BDTIC www.BDTIC.com/infineon RF & Protection Devices

BDTIC
BFP750
High Linearity Low Noise SiGe:C NPN RF Transistor
Data Sheet
Revision 1.0, 2010-10-22
RF & Protection Devices
www.BDTIC.com/infineon
BDTIC
Edition 2010-10-22
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
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be endangered.
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BFP750
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 1.0, 2010-10-22
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™,
SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
BDTIC
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-06-09
Data Sheet
3
Revision 1.0, 2010-10-22
www.BDTIC.com/infineon
BFP750
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
4.1
4.2
4.3
4.4
4.5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6
BDTIC
10
10
10
11
15
18
Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Data Sheet
4
Revision 1.0, 2010-10-22
www.BDTIC.com/infineon
BFP750
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Figure 17
Figure 18
Figure 19
Figure 20
Figure 21
Figure 22
Figure 23
Figure 24
Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
BFP750 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 15
DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 16
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 16
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 17
Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters. . . . . . . . . . . . . . . . . 18
Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC =60 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 20
Maximum Power Gain Gmax = f (VCE), IC = 60 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 20
Input Matching S11 = f ( f ), VCE = 3 V, IC = 30 / 60 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Source Impedance for Minimum Noise Figure Zopt = f ( f ), VCE = 3 V, IC = 30 / 60 mA . . . . . . . . 21
Output Matching S22 = f ( f ), VCE = 3 V, IC = 30 / 60 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 30 / 60 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . 22
Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 23
Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 23
Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . 24
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Marking Description (Marking BFP750: R8s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
BDTIC
Data Sheet
5
Revision 1.0, 2010-10-22
www.BDTIC.com/infineon
BFP750
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Table 10
Table 11
Table 12
Maximum Ratings at TA = 25°C (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
BDTIC
Data Sheet
6
Revision 1.0, 2010-10-22
www.BDTIC.com/infineon
SiGe:C Heterojunction Wideband RF Bipolar Transistor
1
•
•
•
•
•
•
•
•
SOT343
Features
Highly linear low noise driver amplifier for all RF frontends
up to 5.5 GHz
Output compression point OP1dB = 16 dBm
at 60 mA, 3 V, 3.5 GHz, 50 Ω system
Output 3rd order intermodulation point OIP3 = 28.5 dBm
at 60 mA, 3 V, 3.5 GHz, 50 Ω system
Maximum gain Gms = 19 dB at 60 mA, 3 V, 3.5 GHz
Minimum noise figure NFmin = 1.15 dB at 30 mA, 3 V, 3.5 GHz
Based on Infineon´s reliable, high volume SiGe:C wafer technology
Easy to use Pb-free (RoHS compliant) standard package with visible
leads
Qualified according AEC Q101
BDTIC
3
2
4
1
Application Examples
Driver amplifier
•
1.9 GHz and 5.8 GHz cordless phones
Transmitter driver amplifier
•
•
•
2.4 GHz WLAN / Bluetooth / WiMAX
3.5 GHz WiMax
5.5 GHz WLAN / WiMAX
Output stage LNA for active antennas
•
•
•
GPS, SDARS
2.4 / 5.5 GHz WLAN
2.4 / 3.5 / 5.5 GHz WiMAX, etc
Suitable for 8 - 12 GHz oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
Package
BFP750
SOT343
Data Sheet
Pin Configuration
1=B
2=E
7
3=C
Marking
4=E
R8s
Revision 1.0, 2010-10-22
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BFP750
Maximum Ratings
2
Maximum Ratings
Table 1
Maximum Ratings at TA = 25°C (unless otherwise specified)
Parameter
Symbol
Values
Unit
Min.
Collector emitter voltage
Note / Test Condition
Max.
