1000
2100−2700
16.6/-7.9
1.1/7.9
-8/+2
-7/+14
2.8
4.0/0.76
TSNP-16-1
Product
BDTIC
Notes:
1) LNA with two gain modes (high-gain/low-gain);
2) Values in high-gain / low-gain mode;
3) Please visit our website about www.infineon.com/3G-4Glna for alternative devices.
Triple-Band 3G/4G MMIC LNAs
Product
Freq. Range
[MHz]
Gain3)
[dB]
NF3)
[dB]
IP-1dB3)
[dBm]
IIP33)
[dBm]
Supply
[V]
Current3)
[mA]
Package
BGA735N161)
700-1000
1450−2000
2100−2700
16.5/-7.8
1.1/7.8
-6/-10
-11/-1
2.8
3.7/0.65
TSNP-16-1
BGA734L161)
700-1000
1450−2000
2100−2700
15.1/-7.3
1.2/7.1
-12/-4
-6/+6
2.8
3.5/0.65
TSLP-16-1
BGA736L162)
700-1000
1450−2000
2100−2700
16/2.7/-8.2
1.0/2.5/8.2
-12/-7
-5/+2
2.8
5.2/5.2/0.8
TSLP-16-1
Notes:
1) LNA with two gain modes (high-gain/low-gain);
3) Values in high-gain / [mid-gain] / low-gain mode;
2) LNA with three gain modes (high-gain/mid-gain/low-gain);
4) Please visit our website about www.infineon.com/3G-4Glna for alternative devices.
Dual-Band MMIC LNA
Product
Freq. Range
[MHz]
Gain2)
[dB]
NF2)
[dB]
IP-1dB2)
[dBm]
IIP32)
[dBm]
Supply
[V]
Current2)
[mA]
Package
BGA771L161)
700-1000
1450-2200
16.0/-7.9
1.1/7.9
-7/-10
-6/+3
2.8
3.4/0.65
TSLP-16-1
Notes:
1) LNA with two gain modes (high-gain/low-gain);
2) Values in high-gain (HG) / low-gain (LG) mode;
3) Please visit our website about www.infineon.com/3G-4Glna for alternative devices.
Single-Band MMIC LNAs
Product
BGA713N71)
Freq. Range
[MHz]
Gain2)
[dB]
NF2)
[dB]
IP-1dB2)
[dBm]
IIP32)
[dBm]
Supply
[V]
Current2)
[mA]
Package
700-800
15.3/-9.9
1.1/9.9
-7/-12
-8/-2
2.8
4.8/0.5
TSNP-7-1
BGA751N7
700−1100
16/-8
1.05/9.9
-6/-10
-8/-1
2.8
4.8/0.5
TSNP-7-1
BGA711N71)
1800−2650
17.0/-8
1.1/8.0
-8/-2
-2/+7
2.8
3.6/0.5
TSNP-7-1
1)
2300−2700
16.0/-7.0
1.2/6.9
-10/-2
-2/+7
2.8
4.2/0.5
TSNP-7-1
1)
BGA777N7
Notes:
1) LNA with two gain modes (high-gain/low-gain);
2) Values in high-gain (HG) / low-gain (LG) mode;
3) Please visit our website about www.infineon.com/3G-4Glna for alternative devices.
www.BDTIC.com/infineon
12
RF and Protection Devices
Application Guide for Mobile Communication
2.2
LNAs for 3.5 GHz TD-LTE Modems
TD-LTE Bd 42 / 43
3.4 – 3.8 GHz
LNA
BPF
SPDT
Switch
Balun
TD-LTE
Power Detector
Transceiver IC
BDTIC
PA
BPF
Balun
RF MMIC LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGB707L7ESD
TR171
14.3
1.3
-8
-5
2.8
5.4
TSLP-7-1
Note:
Please visit our website www.infineon.com/rf-mmic for alternative devices.
RF Transistor LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP840FESD
TR1129
17.5
1.1
-13
-3
3.0
15
TSFP-4
BFP843
AN312
17
1.2
-10
-2
3.0
14
SOT343
BFP843F
AN315
18
1.2
-11
-3
3.0
14
TSFP-4
BFR843EL3
AN307
AN328
16
1.1
-11
-1
3.0
12
TSLP-3-9
BFP740
BFP740ESD
TR104
15.4
1.0
-10.5
+3
3.3
15.0
SOT343
Note:
Please visit our website www.infineon.com/lna up to 12 GHz for alternative devices.
RF CMOS TX/RX Switches
Product
Type
App.
Note
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation
[dB]
P-0.1dB3)
[dBm]
Pin,max4)
[dBm]
Ctrl.5)
Int.
Package
BGS12PL6
SPDT
AN319
2.4…3.6
1.4…3.6
0.77
22
38
35
GPIO
TSLP-6-4
Notes:
1) Digital Control Voltage;
3) 0.1dB compression point;
5) Control Interface;
2) IL = Insertion Loss;
4) Maximum input power;
5) on request;
6) Please visit our website www.infineon.com/rfswitches for alternative devices.
www.BDTIC.com/infineon
13
RF and Protection Devices
Application Guide for Mobile Communication
3
Main and Diversity Antenna Switches in Mobile Phones
Infineon uses a proprietary CMOS based process on Silicon substrate for its RF Switches. These switches can
also be realized using other technologies like Gallium Arsenide (GaAs) or the more classical PIN diodes.
However, using CMOS design on Si substrate offers many advantages over its counterparts. The CMOS
process is inherently less expensive than GaAs, so the devices themselves are less expensive. The CMOS
process also enables the driver and control circuitry to be integrated on the same die with the switch, and to be
operated via a single control pin. This simplifies the design process, and reduces the parts count.
Infineon’s RF CMOS switches are the first switches on the market, based purely on the industrial standard
CMOS process which offers low insertion loss, high isolation and low harmonics generation for high volume
BDTIC
production. They are widely used for band selection/switching or diversity switching at the antenna. All Infineon
RF switches do not require external DC blocking capacitors and the control logic interface viz. General Purpose
Input/Output (GPIO), Serial Peripheral Interface (SPI) or Mobile Industry Processor Interface (MIPI) is fully
integrated. With CMOS compatible logic levels, the need of external level shifters is eliminated.
The classical approach of using PIN diodes as switches is getting extinct due to their high current consumption,
slow switching speeds and the requirement of too many external components and higher complexity of mobile
phone systems. CMOS is thus the technology of choice for RF switches due to their small size, low cost, control
logic integration capability and zero external components. In addition to all the above advantages, CMOS
switches offer excellent ESD robustness.
Infineon offers a wide variety of switches and Antenna Switch Modules (ASMs) ranging from simple switches
such as simple Single-Pole Double-Throw (SPDT) to Double-Pole Double-Throw (DPDT) switches to complex
high port count configurations, i.e. Single-Pole ten-Throw (SP10T) or Double-Pole fourteen-Throw (DP14T)
switches. The power capability ranges from medium (20 dBm) to high power (36 dBm).
As for the main path ASM components, Infineon Technologies is using its compact Integrated Passive Device
(IPD) technology to integrate harmonic filters for GSM transmit frequencies in miniature module packages. The
main antenna switch is required to be highly linear and to provide high isolation between transmit and receive
chains, with the lowest insertion loss possible.
For architectures that integrate new features such as downlink inter-band carrier aggregation to increase
downstream data rates, ASMs are facing new challenges as they have to route two signals, received in different
frequency bands, simultaneously. For this kind of applications, the new switches with multiple ports like
SP7T+SP7T, or so-called DP14T, can be applied.
Infineon’s RF switches are delivered either in discrete TSLP or TSNP packaged components or as Chip-ScalePackages (CSP) for module manufacturers. In this module, our switches are combined with filters (Front-End
Module, FEM) or/and duplexers (Front-End Module with Integrated Duplexers, FEMiD).
www.BDTIC.com/infineon
14
RF and Protection Devices
Application Guide for Mobile Communication
3.1
Application Challenges of Antenna Switches in Modern Mobile Applications
Smartphones today can operate across several cellular bands covering GSM/EDGE/CDMA/UMTS/
WCDMA/LTE/TD-SCDMA/TD-LTE/LTE-A. The design of the RF front-end part in modern cellular phones is
becoming increasingly complex and demanding due to the increasing number of frequency bands and modes
that the phone needs to operate in. One of the main components of RF front-end is the antenna switch that
selects which transmitter (TX)/receiver (RX) path can be connected to the antenna. The RF switch has to satisfy
high linearity requirement. The following page presents some of the main challenges of antenna switches in
mobile applications.
BDTIC
2G
Main
Antenna
Multi-Mode
Transceiver
3G/4G
Diversity
Antenna
3G/4G
Typical RF front-end in a mobile phone
www.BDTIC.com/infineon
15
RF and Protection Devices
Application Guide for Mobile Communication
Insertion Loss (IL) is an important parameter since the RF switch is placed between the antenna and the radio.
Any increase of IL results in an increased system noise figure (NF) at receiver path and reduced transmitted
power which causes the reduction of connectivity distance and battery life time.
High Isolation between ports is the measure of the signal suppression in excess of the insertion loss between
the “off” ports. High isolation in switches is desired to minimize the interference or leakage from other ports.
P1dB or P0.1dB Compression Point is a measure for high power capability for RF front-end switches. The
P0.1dB specifies the input power at the switch in dBm, at which, the insertion loss of the switch increases by 0.1
dB than the small signal value in the linear region. This value confirms the power handling capability of the
switch. Infineon’s switches are measured up to an input power of 30 to 40 dBm and no deterioration in the
insertion loss is observed.
BDTIC
Harmonic Generation is an important parameter for the characterization of a RF switch. RF switches for
cellular phones have to deal with high RF levels, up to 36 dBm, even with strong mismatched conditions. With
this high RF power at the input of the switch harmonics are generated. These harmonics (e.g. 2nd and 3rd) can
disturb other reception bands or cause interference in other RF applications (GPS, WLAN) in own mobile phone
or mobile phones nearby.
Intermodulation Distortion (IMD2 and IMD3) is the linearity parameter of the device under multi-tone
conditions. The intermodulation between each frequency component generates undesired outputs at the sum
and difference frequencies of the input tones and at multiples of those sum and difference frequencies. The
intermodulation products increase the occupied bandwidth, leading to adjacent channel interference.
Digital Control Interface: Traditionally switches are controlled through a parallel scheme called General
Purpose Input/Output (GPIO), which involves a set of parallel control pins with pre-defined “high” and “low” logic.
More and more designs are moving from this parallel to a serial control scheme, such as the Serial Peripheral
Interface (SPI). Recently, several major mobile chipset companies formed the Mobile Industry Processor
Interface (MIPI) alliance, aiming to standardize communication between all major components in mobile devices
with structured serial commands. Today there are an increasing number of companies adopting MIPI and
requiring RF switches used in their mobile devices to be MIPI-compatible.
Please visit our website www.infineon.com/rfswitches for more details on main and diversity antenna switches
for mobile phone applications or contact your local Infineon representative.
www.BDTIC.com/infineon
16
RF and Protection Devices
Application Guide for Mobile Communication
3.1.1
Antenna Switch Modules
ANT Switch with GSM Filter
Mobile Phone
Antenna
2G
Transceiver
IC
Antenna Tuner
BDTIC
3G/4G
Transceiver
IC
Duplexer
RF CMOS antenna switch module
RF CMOS Antenna Switch Modules
App.
Note
VCC
[V]
Vctrl1)
[V]
IL2)
[dB]
Iso.3)
[dB]
Pin,max5)
[dBm]
Ctrl.6)
Int.
Package
32 (TRX)/
38 (TX)
32(TRX)/
36 (TX)
SPI
VCCN-20-1
40/25
>30(TRX)/
36 (TX)
30(TRX)/
36 (TX)
GPIO
TSNP-26-2
0.5/0.75(TRX)
1.0/0.85(TX)
>21
>30
30
MIPI
TSNP-26-3
0.5/0.6(TRX)/
1.0/0.9 (TX)
38/27
>30(TRX)/
36 (TX)
30(TRX)/
36 (TX)
MIPI
TSNP-26-3
Product
Type
BGSF17MN26
SP7T
BGSF18DM20
SP8T
AN247
AN284
2.9…
4.7
1.6…
3.5
0.6/0.7 (TRX)/
1.0/1.0 (TX)
40/35
BGSF110GN26
SP10T
AN306
2.4…
3.3
1.4
…3.1
0.5/0.75(TRX)/
0.9/1.0 (TX)
BGSF114MN26
SP14T
on
request
2.4…
5.5
1.05…
1.95
BGSF1717MN26
DP14T
on
request
2.4…
5.5
1.05…
1.95
Notes:
P-0.1dB4)
[dBm]
on request/coming soon
1) Digital Control Voltage;
4) 0.1dB compression point;
6) Control Interface;
2) IL = Insertion Loss at 1.0/ 2.0 GHz; 3) Isolation at 1.0/ 2.0 GHz;
5) Maximum input power;
7) Please visit our website www.infineon.com/rfswitches for alternative devices.
www.BDTIC.com/infineon
17
RF and Protection Devices
Application Guide for Mobile Communication
3.1.2
Ultra High Linearity Switches
The high power handling capability, ultra high linearity, excellent insertion loss and high isolation performance of
the BGS1xPN10 product family combined with a tiny package size meet the most stringent linearity
requirements of GSM/LTE/CDMA handset and data card switching applications. The linearity performance
achieved by these devices makes them well suited for use in Simultaneous Voice and LTE (SV-LTE), WCDMA,
CDMA and carrier aggregation applications. The devices can also be used in a variety of other applications that
require high power RF switching.
BDTIC
Ultra High Linearity Switches
Product
Type
BGS12PN108)
SPDT
BGS13PN108)
SP3T
BGS14PN108)
SP4T
Notes:
App.
Note
VCC
[V]
Vctrl1)
[V]
IL2)
[dB]
Iso.3)
[dB]
Pin,max5)
[dBm]
Ctrl.6)
Int.
Package
on
request
on
request
on
request
2.4…3.6
1.35…2.85
0.15
45
38
GPIO
TSNP-10
2.4…3.6
1.35…2.85
0.15
45
38
GPIO
TSNP-10
2.4…3.6
1.35…2.85
0.15
45
38
GPIO
TSNP-10
1) Digital Control Voltage;
2) IL = Insertion Loss at 900 MHz;
4) 0.1dB compression point;
5) Maximum input power;
6) Control Interface;
8) Coming soon;
7) Please request for more information.
3) Isolation at 900MHz;
www.BDTIC.com/infineon
18
RF and Protection Devices
Application Guide for Mobile Communication
3.1.3
Diversity Antenna Switches
Recent trend of end users to download more and more data anytime and anywhere increases the demand for
more bandwidth and an additional receiver channel called diversity path in smartphones. To select the right
receive band, a diversity switch with low insertion loss and excellent RF performance is one method of choice.
Nowadays, diversity switches covering up to 7 different UMTS/LTE bands are becoming more and more popular
in smartphones and tablet devices.
LTE LNA
BDTIC
PCB Trace
Diversity
Switch
Diversity
Antenna
Diplexer
B38 SAW
B39 SAW
B39 SAW
B40 SAW
B40 SAW
Transceiver
IC
B38 SAW
GSM PA
GSM SAW
Example of TD-LTE band for diversity path
RF CMOS Switches for Diversity Antenna
Product
Type
App.
Note
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation3)
[dB]
P-0.1dB4)
[dBm]
Pin,max5)
[dBm]
Ctrl.6)
Int.
Package
BGS12AL7-6
SPDT
AN175
2.4…3.6
1.4…3.6
0.4/0.5
32/25
> 21
21
GPIO
TSLP-7-6
BGS12SL6
SPDT
AN300
2.4…3.6
1.4…3.6
0.25/0.3
36/29
>27.5
27.5
GPIO
TSLP-6-4
BGS12SN6
SPDT
AN332
1.8…3.3
1.35…3.3
0.25/0.28
40/37
>30
30
GPIO
TSNP-6-2
BGS13SL9
SP3T
AN301
2.4…3.6
1.5…3.6
0.35/0.45
37/27
>30
30
GPIO
TSLP-9-3
BGS14AN16
SP4T
AN331
2.85…4.7
1.5…3.5
0.34/0.55
40/30
>30
30
GPIO
TSNP-16-6
BGS14BN14
SP4T
AN279
2.5…4.7
1.5…4.7
0.42/0.48
40/33
>30
30
GPIO
TSNP-14
BGS15AN16
SP5T
AN230
AN259
2.85..4.7
1.5…3.5
0.34/0.55
38/30
> 32
32
GPIO
TSNP-16-6
BGS15BN14
SP5T
AN330
2.5…4.7
1.5…3.3
0.39/0.5
40/30
> 30
30
GPIO
TSNP-14
BGS16MN14
SP6T
-
2.5…5.5
-
0.3
-
>32
32
MIPI
TSNP-14
BGS18MN14
SP8T
-
2.5…5.5
-
0.35
-
>32
32
MIPI
TSNP-14-3
BGS110MN207)
SP10T
AN333
2.5…5.5
-
0.4
37
>32
32
MIPI
TSNP-20-1
-
2.5…5.5
-
0.4
37
>32
32
MIPI
TSNP-20-1
BGS1414MN20
Notes:
DP8T
1) Digital Control Voltage;
4) 0.1dB compression point;
7) Coming soon;
2) IL = Insertion Loss at 1.0/ 2.0 GHz;
3) Isolation at 1.0/ 2.0 GHz from RFin to port;
5) Maximum input power;
6) Control Interface;
8) Please visit our website www.infineon.com/rfswitches for alternative devices.
www.BDTIC.com/infineon
19
RF and Protection Devices
Application Guide for Mobile Communication
3.1.4
Band Selection Switches in Single-Ended Configuration
The number of LTE bands to support in a mobile phone is increasing rapidly worldwide. A simple way to support
more bands in a mobile phone is to implement the band selection function by adding a RF CMOS switch to the
existing transceiver/diversity ICs. Following two examples show band selection with a SPDT switch in singleended configuration.
