Networking Activities

European Integrated Activity of
Excellence and Networking
for Nano and Micro-Electronics
Analysis
Analytical Network for
Nanotech
R. Balboni
IMM, May 8, 2009
Sixth Framework Program
Research Infrastructures
ANNA – Analytical Network for NAnotech
• Overview
• Networking
• Transnational Access
• Joint Research
2
ANNA – Analytical Network for Nanotech
FBK (ex ITC-IRST), Povo, Trento, Italy
Research institute.
Coordination of the I3.
Fraunhofer Institut für Integrierte Systeme und
Bauelementetechnologie IISB, Erlangen, Germany
Research institute.
Numonyx, , Agrate Brianza, Milan, Italy
IC manufacturer.
MEMC, Novara, Italy
Silicon wafer manufacturer.
NCSR Demokritos, IMEL
Research Institute devoted to Silicon technology.
Research Institute for Technical Physics and Materials
Science of the Hungarian Academy of Sciences, Budapest,
Hungary
Academic institute devoted to interdisciplinary
research
Surface Science
Laboratory (SSL),
University of Patras, Greece
Academic institute
Atominstitut der Österreichischen Universitäten, Vienna
Technical University, Vienna, Austria
Academic institute
University of Salford,
United Kingdom
University - sub-nanometre MEIS depth profiling.
PTB, Berlin, Germany
National Metrology Institute: Laboratory at the
electron storage ring BESSY II in Berlin
CNR, Roma, ItalyInstitutes IMM (Bologna section) and IC
(Roma section)
Research institutes
Intel Performance Learning Solutions, Analytical
Laboratories, Intel Ireland
Industrial research laboratory
3
ANNA – Overview
• Duration: 2007 to 2010
• 12 partners from 7 European member states
• Funded by the European Commission within Framework
• Programme 6 - Research Infrastructures – Integrated
Infrastructure Initiative (I3)
• Budget: 7.5 M EUR; Funding: 5.65 M EUR (75%)
• Objectives
– To integrate and enhance European analytical resources
– To create centre of excellence for analysis of nanotechnologies
and a multi – site laboratory
– Long term vision: integrated distributed laboratory
4
ANNA – Overview: Analysis / Metrology / Characterisation
•
X-Ray technologies:
– TXRF, TXRF - NEXAFS, GIXRF, XRR, XRD
•
e-beam technologies:
– TEM, HRTEM, STEM
•
Ion beam technologies:
– SIMS, ToF-SIMS, MEIS
•
Surface characterization:
– XPS, AES, UPS, LEISS, EELS
•
Chemical analysis:
– AAS, GCMS, Sample Preparation
•
Electrical characterisation:
– C-V, C-T, I-t, C-G, SPV, ELYMAT, DLTS
•
Optical metrology:
– spectroscopic ellipsometry, defect inspection, FTIR
•
Samples:
– test structures, wafers, contamination and calibration standards
5
ANNA – Management and Networking Activities
• NA1: Management of the Consortium
• NA2: Establishment of analytical reference laboratories
– status evaluation
– ’golden labs’ (8 Partners with specialized expertise)
– accreditation (e.g. ISO 17025 – laboratories)
• NA3: Formation of European joint analytical laboratory
– integration
– web interface (www.anna-i3.org)
– user manual (for joint laboratory and transnational access)
• NA4: Standardization of samples and methodologies
– standardization
– matching
– references
6
ANNA – Transnational Access
•
More than 1000 days of European Community funded Transnational Access to
18 infrastructure (laboratories, clean room, metrology) at 8 locations
•
Access to ANNA instrumentation and analytical services is either in person
("hands-on") or remotely by suitable (electronic) communications
•
Potential users of the infrastructure are researchers or groups of researchers
from small & medium enterprises, large scale industry, research centres, or
universities
•
Interested users apply for research Access by submitting a short project
proposal
•
Selection of user proposals is by "peer review" on the basis of the
scientific/technical merit (innovation, scientific and technological relevance).
Priority will be given to first-time users and to users in countries without a
similar infrastructure
•
Access is available from 2008 to 2010
–
Note: Transnational Access means that users groups from the same country where the
operator of the infrastructure is established are not eligible for access.
7
ANNA – Transnational Access