VCEO
Open base
–
4.0
V
TA = 25 °C
–
3.5
V
TA = -55 °C
Collector emitter voltage
VCES
–
13
V
Emitter / base shortened
Collector base voltage
VCBO
–
13
V
Open emitter
Emitter base voltage
VEBO
–
1.2
V
Open collector
Collector current
IC
–
120
mA
–
IB
–
12
mA
–
Ptot
–
360
mW
TS ≤ 85 °C
TJ
–
150
°C
–
BDTIC
Base current
Total power dissipation
Junction temperature
1)
TStg
-55
150
°C
–
Storage temperature
1)TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
8
Revision 1.0, 2010-10-22
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BFP750
Thermal Characteristics
3
Thermal Characteristics
Table 2
Thermal Resistance
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
1)
RthJS
–
–
180
K/W
Junction - soldering point
1)For calculation of RthJA please refer to Application Note Thermal Resistance AN077
–
400
BDTIC
350
Ptot [mW]
300
250
200
150
100
50
0
0
50
100
150
Ts [°C]
Figure 1
Data Sheet
Total Power Dissipation Ptot = f (Ts)
9
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BFP750
Electrical Characteristics
4
Electrical Characteristics
4.1
DC Characteristics
Table 3
DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage
V(BR)CEO
Values
Min.
Typ.
Max.
4
4.7
–
Unit
Note / Test Condition
V
IC = 1 mA, IB = 0
BDTIC
Open base
Collector emitter leakage current
ICES
–
1
40
nA
VCE = 5 V, VBE = 0
Emitter/base shortened
Collector base leakage current
ICBO
–
1
40
nA
VCB = 5 V, IE = 0
Open emitter
Emitter base leakage current
IEBO
–
0.1
3
µA
VEB = 0.5 V, IC = 0
Open collector
hFE
DC current gain
160
250
VCE = 3 V, IC = 60 mA
400
Pulse measured
4.2
General AC Characteristics
Table 4
General AC Characteristics at TA = 25 °C
Parameter
Symbol
fT
Transition frequency
Values
Min.
Typ.
Max.
–
41
–
Unit
Note / Test Condition
GHz
VCE = 3 V, IC = 60 mA,
f = 1 GHz
Collector base capacitance
CCB
–
0.24
–
pF
VCB = 3 V, VBE = 0 V
f = 1 MHz
Emitter grounded
Collector emitter capacitance
CCE
–
0.55
–
pF
VCE = 3 V, VBE = 0 V
f = 1 MHz
Base grounded
Emitter base capacitance
CEB
–
1
–
pF
VEB = 0.5 V, VCB = 0 V
f = 1 MHz
Collector grounded
Data Sheet
10
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BFP750
Electrical Characteristics
4.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
VC
Top View
Bias -T
OUT
E
C
BDTIC
VB
Bias-T
E
B
(Pin 1)
IN
Figure 2
BFP750 Testing Circuit
Table 5
AC Characteristics, VCE = 3 V, f = 150 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
High linearity operation point
Gms
–
34.5
–
IC = 30 mA
Class A operation point
Gms
–
35.5
–
IC = 60 mA
Transducer gain
dB
ZS = ZL = 50 Ω
High linearity operation point
S21
–
33
–
IC = 30 mA
Class A operation point
S21
–
33.5
–
IC = 60 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
0.85
–
IC = 30 mA
Associated gain
Gass
–
32.5
–
IC = 30 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
15
–
IC = 60 mA
3rd order intercept point
OIP3
–
27.5
–
IC = 60 mA
Table 6
AC Characteristics, VCE = 3 V, f = 450 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
High linearity operation point
Gms
–
29.5
–
IC = 30 mA
Class A operation point
Gms
–
31.5
–
IC = 60 mA
Data Sheet
11
Revision 1.0, 2010-10-22
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BFP750
Electrical Characteristics
Table 6
AC Characteristics, VCE = 3 V, f = 450 MHz (cont’d)
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
dB
ZS = ZL = 50 Ω
Max.