UMTS
PCS or IMT
GSM850 RX
GSM1800 RX
GSM1900 RX
GSM850/900 TX
PA
LPF
Transceiver IC
BDTIC
GSM900 RX
GSM1800/1900 TX
UMTS Cell
PCS
SPDT
Switch
UMTS
PCS or IMT
IMT
Application 1: PCS/IMT band switching with CMOS SPDT switch
Diversity Switch
Duplexer
SPDT
Switch
PA
TX
DPT
Diversity
Antenna
Transceiver
IC
Duplexer
SPDT
Switch
DPDT
RX
LNA
Application 2: LTE Band-1/Band-4 switching with CMOS SPDT switch
www.BDTIC.com/infineon
20
RF and Protection Devices
Application Guide for Mobile Communication
RF CMOS Switches
Product
Type
BGS12AL7-4
SPDT
App.
Note
AN175
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation3)
[dB]
P-0.1dB4)
[dBm]
Pin,max5)
[dBm]
Ctrl.6)
Int.
Package
2.4…3.6
1.4…3.6
0.4/0.5
32/25
> 21
21
GPIO
TSLP-7-4
2.4…3.6
1.4…3.6
0.4/0.5
32/25
> 21
21
GPIO
TSLP-7-6
BGS12AL7-6
SPDT
BGS12PL6
SPDT
AN319
2.4…3.6
1.4…3.6
0.36/0.5
37/30
38
35
GPIO
TSLP-6-4
BGS12SL6
SPDT
AN300
2.4…3.6
1.4…3.6
0.25/0.3
36/29
>27.5
27.5
GPIO
TSLP-6-4
BGS12SN6
SPDT
AN332
1.8…3.3
1.35…3.3
0.25/0.28
40/37
>30
30
GPIO
TSNP-6-2
BGS13SL9
SP3T
AN301
2.4…3.6
1.5…3.6
0.35/0.45
37/27
>30
30
GPIO
TSLP-9-3
Notes:
1) Digital Control Voltage;
4) 0.1dB compression point;
6) Control Interface;
2) IL = Insertion Loss at 1.0/ 2.0 GHz;
5) Maximum input power;
7) Please request for more information.
3) Isolation at 1.0/ 2.0 GHz;
BDTIC
Ultra High Linearity Switches
Product
Type
BGS12PN108)
SPDT
BGS13PN108)
SP3T
BGS14PN108)
SP4T
Notes:
App.
Note
VCC
[V]
Vctrl1)
[V]
IL2)
[dB]
Iso.3)
[dB]
Pin,max5)
[dBm]
Ctrl.6)
Int.
Package
on
request
on
request
on
request
2.4…3.6
1.35…2.85
0.15
45
38
GPIO
TSNP-10
2.4…3.6
1.35…2.85
0.15
45
38
GPIO
TSNP-10
2.4…3.6
1.35…2.85
0.15
45
38
GPIO
TSNP-10
1) Digital Control Voltage;
2) IL = Insertion Loss at 900 MHz;
4) 0.1dB compression point;
5) Maximum input power;
6) Control Interface;
8) Coming soon;
7) Please request for more information.
3) Isolation at 900MHz;
www.BDTIC.com/infineon
21
RF and Protection Devices
Application Guide for Mobile Communication
3.1.5
Band Selection Switches in Differential Configuration
The following figure shows the transceiver with differential inputs of band selection function with a DPDT switch
in differential configuration.
Diversity Switch
B3L
Diversity
Antenna
Differential
Input
B3L
DPDT
BDTIC
B1&B8
B1
B7L
High Band
Transceiver
IC
DPDT
B20L
B20L
Low Band
Example of band selection switches in differential configuration
RF CMOS DPDT Switches
Product
Type
App.
Note
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation3)
[dB]
P-0.1dB4)
[dBm]
Pin,max5)
[dBm]
Ctrl.6)
Int.
Package
BGS22WL10
DPDT
AN302
2.4…3.6
1.2…VDD
0.33/0.39
38/28
34
30
GPIO
TSLP-10-1
BGS22W2L10
DPDT
AN308
2.4…3.6
1.2…VDD
0.22/0.39
35/27
29
24
GPIO
TSLP-10-1
Notes:
1) Digital Control Voltage;
4) 0.1dB compression point;
6) Control Interface;
2) IL = Insertion Loss at 1.0/ 2.0 GHz; 3) Isolation at 1.0/ 2.0 GHz;
5) maximum input power;
7) Please visit our website www.infineon.com/rfswitches for alternative devices.
www.BDTIC.com/infineon
22
RF and Protection Devices
Application Guide for Mobile Communication
3.2
Antenna Tuning Switches
The antenna tuning devices based on Infineon’s CMOS switch technology allows the construction of antennas
in mobile phones of reduced size and/or broader frequency range. This technology will allow much improved
impedance matching for a single antenna across a wide frequency range, and therefore reduce power stress on
the transmitter side and increase sensitivity on the receiver side. Figure below shows a block diagram of the
antenna tuning with Infineon’s BGSA12GN10 and BGSA14GN10.
ANT
BDTIC
to Front-End
Antenna Tuning Switch
Block diagram of antenna tuning with switch
RF CMOS Switches for Antenna Tuning
App.
Note
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation3)
[dB]
Product
Type
BGSA12GN10
SPDT
on request
BGSA14GN10
SP4T
on request
Notes:
1) Digital Control Voltage;
4) in ON state;
6) maximum input power;
Ron4)
[Ω]
COFF5)
[fF]
2) IL = Insertion Loss at 1.0/ 2.0 GHz; 3) Isolation at 1.0/ 2.0 GHz;
5) in OFF state;
7) Please visit our website www.infineon.com/rfswitches for alternative devices.
www.BDTIC.com/infineon
23
Pin,max6)
[dBm]
Package
RF and Protection Devices
Application Guide for Mobile Communication
3.3
PIN Diode Switches
An alternative device compared to CMOS or GaAs switch is the high performance PIN diode, available from
Infineon Technologies. For less complex RF circuits like triple and quad band GSM/EDGE phones, PIN diodes
are a good and favorable choice. PIN diodes can be used for switching if there is a requirement on much lower
IMD generation in the mobile phone. The following sections demonstrate some switch solutions based on
Infineon’s PIN-switch diodes for cost effective phones or base stations.
Low barrier Schottky power detection diodes are used for precise output power control after the power amplifier.
It helps the transceiver IC to monitor the correct information about the mismatch condition of the mobile phone
BDTIC
antenna to the environment and adjust signal power accordingly.
Key Features of PIN Diodes
Insertion Loss and Isolation: Insertion loss is dependent on the low impedance state of the diode in forward
bias. Isolation is a measure of the PIN diode switch’s performance in its open state. In a series diode switch, this
is primarily dependent on the junction capacitance. These parameters are determined by the forward bias
current and reverse voltage. Infineon’s diodes have low capacitance and low resistance which are optimized for
applications where ultra-low resistance is required.
Switching Time: The carrier life time in a PIN diode dominates the switching speed, i.e., the time required to
switch the diode from a low-impedance forward bias state to a high-impedance reverse bias state.
www.BDTIC.com/infineon
24
RF and Protection Devices
Application Guide for Mobile Communication
3.3.1
Antenna Switch with PIN Diodes & Power Detection with Schottky Diodes
PIN Diode
Power Detector
Power Detector
PA
PIN Diode
λ/4
λ/4
PA
PIN Diode
BDTIC
PIN Diode
TX GSM BB IC
RX GSM
RX DCS
RX PCS
BB IC TX DCS
RF PIN Diode Switches
Product1)
Application
Note
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT3)
[pF]
@VR
[V]
τL4)
[ns]
Package
BAR90-098LRH D
BAR90-081LS
Q
BAR90-02LRH
AN058
TR1054
TR146
1.3
3.0
0.8
10.0
0.25
1.0
750
TSLP-4-7
TSSLP-8-1
TSLP-2-7
BAR64-02LRH
AN058
12.5
1
2.1
10
0.23
20
1550
TSLP-2-7
AN058
12.5
1
2.1
10
0.23
20
1550
SOT23
AN058
12.5
1
2.1
10
0.23
20
1550
SOT323
on request
12.5
1
2.1
10
0.23
20
1550
SOT143
BAR64-04
BAR64-05
BAR64-06
BAR64-04W
BAR64-05W
BAR64-06W
BAR64-07
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) The carrier life time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
5) Please visit our website www.infineon.com/rf-pin-diodes for alternative devices.
RF Schottky Diodes for Power Detectors
Product1)
BAT62-02L
BAT62-02LA4
BAT62-07L4
D
BAT15-02LRH
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
AN185
0.35
0
580
2
-
-
< 10
40
TSLP-2-1
TSSLP-2-1
on request
0.35
0
580
2
-
-
< 10
40
TSLP-4-4
on request
0.26
0
230
1
320
10
<5
4
TSLP-2-7
BAT15-07LRH
D
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
BAT15-098LRH
Q
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
4) Please visit our website www.infineon.com/rf-mixer-detector-schottky-diodes for alternative devices.
www.BDTIC.com/infineon
25
RF and Protection Devices
Application Guide for Mobile Communication
3.3.2
Ultra-Low-Harmonic-Generation Band Switch with PIN Diodes
ICTRL1
ANT
ICTRL2
Port2 TX/RX
Port1 TX/RX
BDTIC
PIN Diodes
PIN Diodes
RF PIN Diode Switches
Product1)
BAR64-02LRH
BAR64-04
BAR64-05
BAR64-06
BAR64-04W
BAR64-05W
BAR64-06W
BAR64-07
Notes:
Application
Note
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT3)
[pF]
@VR
[V]
τL4)
[ns]
Package
on request
12.5
1
2.1
10
0.23
20
1550
TSLP-2-7
on request
12.5
1
2.1
10
0.23
20
1550
SOT23
on request
12.5
1
2.1
10
0.23
20
1550
SOT323
on request
12.5
1
2.1
10
0.23
20
1550
SOT143
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) The carrier life time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
5) Please visit our website www.infineon.com/rf-pin-diodes for alternative devices.
www.BDTIC.com/infineon
26
RF and Protection Devices
Application Guide for Mobile Communication
3.3.3
Antenna Switching with PIN Diodes (I)
ANT 1
ANT
RX
ANT 2
RX
PIN Diode
PIN Diode
STUB
PIN Diode
BDTIC
Antenna selection
3.3.4
Antenna effective length modification
Antenna Tuning with PIN Diodes (II)
ANT
ANT
LPF
LPF
RX
RX
LNA (opt.)
LNA (opt.)
PIN Diodes
PIN Diodes
Tunable antenna with moderate IMD generation
3.3.5
Tunable antenna with low IMD generation
Bypass Path for Low Noise Amplifiers
LNA
PIN Diodes
RF PIN Diode Switches
Product1)
Application
Note
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT3)
[pF]
@VR
[V]
τL4)
[ns]
Package
BAR90-098LRH D
on request
1.3
3.0
0.8
10.0
0.25
1.0
750
TSLP-4-7
BAR90-081LS
on request
1.3
3.0
0.8
10.0
0.25
1.0
750
TSSLP-8-1
Notes:
Q
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
5) Please visit our website www.infineon.com/rf-pin-diodes for alternative devices.
www.BDTIC.com/infineon
27
RF and Protection Devices
Application Guide for Mobile Communication
4
Global Navigation Satellite System
Global Navigation Satellite Systems (GNSS) are among the fastest growing businesses in the electronic
industry. Today, GNSS is much more than the well-known GPS, which was introduced for civilian use more than
a decade ago. Nations around the world are working on their own navigation satellite systems for strategic
reasons and also to offer improved user experience. Today, three GNSS systems are operational: the United
States GPS, the Russian GLONASS and the Chinese Beidou. The Galileo positioning system being developed
by the European Union is expected to be functional by 2014.
BDTIC
From a civilian usage point, additional systems added to GNSS bring with them the advantages of increased
satellite signal reception, increased coverage, higher precision and the facility for additional features such as
Search And Rescue (SAR). The most important market segments since 2008 are Personal Navigation Devices
(PND) and GNSS enabled mobile phones. The architecture and the performance of the so-called RF front-end
is the key contributor to fulfill the strict requirements of the GNSS system, because it consists of the whole lineup between the GNSS antenna and the integrated GNSS chipset. The main challenges for the growing GNSSenabled mobile phone market are to achieve high sensitivity and high immunity against interference of cellular
signals driven by government regulations for safety and emergency reasons, for example, in the US and Japan.
This means the reception for GPS/GLONASS signals at very low power levels down to less than -160 dBm in
mobile phones in the vicinity of co-existing high power cellular signals. In addition, excellent ESD robustness
characteristics and low power consumption for long battery usage duration are mandatory features for portable
and mobile phones.
Infineon Technologies is the market leader in GNSS LNAs for navigation applications in PND and cellular
products. Infineon Technologies offers a complete product portfolio to all customers designing high performance
flexible RF front-end solutions for GNSS:
- Low Noise Amplifiers (LNA): consisting of a wide range of products like high performance MMICs as
well as cost effective and high end RF transistors
- Front-End Module (FEM): Infineon offers the world’s smallest GPS/GLONASS FEMs with LNAs and
band-pass filter(s) integrated into a single tiny package with well-optimized performance for navigation in
mobile phones
- Transient Voltage Suppression (TVS) Diodes: protecting GNSS antenna reliably up to 20 kV
- RF Switches: allow for diversity architecture with active antenna
www.BDTIC.com/infineon
28
RF and Protection Devices
Application Guide for Mobile Communication
Infineon’s GNSS LNA and FEM products have excellent features including low noise figure, high gain, high
linearity, high levels of ESD protection and low power consumption to fulfill customer’s needs to satisfy the
increasing requirements of GNSS systems. Infineon offers LNAs optimized for high linearity and high gain. Our
latest GNSS LNA products covering all current and future GNSS systems include BGA924 and BGA824 with
very low noise figure and high Out-of-Band (OoB) IP3 to enhance the interference immunity.
BGA925L6 and BGA825L6 are two of the smallest GNSS LNAs worldwide with low noise figure and high OoB
BDTIC
performance and designed to work under extreme jamming conditions. BGA725L6 is one of the smallest GNSS
LNA with high gain and low noise.
According to various GPS/GLONASS antenna designs in mobile phones, new GPS/GLONASS FEM products
are released with the following two topologies:
- SAW-Filter/LNA Topology: it enables system design with flexibility to place the GPS/GLONASS antenna
without degradation of the GPS/GLONASS performance.
-> BM1033N7, BGM1034N7, BGM1043N7 and BGM1044N7
- Notch Filter/SAW-Filter/LNA Topology: With an additional integrated notch filter in front of the GNSS
FEM, the GNSS is enhanced to reject the mobile jammer signals, especially at LTE Band-13 to ensure
the GNSS reception even with weak GNSS and high jammer signal conditions.
All Infineon GNSS FEM products offer an ESD robustness at the RF input pin higher than 6 kV according to
IEC61000-4-2 contact discharge standard.
Please visit our website www.infineon.com/rf-gps and www.infineon.com/rf-nav.frontend for more details on
products for navigation in mobile phones and portable devices or contact your local Infineon representative.
www.BDTIC.com/infineon
29
RF and Protection Devices
Application Guide for Mobile Communication
4.1
Key Features of GNSS Front-End Components
4.1.1
Key Features of Low Noise Amplifiers (LNAs)
Low Noise Figure & High Gain: The power levels of satellite signals received by a GPS/GNSS receiver are as
low as -160 dBm. This poses a challenge on the sensitivity of the system. An external LNA with low noise figure
and high gain is required to boost the sensitivity of the system and Time-To-First Fix (TTFF).
High Linearity: In modern mobile phones, the GNSS signals are co-habited by strong interfering cellular
BDTIC
signals. The cellular signals can mix to produce Intermodulation products exactly in the GNSS receiver
frequency band. To enhance interference immunity of the GNSS systems, LNAs with high linearity
characteristics such as input IP3 and input P1dB are required.