TA1: PTB @ BESSY II
• Synchrotron radiation beam
lines for TXRF, GIXRF, XRR
TA5: MFA - facility
• Ellipsometry
• Makyoh
TA2: irst - SIMS & MICRO
• SIMS
• ToF-SIMS IV
• SEM JSM 7401F
• AFM, XPS
TA6: IISB - laboratories
• Ultra trace analysis
• Organic contamination
analysis
• Wafer surface preparation
and contamination
TA3: CNR - STEM facility
• TEM-STEM
TA7: IMEL - laboratories
• Electrical and optical
characterisation
• Fabrication of test
structures
TA4: Atominsititut
• ATI-x-ray lab
TA8: MEIS – facility at
Daresbury laboratory
• MEIS
8
ANNA – Joint Research
• Enhancement and development of methodologies
• Improvement of ANNA services
JRA1
Highly sensitive detection of inorganic
contamination from Li to U
JRA2
Comprehension of organic
contamination on wafer surfaces
JRA3
Accurate characterisation of ultra shallow
junctions
JRA4
Nanofilms characterisation
JRA5
Investigation of local strain at sub-micron scale
JRA6
Characterisation of nano-crystals
9
Mid-Term (year 2) review
• NA
–
–
–
Positive comments about coordination and management 'highly effective'.
Advisory board very reactive and involved
Project communication has been very well organized
Accreditation in delay, but understandable.
• TA
–
Open up to 25% to different fields than microelectronics
–
Preference to projects that ask to use a multitechnique approach
• JRA
–
–
–
Very impressive the cross checking: good and important work
True joint research activity, successful and flexible as demanded
In line with expectations and also publications ok.
Very positive overall evaluation of the Consortium
10
IMM – Bologna in ANNA
•
Budget
– 899,510 € eligible, 508,555 € financed (57 %)
•
Impegno
– 71 m/m
– TEM (CBED, HREM, HAADF STEM) and X-rays structural
characterisation (lab and synchrotron)
Research and
Management
Technological
Coordination /
Transnational
Networking
Access
Other
Total
Development
Eligible
672,491
22,493
131,871
54,655
18,000
899,510
Funded
314,860
22,490
101,205
52,000
18,000
508,555
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IMM in ANNA
• Networking
– NA2-Accreditation of the Electron Microscopy Lab
• Requested for
– Strain measurement in silicon by CBED
– Dopant concentration measurement by TS-STEM
• ISO 17025 accreditation is a project specific request in view of the
establishment of the Golden Lab
– Management Manual and Technical
– definition of the Lab Responsibles
– To be completed by end of 2009
– NA3-Formation of the Joint Lab
• User manual
12
IMM in ANNA
• Transnational Access
– TEM analysis by STEM-HAADF, CBED e HREM)
– Activity started in 2008
– 2 accesses up to now
• 2 people, University of Cork and INTEL Ireland “Strain analysis on
Ge nanowires”
• 1 people, University of German Federal Armed Forces, “HREM of
oxides on Si”
– Sono pervenute altre 4 richieste nei successivi calls (su un
totale di 57 per ANNA), 2 sono già state selezionate per
l’accesso.
13
ANNA - JRA3: Tilted Sample Annular Dark Field Scanning
Transmission Electron Microscopy (TSADF-STEM)
•
The aim is to define methodologies able to give a more complete
characterization of ultra shallow dopant distributions
Messa a punto di una tecnica ADF-STEM quantitativa per la determinazione dei profili di
drogaggio in giunzioni ultra-sottili in Si.
Modifica originale di una precedente tecnica dovuta a Pennycook et al. (1999).
E’ stato necessario comprendere i meccanismi
di contrasto operanti in ogni condizione
sperimentale. Questo ha permesso di definire
una procedura per filtrare/selezionare il
segnale voluto.
Nel caso dell’As in Si è stato possibile
determinare la distribuzione del drogante alla
superficie del campione dove falliscono
tecniche spettroscopiche come il SIMS.
La sensibilità della tecnica nel caso dell’As è ~ 1% mentre la precisione della
procedura quantitativa è dell’ordine del 10%.
14
Quantitative determination in 5 keV 2x1015 As/cm2 implanted Si
On-axis ADF-STEM
TSADF-STEM
as-implanted
800 °C for 3
min
A. Parisini, V. Morandi, S. Solmi, P. G. Merli, D. Giubertoni, M. Bersani and J. A. van den Berg,
Appl. Phys. Lett., 92, 261907 (2008).
15
ANNA - JRA3: communications and publications