Transducer gain
High linearity operation point
S21
–
29.5
–
IC = 30 mA
Class A operation point
S21
–
30.5
–
IC = 60 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
0.85
–
IC = 30 mA
Associated gain
Gass
–
29.5
–
IC = 30 mA
Linearity
dBm
ZS = ZL = 50 Ω
BDTIC
1 dB gain compression point
OP1dB
–
15.5
–
IC = 60 mA
3rd order intercept point
OIP3
–
29
–
IC = 60 mA
Table 7
AC Characteristics, VCE = 3 V, f = 900 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
High linearity operation point
Gms
–
26
–
IC = 30 mA
Class A operation point
Gms
–
27.5
–
IC = 60 mA
Transducer gain
dB
ZS = ZL = 50 Ω
High linearity operation point
S21
–
25
–
IC = 30 mA
Class A operation point
S21
–
25
–
IC = 60 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
0.85
–
IC = 30 mA
Associated gain
Gass
–
24.5
–
IC = 30 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
16
–
IC = 60 mA
3rd order intercept point
OIP3
–
30
–
IC = 60 mA
Table 8
AC Characteristics, VCE = 3 V, f = 1.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
High linearity operation point
Gms
–
23.5
–
IC = 30 mA
Class A operation point
Gms
–
24.5
–
IC = 60 mA
Transducer gain
dB
ZS = ZL = 50 Ω
High linearity operation point
S21
–
20.5
–
IC = 30 mA
Class A operation point
S21
–
21
–
IC = 60 mA
Minimum noise figure
Minimum noise figure
Data Sheet
dB
NFmin
–
0.85
12
–
ZS = Zopt
IC = 30 mA
Revision 1.0, 2010-10-22
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BFP750
Electrical Characteristics
Table 8
AC Characteristics, VCE = 3 V, f = 1.5 GHz (cont’d)
Parameter
Symbol
Gass
Associated gain
Values
Unit
Min.
Typ.
Max.
–
20.5
–
Linearity
Note / Test Condition
IC = 30 mA
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
16
–
IC = 60 mA
3rd order intercept point
OIP3
–
30
–
IC = 60 mA
Table 9
AC Characteristics, VCE = 3 V, f = 1.9 GHz
Parameter
Symbol
Values
Unit
Note / Test Condition
BDTIC
Min.
Typ.
Max.
Maximum power gain
dB
High linearity operation point
Gms
–
22.5
–
IC = 30 mA
Class A operation point
Gms
–
23.5
–
IC = 60 mA
Transducer gain
dB
ZS = ZL = 50 Ω
High linearity operation point
S21
–
18.5
–
IC = 30 mA
Class A operation point
S21
–
19
–
IC = 60 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
0.9
–
IC = 30 mA
Associated gain
Gass
–
18.5
–
IC = 30 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
16
–
IC = 60 mA
3rd order intercept point
OIP3
–
30
–
IC = 60 mA
Table 10
AC Characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
High linearity operation point
Gms
–
21
–
IC = 30 mA
Class A operation point
Gms
–
22
–
IC = 60 mA
Transducer gain
dB
ZS = ZL = 50 Ω
High linearity operation point
S21
–
16.5
–
IC = 30 mA
Class A operation point
S21
–
16.5
–
IC = 60 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
0.9
–
IC = 30 mA
Associated gain
Gass
–
16
–
IC = 30 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
16
–
IC = 60 mA
3rd order intercept point
OIP3
–
29.5
–
IC = 60 mA
Data Sheet
13
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BFP750
Electrical Characteristics
Table 11
AC Characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
High linearity operation point
Gms
–
19
–
IC = 30 mA
Class A operation point
Gms
–
19
–
IC = 60 mA
Transducer gain
dB
ZS = ZL = 50 Ω
High linearity operation point
S21
–
13
–
IC = 30 mA
Class A operation point
S21
–
13
–
IC = 60 mA
Minimum noise figure
dB
ZS = Zopt
BDTIC
Minimum noise figure
NFmin
–
1.15
–
IC = 30 mA
Associated gain