Low Current Consumption: Power consumption is an important feature in GNSS devices which are mainly
battery operated mobile devices. Infineon’s LNAs have an integrated power on/off feature which provides for low
power consumption and increased stand-by time for GNSS handsets. Moreover, the low current consumption
(3.6 mA) makes Infineon’s LNAs suitable for portable technology like GNSS receivers and mobile phones.
4.1.2
Key Features of Surface Acoustic Wave (SAW) Filters
Low Insertion Loss: The pre-filter should not contribute to losses in the system since it is the first block after
the antenna in the receiver chain, which will impact the noise figure of the receiver system significantly.
Infineon’s SAW filters introduce an insertion loss of only 1 dB in the pass band.
High Out-of-Band Rejection: The strong cellular signals, coexisting in cellphone can drive the GNSS LNA into
saturation. These signals can be filtered out with a pre-filter and post-filter to prevent interferences in later
stages. The SAW filter should have high out-of-band rejection. Infineon’s SAW filters have high out-of-band
rejection of about 34 dB.
High Linearity Capability: It is verified that not only LNA, but also the SAW filter plays an important role to
introduce out-of-band intermodulation products of mobile signals which fall into the GNSS bands directly.
Therefore it is a key requirement for a GNSS SAW filter to have high linear surface acoustic resonators,
especially at the input stage resonators of the SAW filter.
www.BDTIC.com/infineon
30
RF and Protection Devices
Application Guide for Mobile Communication
4.2
System Challenges for Modern GNSS Reception in Mobile Devices
GNSS receivers for mobile or handheld devices are always under the threat of high power cellular signals. Due
to the coexistence of GNSS and cellular services, there is a strong coupling of the DCS/PCS and cellular
(GSM/CDMA/3G/LTE) signals to the GPS receiver. The performance of a standard integrated GNSS receiver
chip cannot meet the specifications required for the present systems. An external RF front-end is essential to
achieve this required performance. The most important prerequisites for the front-end of a GNSS receiver are
low noise figure and sufficient amplification of the desired signal together with high attenuation of the jammer
signals. We need an external LNA with low noise figure and high gain preceded by a band pass filter with low
BDTIC
insertion loss and high out-of-band attenuation to achieve this.
GNSS receiver sensitivity enhancement with an external LNA
In the circuit chain of a receiver, the noise figure of the first stage LNA dominates the overall system noise
figure. Consider a GNSS receiver IC with noise figure of 2.3 dB.
By adding Infineon’s LNA BGA824N6 with NF 0.6 dB and Gain 17 dB to the front of the receiver IC, the noise
factor Fsys of the receiver system can be expressed by using Friis Formula:
𝐹sys = 𝐹LNA +
𝐹receiver − 1
𝐺LNA
Using the above equation, 𝐹sys = 1.16. Therefore, 𝑁𝐹sys = 10 log 𝐹sys = 0.66 dB
This means, the sensitivity of the GNSS system can be improved by 1.6 dB through the external LNA.
We can see that the noise figure of the system is dominated by the noise figure and gain of the first stage LNA.
Adding a LNA with very low noise figure and excellent linear performance improve the overall receiver sensitivity
which leads to low TTFF and more GNSS coverage in real field applications at the end user.
www.BDTIC.com/infineon
31
RF and Protection Devices
Application Guide for Mobile Communication
Noise Figure degradation due to high power of jammer signal
High power interfering jammer signals may leak into the GNSS receiver and affect the receiver’s sensitivity by
overdriving the receiver’s LNA. This presents a major challenge to RF front designers to maintain the receiver’s
sensitivity for weak incoming GNSS signals. It is important to use an external LNA with a very good noise
performance in the presence of strong interfering signals. That means that the LNA needs to inhabit outstanding
out-of-band P1dB performance against jammer signal to not be “desensitized”. The following figure shows the
noise figure degradation of a LNA due to high power of incoming jammer signals.
BDTIC
0.6
1575 MHz
0.5
1598 MHz
1602 MHz
1606 MHz
Noise figure degradation [dB]
0.4
0.3
0.2
0.1
0
-0.1
0
5
10
15
20
25
Jammer Power at 1710 MHz [dBm]
Desensitization effect due to jammer signal
www.BDTIC.com/infineon
32
30
RF and Protection Devices
Application Guide for Mobile Communication
Out-of-band interference
In today’s smartphones with integrated multi-functionality, GNSS and GSM/EDGE/UMTS/LTE coexist in a
compact area. Coupling from GSM/EDGE/UMTS/LTE transmitter to GPS receiver results in out-of-band (OoB)
intermixing of signals at GSM/EDGE/UMTS/LTE bands. For example GSM 1712.7 MHz and UMTS 1850 MHz
produce third-order intermodulation product at GPS frequency. This effect desensitizes the GPS receiver and
decreases its performance. Out-of-band measurements are used to quantify this. The out-of-band IIP3 can be
calculated as follows.
Out-of-band Input 𝐼𝑃3 = 𝑃1IN + [𝑃2IN − (𝐼𝑀3out_GPS − 𝐺𝑎𝑖𝑛at GPS )]⁄2
BDTIC
The following figure demonstrates the out-of-band IP3 measurement.
A GSM signal of frequency f1IN = 1713 MHz and power P1IN = -20 dBm and UMTS signal of frequency f2IN =
1851 MHz and power P2IN = -20 dBm are used. The third order intermodulation product, 2×f1IN – f2IN, is located
at the GPS band.
Using the above equation, the OoB IIP3 can be calculated as
𝐼𝐼𝑃3 = −20 + [−20 − (−64.8 − 15.81) )]⁄2 = 10.3 dBm,
Note: 1) Gain at GPS is from BGA925L6.
which is well above the specified value for mobile GNSS application, e.g. about +7 dBm.
Out-of-band IIP3 measurement
www.BDTIC.com/infineon
33
RF and Protection Devices
Application Guide for Mobile Communication
LTE Band 13 interference
The 2nd harmonic of LTE band-13 (700 MHz) is located in the GNSS band at 1575 MHz. The following block
diagram depicts the interference measurement of LTE band-13 with the GNSS band of 1575 MHz.
H2 of LTE band
13 1575.52 MHz
-80 dBm
LTE band 13
787.76 MHz
+25 dBm
3G/4G
Transceiver
IC
BDTIC
9 dB worst case
Isolation
GNSS
Receiver IC
H2 of LTE band
13 1575.52 MHz
H2 of LTE band
13 1575.52 MHz
-89 dBm
In this case, considering a worst case isolation of 9 dB between the both antennas, jammer frequency fLTE
=787.76 MHz the power of the second harmonic fH2 = 1575.52 MHz is -89 dBm at the GPS antenna.
Infineon MMICs and FEMs provide very high out-of-band signal rejection along with high input compression
point. As an example, BGM1043N7 shows a rejection of -70 dBm. Please refer to Infineon’s application note
AN287 for more information.
www.BDTIC.com/infineon
34
RF and Protection Devices
Application Guide for Mobile Communication
4.3
Global Navigation Satellite System (GNSS) with Discrete RF Devices
GPS: 1575.42 MHz
GLONASS: 1598.0625 – 1609.3125 MHz
Galileo & COMPASS (北斗): 1559.052 – 1591.788 MHz
BPF
LNA
Amp
BPF
Mixer
BPF
Signal
Processing
ESD Diode
BDTIC
GPS Receiver
LO
RF MMIC LNAs
Product
Application
Note
Gain1)
[dB]
NF1)
[dB]
IP-1dB1)
[dBm]
IIP31)
[dBm]
Supply
[V]
Current1)
[mA]
Package
BGA925L6
AN265
AN266
AN267
AN274
15.8
15.5
15.6
14.5
0.7
1.0
0.8
2.0
-7
-9
-9
-5
1.7
-5
-5
-2
1.5…3.6
5.0
TSLP-6-2
BGA915N7
AN251
AN253
15.5
0.8
-4
0
1.5…3.6
4.7
TSNP-7-6
AN297
AN304
AN3182)
AN325
AN326
AN334
17.1
15.9
-17.0
15.4
16.4
0.6
1.7
-0.6
2.0
0.9
-5.7
-5.3
--7
-5.2
-8.7
6.5
-1.1
-+2
-4.9
-7.1
1.5…3.6
5.0
5.2
-3.9
4.1
4.0
AN280
19.9
0.7
-15
-6
1.5…3.6
3.9
TSLP-6-2
BGA715L7
BGA715N7
AN161
20.2
0.7
-15
-7
1.5…3.6
3.3
TSLP-7-1
TSNP-7-2
BGA231L7
BGA231N7
AN250
AN273
AN276
16.0
15.2
15.0
0.7
2.3
2.1
-5
-3.5
-3.5
-1
+1
+1
1.5…3.6
4.4
4.7
4.5
TSLP-7-1
TSNP-7-2
BGA524N6
coming soon
19.6
0.6
-12
-8
1.5…3.6
2.5
TSNP-6-2
BGA924N6
coming soon
16.2
0.6
-6
+3
1.5…3.6
4.8
TSNP-6-2
BGA825L6
BGA824C2)
BGA824N6
BGA725L6
2)
Notes:
1.5…3.6
TSLP-6-3
FWLP-6-1
TSNP-6-2
1) Supply voltage at 2.8 V and frequency at 1575 MHz;
2) on request;
3) Please visit our website www.infineon.com/gnss for alternative devices.
RF Transistor LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP740ESD
BFP740FESD
BFR740L3RH
AN120
19.7
0.7
-17
0
1.8
9.6
SOT343
TSFP-4
TSLP-3-9
BFP640ESD
BFP640FESD
AN194
16.5
0.7
-16
+1
2.1
7.5
SOT343
TSFP-4
BFP640F
AN128
15.2
0.8
-13
0
2.1
8.0
TSFP-4
BFP405
AN149
15.3
1.6
-23
-5
1.8
2.6
SOT343
Note:
Please visit our website www.infineon.com/lna up to 12 GHz for alternative devices.
www.BDTIC.com/infineon
35
RF and Protection Devices
Application Guide for Mobile Communication
TVS Diodes for antenna ESD protection
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD105-B102EL/02ELS
med. PRF
±5.5
±25
±14@±16
±20@±30
0.35
2
5
8.5
11
0.3
1
TSLP-2-20
TSSLP-2-4
ESD108-B1-CSP0201
Q2/CJ14
med. PRF
±5.5
±25
±20@±16
±31@±30
0.76
1
2.5
8.5
11
0.25
1
ESD112-B102EL/02ELS
med. PRF
±5.3
±20
±29@±16
±44@±30
1.0
1
3
11
15
0.2
1
ESD101-B102EL/02ELS
med. PRF
AN327
±5.5
±12
±18@±8
±30@±16
1.5
-
-
0.10
1
ESD103-B102EL/02ELS
higher. PRF
AN327
±15
±10
±36@±8
±48@±16
1.8
-
-
0.10
1
TSLP-2-20
TSSLP-2-4
TSLP-2-20
TSSLP-2-4
TSLP-2-20
TSSLP-2-4
BDTIC
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website www.infineon.com/protection/low-cap.esd-diodes for alternative devices.
www.BDTIC.com/infineon
36
RF and Protection Devices
Application Guide for Mobile Communication
4.4
Global Navigation Satellite System (GNSS) with Integrated Front-End
Modules
GPS: 1575.42 MHz
GLONASS: 1598.0625 – 1609.3125 MHz
BPF
LNA
BPF
Amp
Mixer
BPF
Signal
Processing
FEM
ESD
Diode
BDTIC
GNSS Receiver
LO
RF MMIC FEMs (DC and In-Band Parameters)
Product
BGM1043N7
BGM1044N7
Application
Note
AN283
AN286
AN287
AN294
AN282
FEM
Conf.
SAW+LNA
SAW+LNA
Gain1)
[dB]
NF1)
[dB]
IP-1dB1)
[dBm]
IIP31)
[dBm]
15.1
14.8
14.6
14.8
16.7
1.5
1.6
1.7
1.6
1.5
-6.3
-7.2
-6.5
-6.5
-13.7
-6.0
-6.4
-6.4
-5.9
-8.6
Supply
[V]
1.5…3.6
1.5…3.6
Current1)
[mA]
4.4
4.1
4.2
4.1
4.0
BGM1032N7
AN263
AN264
SAW+LNA
14.5
15.2
1.8
1.7
-7.9
-6.8
-6.6
-6.2
1.5…3.6
4.4
4.2
BGM1033N7
AN261
AN264
SAW+LNA
15.1
1.8
-7.1
-6.1
1.5…3.6
4.3
BGM1034N7
AN268
AN269
SAW+LNA
17.0
1.7
-13.1
-8.7
1.5…3.6
4.2
BGM1143N9
AN335
SAW+LNA
15.8
1.5
-6.0
-5.0
1.5…3.6
3.8
2400 MHz
IP-1dB2)
[dBm]
IMD23)
[dBm]
IIP34)
[dBm]
Package
44
50
47
47
49
60
31/33
31/33
30/32
30/32
26/30
-50
-32
-70
-84
-46
63
63
64
64
59
Notes:
1) Supply voltage at 2.8 V and frequency at 1575 MHz;
2) on request.
RF MMIC FEMs (Out-of-Band Parameters)
Jammer signal rejection [dBc]1)
Application
Note
900 MHz
AN283
AN286
AN287
AN294
AN282
49
49
44
52
51
BGM1032N7
AN263
AN264
45
51
42
41
55
55
30/31
29/32
-74
-5)
66
65
TSNP-7-10
BGM1033N7
AN261
AN264
51
42
56
28/31
-5)
66
TSNP-7-10
BGM1034N7
AN268
AN269
56
50
63
22
-5)
65
TSNP-7-10
BGM1143N9
AN335
65
42
58
30
-5)
60
TSNP-9-1
Product
BGM1043N7
BGM1044N7
Notes:
1800 MHz
43
1) Rejection is defined as [Gain at 1575 MHz] – [Attenuation at stop band frequency];
2) IP-1dB is measured at 900 and 1710 MHz;
3) IMD2 is measured at 1575 MHz with fin = 787.5 MHz with Pin = +15 dBm;
4) IIP3 is measured with f1 = 1713 MHz and f2 = 1850 MHz with P1/P2 = +10 dBm;
5) on request;
6) BGM732N16 is not for new designs anymore. Please take BGM1034N7 for your new designs;
7) All Infineon GNSS FEM products offer ESD robustness higher than 6 kV at RF input pin according to IEC61000-4-2 contact discharge standard;
8) Please visit our www.infineon.com/rf-nav.frontend for alternative devices.
www.BDTIC.com/infineon
37
TSNP-7-10
TSNP-7-10
RF and Protection Devices
Application Guide for Mobile Communication
TVS Diodes for antenna ESD protection
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD105-B102EL/02ELS
med. PRF
±5.5
±25
±14@±16
±20@±30
0.35
2
5
8.5
11
0.3
1
TSLP-2-20
TSSLP-2-4
ESD108-B1-CSP0201
Q2/CJ14
med. PRF
±5.5
±25
±20@±16
±31@±30
0.76
1
2.5
8.5
11
0.25
1
ESD112-B102EL/02ELS
med. PRF
±5.3
±20
±29@±16
±44@±30
1.0
1
3
11
15
0.2
1
ESD101-B102EL/02ELS
med. PRF
AN327
±5.5
±12
±18@±8
±30@±16
1.5
-
-
0.10
1
ESD103-B102EL/02ELS
higher. PRF
AN327
±15
±10
±36@±8
±48@±16
1.8
-
-
0.10
1
TSLP-2-20
TSSLP-2-4
TSLP-2-20
TSSLP-2-4
TSLP-2-20
TSSLP-2-4
BDTIC
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website www.infineon.com/protection/low-cap.esd-diodes for alternative devices.
www.BDTIC.com/infineon
38
RF and Protection Devices
Application Guide for Mobile Communication
5
Wi-Fi Wireless LAN (WLAN, IEEE 802.11a/ac/b/g/n)
The Wi-Fi function is one of the most important connectivity functions in notebooks, smartphones and tablet
PCs. Wi-Fi according to IEEE 802.11b/g/n at 2.4 GHz is widely implemented over years. Today Wi-Fi is not only
used for the high data rate access to the internet, but also in different applications like home entertainment with
wireless high-quality multimedia signal transmission such as Wireless HDMI in TV-sets, DVD-players etc. Due
to the cloudy WLAN network at 2.4 GHz, the Wi-Fi applications at 5–6 GHz according to IEEE 802.11a/ac/n are
gaining focus. Wireless@Home devices such as home networking notebooks, mass data storages and printers
implement 5-6 GHz Wi-Fi features into their system to offer high-speed wireless connection.
BDTIC
The 802.11n operates at both 2.4 GHz and 5 GHz while supporting multiple data streams to increase the speed
and throughput.