A. Armigliato, R. Balboni and A. Parisini
ECS Transactions, 10, 57-64, 2007.

A. Parisini, D. Giubertoni, M. Bersani, V. Morandi, P. G. Merli, and J. A. van den Berg
MRS Symposia Proceedings No 1026E (Matreials Research Society, Pittsburgh, 2007),
1026-C09-04.

A. Parisini, D. Giubertoni, M. Bersani, M. Ferri, V. Morandi and P. G. Merli
Proceedings of the 8th Multinational Congress on Microscopy, Prague, 18-21 june 2007, p. 43.

A. Parisini, V. Morandi and S. A. Mezzotero
Proceedings of the 14th European Microscopy Congress, Eds. M. Luysberg, et al., 1-5
September 2008, Aachen, Germany, vol.1, p. 145.

A. Parisini, V. Morandi, S. Solmi, P. G. Merli, D. Giubertoni, M. Bersani and J. A. van den Berg
Appl. Phys. Lett., 92, 261907 (2008).

A. Parisini, V. Morandi, J. A. van den Berg, M. A. Reading, D. Giubertoni, P. Bailey, T. Noakes
submitted to ALTECH 2009, 216th ECS Meeting, Vienna, October 4-9, 2009.

A. Parisini, V. Morandi and S. A. Mezzotero
Microscopy and Analysis, in press (2009).
16
ANNA - JRA4.
•
The development of methods for the chemical, structural, optical
and electrical characterization of 1-10 nm thick (oxy)nitrides and
high-k materials films.
Misura dello spessore: confronto tra i risultati ottenuti con HREM, MEIS, XPS, SE:
1.4 ± 0.5 nm
2.1 ± 0.5 nm
Glue
HfSiOx
SiOx
1.1 ± 0.5 nm
1.1 ± 0.5 nm
Fig. 6. Example of thickness measurement in a (011) cross-sectional HREM micrograph
obtained on an HfSiOx/SiO2/Si high-k structure (sample D07).
a) emerge immediatamente il problema della scala su cui sono fatte le misure e
della conseguente necessità di una misura dell’uniformità degli spessori;
b) l’evidente rugosità dei films induce inoltre a considerare più attentamente la
misura dello spessore.
17
ANNA - JRA4.
Un primo approccio alla misura HREM dello spessore su film rugosi:
Osservazione: differenti trattamenti portano a differenti valori di Ls.
Definizione di misura locale:
profilo d’intensità mediato su
regioni d’estensione pari a Ls
Gli spessori dei vari film sono definiti
tramite i punti di flesso del profilo
mediato
Diverse misure locali sono effettuate su
diverse immagini e i risultati sono espressi
come:
X X
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ANNA - JRA4
Il confronto delle misure ottenute con le diverse tecniche è
attualmente in corso.
Nel prossimo futuro: confronto tra spessore strutturale
(HREM) e composizionale (HR ADF-STEM o TSADF-STEM)
sulla stessa area.
Communications and publications

M. Fried, P. Petrik, J.A. van den Berg, M.A. Reading and A. Parisini
submitted to ALTECH 2009, 216th ECS Meeting, Vienna, October 4-9, 2009.

J.A. van den Berg, M A Reading, A Parisini, M. Kolbe, B. Beckhoff, S. Ladas, P. Petrik, P.Bailey,
T. Noakes , T. Conard and S. De Gendt
submitted to ALTECH 2009, 216th ECS Meeting, Vienna, October 4-9, 2009.