Gass
–
13.5
–
IC = 30 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
16
–
IC = 60 mA
3rd order intercept point
OIP3
–
28.5
–
IC = 60 mA
Table 12
AC Characteristics, VCE = 3 V, f = 5.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
High linearity operation point
Gma
–
14
–
IC = 30 mA
Class A operation point
Gma
–
14
–
IC = 60 mA
Transducer gain
dB
ZS = ZL = 50 Ω
High linearity operation point
S21
–
8
–
IC = 30 mA
Class A operation point
S21
–
8
–
IC = 60 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
1.4
–
IC = 30 mA
Associated gain
Gass
–
11
–
IC = 30 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
15
–
IC = 60 mA
3rd order intercept point
OIP3
–
27
–
IC = 60 mA
Note:
1. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured result
2. OIP33 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
14
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BFP750
Electrical Characteristics
4.4
Characteristic DC Diagrams
120
110
540 µA
100
475 µA
90
410 µA
IC [mA]
80
350 µA
70
BDTIC
280 µA
60
230 µA
50
180 µA
40
130 µA
30
90 µA
20
50 µA
10
0
Figure 3
0
0.5
1
1.5
2
2.5
3
VCE [V]
3.5
4
4.5
5
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
hFE
1000
100
0.1
1
10
100
1000
IC [mA]
Figure 4
Data Sheet
DC Current Gain hFE = f (IC), VCE = 3 V
15
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BFP750
Electrical Characteristics
1000
100
10
BDTIC
1
0.1
0.01
0.6
0.65
0.7
0.75
0.8
0.85
0.9
Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V
Figure 5
1
IB [mA]
0.1
0.01
0.001
0.0001
0.6
0.65
0.7
0.75
0.8
0.85
0.9
VBE [V]
Figure 6
Data Sheet
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
16
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BFP750
Electrical Characteristics
1.E-05
1.E-06
IB [A]
1.E-07
1.E-08
BDTIC
1.E-09
1.E-10
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
VEB [V]
Figure 7
Data Sheet
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
17
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BFP750
Electrical Characteristics
4.5
Characteristic AC Diagrams
45
4.00V
40
35
fT [GHz]
30
3.00V
25
BDTIC
20
2.50V
15
10
2.00V
5
0
Figure 8
1.00V
0
20
40
60
80
IC [mA]
100
120
140
120
140
Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter
32
30
28
OIP3 [dBm]
26
24
22
3V, 3.5GHz
4V, 3.5GHz
3V, 5.5GHz
4V, 5.5GHz
20
18
16
14
12
Figure 9
Data Sheet
0
20
40
60
80
IC [mA]
100
3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
18
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BFP750
Electrical Characteristics
0.6
0.5
CCB [pF]
0.4
0.3
BDTIC
0.2
0.1
0
Figure 10
0
0.5
1
1.5
2
2.5
VCB [V]
3
3.5
4
9
10
Collector Base Capacitance CCB = f (VCB), f = 1 MHz
39
36
33
30
27
G [dB]
24
G
ms
21
18
G
ma
15
2
|S21|
12
9
6
3
0
Figure 11
Data Sheet
0
1
2
3
4
5
6
f [GHz]
7
8
Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 60 mA
19
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BFP750
Electrical Characteristics
39
36
0.15GHz
G [dB]
33
30
0.45GHz
27
0.90GHz
24
1.50GHz
1.90GHz
2.40GHz
21
18
3.50GHz
BDTIC
15
12
5.50GHz
9
10.00GHz
6
3
0
Figure 12
0
20
40
60
80
100
IC [mA]
120
140
160
Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
39
36
0.15GHz
33
0.45GHz
G [dB]
30
27
0.90GHz
24
1.50GHz
1.90GHz
2.40GHz
21
3.50GHz
18
15
5.50GHz
12
10.00GHz
9
6
3
0
0.5
Figure 13
Data Sheet
1
1.5
2
2.5
3
VCE [V]
3.5
4
4.5
5
Maximum Power Gain Gmax = f (VCE), IC = 60 mA, f = Parameter in GHz
20
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BFP750