With the arrival of new wireless devices such as tablets, wireless VoIP devices, game consoles, ebooks etc. the
requirements on wireless data quality have become more stringent than ever. New WLAN standards are being
developed to cater to these high throughput requirements by using
i)
Higher order modulation schemes
ii)
Wider channel bandwidth
iii)
Multiple data streams
The draft 802.11ac is an extension of 802.11n, providing a minimum of 500 Mbps single link and up to 1 Gbps
overall throughput, running in the 5 GHz band. The draft 802.11ad provides up to 7 Gbps throughput using
approximately 2 GHz of spectrum at 60 GHz over a short range . The following table shows the evolving trend of
the IEEE 802.11 standards.
Comparison of 802.11 a/b/g/n/ac/ad standards
Standard
Frequency
Range
Data Rate
[GHz]
[Mbps]
Count of
Channels
Channel
Bandwidth
Modulation
Scheme
MIMO
Streams
[MHz]
802.11
2.4 – 2.5
802.11b
2.4 – 2.5
802.11g
2.4 – 2.5
802.11n
2.4 – 2.5
54
up to 14
20, 40
802.11a
5.1 – 5.9
54
422)
20
802.11n
5.1 – 5.9
up to 422)
20, 40
OFDM
802.11ac
5.1 – 5.9
up to 422)
20, 40, 80, 160
256QAM
802.11ad
57 - 64
Notes:
1) three non-overlapping channels;
2
11
54
600
(4x4 MIMO)
1300
(3 streams)
up to 7000
1)
20
DSSS, FHSS
1
1)
20
DSSS
1
20
OFDM, DSSS
1
OFDM
4
14
14
1)
14
1)
50,100, 250 MHz
--
up to 4 GHz
OFDM
64QAM
16QAM
2) twelve non-overlapping channels.
www.BDTIC.com/infineon
39
1
4
up to 8,
MU-MIMO
--
RF and Protection Devices
Application Guide for Mobile Communication
5.1
Key Features of WLAN Front-End
Key performance metrics for any WLAN application are speed of data transfer and coverage which are greatly
influenced by transmitted power, receiver sensitivity, noise and interference.
Low Noise Figure: A Wi-Fi router has to receive relatively weak signals from Wi-Fi enabled devices such as
mobile phones. Therefore, it should have high sensitivity to detect a weak signal in the presence of strong
interfering signals. The sensitivity of the receiver can be improved the receiver by using a low noise amplifier
(LNA) as the first block of the receiver front-end to reduce the noise figure of the overall system.
High Linearity: WLAN systems are subject to co-channel interference and also interference from strong co-
BDTIC
existing cellular signals. High linearity characteristics such as IIP3 and input compression point are required to
improve an application's ability to distinguish between desired signals and spurious signals received close
together.
The contribution of an external LNA in a WLAN front-end system can be demonstrated as follows:
Let’s consider an 802.11a system for 54 Mbps requiring a minimum S/N (Signal-to-Noise Ratio) of 25 dB to
achieve a BER (Bit Error Rate) better than 1e-5.
For the WLAN receiver chipset with a noise figure NFreceiver of 2 dB without LNA, the sensitivity S of -75 dBm can
be calculated as:
𝑆
𝑆 = 𝑁𝐹 + 𝑁0 + ( )
𝑁 min
Where,
𝑁o = 10 log10 kTB = −102 dBm
N0: thermal noise floor for 20 MHz BW,
𝑆 = 2 dB − 102 dBm + 25 dB = −75 dBm
NF: the noise figure of the receiver
S: system sensitivity
In order to improve the sensitivity, the system noise figure needs to be reduced.
In the case of adding LNA in front of the WLAN receiver, the overall system noise figure Fsys of the cascaded
receiver system can be calculated using the Friis formula,
𝐹sys = 𝐹LNA +
𝐹receiver − 1
𝐺LNA
It can be seen that the noise figure of function blocks after the first stage LNA is suppressed by the amplification
factor of the LNA, therefore the system is dominated mainly by the noise figure of the first LNA block. It is
therefore important to use a low noise, high gain amplifier in the receiver front-end chain to improve the overall
system noise figure and therefore the sensitivity.
Using Infineon’s LNA BFR840L3RHESD with noise figure NF of 0.92 dB and Gain of 14.7 dB (@5.9 GHz), the
overall NFsys can be calculated as
www.BDTIC.com/infineon
40
RF and Protection Devices
Application Guide for Mobile Communication
𝐹sys = 1.24 +
1.58 − 1
= 1.25
54.95
𝑁𝐹sys = 10 log 𝐹sys = 0.97 dB
This results in improving the receiver sensitivity to -76 dBm with a net improvement of 1 dB and a corresponding
increase in range by approximately 20% with 54 Mbps data rate.
The resulted 1 dB improvement in receiver sensitivity is crucial today with designers across the globe
trying to achieve state of the art connectivity with their products.
One another long-range and high data rate wireless standard, WiMAX (IEEE 802.16e) at 2.3 GHz to 2.7 GHz,
3.3 GHz to 3.7 GHz and 5.725 GHz to 5.8 GHz, plays an important role in certain areas for fast setup of the high
BDTIC
data rate, last mile wireless communication infrastructure where no 3G/4G networks are available e.g. in
emerging markets or country sides. WiMAX is designed for high data rate wireless communication up to 70
Mbps, which is suitable for fixed point-to-point (P2P) communication and also for portable or mobile
connections.
Infineon offers a wide RF product portfolio for both applications Wi-Fi and WiMAX. It includes:
- discrete transistors & MMIC LNAs,
- power detection diodes,
- as well as RF CMOS and pin diode switches.
For these kinds of high speed, high data rate wireless communication standards, it is essential to ensure the
quality of the link path. Major performance criteria of these equipment have to be fulfilled, namely: sensitivity,
signal strength and interference immunity with proper link budget.
In addition, Infineon also offers RF ESD protection diodes. The ESD protection diode series, ESD-112-B102ELS and ESD103-B1-02EL/02ELS, have a line capacitance value of only 0.2 pF and 0.1 pF respectively and
can protect the system from ESD strikes up to 8 kV contact discharge according to the IEC-61000-4-2 standard.
www.BDTIC.com/infineon
41
RF and Protection Devices
Application Guide for Mobile Communication
5.2
Dual-Band (2.4–6.0 GHz) WLAN (IEEE 802.11a/b/g/n) Front-End
2.4 GHz LNA
Dual-Band WLAN:
2.4 – 6 GHz
RX Diplexer
RXg
RXa
SPDT
Switch
5 GHz LNA
ESD
Diode
Transceiver
IC
TXg
2.4 GHz PA
BDTIC
TX Diplexer
Power
Detector 5 GHz PA
TXa
Dual-band (2.4–6.0 GHz) WLAN (IEEE 802.11a/b/g/n)
Bluetooth
2.4 GHz LNA
Dual-Band WLAN:
2.4 – 6 GHz
+ Bluetooth
RXn
SP3T
Switch
Power
Detector
Diplexer
TXn
2.4 GHz PA
Transceiver
IC
5 GHz LNA
ESD
Diode
RXac
SPDT
Switch
Power
Detector
5 GHz PA
TXac
Dual-band (2.4–6.0 GHz) WLAN (IEEE 802.11a/b/g/n) and Bluetooth front-end
www.BDTIC.com/infineon
42
RF and Protection Devices
Application Guide for Mobile Communication
RF Transistor LNAs
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP842ESD
AN296
AN322
18.6
19.3
0.7
0.8
-10.1
-9.9
3.6
2.6
3.0
11.7
11.9
SOT343
BFP840FESD
AN320
20.6
1.1
-16.2
-7.2
3.0
14.1
TSFP-4
BFP760
AN310
AN324
16.7
0.9
-9.7
-10.1
-0.2
0.9
3.0
14.5
SOT343
BFP740F
AN171
17.4
0.8
-13
-3
3.6
14.7
TSFP-4
BFP740FESD
AN217
17.6
0.8
-7.5
-4
3.3
13.0
SOT343
BFP640ESD
AN218
16.5
0.8
-12
+9
3.0
7.3
SOT343
BFP640FESD
AN129
15.5
0.9
-11
0
3.0
6.3
TSFP-4
AN288
AN316
AN317
17.7
16.0
16.0
1.0
1.1
1.1
-11.4
-10.8
-9.5
-2.1
-1
0.5
3.0
9.1
SOT343
18.3
1.1
-9.9
-0.7
3.0
14.0
TSFP-4
15.1
1.0
-8
+2
3.0
9.4
TSLP-3-9
11.9
1.1
-2.7
9.2
3.0
11.2
SOT343
SOT343
Product
2.4 GHz LNA
BDTIC
5 GHz LNA
BFP840ESD
BFP840FESD
BFR840L3RHESD
BFP760
AN289
AN299
AN281
AN290
AN303
AN323
BFP740ESD
AN219
15.5
1.3
-6
+7
3.0
14.7
BFP740FESD
AN220
17.1
1.4
-9
+1
3.0
14.8
TSFP-4
BFR740L3RH
AN170
14.3
1.3
-5
+4
3.0
12.9
TSLP-3-9
BFP720ESD
on request
15.2
0.9
-8
+5
3.0
10.3
SOT343
BFP720FESD
on request
18.6
1.6
-8
+2
3.0
12.2
TSFP-4
2.4 GHz & 5 GHz Broadband LNA
BFP843
BFP843F
BFR843EL3
AN312
AN315
AN307
19.5/14.7
19.8/15.9
18.5/13.3
1.1/1.4
1.1/1.3
1.0/1.3
-12.3/-8.4
-12.0/-8.9
-12.1/-7.5
-2.1/1.3
-2.4/-1.5
-1.9/2.8
3.0
3.0
3.0
13.8
13.0
12.2
SOT343
TSFP-4
TSLP-3-9
BFP840ESD
BFP840FESD
BFR840L3RHESD
AN292
18.5/15
1.1/1.4
-15/-12.6
-5.5/0.3
3.0
9.4
SOT343
TSFP-4
TSLP-3-9
BFP740ESD
BFP740FESD
AN189
17.5/13.5
1.3/1.3
-16/-8
-8/+4
2.8
12.0
SOT343
TSFP-4
BFR740L3RH
AN115
15.7/10.0
1.1/1.3
-11/-5
0/+7
3.0
10.0
TSLP-3-9
BFP720ESD
BFP720FESD
AN187
14.0/12.0
1.2/1.4
-15/-5
-9/+6
2.8
13.0
SOT343
TSFP-4
Note:
Please visit our website www.infineon.com/lna up to 12 GHz for alternative devices.
www.BDTIC.com/infineon
43
RF and Protection Devices
Application Guide for Mobile Communication
RF MMIC LNAs
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGB741L7ESD
AN207
TR102
17.5
18.7
1.5
1.1
-4.0
-6.7
-1.2
+2
3.0
10.0
10.8
TSLP-7-1
BGB707L7ESD
AN195
TR170
15
14.2
1.2
-9.
-8
-1.4
-4
2.8
5.6
5.3
TSLP-7-1
BGA622
AN069
12.6
1.3
-15
-4
2.8
5.4
SOT343
12
2.0
-1
8.5
3.0
6
TSLP-7-1
Product
2.4 GHz LNA
5 GHz LNA
AN207
BGB741L7ESD
BDTIC
TR10121)
BGB707L7ESD
Notes:
1) on request;
13.3
2.3
-6
-4.3
2.8
3.2
TSLP-7-1
2) Please visit our website www.infineon.com/rf-mmic for alternative devices.
RF CMOS Switches
Product
Type
App.
Note
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation
[dB]
P-0.1dB3)
[dBm]
Pin,max4)
[dBm]
Ctrl.5)
Int.
Package
2.4 GHz Switches
BGS12AL7-4
BGS12AL7-6
SPDT
AN175
2.4…3.6
1.4…3.6
0.5
25
> 21
21
GPIO
TSLP-7-4
TSLP-7-6
BGS13SL9
SP3T
AN3017)
2.4…3.6
1.5…3.6
0.5
27
>30
30
GPIO
TSLP-9-3
2.4 GHz and 5 GHz Broadband Switches
BGS12SL6
SPDT
AN300
2.4…3.6
1.4…3.6
0.35/1.06)
30/186)
>27.5
27.5
GPIO
TSLP-6-4
BGS12SN6
SPDT
AN3327)
1.8…3.3
1.4…3.3
0.3/0.56)
32/306)
>30
30
GPIO
TSNP-6-2
Notes:
1) Digital Control Voltage;
2) IL = Insertion Loss;
3) 0.1dB compression point;
4) Maximum input power;
5) Control Interface;
6) Value at 2.4 GHz/5 GHz;
7) on request;
8) Please visit our website www.infineon.com/rfswitches for alternative devices.
RF Schottky Diodes for Power Detectors
Product1)
BAT62-02L
BAT62-02LA4
BAT62-07L4
D
BAT15-02LRH
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
AN185
0.35
0
580
2
-
-
< 10
40
TSLP-2-1
TSSLP-2-1
on request
0.35
0
580
2
-
-
< 10
40
TSLP-4-4
on request
0.26
0
230
1
320
10
<5
4
TSLP-2-7
BAT15-07LRH
D
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
BAT15-098LRH
Q
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
4) Please visit our website www.infineon.com/rf-mixer-detector-schottky-diodes for alternative devices.
www.BDTIC.com/infineon
44
RF and Protection Devices
Application Guide for Mobile Communication
TVS Diodes for antenna ESD protection
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD105-B102EL/02ELS
med. PRF
±5.5
±25
±14@±16
±20@±30
0.35
2
5
8.5
11
0.3
1
TSLP-2-20
TSSLP-2-4
ESD108-B1-CSP0201
Q2/CJ14
med. PRF
±5.5
±25
±20@±16
±31@±30
0.76
1
2.5
8.5
11
0.25
1
ESD112-B102EL/02ELS
med. PRF
±5.3
±20
±29@±16
±44@±30
1.0
1
3
11
15
0.2
1
ESD101-B102EL/02ELS
med. PRF
AN327
±5.5
±12
±18@±8
±30@±16
1.5
-
-
0.10
1
ESD103-B102EL/02ELS
higher. PRF
AN327
±15
±10
±36@±8
±48@±16
1.8
-
-
0.10
1
TSLP-2-20
TSSLP-2-4
TSLP-2-20
TSSLP-2-4
TSLP-2-20
TSSLP-2-4
BDTIC
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website www.infineon.com/protection/low-cap.esd-diodes for alternative devices.
www.BDTIC.com/infineon
45
RF and Protection Devices
Application Guide for Mobile Communication
5.3
MIMO Configurations for WLAN (IEEE 802.11b/g/n and IEEE 802.11a/n/ac)
Applications
IEEE 802.11n at 2.4 GHz and at 5 GHz bands introduced the Multiple Input Multiple Output (MIMO) topologies
in advanced high data rate WLAN applications.
MIMO exploits a radio-wave phenomenon called multipath propagation: transmitted information bounces off
walls, doors, and other objects, taking multiple paths to reach the receiving antennas. MIMO harnesses
multipath with the antenna diversity technique known as space-division multiplexing. The transmitter IC
BDTIC
multiplexes a data stream into multiple spatial streams, and transmits each spatial stream through separate
antennas to corresponding antennas on the receiving end.
Doubling the number of spatial streams from one to two effectively doubles the data rate. However, increased
power consumption due to the presence of multiple transmitter and receiver chains presents a major challenge
in optimizing the battery life of the device. Infineon’s products offer very low power consumption thus optimizing
the battery life of the device.
The current IEEE 802.11n provides up to four spatial streams i.e., 4x4 MIMO. The draft IEEE 802.11ac supports
up to 8 spatial streams including Multi-User MIMO (MU-MIMO). MU-MIMO is an advanced MIMO technique
which enables multiple users to communicate with the transmitter. The following figures show examples of some
MIMO configurations.
In the following pages, several practical implementations of single-band and dual-band WLAN MIMO front-ends
are illustrated. Please refer the previous sections for the corresponding products for each function block.
RX1
TX1
TX
RX
RX2
TX2
2x2 MIMO
www.BDTIC.com/infineon
46
RF and Protection Devices
Application Guide for Mobile Communication
RX1
TX1
BDTIC
TX
RX
RXn
TXn
nxn MIMO
RX1
TX1
RX
User1
TX2
RX2
TX3
RX3
RX
User2
TX4
RX4
RX
User3
RX
Multi-User MIMO (MU-MIMO)
www.BDTIC.com/infineon
47
RF and Protection Devices
Application Guide for Mobile Communication
LNA
BPF
RXg
WLAN 2.4 GHz
SPDT
Switch
TXg
ESD
Diode
.
.
.
Power Detector
BPF
n = 1, 2, 3…
PA
.
.
.
nx n
2.4GHz
WLAN
Transceiver IC
BDTIC
LNA
BPF
RXg
WLAN 2.4 GHz
SPDT
Switch
Power Detector
TXg
ESD
Diode
BPF
PA
2.4 GHz WLAN IEEE 802.11b/g/n nxn MIMO front-end
BPF
LNA
RXa
WLAN 4.9 – 5.9 GHz
SPDT
Switch
TXa
ESD
Diode
.
