The influence of domain wall substructures to the magnetization reversals... patterned Permalloy thin films
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The influence of domain wall substructures to the magnetization reversals... patterned Permalloy thin films
The influence of domain wall substructures to the magnetization reversals of the patterned Permalloy thin films S. Singh, H. Gao, and U. Hartmann Institute of Experimental Physics, Saarland University, Campus C6 3, 66123, Saarbrücken, Germany Understanding of the magnetization reversals is important both in fundamental magnetism research and in industrial applications. Magnetic switching in patterned materials proceeds through various modes. Depending on the dimensions of the patterns, switching is governed by coherent rotation, curling and buckling of magnetic moments [1]. In the case of patterned materials with multi-domains, magnetization reversals take place due to the nucleation and displacement of domain walls. To reach the lowest energy levels, domain walls split into nanometer scale substructures with dimensions less than 10 nm [2]. The self-magnetostatic energy of the domain walls, which arises due to the magnetic free poles at the intersection of domain walls with the material surface, divides the domain wall into periodically arranged opposite polarized wall segments [3]. Substructures such as Bloch lines, Néel lines, vortexantivortex pairs (VAVP) significantly affect the magnetic characteristics of the patterns [4, 5]. Each part of the substructures propagates and evolves in different dynamic regimes at different velocities [5]. This limits the maximum velocity of domain wall motions in magnetic data storage devices. Magnetic charges emerging around the antivortex locations stiffen the magnetization around the antivortex vicinities. This leads to low mobility of the antivortices in cross-tie domain walls and hence, exhibits a stabilization effect against the domain wall displacement [6]. Thus, the substructures of domain walls dominate their characteristic behavior in applied magnetic fields. The change in the magnetic configuration inside a magnetic field is not only limited due to the motions of domain walls but also due to their substructures. In this work, we perform the direct observations of substructures of domain walls using Magnetic Force Microscope (MFM) technique. Our interest is to investigate the role of the substructures towards the magnetization reversal in patterned Permalloy (Py) thin films. The Py patterns were prepared in square and rectangular shapes of various aspect ratios by means of e-beam lithography (EBL). 20 nm to 200 nm thick Py (Ni81Fe19) films were prepared by sputtering. An in-plane static magnetic field was applied to move the domain walls during the MFM measurement. Magnetization switching along the long and short axis of the structures was measured and compared. Typical magnetization reversal MFM results on a patterned structure along the both axes involving nucleation and annihilation of VAVPs are shown in figures below. We related the shape anisotropy with the magnetic energy landscape, in terms of the different solenoidal configurations emerged at remanence during magnetization reversals. The experimental results were compared with micromagnetic simulations and the contributions of the different magnetic energies were investigated for better understanding of the magnetization reversal mechanism. Figure 1: MFM images of magnetization reversal along the short axis of a 50 nm thick 5 x 18 µm2 Py pattern Figure 2: MFM images of magnetization reversal along the long axis of a 50 nm thick 5 x 18 µm2 Py pattern References: [1] S. Chikazumi and S. H. Charap, Physics of Magnetism,Wiley, New York, 1964. [2] A. Hubert and R. Schäfer, Magnetic Domains, the analysis of magnetic microstructure, Springer, Berlin, 1998. [3] U. Hartmann, J. Appl. Phys., 62 (1987) 621. [4] C. Y. Kuo, W. S. Chung, J. C. Wu, L. Horng, Z. H. Wei, M. F. Lai, and C. R. Chang, J. Magn. Magn. Mater., 310 (2007) e672. [5] C. Zinoni, A. Vanhaverbeke, P. Eib, G. Salis, and R. Allenspach, Phys. Rev. Lett., 107 (2011) 207204. [6] R. D. Gomez, T. V. Luu, A. O. Pak, I. D. Mayergoyz, K. J. Kirk and J. N. Chapman, J. Appl. Phys., 85 (1999) 4598.