SIPMOS Small-Signal-Transistor BSS131

Type
BSS131
SIPMOS® Small-Signal-Transistor
Product Summary
Feature
• N-Channel
• Enhancement mode
VDS
240
V
RDS(on),max
14
Ω
ID
0.1
A
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
PG-SOT-23
• Qualified according to AEC Q101
BDTIC
• Halogen-free according to IEC61249-2-21
Type
Package
Pb-free
Tape and Reel Information
Marking
BSS131
PG-SOT23
Yes
H6327
SRs
Parameter
Symbol Conditions
Continuous drain current
ID
T A=25 °C
0.11
T A=70 °C
0.09
0.4
Pulsed drain current
I D,pulse
T A=25 °C
Reverse diode dv /dt
dv /dt
I D=0.1 A, V DS=192 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
V GS
ESD Class
P tot
Operating and storage temperature
T j, T stg
T A=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 2.6
6
±20
JESD22-A114-HBM
Power dissipation
Value
Unit
A
kV/µs
V
Class 0
0.36
W
-55 ... 150
°C
55/150/56
page 1
www.BDTIC.com/infineon
2012-03-29
BSS131
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
350
Thermal characteristics
Thermal resistance,
junction - minimal footprint
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
BDTIC
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
Gate threshold voltage
V GS(th)
V DS=0 V, I D=56 µA
Drain-source leakage current
I D (off)
240
-
-
0.8
1.4
1.8
V DS=240 V, V GS=0 V,
T j=25 °C
-
-
0.01
V DS=240 V, V GS=0 V,
T j=150 °C
-
-
5
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
10
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=0.09 A
-
9.07
20
Ω
V GS=10 V, I D=0.1 A
-
7.7
14
|V DS|>2|I D|R DS(on)max,
I D=0.08 A
0.06
0.13
-
Transconductance
Rev. 2.6
g fs
page 2
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S
2012-03-29
BSS131
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
58
77
-
7.3
10
Dynamic characteristics
pF
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
2.8
4.2
Turn-on delay time
t d(on)
-
3.3
5.0
Rise time
tr
-
3.1
4.6
Turn-off delay time
t d(off)
-
13.7
20
Fall time
tf
-
64.5
97
Gate to source charge
Q gs
-
0.16
0.22
Gate to drain charge
Q gd
-
0.8
1.2
Gate charge total
Qg
-
2.1
3.1
Gate plateau voltage
V plateau
-
2.90
-
V
-
-
0.11
A
-
-
0.43
-
0.81
1.2
V
-
42.9
64.3
ns
-
22.6
34
nC
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=120 V,
V GS=10 V, I D=0.1 A,
R G=6 Ω
ns
BDTIC
Gate Charge Characteristics
V DD=192 V, I D=0.1 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Rev. 2.6
T A=25 °C
V GS=0 V, I F=0.1 A,
T j=25 °C
V R=120 V, I F=0.1 A,
di F/dt =100 A/µs
page 3
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2012-03-29
BSS131
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
0.4
0.12
0.1
0.3
Ptot [W]
0.08
ID [A]
BDTIC
0.2
0.06
0.04
0.1
0.02
0
0
0
40
80
120
160
0
40
80
TA [°C]
120
160
TA [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
100
103
limited by on-state
resistance
30 µs
100 µs
0.5
1 ms
10-1
102
0.2
ID [A]
ZthJA [K/W]
10 ms
100 ms
10-2
0.1
0.05
101
0.02
DC
0.01
single pulse
10-3
100
1
10
100
1000
VDS [V]
Rev. 2.6
10-5
10-4
10-3
10-2
10-1
100
101
tp [s]
page 4
www.BDTIC.com/infineon
2012-03-29
BSS131
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
0.4
7V
10 V
25
2.3 V
4.5 V
2.7 V
3.3 V
3.9 V
23
5V
3.9 V
21
0.3
RDS(on) [Ω]
19
17
ID [A]
BDTIC
3.3 V
0.2
15
13
4.5 V
11
5V
2.7 V
0.1
7V
9
10 V
2.3 V
7
0
5
0
1
2
3
4
5
6
0
7
0.1
VDS [V]
0.2
0.3
0.4
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
0.3
0.4
0.25
0.2
gfs [S]
ID [A]
0.3
0.2
0.15
0.1
0.1
0.05
0
0
0
1
2
3
4
0.0
VGS [V]
Rev. 2.6
0.1
0.2
0.3
0.4
ID [A]
page 5
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2012-03-29
BSS131
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=0.1 A; V GS=10 V
V GS(th)=f(T j); V DS=VGS; I D=56 µA
parameter: I D
50
2.4
2
40
98 %
VGS(th) [V]
RDS(on) [Ω]
1.6
30
BDTIC
20
98 %
typ
1.2
0.8
2%
10
typ
0.4
0
0
-60
-20
20
60
100
140
-60
-20
20
Tj [°C]
60
100
140
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
I F=f(V SD)
parameter: T j
103
100
150 °C
25 °C
150 °C, 98%
25 °C, 98%
102
10-1
IF [A]
C [pF]
Ciss
101
10-2
Coss
Crss
100
10-3
0
10
20
30
0
0.8
1.2
1.6
2
2.4
2.8
VSD [V]
VDS [V]
Rev. 2.6
0.4
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2012-03-29
BSS131
13 Typ. gate charge
14 Drain-source breakdown voltage
V GS=f(Q gate); I D=0.1 A pulsed
V BR(DSS)=f(T j); I D=250 µA
parameter: V DD
300
12
290
120V
10
280
270
48 V
VBR(DSS) [V]
VGS [V]
8
192 V
260
BDTIC
6
4
250
240
230
220
2
210
200
0
0
0.5
1
1.5
2
2.5
Qgate [nC]
Rev. 2.6
-60
-20
20
60
100
140
Tj [°C]
page 7
www.BDTIC.com/infineon
2012-03-29
BSS131
Package Outline:
BDTIC
Footprint:
Rev. 2.6
Packaging:
page 8
www.BDTIC.com/infineon
2012-03-29
BSS131
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
BDTIC
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.6
page 9
www.BDTIC.com/infineon
2012-03-29