.
.
n = 1, 2, 3…
Power Detector
BPF
PA
.
.
.
nx n
5 GHz
WLAN
Transceiver IC
BPF
LNA
RXa
WLAN 4.9 – 5.9 GHz
SPDT
Switch
ESD
Diode
Power Detector
TXa
BPF
PA
5 GHz WLAN IEEE 802.11a/n/ac nxn MIMO front-end
www.BDTIC.com/infineon
48
RF and Protection Devices
Application Guide for Mobile Communication
2.4 GHz LNA
RX Diplexer
RXg
WLAN: 2.4 / 5 GHz
RXa
SPDT
Switch
5 GHz LNA
TXg
ESD
Diode
2.4 GHz PA
TX Diplexer
.
.
.
n = 1, 2, 3…
Power
Detector 5 GHz PA
.
.
.
nx n
2.4/5 GHz
WLAN
Transceiver
IC
TXa
BDTIC
RXg
WLAN: 2.4 / 5 GHz
RXa
TXg
TXa
Dual-band WLAN 2.4 & 5 GHz IEEE 802.11b/g/n and 802.11a/n/ac nxn MIMO front-end with dual-band
antennas, dual-band TX and RX paths using dual-band LNAs
RF Transistor LNAs
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP842ESD
AN296
AN322
18.6
19.3
0.7
0.8
-10.1
-9.9
3.6
2.6
3.0
11.7
11.9
SOT343
BFP840FESD
AN320
20.6
1.1
-16.2
-7.2
3.0
14.1
TSFP-4
BFP760
AN310
AN324
16.7
0.9
-9.7
-10.1
-0.2
0.9
3.0
14.5
SOT343
AN288
AN316
AN317
17.7
16.0
16.0
1.0
1.1
1.1
-11.4
-10.8
-9.5
-2.1
-1
0.5
3.0
9.1
SOT343
18.3
1.1
-9.9
-0.7
3.0
14.0
TSFP-4
15.1
1.0
-8
+2
3.0
9.4
TSLP-3-9
11.9
1.1
-2.7
9.2
3.0
11.2
SOT343
Product
2.4 GHz LNA
5 GHz LNA
BFP840ESD
BFP840FESD
BFR840L3RHESD
BFP760
AN289
AN299
AN281
AN290
AN303
AN323
2.4 GHz & 5 GHz Broadband LNA
BFP843
BFP843F
BFR843EL3
AN312
AN315
AN307
19.5/14.7
18.5/13.3
1.1/1.4
1.0/1.3
12/17
12.5/17.5
17.5/16
18.5/13
3.0
3.0
13.8
12.2
SOT343
TSFP-4
TSLP-3-9
BFP840ESD
BFP840FESD
BFR840L3RHESD
AN292
18.5/15
1.1/1.4
-15/-12.6
-5.5/0.3
3.0
9.4
SOT343
TSFP-4
TSLP-3-9
Note:
Please visit our website www.infineon.com/lna up to 12 GHz for alternative devices.
www.BDTIC.com/infineon
49
RF and Protection Devices
Application Guide for Mobile Communication
RF MMIC LNAs
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGB741L7ESD
AN207
TR102
17.5
18.7
1.5
1.1
-4.0
-6.7
-1.2
+2
3.0
10.0
10.8
TSLP-7-1
BGB707L7ESD
AN195
TR170
15
14.2
1.2
-9
-8
-1.4
-4
2.8
5.6
5.3
TSLP-7-1
BGA622
AN069
12.6
1.3
-15
-4
2.8
5.4
SOT343
Product
2.4 GHz LNA
5 GHz LNA
BGB741L7ESD
AN207
12
2.0
-1
8.5
3.0
6
TSLP-7-1
BGB707L7ESD
TR10121)
13.3
2.3
-6
-4.3
2.8
3.2
TSLP-7-1
BDTIC
Notes:
1) on request;
2) Please visit our website www.infineon.com/rf-mmic for alternative devices.
RF CMOS Switches
Product
Type
App.
Note
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation
[dB]
P-0.1dB3)
[dBm]
Pin,max4)
[dBm]
Ctrl.5)
Int.
Package
2.4 GHz Switches
BGS12AL7-4
BGS12AL7-6
SPDT
AN175
2.4…3.6
1.4…3.6
0.5
25
> 21
21
GPIO
TSLP-7-4
TSLP-7-6
BGS12PL6
SPDT
AN319
2.4…3.6
1.4…3.6
0.5
30
38
35
GPIO
TSLP-6-4
2.4 GHz and 5 GHz Broadband Switches
BGS12SL6
SPDT
AN300
2.4…3.6
1.4…3.6
0.35/1.06)
30/186)
>27.5
27.5
GPIO
TSLP-6-4
BGS12SN6
SPDT
AN332
1.8…3.3
1.4…3.3
0.3/0.56)
32/306)
>30
30
GPIO
TSNP-6-2
Notes:
1) Digital Control Voltage;
3) 0.1dB compression point;
6) Value at 2.4 GHz/5 GHz;
2) IL = Insertion Loss;
4) Maximum input power;
5) Control Interface;
7) Please visit our website www.infineon.com/rfswitches for alternative devices.
RF Schottky Diodes for Power Detectors
Product1)
BAT62-02L
BAT62-02LA4
BAT62-07L4
D
BAT15-02LRH
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
AN185
0.35
0
580
2
-
-
< 10
40
TSLP-2-1
TSSLP-2-1
on request
0.35
0
580
2
-
-
< 10
40
TSLP-4-4
on request
0.26
0
230
1
320
10
<5
4
TSLP-2-7
BAT15-07LRH
D
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
BAT15-098LRH
Q
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
4) Please visit our website www.infineon.com/rf-mixer-detector-schottky-diodes for alternative devices.
www.BDTIC.com/infineon
50
RF and Protection Devices
Application Guide for Mobile Communication
TVS Diodes for antenna ESD protection
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD105-B102EL/02ELS
med. PRF
±5.5
±25
±14@±16
±20@±30
0.35
2
5
8.5
11
0.3
1
TSLP-2-20
TSSLP-2-4
ESD108-B1-CSP0201
Q2/CJ14
med. PRF
±5.5
±25
±20@±16
±31@±30
0.76
1
2.5
8.5
11
0.25
1
ESD112-B102EL/02ELS
med. PRF
±5.3
±20
±29@±16
±44@±30
1.0
1
3
11
15
0.2
1
ESD101-B102EL/02ELS
med. PRF
AN327
±5.5
±12
±18@±8
±30@±16
1.5
-
-
0.10
1
ESD103-B102EL/02ELS
higher. PRF
AN327
±15
±10
±36@±8
±48@±16
1.8
-
-
0.10
1
TSLP-2-20
TSSLP-2-4
TSLP-2-20
TSSLP-2-4
TSLP-2-20
TSSLP-2-4
BDTIC
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website www.infineon.com/protection/low-cap.esd-diodes for alternative devices.
www.BDTIC.com/infineon
51
RF and Protection Devices
Application Guide for Mobile Communication
2.4 GHz LNA
RX Diplexer
WLAN:
2.4 / 5 GHz
RXg
ESD
Diode
RXa
5 GHz LNA
WLAN:
2.4 / 5 GHz
TXg
2.4 GHz PA
ESD
Diode
.
.
.
TX Diplexer
Power
Detector 5 GHz PA
.
.
.
nx n
2.4/5 GHz
WLAN
Transceiver
IC
TXa
BDTIC
n = 1, 2, 3…
WLAN:
2.4 / 5 GHz
RXg
ESD
Diode
RXa
WLAN:
2.4 / 5 GHz
TXg
ESD
Diode
TXa
Dual-band WLAN 2.4 & 5 GHz IEEE 802.11b/g/n and 802.11a/n/ac nxn MIMO front-end with dual-band
antennas separate for TX and RX, dual-band TX and RX paths using dual-band LNAs
RF MMIC LNAs
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGB741L7ESD
AN207
TR102
17.5
18.7
1.5
1.1
-4.0
-6.7
-1.2
+2
3.0
10.0
10.8
TSLP-7-1
BGB707L7ESD
AN195
TR170
15
14.2
1.2
-9.
-8
-1.4
-4
2.8
5.6
5.3
TSLP-7-1
BGA622
AN069
12.6
1.3
-15
-4
2.8
5.4
SOT343
Product
2.4 GHz LNA
5 GHz LNA
BGB741L7ESD
AN207
12
2.0
-1
8.5
3.0
6
TSLP-7-1
BGB707L7ESD
TR10121)
13.3
2.3
-6
-4.3
2.8
3.2
TSLP-7-1
Notes:
1) on request;
2) Please visit our website www.infineon.com/rf-mmic for alternative devices.
www.BDTIC.com/infineon
52
RF and Protection Devices
Application Guide for Mobile Communication
RF Transistor LNAs
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP842ESD
AN296
AN322
18.6
19.3
0.7
0.8
-10.1
-9.9
3.6
2.6
3.0
11.7
11.9
SOT343
BFP840FESD
AN320
20.6
1.1
-16.2
-7.2
3.0
14.1
TSFP-4
BFP760
AN310
AN324
16.7
0.9
-9.7
-10.1
-0.2
0.9
3.0
14.5
SOT343
AN288
AN316
AN317
17.7
16.0
16.0
1.0
1.1
1.1
-11.4
-10.8
-9.5
-2.1
-1
0.5
3.0
9.1
SOT343
Product
2.4 GHz LNA
5 GHz LNA
BFP840ESD
BDTIC
BFP840FESD
BFR840L3RHESD
Note:
AN289
AN299
AN281
AN290
18.3
1.1
-9.9
-0.7
3.0
14.0
TSFP-4
15.1
1.0
-8
+2
3.0
9.4
TSLP-3-9
Please visit our website www.infineon.com/lna up to 12 GHz for alternative devices.
RF Schottky Diodes for Power Detectors
Product1)
BAT62-02L
BAT62-02LA4
BAT62-07L4
D
BAT15-02LRH
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
AN185
0.35
0
580
2
-
-
< 10
40
TSLP-2-1
TSSLP-2-1
on request
0.35
0
580
2
-
-
< 10
40
TSLP-4-4
on request
0.26
0
230
1
320
10
<5
4
TSLP-2-7
BAT15-07LRH
D
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
BAT15-098LRH
Q
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
4) Please visit our website www.infineon.com/rf-mixer-detector-schottky-diodes for alternative devices.
TVS Diodes for antenna ESD protection
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD105-B102EL/02ELS
med. PRF
±5.5
±25
±14@±16
±20@±30
0.35
2
5
8.5
11
0.3
1
TSLP-2-20
TSSLP-2-4
ESD108-B1-CSP0201
Q2/CJ14
med. PRF
±5.5
±25
±20@±16
±31@±30
0.76
1
2.5
8.5
11
0.25
1
ESD112-B102EL/02ELS
med. PRF
±5.3
±20
±29@±16
±44@±30
1.0
1
3
11
15
0.2
1
ESD101-B102EL/02ELS
med. PRF
AN327
±5.5
±12
±18@±8
±30@±16
1.5
-
-
0.10
1
ESD103-B102EL/02ELS
higher. PRF
AN327
±15
±10
±36@±8
±48@±16
1.8
-
-
0.10
1
Notes:
TSLP-2-20
TSSLP-2-4
TSLP-2-20
TSSLP-2-4
TSLP-2-20
TSSLP-2-4
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website www.infineon.com/protection/low-cap.esd-diodes for alternative devices.
www.BDTIC.com/infineon
53
RF and Protection Devices
Application Guide for Mobile Communication
RXg
2.4 GHz LNA w. bypass
Dual-Band WLAN:
2.4 – 6 GHz
SPDT
Switch
RXa
5 GHz LNA w. bypass
TX Diplexer
ESD
Diode
2.4/5 GHz
WLAN
Transceiver
IC
TXg
2.4 GHz PA
BDTIC
Power
Detector
5 GHz PA
TXa
Dual-band (2.4-6.0 GHz) WLAN (IEEE 802.11a/b/g/n/ac) application front-end
RF Transistor LNAs
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP842ESD
AN296
AN322
18.6
19.3
0.7
0.8
-10.1
-9.9
3.6
2.6
3.0
11.7
11.9
SOT343
BFP740FESD
AN217
17.6
0.8
-7.5
-4
3.3
13.0
SOT343
BFP640ESD
AN218
16.5
0.8
-12
+9
3.0
7.3
SOT343
BFP640FESD
AN129
15.5
0.9
-11
0
3.0
6.3
TSFP-4
AN288
AN316
AN317
17.7
16.0
16.0
1.0
1.1
1.1
-11.4
-10.8
-9.5
-2.1
-1
0.5
3.0
9.1
SOT343
18.3
1.1
-9.9
-0.7
3.0
14.0
TSFP-4
15.1
1.0
-8
+2
3.0
9.4
TSLP-3-9
11.9
1.1
-2.7
9.2
3.0
11.2
SOT343
Product
2.4 GHz LNA
5 GHz LNA
BFP840ESD
BFP840FESD
BFR840L3RHESD
BFP760
AN289
AN299
AN281
AN290
AN303
AN323
BFP740ESD
AN219
15.5
1.3
-6
+7
3.0
14.7
SOT343
BFP740FESD
AN220
17.1
1.4
-9
+1
3.0
14.8
TSFP-4
BFP720ESD
on request
15.2
0.9
-8
+5
3.0
10.3
SOT343
BFP720FESD
on request
18.6
1.6
-8
+2
3.0
12.2
TSFP-4
2.4 GHz & 5 GHz Broadband LNA
BFP843
BFP843F
BFR843EL3
AN312
on request
AN307
19.5/14.7
18.5/13.3
1.1/1.4
1.0/1.3
12/17
12.5/17.5
17.5/16
18.5/13
3.0
3.0
13.8
12.2
SOT343
TSFP-4
TSLP-3-9
BFP840ESD
BFP840FESD
BFR840L3RHESD
AN292
18.5/15
1.1/1.4
-15/-12.6
-5.5/0.3
3.0
9.4
SOT343
TSFP-4
TSLP-3-9
BFP740ESD
BFP740FESD
AN189
17.5/13.5
1.3/1.3
-16/-8
-8/+4
2.8
12.0
SOT343
TSFP-4
BFR740L3RH
AN115
15.7/10.0
1.1/1.3
-11/-5
0/+7
3.0
10.0
TSLP-3-9
Note:
Please visit our website www.infineon.com/lna up to 12 GHz for alternative devices.
www.BDTIC.com/infineon
54
RF and Protection Devices
Application Guide for Mobile Communication
RF CMOS Switches
Product
Type
App.
Note
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation
[dB]
P-0.1dB3)
[dBm]
Pin,max4)
[dBm]
Ctrl.5)
Int.
Package
2.4 GHz Switches
BGS12AL7-4
BGS12AL7-6
SPDT
AN175
2.4…3.6
1.4…3.6
0.5
25
> 21
21
GPIO
TSLP-7-4
TSLP-7-6
BGS12PL6
SPDT
AN319
2.4…3.6
1.4…3.6
0.5
30
38
35
GPIO
TSLP-6-4
Notes:
1) Digital Control Voltage;
2) IL = Insertion Loss;
3) 0.1dB compression point;
4) Maximum input power;
5) Control Interface;
6) Please visit our website www.infineon.com/rfswitches for alternative devices.
RF Schottky Diodes for Power Detectors
Product1)
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
AN185
0.35
0
580
2
-
-
< 10
40
TSLP-2-1
TSSLP-2-1
on request
0.35
0
580
2
-
-
< 10
40
TSLP-4-4
on request
0.26
0
230
1
320
10
<5
4
TSLP-2-7
BDTIC
BAT62-02L
BAT62-02LA4
BAT62-07L4
D
BAT15-02LRH
BAT15-07LRH
D
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
BAT15-098LRH
Q
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
4) Please visit our website www.infineon.com/rf-mixer-detector-schottky-diodes for alternative devices.
RF PIN Diode for Bypass Functions
Product1)
Application
Note
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT3)
[pF]
@VR
[V]
τL4)
[ns]
Package
BAR86-02ELS
on request
11.8
1
3.5
10
0.15
10
-
TSLP-2-3
BAR86-02LRH
on request
11.8
1
3.5
10
0.15
10
-
TSLP-2-17
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 GHz;
4) The carrier life time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
6) Please visit our website www.infineon.com/rf-pin-diodes for alternative devices.