Electrical Characteristics
1
1.5
0.5
6
8
7
9
2
10
5
0.4
4
3
0.3
4
3
0.2
5
0.03 to 10 GHz
0.1
10
2
0.1
0
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
BDTIC
1
−0.1
−10
1
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
60 mA
30 mA
−1
Figure 14
Input Matching S11 = f ( f ), VCE = 3 V, IC = 30 / 60 mA
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.45GHz
0.1
0.1
0
10
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
0.9GHz
−0.1
−10
1.5GHz
I = 30mA
c
Ic = 60mA
−0.2
1.9GHz
−0.3
−5
−4
2.4GHz
−0.4
−3
3.5GHz
−0.5
−2
−1.5
−1
Figure 15
Data Sheet
Source Impedance for Minimum Noise Figure Zopt = f ( f ), VCE = 3 V, IC = 30 / 60 mA
21
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BFP750
Electrical Characteristics
1
1.5
0.5
2
9
0.4
10
8
3
7
0.3
6
4
5
0.2
5
4
0.1
0.03 to 10 GHz
10
3
0.1
0
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
2
BDTIC
−0.1
−10
1
1
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
60 mA
30 mA
−1
Figure 16
Output Matching S22 = f ( f ), VCE = 3 V, IC = 30 / 60 mA
2
1.8
1.6
NFmin [dB]
1.4
1.2
1
0.8
0.6
0.4
I = 60mA
0.2
C
I = 30mA
C
0
Figure 17
Data Sheet
0
0.5
1
1.5
2
f [GHz]
2.5
3
3.5
4
Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 30 / 60 mA, ZS = Zopt
22
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BFP750
Electrical Characteristics
2
1.8
1.6
NFmin [dB]
1.4
1.2
1
f = 3.5GHz
0.8
BDTIC
f = 2.4GHz
0.6
f = 1.9GHz
f = 1.5GHz
0.4
f = 0.9GHz
f = 0.45GHz
0.2
0
Figure 18
0
10
20
30
40
Ic [mA]
50
60
70
80
Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
2.4
2.2
2
1.8
NF50 [dB]
1.6
1.4
1.2
f = 3.5GHz
1
f = 2.4GHz
0.8
f = 1.9GHz
0.6
f = 1.5GHz
f = 0.9GHz
0.4
f = 0.45GHz
0.2
0
Figure 19
Data Sheet
0
10
20
30
40
Ic [mA]
50
60
70
80
Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
23
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BFP750
Electrical Characteristics
2.4
2.2
2
1.8
NF [dB]
1.6
1.4
1.2
1
BDTIC
0.8
Z = 50Ω
S
0.6
ZS = ZSopt
0.4
0.2
0
Figure 20
0
10
20
30
40
Ic [mA]
50
60
70
80
Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 3.5 GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25°C.
Data Sheet
24
Revision 1.0, 2010-10-22
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BFP750
Simulation Data
5
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest
versions before actually starting your design.
You find the BFP750 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these
circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is
ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin
configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP750 SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself.
BDTIC
Data Sheet
25
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BFP750
Package Information SOT343
6
Package Information SOT343
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
0.3 +0.1
-0.05
+0.1
0.15 -0.05
0.6 +0.1
-0.05
4x
0.1 M
BDTIC
0.2 M A
SOT343-PO V08
Figure 21
Package Outline
1.6
0.8
0.6
1.15
0.9
SOT343-FP V08
Figure 22
Package Foot Print
XY s
96
Manufacturer
2009, June
Date Code(YM)
Marking
Pin 1
Figure 23
Marking Description (Marking BFP750: R8s)
0.2
2.3
8
4
Pin 1
2.15
1.1
SOT323-TP V02
Figure 24
Data Sheet
Tape Dimensions
26
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BDTIC
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Published by Infineon Technologies AG
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