SiCILIA - Agenda

SiCILIA
Silicon Carbide Detectors
for Intense Luminosity Investigations and Applications
CALL presentata nell’ambito della CSN5
SiCILIA
Radiation Hard detectors for Nuclear Physics experiments and Nuclear applications
SiC DE-E telescopes
 Active area 1 cm2
 DE stage thickness ≥ 100 mm
 E stage thickness 500 ÷ 1000 mm
DE amplitude (a.u.)
Ion identification
E amplitude (a.u.)
Epitaxial growth SIC: beyond the state of the art
Know how transfer
New Tecnology
p-n junctions SiC
Applications
NUclear Matrix Elements of Neutrinoless Double Beta
Decays by Heavy Ion Double Charge Exchange Reactions
NUMEN project
DCE => 12C, 18O, 20Ne to energies between 15 and 30 MeV/u
MAGNEX
Multiwire gas tracker and DE stage
limited to
1 kHz
+
R. H.
From Multiwire gas tracker  to GEM gas tracker
From 7 X 5 cm2 silicon Wall  to 1 cm2 telescopes wall
1014 ions/cm2
in ten years of activity
(Si detector dead @ 109 implanted ions/cm2)
1 cm2 DE-E telescope
Applications
FAZIA Collaboration
European initiative for a next-generation charged particle array
Radiation hard telescopes for heavy-ion induced reactions around and
below the Fermi energy (10-100 AMeV). The project aim is to build a
4Pi array for charged particles, with high granularity and good energy
resolution, with A and Z identification capability
Pulse shape analysis
Applications
-NP
Detectors working in plasmas environment
TDR1-Laser Driven Nuclear Physics
Nuclear reactions in Laser plasmas @ ELINP
ELI-Beamlines MEDical and multidisciplinary applications
ELIMED concept





Requirements
Radiation Hardness
Timing
Insensibility to the visible radiation
X-ray sensitivity
Neutrons sensitivity (ITER, ESS, etc.)
State of art
Minimum Ionizing Particles
RD - CERN
M.Moll , NIM in Physics Research A 511 (2003) 97–105
Property
Eg [eV]
Ebreakdown [V/cm]
me [cm2/Vs]
mh [cm2/Vs]
vsat [cm/s]
Z
r
e-h energy [eV]
Density [g/cm3]
Displacem. [eV]
Diamond
5.5
107
1800
1200
2.2·107
6
5.7
13
3.515
43
GaN
3.39
4·106
1000
30
31/7
9.6
8.9
6.15
15
4H SiC
3.26
2.2·106
800
115
2·107
14/6
9.7
7.6-8.4
3.22
25
Si
1.12
3·105
1450
450
0.8·107
14
11.9
3.6
2.33
13-20
 Wide bandgap (3.3eV)
 lower leakage current
than silicon
 Signal (for MIP !):
Diamond 36 e/mm
SiC
51 e/mm
Si
89 e/mm
 more charge than
diamond Si/SiC≈2
 Higher displacement
threshold than silicon
 radiation harder than
silicon
Radiation Hardness
Defects in the semiconductor lattice create energy levels in the band gap
- Modification of the effective doping concentration
Shift the depletion voltage
- Trapping of charge carriers
reduced lifetime of charge carriers
- Easier thermal excitement of e-h
increase the leakage current
Atom displacements
V
I
Vacancy
+
Interstitial
Point-like defects
Cluster defects
dead zones
no-recovery
Annealing
heat treatment
SiC higher displacement threshold than Silicon!
NIEL (Non Ionising Energy Loss)
Displacement of lattice atoms
Messenger et al. IEEE TRANS. ON NUCL. SCIE., VOL. 50, NO. 6, 2003
Leakage current
IL = Idiff + Igen
I gen µ AWN tT 2e
A= detector area
W=term related to the junction thickness
Nt=number of traps/defect
Ec=energy of conduction band
Et=energy of trapping levels
-
(EC - Et )
kT
SiC
3.2eV
Si 1.2eV
-5 (Si)
I gen »10 I gen
(SiC )
R.H. Experimental data
16O
Ratio of peak centroid of 16O energy spectrum
after (PCAI) and before irradiation (PCBI)
@ 35 MeV
Relative Energy resolution
G. Raciti et al. Nuclear Physics A 834 (2010) 784
M. De Napoli et al. NIMA 600 (2009) 618
SiC performance
 Low leakage current  high energy resolution  X-rays detection
 Timing  sub-nanoseconds ToF application
 Insensible to visible light  neutrons and charged particles detection in plasmas
Xiaodong Zhang IEEE Trans. Nucl. Scie. VOL. 60, NO. 3, JUNE 2013
G. Bertuccio et al. IEEE Trans. Nucl. Scie. 60, NO. 2, APRIL 2013
A. Picciotto et al. Phys. Rev. X 4, 031030 (2014)
TOF distribution measured by the SiC detector for
the Si-H-B (orange curve) and Si (blue curve) targets
SiC detector construction: state of art
Schottky diodes on epitaxyal layer grow onto highpurity 4H–SiC n- type substrate
 Active thickness 80 mm
 4H-SiC bulk 250 mm
 Active Area 2x2 mm2
Istituto per la Microelettronica e Microsistemi
SiCILIA
 1 cm2 DE-E telescope
 thickness of DE stage ≥ 100 mm
 thickness of E stage 500 ÷ 1000 mm
SiCILIA Strategy
p-n junctions =>
100mm
Detector D E
=> Schottky junctions
Detector E
LASER
ANNEALING
500-1000mm
reduction thickness and metallization back
SiCILIA Strategy
p-n junctions
100mm
Detector D E
Detector E
LASER
ANNEALING
500-1000mm
reduction thickness and metallization back
Work packages organization
WP1 – Project coordinator and management
CNR-INO
Pisa
WP4: G.Gorini
Neutrons
Irradiation and
test
WP3: G.Cirrone
WP5: D. Giove
Ions and electrons
irradiation
Photon detection
and spectroscopy
SiCILIA
CNR-IMM
Catania
WP2: F. La Via
WP6: G.Pasquali
Material Study
and devices
Ions identification:
Pulse shape
discrimination
construction
FBK Trento
ST-Microelectronics
WP1: S.Tudisco
Design studies
and test
CNR-INO
Pisa
Work packages organization
Description of the activities for WP1
- Prototypes: design, constructions, assembly and test
- SiC-Wall demonstrator: design, construction, assembly and test
- Project management.