5) on request;
TVS Diodes for antenna ESD protection
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD105-B102EL/02ELS
med. PRF
±5.5
±25
±14@±16
±20@±30
0.35
2
5
8.5
11
0.3
1
TSLP-2-20
TSSLP-2-4
ESD108-B1-CSP0201
Q2/CJ14
med. PRF
±5.5
±25
±20@±16
±31@±30
0.76
1
2.5
8.5
11
0.25
1
ESD112-B102EL/02ELS
med. PRF
±5.3
±20
±29@±16
±44@±30
1.0
1
3
11
15
0.2
1
ESD101-B102EL/02ELS
med. PRF
AN327
±5.5
±12
±18@±8
±30@±16
1.5
-
-
0.10
1
ESD103-B102EL/02ELS
higher. PRF
AN327
±15
±10
±36@±8
±48@±16
1.8
-
-
0.10
1
Notes:
TSLP-2-20
TSSLP-2-4
TSLP-2-20
TSSLP-2-4
TSLP-2-20
TSSLP-2-4
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website www.infineon.com/protection/low-cap.esd-diodes for alternative devices.
www.BDTIC.com/infineon
55
RF and Protection Devices
Application Guide for Mobile Communication
LNA
BPF
WLAN 4.9 – 5.9 GHz
SPDT
Switch
Power Detector
TXa
ESD
Diode
.
.
.
RXa
PA
BPF
.
n = 1, 2, 3… .
.
RXa
BDTIC
WLAN 4.9 – 5.9 GHz
TXa
LNA
BPF
WLAN 2.4 GHz
.
.
.
SPDT
Switch
RXg
2.4/5 GHz
nx n
WLAN
Transceiver
IC
Power Detector
TXg
ESD
Diode
n = 1, 2, 3…
.
.
.
PA
BPF
RXg
WLAN 2.4 GHz
TXg
Dual-band WLAN 2.4 & 5 GHz IEEE 802.11b/g/n and 802.11a/n/ac nxn MIMO front-end with
single-band antennas
RF MMIC LNAs
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGB741L7ESD
AN207
TR102
17.5
18.7
1.5
1.1
-4.0
-6.7
-1.2
+2
3.0
10.0
10.8
TSLP-7-1
BGB707L7ESD
AN195
TR170
15
14.2
1.2
-9.
-8
-1.4
-4
2.8
5.6
5.3
TSLP-7-1
BGA622
AN069
12.6
1.3
-15
-4
2.8
5.4
SOT343
Product
2.4 GHz LNA
5 GHz LNA
BGB741L7ESD
AN207
12
2.0
-1
8.5
3.0
6
TSLP-7-1
BGB707L7ESD
TR10121)
13.3
2.3
-6
-4.3
2.8
3.2
TSLP-7-1
Notes:
1) on request;
2) Please visit our website www.infineon.com/rf-mmic for alternative devices.
www.BDTIC.com/infineon
56
RF and Protection Devices
Application Guide for Mobile Communication
RF Transistor LNAs
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFP842ESD
AN296
AN322
18.6
19.3
0.7
0.8
-10.1
-9.9
3.6
2.6
3.0
11.7
11.9
SOT343
BFP840FESD
AN320
20.6
1.1
-16.2
-7.2
3.0
14.1
TSFP-4
BFP760
AN310
AN324
16.7
0.9
-9.7
-10.1
-0.2
0.9
3.0
14.5
SOT343
AN288
AN316
AN317
17.7
16.0
16.0
1.0
1.1
1.1
-11.4
-10.8
-9.5
-2.1
-1
0.5
3.0
9.1
SOT343
18.3
1.1
-9.9
-0.7
3.0
14.0
TSFP-4
15.1
1.0
-8
+2
3.0
9.4
TSLP-3-9
Product
2.4 GHz LNA
5 GHz LNA
BFP840ESD
BDTIC
AN289
AN299
AN281
AN290
BFP840FESD
BFR840L3RHESD
Note:
Please visit our website www.infineon.com/lna up to 12 GHz for alternative devices.
RF CMOS Switches
Product
Type
App.
Note
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation
[dB]
P-0.1dB3)
[dBm]
Pin,max4)
[dBm]
Ctrl.5)
Int.
Package
2.4 GHz Switches
BGS12AL7-4
BGS12AL7-6
SPDT
AN175
2.4…3.6
1.4…3.6
0.5
25
> 21
21
GPIO
TSLP-7-4
TSLP-7-6
BGS12PL6
SPDT
AN319
2.4…3.6
1.4…3.6
0.5
30
38
35
GPIO
TSLP-6-4
Notes:
1) Digital Control Voltage;
2) IL = Insertion Loss;
3) 0.1dB compression point;
4) Maximum input power;
5) Control Interface;
6) Please visit our website www.infineon.com/rfswitches for alternative devices.
RF Schottky Diodes for Power Detectors
Product1)
BAT62-02L
BAT62-02LA4
BAT62-07L4
D
BAT15-02LRH
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
AN185
0.35
0
580
2
-
-
< 10
40
TSLP-2-1
TSSLP-2-1
on request
0.35
0
580
2
-
-
< 10
40
TSLP-4-4
on request
0.26
0
230
1
320
10
<5
4
TSLP-2-7
BAT15-07LRH
D
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
BAT15-098LRH
Q
on request
0.26
0
230
1
320
10
<5
4
TSLP-4-7
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
4) Please visit our website www.infineon.com/rf-mixer-detector-schottky-diodes for alternative devices.
www.BDTIC.com/infineon
57
RF and Protection Devices
Application Guide for Mobile Communication
TVS Diodes for antenna ESD protection
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD105-B102EL/02ELS
med. PRF
±5.5
±25
±14@±16
±20@±30
0.35
2
5
8.5
11
0.3
1
TSLP-2-20
TSSLP-2-4
ESD108-B1-CSP0201
Q2/CJ14
med. PRF
±5.5
±25
±20@±16
±31@±30
0.76
1
2.5
8.5
11
0.25
1
ESD112-B102EL/02ELS
med. PRF
±5.3
±20
±29@±16
±44@±30
1.0
1
3
11
15
0.2
1
ESD101-B102EL/02ELS
med. PRF
AN327
±5.5
±12
±18@±8
±30@±16
1.5
-
-
0.10
1
ESD103-B102EL/02ELS
higher. PRF
AN327
±15
±10
±36@±8
±48@±16
1.8
-
-
0.10
1
TSLP-2-20
TSSLP-2-4
TSLP-2-20
TSSLP-2-4
TSLP-2-20
TSSLP-2-4
BDTIC
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website www.infineon.com/protection/low-cap.esd-diodes for alternative devices.
www.BDTIC.com/infineon
58
RF and Protection Devices
Application Guide for Mobile Communication
6
FM Radio and Mobile TV
FM Radio has a long history to its credit starting from its development in 1933. Today, FM radio is an integral
part of almost all mobile phones. In a common mobile phone, the headset cable serves as an antenna for FM
reception, wherein the antenna size (~75 cm) is a bit relaxed.
There is a clear market trend to be able to use FM radio also without the headset cable. Then, antenna needs to
be integrated inside the phone. But in this case, the space constraint poses a challenge on the antenna design.
Shrinking the size of the antenna introduces a high loss in the system which deteriorates the receiver
BDTIC
performance, namely the receiver sensitivity. The major FM topologies widely used in the market are:
- FM RX only (Application 1): where only the FM radio receive function is implemented
- FM TX and RX (Application 2): where the FM path is not only used for FM radio reception but also for FM
signal transmission. It enables music streaming from the mobile phone to other FM receive systems such
as car radio and home hi-fi system.
Infineon’s low noise amplifiers (LNA) for mobile FM application include MMICs BGB707L7ESD, BGB717L7ESD
and BGB719N7ESD as well as low cost transistors such as BFR340F. They solve the problem of the short FM
antenna in mobile phones through better impedance match between the FM antenna and the FM receiver,
therefore, they can keep the system signal-to-noise ratio as good as the headset.
BGB707L7ESD offers the flexibility to fit various antenna and receiver input impedances. The highly integrated
BGB719N7ESD is the compact solution which offers the best performance for high ohmic antenna and 50 Ohm
receiver input impedance. The integrated active biasing enables consistent stable operation with varying
temperature and process variations. It finds its application in all kinds of mobile devices like mobile phones,
PDAs, portable FM radio, MP3 players etc.
Putting Infineon’s ESD protection diode from ESD-112-B1-02ELS and ESD103-B1-02EL/02ELS, series in front
of the LNA increases the system’s ESD robustness up to 8 kV contact discharge (IEC61000-4-2) at the RF input.
The diode has a parasitic capacitance of only 0.2 pF.
Infineon’s SPDT switch BGS12 series can be used to switch between the headset and the embedded antenna
in Application 1 or between transmit and receive FM functions in Application 2.
Please visit our website www.infineon.com/fmradio for more details on the latest product and application
information for FM radio.
www.BDTIC.com/infineon
59
RF and Protection Devices
Application Guide for Mobile Communication
6.1
FM Radio with Embedded Antenna
Application 1: for only FM Reception
Headset as FM
Antenna
Embedded
FM Antenna
76 – 108 MHz
ESD
Diode
RX
SPDT
Switch
FM Receiver IC
BDTIC
LNA
ESD
Diode
Application 1: FM reception only
Headset as FM
Antenna
SPDT
Switch
ESD
Diode
Embedded
FM Antenna
76 – 108 MHz
RX
FM Transceiver IC
SPDT
Switch
LNA
TX
ESD
Diode
Application 2: FM transmit/receive function block
www.BDTIC.com/infineon
60
RF and Protection Devices
Application Guide for Mobile Communication
RF MMIC LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
BGA728L7
AN1672)
14.3
1.3
BGB719N7ESD
AN2551)
TR10622)
13.5
14.5
1.2
1.7
BGB707L7ESD
AN1771)
AN1812)
12.0
15.0
1.0
1.3
BGB717L7ESD
AN1761)
12.0
BGB741L7ESD
TR1302)
16.1
Notes:
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
-9
-7
2.8
5.7
TSLP-7-1
-6
-11
-14
-16
3.0
3.0
2.8
2.8
TSNP-7-6
-5
-10
-12
-6
3.0
2.8
3.0
4.2
TSLP-7-1
1.0
-5
-12
3.0
3.0
TSLP-7-1
1.2
-8.9
0.3
3.0
6.0
TSLP-7-1
1) for high ohmic antenna;
2) for 50 Ω antenna;
3) Please visit our website www.infineon.com/rf-mmic for alternative devices.
BDTIC
RF Transistor LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BFR340F
AN2001)
AN2052)
15.5
15.6
1.4
1.9
-27
-25
-16
-16
1.8
1.8
2.9
3.0
TSFP-4
BFP460
AN2032)
AN2042)
14.9
17.1
1.1
1.2
-26
-24
-17
-16
1.8
2.6
3.0
4.2
SOT343
BFP540ESD
AN2022)
13.5
1.0
-26
-16
1.8
3.0
SOT343
Notes:
1) for high ohmic antenna;
2) for 50 Ω antenna;
3) Please visit our website www.infineon.com/rf-transistors for alternative devices.
RF CMOS Switches
Product
Type
App.
Note
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation
[dB]
P-0.1dB3)
[dBm]
Pin,max4)
[dBm]
Ctrl.5)
Int.
Package
BGS12AL7-4
BGS12AL7-6
SPDT
AN175
2.4…3.6
1.4…3.6
0.3
50
> 21
21
GPIO
TSLP-7-4
TSLP-7-6
BGS12SL6
SPDT
AN300
2.4…3.6
1.4…3.6
0.2
36
>27.5
27.5
GPIO
TSLP-6-4
BGS12SN6
SPDT
AN332
1.8…3.3
1.4…3.3
0.2
40
>30
30
GPIO
TSNP-6-2
BGS13SL9
SP3T
AN301
2.4…3.6
1.5…3.6
0.3
37
>30
30
GPIO
TSLP-9-3
Notes:
1) Digital Control Voltage;
3) 0.1dB compression point;
5) Control Interface;
2) IL = Insertion Loss;
4) Maximum input power;
6) Please visit our website www.infineon.com/rfswitches for alternative devices.
TVS Diodes for antenna ESD protection
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD105-B102EL/02ELS
med. PRF
±5.5
±25
±14@±16
±20@±30
0.35
2
5
8.5
11
0.3
1
TSLP-2-20
TSSLP-2-4
ESD108-B1-CSP0201
med. PRF
±5.5
±25
±20@±16
±31@±30
0.76
1
2.5
8.5
11
0.25
1
ESD112-B102EL/02ELS
med. PRF
±5.3
±20
±29@±16
±44@±30
1.0
1
3
11
15
0.2
1
ESD101-B102EL/02ELS
med. PRF
AN327
±5.5
±12
±18@±8
±30@±16
1.5
-
-
0.10
1
ESD103-B102EL/02ELS
higher. PRF
AN327
±15
±10
±36@±8
±48@±16
1.8
-
-
0.10
1
Notes:
TSSLP-2-4
TSLP-2-20
TSSLP-2-4
TSLP-2-20
TSSLP-2-3
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website www.infineon.com/protection/low-cap.esd-diodes for alternative devices.
www.BDTIC.com/infineon
61
RF and Protection Devices
Application Guide for Mobile Communication
6.2
TV Reception in Mobile Phones
Mobile phone today has become an all-in-one device. It includes not only wireless functions for voice and data
but also entertainment features. Mobile TV is one of the most fascinating features. It brings live news and
entertainment programs onto the phone display and enables people not to miss their favorite programs.
Infineon’s mobile TV LNAs BGA728L7 and BGB741L7 are especially designed for the mobile TV reception with
50 or 75 Ohm interfaces while our RF transistors offer cost effective solutions to improve the signal-to-noise
ratio and therefore the quality of the TV reception. Those LNAs together with Infineon’s ESD protection diode
from ESD-112-B1-02ELS and ESD103-B1-02EL/02ELS, series improve the system’s ESD performance up to 8
BDTIC
kV contact discharge (IEC61000-4-2) at the antenna input. The parasitic capacitance is only 0.2 pF.
Analog TV/DVB-T/CMMB
T-DMB/ISDB-T/DVB-H
40 – 860 MHz
Silicon-Tuner
GSM
Rejection
Filter
ESD
Diode
LNA
Diplexer
RF MMIC LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGA728L71)
AN163
15.8/-5.22)
1.3/5.52)
-10/+32)
-7/+162)
2.8
5.8/0.52)
TSLP-7-1
BGB707L7ESD
AN232
13.0
1.5
-7
-11
3.0
2.9
TSLP-7-1
BGB741L7ESD
AN206
15.0
1.5
-8
-3
2.8
5.4
TSLP-7-1
Current
[mA]
Package
Notes:
1) LNA with two gain modes (high-gain/low-gain);
3) Please visit our website www.infineon.com/rf-mmic for alternative devices.
2) Values in high-gain (HG) / low-gain (LG) mode;
RF Transistor LNAs
Product
Application
Note
BFP640ESD
TR1081
BFP540ESD
AN142
14.2
1.5
-21
-13
5.0
3.3
SOT343
BFR380L3
AN221
10.5
2.2
-2
+7
3.3
16.8
TSLP-3-1
Note:
Gain
[dB]
IP-1dB
[dBm]
NF
[dB]
IIP3
[dBm]
Supply
[V]
on request
SOT343
Please visit our website www.infineon.com/rf-transistors for alternative devices.
TVS Diodes for antenna ESD protection
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD105-B102EL/02ELS
med. PRF
±5.5
±25
±14@±16
±20@±30
0.35
2
5
8.5
11
0.3
1
TSLP-2-20
TSSLP-2-4
ESD108-B1-CSP0201
med. PRF
±5.5
±25
±20@±16
±31@±30
0.76
1
2.5
8.5
11
0.25
1
ESD112-B102EL/02ELS
med. PRF
±5.3
±20
±29@±16
±44@±30
1.0
1
3
11
15
0.2
1
Notes:
TSLP-2-20
TSSLP-2-4
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website www.infineon.com/protection/low-cap.esd-diodes for alternative devices.
www.BDTIC.com/infineon
62
RF and Protection Devices
Application Guide for Mobile Communication
6.3
TV Reception with Band Selection Switch
Analog TV/DVB-T/CMMB
T-DMB/ISDB-T/DVB-H
40 – 860 MHz
LPF
UHF
LNA
SPDT
Switch
ESD
Diode
Tuner IC
BDTIC
LPF
VHF
RF MMIC LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGA728L71)
AN163
15.8/-5.22)
1.3/5.52)
-10/+32)
-7/+162)
2.8
5.8/0.52)
TSLP-7-1
BGB707L7ESD
AN232
13.0
1.5
-7
-11
3.0
2.9
TSLP-7-1
BGB741L7ESD
AN206
15.0
1.5
-8
-3
2.8
5.4
TSLP-7-1
Current
[mA]
Package
Notes:
1) LNA with two gain modes (high-gain/low-gain);
3) Please visit our website www.infineon.com/rf-mmic for alternative devices.
2) Values in high-gain (HG) / low-gain (LG) mode;
RF Transistor LNAs
Product
Application
Note
BFP640ESD
TR1081
BFP540ESD
AN142
14.2
1.5
-21
-13
5.0
3.3
SOT343
BFR380L3
AN221
10.5
2.2
-2
+7
3.3
16.8
TSLP-3-1
Note:
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
on request
SOT343
Please visit our website www.infineon.com/rf-transistors for alternative devices.