M. Reading, J. A. van den Berg, P. Bailey, T. Noakes, P. Zalm, A. Parisini, T. Conard and
S. De Gendt
submitted to J. Vac. Sci. Technol. B (2009)
19
JRA5
•This activity aims at setting up a method to measure the mechanical stress in
present and future generation devices by TEM-CBED.
•The results of this technique will be validated by comparison with electrical
measurements of stress-sensitive devices and with the results of numerical
calculations.
Ezz
12
10
8
6
Z
-4
Strain (x10 )
4
X
Y
2
0
-2
-4
-6
-8
-10
0
50
100
150
200
250
300
distance from top of active area (nm)
The procedure for TEM-CBED sample preparation by FIB was
found NOT to be a trivial issue.
20
JRA5 - IMM
•
A reliable sample preparation procedure was defined, using a low energy
final finishing (5 KeV) during FIB milling.
•
CBED measurements were validated by comparison with strain data
obtained from process simulations and by measurements of samples with
a known strain trend.
•
The impact of mechanical strain on the electrical properties of devices was
shown both in terms of mobility modifications and in terms of defect
generation
•
The possibility to measure the mechanical strain induced by layers doped
with different impurities was demonstrated
•
Pubblicazioni
–
–
A. Armigliato, R. Balboni and A. Parisini, ECS Transactions, 10, 57-64, 2007.
R.Balboni, G. Borionetti, L. Moiraghi, G.Vaccari, M.L. Polignano, G. P. Carnevale,
F. Cazzaniga, I. Mica, F. Sammiceli, submitted to ALTECH 2009, 216th ECS
Meeting, Vienna, October 4-9, 2009.
21
JRA6
Start month
End month
6
48
Activity number
JRA6
Activity Title
Characterization of nanocrystals
Participant number
6
1
5
9
11
Participant short name
MFA
ITC-irst
IMEL
USAL
CNR-IMM
Total
Total Person-months
15
13
15
13
12
68
Objectives and expected impact:
Nanocrystalline semiconductors embedded in dielectric matrices
(e.g. silicon rich oxide, ion implanted silicon oxide, SixOyNz, etc.)
are currently under investigation for use in Si-photonics and in
memory devices. The aim of this JRA is to develop and improve
metrologies for the measurement of nanocrystal properties.
22
▪ nc-Si embedded in amorphous matrice
JRA6 – X-ray analysis results
Deposition of Silicon Rich Oxide (SRO) by Plasma Enhanced Chemical Vapor Deposition
(PECVD) process on silicon blank wafers, followed by thermal annealing.
OP-GID patterns
intensity
wafer 7
wafer 12
wafer 15
wafer 16
Si 111
26
intensity
20
•
25
30
The nano-crystals dimensions estimated
from XRD measurements (~4 nm) are in
substantial agreement with the the sizes
determined by PL measurements.
35
40
2 (deg)
▪ nc-Si from SUPERLATTICES (SiO2/SRO):
28 30
2 (deg)
45
A series of samples (PECVD) annealed at
different temperatures (from 600°C to 1150 °C).
50
-The surface and interfaces evolution have
been followed by XRR;
-The occurrence of nano-crystals have
been determined at 1000°C.
Pubblicazioni
–
P. Petrika, S. Militab, G. Puckerc, A. G. Nassiopouloud, J. A. van den Berge, M.
A. Readinge, M. Frieda, and T. Lohnera, M. Theodoropouloud, S. Gardelisd, M.
Barozzic, M. Ghulinyanc, A. Luic, L. Vanzettic, A. Picciottoc, submitted to ALTECH
2009, 216th ECS Meeting, Vienna, October 4-9, 2009.
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ANNA - Conclusioni e prospettive
•
Commenti
– È una delle principali fonti di finanziamento del reparto
Strutturistica
– Nella sua pur complessa struttura, offre sufficiente spazio
all’attività di ricerca
– ANNA e l’attività di Transnational Access offre opportunità di
contatti con altri gruppi in Europa
– Accreditamento
• Difficile adattare la nostra realtà ed i criteri previsti da
ISO17025
• CE verso l’accreditamento
• Italia ed Europa
•
Prospettive ?
– In FP7 gli i3 hanno mantenuto i finanziamenti precedenti
– Proposta di un progetto per i Golden Labs ?
24