Description of the activities for WP2
- R&D on epitaxial process
- wafers characterization
- Devices definition: structures and processes
- Devices: construction, test and optimization
-
Description of the activities for WP3
Irradiation at INFN-LNS and Messina facility (ions and electrons)
Experimental tests in laser-driven ion facilities
Description of the activities for WP4
- R&D on SiC detectors response to fast neutrons (from fusion and spallation sources)
- R&D on SiC detectors response to mono-energetic neutrons
Work packages organization
Description of the activities for WP5
- R&D on SiC detectors response to X-ray. Device design and characterization:
- Detector-Front-End electronics system design
- Detector test: spectroscopic characterization and test with photons
Description of the activities for WP6
- Prototype test with radioactive sources
- Detectors response: studies of current and charge signal waveforms.
- PSD studies: heavy-ion beams test
Global Deliverables
•
•
•
•
•
•
Tens of detectors: epitaxial grow SiC (50-150 μm thick) semi-insulating SiC (500-1000
μm thick)
Study of the performance in the electrons and ions detection (radiation hardness,
energetic resolution, timing, etc.)
Study of the performance in the neutrons and X-ray detection
Study of the ions identification through the pules shape analysis
A wall of tens of SiC telescopes equipped with a VMM ASIC front-end as demonstrator
Performance of demonstrator in operative conditions
SiCILIA
Money plan
Wafers + Processing costs + PL system
* 2 years research grants for WP1 and WP2
PL system @LNS for the
characterization of stacking faults
and dislocations in epitaxial layers
SiCILIA
Participating INFN research units
INFN Laboratori Nazionali del Sud di Catania (LNS)
INFN Sezione di Catania and “Gruppo collegato di Messina” (CT-ME)
INFN Sezione di Milano Bicocca (MI-B)
INFN Sezione di Milano (MI)
INFN Sezione di Firenze (FI)
INFN Sezione TIFPA (TN)
INFN Sezione Pisa (PI)
External institutions involved in the project
CNR-IMM – Catania
CNR-INO – Pisa
External companies involved in the project
Fondazione Bruno Kessler (FBK) – Trento
ST Microelectronics – Catania
LPE – Catania (LPE)
Milestones
•
•
•
WP1
Definition and optimized detector design (T0+6 months)
Design and construction of the first prototypes (T0+16 months)
Design and construction of the final SiC-Wall demonstrator (T0+24 months)
•
•
•
•
•
WP2
Definition of the optimized epitaxial process (T0+6 months)
Development of the processes steps (T0+9 months)
First construction of the detectors (T0+15 months)
Characterization of the first detectors (T0+24 months)
Optimization and realization of the final detectors (T0+26 months)
•
•
•
•
•
•
WP3
Preparation of the irradiation set-up at the zero-degree room of the INFN-LNS (T0 + 12 months)
Preparation of the irradiation set-up at the Messina Facility (T0 + 12 months)
Irradiations at the LNS facility (12 to 24 months)
Irradiations at LINAC-ME facility (12 to 24 months)
Preparation of the SiC samples for laser-driven ions measures in ToF configuration (12 to 18 months)
Experimental tests in laser-driven ion facilities (24 to 36 months)
Milestones
•
•
•
WP4
Installation of SiC detectors on the n_TOF1 beam-line at CERN (T0+16 months)
Installation of SiC detectors on the CHIPIR beam-line at ISIS (T0+18 months)
Installation of SiC detectors on the JET fusion reactor (T0+21 months)
WP5
•
•
•
•
•
Definition of device specification (T0+6 months)
Design and simulation of detector prototypes (T0+12 months)
Detector prototype electrical characterization (T0+23 months)
Detector Prototype spectroscopic characterization (T0+26 months)
Test of detector prototype with laser plasma photons and data analysis (T0+36 months)
•
•
•
WP6
Study of the single SiC layers of the Telescope with alpha particles (T0+20 months)
Study of the prototype SiC single pads and telescope with ion beams (T0+30 months)
Analysis and results, Scientific reports (T0+36 months)
SiC Wall
VMM2
SiC Wall
Costi wafer
Tipologia
Wafer epitassia sottile
Wafer epitassia spessa
Wafer intrinseci
Epitassie wafer intrinseci
n.
30
27
27
27
Costo €
48000
78300
62100
32400
Descrizione
testing processo
Rivelatore DE
Rivelatore E
Rivelatore E
TOTALE COSTO DEI WAFER PER PROVE DI PROCESSO E PROTOTIPI
DI RIVELATORI SCHOTTKY E GIUNZIONI P/N E e DE 220.800 €
PL system @LNS for the
characterization of
stacking faults and
dislocations in epitaxial
layers