RF CMOS Switches
Product
Type
App.
Note
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation
[dB]
P-0.1dB3)
[dBm]
Pin,max4)
[dBm]
Ctrl.5)
Int.
Package
BGS12AL7-4
BGS12AL7-6
SPDT
AN175
2.4…3.6
1.4…2.8
0.35
> 32
> 21
21
GPIO
TSLP-7-4
TSLP-7-6
BGS12SL6
SPDT
AN300
2.4…3.6
1.4…2.8
0.37
> 40
>27.5
27.5
GPIO
TSLP-6-4
BGS12SN6
SPDT
AN332
1.8…3.3
1.35…3.3
0.25
> 40
>30
30
GPIO
TSNP-6-2
Notes:
1) Digital Control Voltage;
3) 0.1dB compression point;
5) Control Interface
2) IL = Insertion Loss;
4) Maximum input power;
6) Please visit our website www.infineon.com/rfswitches for alternative devices.
www.BDTIC.com/infineon
63
RF and Protection Devices
Application Guide for Mobile Communication
TVS Diodes for antenna ESD protection
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD105-B102EL/02ELS
med. PRF
±5.5
±25
±14@±16
±20@±30
0.35
2
5
8.5
11
0.3
1
TSLP-2-20
TSSLP-2-4
ESD108-B1-CSP0201
Q2/CJ14
med. PRF
±5.5
±25
±20@±16
±31@±30
0.76
1
2.5
8.5
11
0.25
1
ESD112-B102EL/02ELS
med. PRF
±5.3
±20
±29@±16
±44@±30
1.0
1
3
11
15
0.2
1
Notes:
TSLP-2-20
TSSLP-2-4
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website www.infineon.com/protection/low-cap.esd-diodes for alternative devices.
BDTIC
www.BDTIC.com/infineon
64
RF and Protection Devices
Application Guide for Mobile Communication
6.4
FM and TV Reception in Mobile Phones with Band Selection SP3T switch
Analog TV/DVB-T/CMMB/
T-DMB/ISDB-T/DVB-H
SP3T
40 – 860 MHz
LPF
Switch
UHF
LNA
Tuner IC
LPF
VHF
ESD
Diode
BDTIC
FM
Tuner IC
LPF
RF MMIC LNAs
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGA728L71)
AN163
15.8/-5.22)
1.3/5.52)
-10/+32)
-7/+162)
2.8
5.8/0.52)
TSLP-7-1
BGB707L7ESD
AN232
13.0
1.5
-7
-11
3.0
2.9
TSLP-7-1
BGB741L7ESD
AN206
15.0
1.5
-8
-3
2.8
5.4
TSLP-7-1
Current
[mA]
Package
Notes:
1) LNA with two gain modes (high-gain/low-gain);
3) Please visit our website www.infineon.com/rf-mmic for alternative devices.
2) Values in high-gain (HG) / low-gain (LG) mode;
RF Transistor LNAs
Product
Application
Note
BFP640ESD
TR1081
BFP540ESD
AN142
14.2
1.5
-21
-13
5.0
3.3
SOT343
BFR380L3
AN221
10.5
2.2
-2
+7
3.3
16.8
TSLP-3-1
Note:
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
on request
SOT343
Please visit our website www.infineon.com/rf-transistors for alternative devices.
RF CMOS Switches
Product
Type
App.
Note
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation
[dB]
P-0.1dB3)
[dBm]
Pin,max4)
[dBm]
Ctrl.5)
Int.
Package
BGS13SL9
SP3T
AN301
2.4…3.6
1.5…3.6
0.35
37
>30
30
GPIO
TSLP-9-3
Notes:
1) Digital Control Voltage;
3) 0.1 dB compression point;
5) Control Interface
2) IL = Insertion Loss;
4) Maximum input power;
6) Please visit our website www.infineon.com/rfswitches for alternative devices.
TVS Diodes for antenna ESD protection
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD105-B102EL/02ELS
med. PRF
±5.5
±25
±14@±16
±20@±30
0.35
2
5
8.5
11
0.3
1
TSLP-2-20
TSSLP-2-4
ESD108-B1-CSP0201
Q2/CJ14
med. PRF
±5.5
±25
±20@±16
±31@±30
0.76
1
2.5
8.5
11
0.25
1
ESD112-B102EL/02ELS
med. PRF
±5.3
±20
±29@±16
±44@±30
1.0
1
3
11
15
0.2
1
Notes:
TSLP-2-20
TSSLP-2-4
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website www.infineon.com/protection/low-cap.esd-diodes for alternative devices.
www.BDTIC.com/infineon
65
RF and Protection Devices
Application Guide for Mobile Communication
7
Near-Field Communication
Near-Field Communication (NFC) is a short-range high frequency wireless communication technology which
enables the exchange of data between devices over about a 10-20 cm distance. The technology is a simple
extension of the ISO/IEC 14443 proximity-card standard (proximity card, RFID) that combines the interface of a
smartcard and a reader into a single device. A NFC device can communicate with both existing ISO/IEC 14443
smartcards and readers, as well as with other NFC devices, and is thereby compatible with existing contactless
infrastructure already in use for public transportation and payment. It operates within the globally available and
unlicensed radio frequency ISM band (Industrial, Scientific and Medical) of 13.56 MHz. Plenty of applications
BDTIC
are present in the market yet, or will enter the market soon.
 Mobile Commerce:
-
Mobile ticketing - for airplanes, for public transport, for concerts/events
-
Mobile payment - the device acts as a debit/ credit payment card
-
Electronic money - like a stored value card
 Proof of Identity:
-
Access control for buildings, or IT equipments
-
Electronic keys - car keys, house/office keys, hotel room keys, etc.
NFC can be used to configure and initiate other wireless network connections such as Bluetooth, WiFi. The time
consuming configuration procedure for identification to a Bluetooth or WiFi system is reduced by a “one touch”
of two mobiles equipped with NFC devices. To provide the required security level for all these applications, the
NFC modem is combined with a secure controller (NFC module). In a mobile phone the NFC module is also
linked to the SIM card.
In a mobile phone the NFC front-end is often separated into the TX driver with the EMC filter and RX signal
decoupling and the high impedance 13.56 MHz resonator. The 13.56 MHz resonator includes the loop antenna
(resonator´s inductance) and a parallel capacitor (resonator’s capacitance).
Because of the loop antenna size, the 13.56 MHZ resonance circuit is located often in the bottom shell of the
mobile, which can be removed by the user. An interface is generated inside the NFC front-end which then
becomes ESD critical. A proper ESD protection becomes mandatory to protect the EMI filter and the driver of
the NFC front-end, located on main mobile phone PCB.
NFC
Transceiver IC
Buffer Amp
13.56 MHz
EMI-LP
filter
antenna
matching
ESD
Diode
LNA
loop antenna
Main PCB / Top shell
www.BDTIC.com/infineon
66
RF and Protection Devices
Application Guide for Mobile Communication
RF MMIC Buffer Amplifier
Notes:
Product
Application
Note
Gain
[dB]
NF
[dB]
OP-1dB
[dBm]
OIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGA616
TR10651)
17.5
2.9
16.5
28
3.3
62
SOT343
1) on request;
2)Please visit our website http://www.infineon.com/rftransistors for alternative devices.
RF MMIC LNA
Product
Application
Note
Gain
[dB]
NF
[dB]
IP-1dB
[dBm]
IIP3
[dBm]
Supply
[V]
Current
[mA]
Package
BGA420
TR10651)
17.7
1.9
-19.5
-3
3.3
8.1
SOT343
BDTIC
Notes:
1) on request;
2) Please visit our website http://www.infineon.com/rfmmics for alternative devices.
TVS Diodes for antenna ESD protection
Product
App.
Note
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD110-B1-02ELS
ESD18VU1B02LRH/02LS
NFC-RF
AN244
±18
±15
±28@16
±34@25
0.60
1
17-
0.3
1
TSSLP-2-4
TSLP-2-17
TSSLP-2-1
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our website www.infineon.com/protection/low-cap.esd-diodes for alternative devices.
www.BDTIC.com/infineon
67
RF and Protection Devices
Application Guide for Mobile Communication
8
ESD and ESD/EMI Interface Protection
In today’s electronics, being faster, smaller and smarter creates profitability by enabling new and better
applications. The race to pack more and more high-speed functions in a smaller space accelerates
miniaturization roadmaps. However, the downscale of semiconductor chips together with the increase of doping
levels results in a dramatic reduction of the thin gate oxide layer and the width of the pn-junction in
semiconductor chips. This, in combination with greater circuit population, increases the susceptibility of the
semiconductor chip to ESD.
The subsequent failures of the electronic equipment can be noticed as hard failures, latent damage or
temporary malfunction. Hard failures are easier to spot, and in general require the failed device to be replaced.
BDTIC
In the best case the failure will be detected before the equipment leaves the factory and customers will never
receive it. Failures leading to temporary malfunction of equipment or latent failures are quite common and very
difficult to detect or trace in the field. Temporary malfunctions may go unreported but can result in negative
customer impressions as the user may need to reset the equipment. A product recall for swapping or repairing
due to ESD failures may cause the company a cost several times higher than the cost of the device itself.
An efficient system design normally includes the implementation of a shielded chassis in order to minimize ESD
risks. Nevertheless, ESD strikes represent a permanent threat to device reliability as they can easily find a way
to bypass the shielded chassis and be injected into the IC/ASICs. Connectors and antennas exposed to the
outside world are possible entry points of electrostatic discharges generated by end users. The only way to
ensure stable operation and maximum reliability at the system level is to ensure that equipment is properly
protected against electrostatic discharge and transients by an external protection device.
Infineon’s Value Proposition
Improve ESD immunity at system level by providing first-class protection beyond IEC61000-4-2 level 4
standard.
- Superior multi-strike absorption capability.
- Safe and stable clamping voltages to protect even the most sensitive electronic equipment.
- Protection devices that fully comply with high-speed signal quality requirements.
- Array solutions that boost space saving in the board and reduce part count.
- Easy-to-use single devices for space-constrained applications.
- Discrete components that drain extremely low leakage currents and help to extend battery duration.
- Packages enabling easy PCB layout.
For detailed information about our TVS diode portfolio and their applications, please refer to our Application
Guide – Part 3: Protection or our ESD Protection Brochure www.infineon.com/tvs.brochure. You can also visit
our website for protection devices: www.infineon.com/protection.
www.BDTIC.com/infineon
68
RF and Protection Devices
Application Guide for Mobile Communication
8.1
Interface Protection with Discrete TVS Protection Diodes
Infineon offers various high performance types of discrete TVS protection devices for mobile phone applications
to prevent our customers’ mobile phones from ESD attacks. Following is a short overview of the available TVS
protection devices from Infineon for various RF and digital interfaces of mobile phones to the external world. For
detailed information about our TVS diode portfolio and their applications, please refer to our Application Guide
for Protection or our ESD Protection Brochure www.infineon.com/tvs.brochure. You can also visit our website
for protection devices: www.infineon.com/protection.
BDTIC
Interface protection with discrete ESD TVS diodes
www.BDTIC.com/infineon
69
RF and Protection Devices
Application Guide for Mobile Communication
8.1.1
General Purpose TVS Diodes e.g. for Human Interface Devices, Audio Ports
and SIM-Card / µSD card ESD Protection
In a modern mobile phone there are a lot of access points open to external for ESD strikes to reach the inner
PCB, such as the charging port, audio ports (line out, headset jack) and data interfaces (USB).
Another very severe path for the ESD strike is bottoms, air-gaps in the enclosure or the microphone/speaker.
Often the point of entrance for the ESD strike is not obvious.
To provide proper ESD protection for the inner print circuit board, it is mandatory to place fast responding TVS
protection diodes at dedicated locations. Depending on the position to be protected, for example where the
signal frequency is low and therefore device capacitance does not matter, general purpose TVS diodes can be
BDTIC
used. They are listed in the table “TVS ESD Diodes for general purpose application”.
For high speed data lines dedicated low capacitance TVS diodes must be used to avoid any impact on signal
integrity. Please refer to chapter “High-Speed Digital Interface Switching and Protection” regarding these low
capacitance TVS diodes.
TVS ESD Diodes for General Purpose Application
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD204-B1
02EL/02ELS
General
purpose
+14/-8
±18
+28/-27@±16
+35/-35@±30
0.5/0.6
1
-1
17
-23
4
1
TSLP-2-19
TSSLP-2-3
ESD5V3L1B-02LRH
General
purpose
+5.3
±20
+10/-12@±16
+13/-17@±30
0.22
0.25
1
2.5
8.5
10
5
1
TSLP-2-17
ESD205-B1-02ELS
General
purpose
±5.3
±20
10/-12@±16
13/-17@±30
0.22
0.35
1
2.5
8.5
10
5
1
TSSLP-2-3
ESD5V0S5US
General
purpose
+5.0
±30
±10@±16
±14@±30
0.25
10
10.5
70
5
SOT363
ESD207-B1
02EL/02ELS
General
purpose
±3.3
±30
±7@±16
±9@±30
0.13
1
8
4.5
6.8
14
1
TSLP-2-19
TSSLP-2-3
ESD206-B1
02EL/02ELS
General
purpose
±5.5
±30
±9@±16
±12@±30
0.13
0.16
1
6
7.5
9.6
12
1
TSLP-2-19
TSSLP-2-3
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage www.infineon.com/protection/low-cap.esd-diodes for alternative devices.
www.BDTIC.com/infineon
70
RF and Protection Devices
Application Guide for Mobile Communication
8.2
Interface Protection with Integrated ESD/EMI Devices
With increasing number of wireless functions integrated into the mobile phones, we have to have a look on
immunity against ESD, and also on robustness against EMI. This is mandatory to ensure the functionality of the
mobile phones.
For application where a high number of I/Os must be protected regarding ESD and EMI a smart integration of
the required protection features keeps the PCB space small and the layout easy.
SD and µSD card provides six high speed lines and one Vcc line. In a lot of applications these lines are exposed
to ESD events during the mobile phone use or especially during the insertion / remove of the SD / µSD card.
BDTIC
State of the art SD / µSD card are working in UHS-I Mode, resulting in 208 MHz clock rate. To avoid any impact
on signal integrity (SI) or rise/fall time, the device capacitance must be minimized. The required EMI protection
is provided by the EMI resistor in conjunction with the load capacitance present in the SD / µSD link.
The Infineon BGF148 bases on a “PI” structure with a 20 Ohm EMI resistor. Line capacitance is about 1 pF. In
combination with the load capacitance of 10 pF max (according µSD-card spec.) the EMI filter response is
generated.
BGF148
µSD Card
µSD Card Connector
DAT2
DAT2
DAT3
DAT3
CMD
CMD
Vcc
Vcc
CLK
CLK
Vcc
15kV
CLK
2kV
CMD
DAT0
DAT1
LPF
GND
GND
DAT2
DAT0
DAT0
DAT3
DAT1
DAT1
Flash
Controller IC
Integrated ESD/EMI devices dedicated for HS and UHS I SIM Card
Integrated ESD/EMI Protection Device
Notes:
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
RESD3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
BGF148
(µ)SD Card
Interface
±5.5
±15
8.5@1
9@16
20
-
-
1.2
7
TSNP-14-2
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage @ output, for input 100 ns pulse length;
3) ESD resistor between input and output TVS diode;
4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs);
6) Typical line capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage www.infineon.com/protection/low-cap.esd-diodes for alternative devices.
www.BDTIC.com/infineon
71
RF and Protection Devices
Application Guide for Mobile Communication
8.3
Reverse Polarity Protection (RPP) for USB Charger
In most battery operated portable equipment, it is possible to install the battery in reverse direction
leading to accidental short circuits and other fatal errors to the equipment. Today’s battery terminals are
marked with colors and the terminal posts itself are mechanically different, nevertheless the possibility
for reverse battery is still present, at least for short connection duration. For these systems, a designer
must ensure that any flow of reverse current is low enough to avoid damaging the circuit or the battery.
A variety of circuits can be used to achieve this. The easiest way for reverse battery protection would be
a series diode in the positive supply line of the electronic control unit (ECU) accordingly the load.
DC ADAPTER
BDTIC
D1
USB
Charger
IC
USB POWER
ICHG
SYSTEM
+
MOSFET
BATTERY
MOSFET
AF Schottky Diodes for RPP
Product1)
Application
Note
BAS4002A-02LRH
BAS3005A-02LRH
BAS3010S-02LRH
Notes:
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
on request
7
5
330
10
470
200
0.5
5
TSLP-2-17
on request
10
5
260
10
450
500
15
5
TSLP-2-17
on request
10
5
340
100
570
1000
30
10
TSLP-2-17
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website www.infineon.com/rf-mixer-detector-schottky-diodes for alternative devices.
www.BDTIC.com/infineon
72
RF and Protection Devices
Application Guide for Mobile Communication
9
High-Speed Digital Interface Switching and Protection
With increasing number of interfaces to external world in a mobile phone, the space constraint is getting
tougher. Port sharing for various functions is mandatory to reduce the count of interfaces. Following picture
shows an example of port sharing of Universal Series Bus (USB) and Mobile High-Definition Link (MHL) realized
through a common Micro USB AB port together with a DPDT switch.
