Opti MOS™3 Power-Transistor BSC054N04NS G

BSC054N04NS G
OptiMOS™3 Power-Transistor
Product Summary
Features
VDS
40
V
• Fast switching MOSFET for SMPS
RDS(on),max
5.4
mW
• Optimized technology for DC/DC converters
ID
81
A
• Qualified according to JEDEC1) for target applications
PG-TDSON-8
• N-channel; Normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
BDTIC
• Superior thermal resistance
• 100% Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC054N04NS G
PG-TDSON-8
054N04NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
81
V GS=10 V, T C=100 °C
52
V GS=10 V, T A=25 °C,
R thJA=50 K/W 2)
17
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
324
Avalanche current, single pulse4)
I AS
T C=25 °C
50
Avalanche energy, single pulse
E AS
I D=50 A, R GS=25 W
35
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
Rev. 2.1
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page 1
2013-05-17
BSC054N04NS G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
57
T A=25 °C,
W
2.5
R thJA=50 K/W 2)
Operating and storage temperature
Unit
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
°C
55/150/56
BDTIC
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
bottom
-
-
2.2
top
-
-
20
6 cm2 cooling area2)
-
-
50
Thermal characteristics
Thermal resistance, junction - case
R thJC
R thJA
Device on PCB
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=27 µA
2
-
4
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=40 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=50 A
-
4.5
5.4
mW
Gate resistance
RG
-
1.5
-
W
Transconductance
g fs
34
67
-
S
|V DS|>2|I D|R DS(on)max,
I D=50 A
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Rev. 2.1
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2013-05-17
BSC054N04NS G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2100
2800
-
620
820
Dynamic characteristics
C iss
Input capacitance
V GS=0 V, V DS=20 V,
f =1 MHz
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
22
-
Turn-on delay time
t d(on)
-
11
-
pF
ns
BDTIC
Rise time
tr
Turn-off delay time
t d(off)
Fall time
-
2.6
-
-
16
-
tf
-
3.6
-
Gate to source charge
Q gs
-
11
-
Gate charge at threshold
Q g(th)
-
6.3
-
Gate to drain charge
Q gd
-
3.3
-
Switching charge
Q sw
-
8.2
-
Gate charge total
Qg
-
26
34
Gate plateau voltage
V plateau
-
5.3
-
V
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
-
24
-
nC
Output charge
Q oss
V DD=20 V, V GS=0 V
-
23
-
-
-
47
-
-
324
V DD=20 V, V GS=10 V,
I D=30 A, R G=1.6 W
Gate Charge Characteristics5)
V DD=20 V, I D=30 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=50 A,
T j=25 °C
-
0.91
1.2
Reverse recovery charge
Q rr
V R=20 V, I F=I S,
di F/dt =400 A/µs
-
27
-
5)
A
T C=25 °C
V
nC
See figure 16 for gate charge parameter definition
Rev. 2.1
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2013-05-17
BSC054N04NS G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
60
90
80
50
70
Ptot [W]
40
60
50
ID [A]
BDTIC
30
20
40
30
20
10
10
0
0
0
40
80
120
160
0
40
80
TC [°C]
120
160
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
10 µs
102
100 µs
ZthJC [K/W]
DC
ID [A]
0.5
1
101
1 ms
0.2
0.1
0.05
0.1
0.02
10 ms
100
0.01
single pulse
10-1
0.01
10-1
100
101
102
VDS [V]
Rev. 2.1
0
0
0
0
0
0
1
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
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BSC054N04NS G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
200
12
5.5 V
10 V
10
7V
160
6V
8
RDS(on) [mW]
6.5 V
120
6.5 V
ID [A]
BDTIC
80
6V
7V
6
10 V
4
5.5 V
40
2
5V
0
0
0
1
2
3
0
10
20
VDS [V]
30
40
50
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
200
120
100
160
80
ID [A]
gfs [S]
120
60
80
40
150 °C
40
20
25 °C
0
0
2
3
4
5
6
7
8
VGS [V]
Rev. 2.1
0
40
80
120
160
ID [A]
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BSC054N04NS G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=27 µA
10
4
8
6
98 %
VGS(th) [V]
RDS(on) [mW]
3
BDTIC
typ
4
2
1
2
0
-60
-20
20
60
100
140
0
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
1000
104
Ciss
150 °C, 98%
25 °C
103
Coss
150 °C
IF [A]
C [pF]
100
102
25 °C, 98%
Crss
10
101
100
1
0
10
20
30
40
VDS [V]
Rev. 2.1
0.0
0.5
1.0
1.5
2.0
VSD [V]
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BSC054N04NS G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=30 A pulsed
parameter: T j(start)
parameter: V DD
100
12
20 V
10
8V
100 °C
25 °C
32 V
8
VGS [V]
IAV [A]
125 °C
BDTIC
10
6
4
2
1
0
0.1
1
10
100
1000
0
6
tAV [µs]
12
18
24
30
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
45
V GS
Qg
VBR(DSS) [V]
40
35
V gs(th)
30
25
Q g(th)
Q sw
Q gs
20
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 2.1
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BSC054N04NS G
Package Outline
PG-TDSON-8-5
PG-TDSON-8-5: Outline
BDTIC
Footprint
Dimensions in mm
Rev. 2.1
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2013-05-17
BSC054N04NS G
Package Outline
PG-TDSON-8: Tape
BDTIC
Dimensions in mm
Rev. 2.1
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page 9
2013-05-17
BSC054N04NS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
BDTIC
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
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page 10
2013-05-17