Infineon offers various solutions of integrated high-speed SPDT and DPDT CMOS switches as well as fast PIN
diodes for high-speed digital interface switching in mobile phones.
BDTIC
For more information, please visit our website: www.infineon.com/rfswitches or www.infineon.com/pindiodes.
You can also contact Infineon’s Regional Offices or one of Infineon Worldwide Distribution Partners in your area
USB
PHY
USB +
USB -
DPDT
Switch
MHL +
MHL/USB
MHL -
MHL
PHY
MICRO USB AB
to get direct design-in support you might need.
High-Speed CMOS Switches
Product
Type
Application
Note
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation3)
[dB]
P-0.1dB4)
[dBm]
BW5)
[GHz]
Package
BGS12AL7-4
BGS12AL7-6
SPDT
AN175
2.4…2.8
1.4…2.8
0.4/0.5
32/25
> 21
-
TSLP-7-4
TSLP-7-6
BGS22WL10
DPDT
AN302
2.4…3.6
1.2…VDD
0.4 / 0.5
> 41 / > 33
> 30
-
TSLP-10-1
BGS22W2L10
DPDT
AN308
2.4…3.6
1.2…VDD
0.3 / 0.5
>35 / >25
> 29
-
TSLP-10-1
Notes:
1) Digital Control Voltage;
2) IL = Insertion Loss at 1.0/ 2.0 GHz;
4) 0.1dB compression point;
5) Measured at 1 dB IL;
6) Please visit our website www.infineon.com/rfswitches for alternative devices.
3) Isolation at 1.0/ 2.0 GHz;
RF PIN Diode Switches
Product1)
Application
Note
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT3)
[pF]
@VR
[V]
τL4)
[ns]
Package
BAR90-098LRH D
BAR90-081LS
Q
BAR90-02LRH
TR10545)
1.3
3.0
0.8
10.0
0.25
1.0
750
TSLP-4-7
TSSLP-8-1
TSLP-2-7
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) The carrier life time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
6) Please visit our website www.infineon.com/rf-pin-diodes for alternative devices.
5) on request;
www.BDTIC.com/infineon
73
RF and Protection Devices
Application Guide for Mobile Communication
TVS ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD5V3U4U-HDMI
MIPI, HDMI,
USB2.0-HS
+5.3
±20
19@16
28@30
0.65
3
12
0.4
4
TSLP-9-1
ESD5V3U1U02LRH/02LS
MIPI, HDMI,
USB2.0-HS
+5.3
±20
19@16
28@30
0.65
3
12
0.4
1
TSLP-2-7
TSSLP-2-1
ESD114-B102LRH/02LS
Q2/CY14
MIPI, HDMI,
USB2.0-HS
+5.3
±20
19@16
28@30
0.65
3
12
0.4
1
TSLP-2-7
TSSLP-2-1
ESD5V3U2U
03LRH/03F
MIPI, HDMI,
USB2.0-HS
+5.3
±20
19@16
28@30
0.65
3
12
0.4
2
TSLP-3-7
TSFP-3
ESD3V3U4ULC
USB3.0-SS
MIPI, HDMI
+3.3
±20
8@16
11@30
0.2
1
3
4.8
6.2
0.35
4
TSLP-9-1
ESD102U4-05L
USB3.0-SS
MIPI, HDMI
+3.3
±20
8@16
11@30
0.2
1
3
4.8
6.2
0.35
4
TSLP-5-2
ESD3V3XU1US
USB3.0-SS
MIPI, HDMI
+3.3
±20
8@16
11@30
0.2
1
3
4.8
6.2
0.35
1
TSSLP-2-1
ESD102-U1-02ELS
USB3.0-SS
MIPI, HDMI
+3.3
±20
8@16
11@30
0.2
1
3
4.8
6.2
0.35
1
TSSLP-2-3
ESD5V5U5ULC
USB2.0-HS,
VCC
+5.5
±25
8.9@16
11.5@30
0.2
6
10
0.45
4
SC74
ESD5V3L1B-02LRH
USB2.0-FS,
VCC
±5.3
±20
10/-12@±16
13/-17@±30
0.22
0.35
1
2.5
8.5
10
5
1
TSLP-2-17
TSSLP-2-1
ESD205-B1-02ELS
USB2.0-FS,
VCC
±5.3
±20
10/-12@±16
13/-17@±30
0.22
0.35
1
2.5
8.5
10
5
1
TSSLP-2-2
ESD105-B102EL/02ELS
USB3.0-SS
±5.5
±25
±14@±16
±20@±30
0.35
2
5
8.5
11
0.3
1
TSLP-2-20
TSSLP-2-4
BDTIC
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic resistance (ON-resistance) evaluated with TLP measurement (100 ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20 μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20 μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage www.infineon.com/protection/low-cap.esd-diodes for alternative devices.
www.BDTIC.com/infineon
74
RF and Protection Devices
Application Guide for Mobile Communication
Abbreviations
Abbr.
Terms
Abbr.
Terms
Amp
Amplifier
IMT
International Mobile Telecommunications
AN
Application Note
IP
Internet Protocol
ANT
Antenna
IPD
Integrated Passive Device
ASIC
Application Specific Integrated Circuit
LDO
Low Drop Out
ASM
Antenna Switch Module
LG
Low Gain
BB
Baseband
LNA
Low Noise Amplifier
BER
Bit Error Rate
LO
Local Oscillator
BPF
Band Pass Filter
LPF
Low Pass Filter
BW
Bandwidth
LTE
Long-Term Evolution
CDMA
Code Division Multiple Access
LTE-A
LTE-Advanced
CMMB
Chinese Multimedia Mobile Broadcast
Mbps
Megabits per Second
COMPASS
Chinese Navigation Satellite System BeiDou
MG
Middle Gain
CSP
Chip-Scale-Package
MHL
Mobile High-Definition Link
DCS
Digital Cellular Service
MIPI
Mobile Industry Processor Interface
DPDT
Double Pole Double Throw
MMIC
Monolithic Microwave Integrated Circuit
DSDS
Dual SIM Dual Standby
MIMO
Multiple Input Multiple Output
DSSS
Direct Sequence Spread Spectrum
MOSFET
DVB-H
Digital Video Broadcast – Handheld
Metal-Oxide-Semiconductor Field Effect
Transistor
DVB-T
Digital Video Broadcast – Terrestrial
NF
Noise Figure
ECU
Electronic Control Unit
NFC
Near-Field Communication (13.56 MHz)
EDGE
Enhanced Data Rates for GSM Evolution
OFDM
Orthogonal Frequency Division Multiplexing
EMC
Electromagnetic Compatibility
OoB
Out of Band
EMI
Electromagnetic Interference
P2P
Point-to-Point
ESD
Electro-Static Discharge
PA
Power Amplifier
FEM
Front-End Module
PCS
Personal Communications Services
FEMiD
Front-End Module with Integrated Duplexers
PLL
Phase-Locked Loop
FHSS
Frequency-Hopping Spread Spectrum
PND
Personal Navigation Devices
FM
Frequency Modulation (76 – 108 MHz)
QAM
Quadrature Amplitude Modulation
FWLP
Fine Pitch Wafer Level Package
RF
Radio Frequency
GLONASS
Global Orbiting Navigation Satellite System
RFFE
RF Front-End Control Interface
GNSS
Global Navigation Satellite System
RoHS
Restriction of Hazardous Substances
GPIO
General Purpose Input/Output
RPD
RF & Protection Devices
GPS
Global Positioning System (1575.42 MHz)
RPP
Reverse Polarity Protection
GSM
Global System for Mobile Communication
RX
Receiver
HDMI
High-Definition Multimedia Interface
SAR
Search and Rescue
HG
High Gain
SAW
Surface Acoustic Wave
HiPAC
High Performance Actives & Passives on Chip
SD Card
Secure Digital Memory Card
HSDPA
High-Speed Downlink Packet Access
SIM
Subscriber Identity Module
HSUPA
High-Speed Uplink Packet Access
SOT
Small Outline Transistor Package
HSMM
High-Speed Multimedia
SPDT
Single Pole Double Throw
I²C
Inter-Integrated Circuit (Bus)
SPI
Serial Peripheral Interface
I/F
Interface
SV-LTE
Simultaneous Voice and LTE
IL
Insertion Loss
SW
Switch
IMD
Intermodulation Distortion
SWP
Hot Swap
T-DMB
Terrestrial Digital Multimedia Broadcast
BDTIC
www.BDTIC.com/infineon
75
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RF and Protection Devices
Application Guide for Mobile Communication
Abbreviations
Abbr.
Terms
Abbr.
Terms
TD-SCDMA
Time Division-Synchronous Code Division
Multiple Access
UMTS
Universal Mobile Telecommunications System
TD-LTE
Time Division Long-Term Evolution
USB
Universal Serial Bus
TLP
Transmission-Line-Pulse (Measurement)
VCO
Voltage Controlled Oscillator
TR
Technical Report
VHF
Very High Frequency (30 – 300MHz)
TRX
Transceiver
VQFN
Very Thin Quad Flat Non-leaded Package
TSFP
Thin Small Flat Package
VoIP
Voice over IP
T(S)SLP
Thin (Super) Small Leadless Package
W-CDMA
Wideband-Code Division Multiple Access
TSNP
Thin Small Non Leaded Package
WiMAX
Worldwide Interoperability for Microwave Access
TTFF
Time to First fix
WLAN
Wireless Local Area Network
TVS
Transient Voltage Suppression
µSD
Micro Secure Digital Memory
TX
Transmitter
UHF
Ultra High Frequency (470 – 860MHz)
BDTIC
Alphanumerical List of Symbols
Symbol
Term
Unit
Symbol
Term
Unit
CT
Total Diode capacitance
[pF]
OP-1dB
Output 1dB compression point
[dBm]
ESD
Voltage of ESD pulse
[kV]
P-0.1dB
0.1dB compression point
[dBm]
IF
Forward current
[mA]
Pin,max
Maximum input power
[dBm]
IR
Reserve current
[µA]
Rdyn
Dynamic resistance
[Ω]
IPP
Maximum peak pulse current
[A]
rF
Differential forward resistance
[Ω]
IIP3
Input 3 intercept point
[dBm]
VCL
Clamping voltage
[V]
IL
Insertion loss
[dB]
Vctrl
Digital control voltage
[V]
IMD2
2 order intermodulation distortion
[dBm]
Vdd
DC supply voltage
[V]
IP-1dB
Input 1dB compression point
[dBm]
VF
Forward voltage
[mV]
LDO
Low drop out
[V]
VR
Reverse voltage
[V]
NF
Noise figure
[dB]
VRWM
Reverse working voltage
[V]
OIP3
Output 3 intercept point
[dBm]
τL
Storage time
[ns]
rd
nd
rd
www.BDTIC.com/infineon
76
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06.04.2014 17:50:36
RF and Protection Devices
Application Guide for Mobile Communication
Package Information
Package (JEITA-code)
X
L×W×H
PIN-Count
All products are available in green (RoHS compliant).
All Dimensions in mm
SC74 (-)
SOT23 ( - )
SOT343 (SC-82)
SOT323 (SC-70)
SOT143 (SC-61)
BDTIC
6
2.9 × 1.6 × 1.15
3
SOT363 (SC-88)
6
2.0 × 2.1 × 0.9
0.62 × 0.32 × 0.31
1.0 × 0.6 × 0.31
1.2 × 0.6 × 0.4
2.0 × 1.3 × 0.4
1.0 × 0.6 × 0.31
4
1.2 × 0.8 × 0.39
2.3 × 1.5 × 0.4
1.4 × 1.2 × 0.55
0.62 × 0.32 × 0.31
3
1.0 × 0.6 × 0.4
1.1 × 0.7 × 0.4
1.4 × 1.26 × 0.39
1.0 × 0.6 × 0.4
1.0 × 0.6 × 0.39
3
1.0 × 0.6 × 0.39
1.1 × 0.9 × 0.4
8
1.3 × 0.74 × 0.31
0.62 × 0.32 × 0.31
TSLP-2-17 ( - )
2
1.0 × 0.6 × 0.39
TSLP-3-9 ( - )
3
TSLP-6-3 ( - )
6
2.0 × 2.1 × 0.9
TSSLP-2-1 ( - )
2
TSLP-3-7 ( - )
TSLP-7-6 ( - )
7
4
TSLP-2-7 ( - )
2
TSLP-6-2 ( - )
6
2.0 × 2.1 × 0.9
TSLP-2-1 ( - )
2
TSLP-3-1 (SC-101)
TSLP-7-4 ( - )
7
3
TSSLP-2-4 ( - )
2
TSLP-4-7 ( - )
TSLP-7-1 ( - )
7
0.62 × 0.32 × 0.31
2.9 × 2.4 × 1.0
TSFP-4 ( - )
4
TSLP-2-20 ( - )
2
TSLP-4-4 ( - )
4
1.2 × 1.2 × 0.55
TSSLP-2-3 ( - )
2
TSLP-2-19 ( - )
2
4
TSFP-3 ( - )
3
TSSLP-2-2 ( - )
2
2.9 × 2.4 × 1.1
1.0 × 0.6 × 0.31
TSLP-6-4 ( - )
6
TSSLP-8-1
1.1 × 0.7 × 0.3
TSLP-9-1 ( - )
9
2.3 × 1.0 × 0.31
www.BDTIC.com/infineon
77
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RF and Protection Devices
Application Guide for Mobile Communication
TSLP-9-3 ( - )
9
1.15 × 1.15 × 0.31
TSLP-10-1
10
WLP-11-4 ( - )
TSLP-16-1 ( - )
16
2.3 × 2.3 × 0.39
WLP-8-10 ( - )
8
TSNP-6-2
FWLP-6-1
1.15 × 1.15 × 0.6
WLP-8-11 ( - )
8
1.2 × 1.2 × 0.6
TSNP-7-2 ( - )
TSNP-7-1 ( - )
BDTIC
11
1.55 × 1.15 × 0.6
6
TSNP-7-6
7
1.55 × 1.35 × 0.39
1.4 × 1.26 × 0.39
0.778×0.528×0.34
6
TSNP-7-10
7
2.3 × 1.7 × 0.73
1.1 × 0.7 × 0.375
7
TSNP-14 ( - )
14
1.95 × 1.8 × 0.375
2.0 × 1.3 × 0.375
7
2.0 × 1.3 × 0.4
TSNP-16-1
16
2.3 × 2.3 × 0.39
www.BDTIC.com/infineon
78
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06.04.2014 17:50:36
RF and Protection Devices
Application Guide for Mobile Communication
Support Material
Data Sheets / Application Notes / Technical Reports
www.infineon.com/rfandprotectiondevices
Products:
- RF CMOS Switches
www.infineon.com/rfswitches
- RF MMICs
www.infineon.com/rfmmics
- RF Transistors
www.infineon.com/rftransistors
- RF Diodes
www.infineon.com/rfdiodes
- PIN Diodes
www.infineon.com/pindiodes
- Schottky Diodes
www.infineon.com/schottkydiodes
- Varactor Diodes
www.infineon.com/varactordiodes
- ESD/EMI Protection Devices
www.infineon.com/tvsdiodes
BDTIC
Brochures:
- Selection Guide
www.infineon.com/rpd_selectionguide
- Application Guide for Protection
www.infineon.com/rpd_appguide_protection
- Application Guide for Consumer Applications
www.infineon.com/rpd_appguide_consumer
- Application Guide for Industrial Applications
www.infineon.com/rpd_appguide_industrial
- ESD Protection Solutions – Consumer and Wireless
Communication
www.infineon.com/tvs.brochure
- GPS Front-End Components for Mobile and Wireless
Applications
www.infineon.com/gps
Sample Kits
www.infineon.com/rpdkits
Evaluation Boards
For more information please contact your sales counterpart at
Infineon.
www.BDTIC.com/infineon
79
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06.04.2014 17:50:36
Ask Infineon. Get connected with the answers.
Infineon offers its toll-free 0800/4001 service hotline as one central number,
available 24/7 in English, Mandarin and German.
Our global connection service goes way beyond standard switchboard
services by offering qualified support on the phone. Call us!
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„„ Direct access .......... +49 89 234-0 (interconnection fee, German/English)
* Please note: Some countries may require you to dial a code other than “00” to access this international number,
please visit www.infineon.com/service for your country!
BDTIC
Where to Buy
Stay connected
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Infineon Technologies – innovative semiconductor solutions for energy efficiency, mobility and security.
Attention please!
The information given in this document shall in no event
be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples
or hints given herein, any typical values stated herein and/
or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property
rights of any third party.
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG.
All Rights Reserved.
Visit us:
www.infineon.com
Order Number: B132-H9905-X-X-7600
Date: 05 / 2014
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only
be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause
the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons
may be endangered.
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