FDC6320C Dual N & P Channel , Digital FET October 1997

October 1997
FDC6320C
Dual N & P Channel , Digital FET
General Description
Features
These dual N & P Channel logic level enhancement mode field
effec transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
The device is an improved design especially for low voltage
applications as a replacement for bipolar digital transistors in
load switching applications. Since bias resistors are not
required, this dual digital FET can replace several digital
transistors with difference bias resistors.
N-Ch 25 V, 0.22 A, RDS(ON) = 5 Ω @ VGS= 2.7 V.
P-Ch 25 V, -0.12 A, RDS(ON) = 13 Ω @ VGS= -2.7 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits. VGS(th) < 1.5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace NPN & PNP digital transistors.
SOT-23
SuperSOTTM-6
Absolute Maximum Ratings
Symbol
Parameter
VDSS, VCC
SuperSOTTM-8
SO-8
SOIC-16
SOT-223
4
3
5
2
6
1
TA = 25oC unless other wise noted
N-Channel
P-Channel
Units
Drain-Source Voltage, Power Supply Voltage
25
-25
V
VGSS, VIN
Gate-Source Voltage,
8
-8
V
ID, IO
Drain/Output Current
0.22
-0.12
A
PD
Maximum Power Dissipation
TJ,TSTG
Operating and Storage Tempature Ranger
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
- Continuous
- Pulsed
0.5
-0.5
0.9
W
-55 to 150
°C
6
kV
(Note 1a)
140
°C/W
(Note 1)
60
°C/W
(Note 1a)
(Note 1b)
0.7
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
© 1997 Fairchild Semiconductor Corporation
FDC6320C.Rev C
DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Type
Min
VGS = 0 V, ID = 250 µA
N-Ch
25
VGS = 0 V, ID = -250 µA
P-Ch
-25
ID= 250 µA, Referenced to 25 oC
N-Ch
25
ID = -250 µA, Referenced to 25 oC
P-Ch
-20
N-Ch
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
IDSS
Zero Gate Voltage Drain Current
VDS= 20 V, VGS= 0 V,
IDSS
Zero Gate Voltage Drain Current
VDS =-20 V, VGS = 0 V,
IGSS
Gate - Body Leakage Current
V
mV /oC
1
TJ = 55°C
µA
10
P-Ch
-1
VGS = 8 V, VDS= 0 V
N-Ch
100
nA
VGS = -8 V, VDS= 0 V
P-Ch
-100
nA
TJ = 55°C
µA
-10
ON CHARACTERISTICS (Note 2)
∆VGS(th)/∆TJ
Gate Threshold Voltage Temp. Coefficient
ID = 250 µA, Referenced to 25 o C
VGS(th)
RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
-2.1
ID= -250 µA, Referenced to 25 C
P-Ch
1.9
VDS = VGS, ID= 250 µA
N-Ch
0.65
0.85
1.5
VDS = VGS, ID= -250 µA
P-Ch
-0.65
-1
-1.5
3.8
5
6.3
9
N-Ch
VGS = 2.7 V, ID = 0.2 A
TJ =125°C
VGS = 4.5 V, ID = 0.4 A
P-Ch
VGS = -2.7 V, ID = -0.05 A
TJ =125°C
VGS = -4.5 V, ID = -0.2 A
ID(ON)
On-State Drain Current
gFS
Forward Transconductance
mV / oC
N-Ch
o
3.1
4
10.6
13
15
21
7.9
10
N-Ch
0.2
VGS = -2.7 V, VDS = -5 V
P-Ch
-0.05
VDS = 5 V, ID= 0.4 A
N-Ch
0.2
VDS = -5 V, ID= -0.2 A
P-Ch
0.135
N-Channel
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
N-Ch
9.5
P-Ch
11
N-Ch
6
P-Ch
7
N-Ch
1.3
P-Ch
1.4
VGS = 2.7 V, VDS = 5 V
V
Ω
A
S
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P-Channel
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
pF
pF
pF
FDC6320C.Rev C
DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
nS
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
N-Channel
N-Ch
5
11
VDD = 6 V, ID = 0.5 A,
P-Ch
6
12
4.5
10
tr
Turn - On Rise Time
VGS = 4.5 V, RGEN = 50 Ω
N-Ch
P-Ch
6
12
tD(off)
Turn - Off Delay Time
P-Channel
N-Ch
4
10
VDD = -6 V, ID = -0.5 A,
P-Ch
7.4
15
tf
Turn - Off Fall Time
VGEN= -4.5 V, RGEN = 50 Ω
N-Ch
3.2
8
P-Ch
4
10
Qg
Total Gate Charge
N-Ch
0.29
0.4
P-Ch
0.23
0.32
Qgs
Gate-Source Charge
N-Channel
VDS = 5 V,
ID = 0.2 A, VGS = 4.5 V
N-Ch
0.105
Qgd
Gate-Drain Charge
P-Channel
VDS = -5 V,
ID = -0.2A, VGS = -4.5 V
P-Ch
0.12
N-Ch
0.045
P-Ch
0.03
nS
nS
nS
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
N-Ch
0.5
P-Ch
VGS = 0 V, IS = 0.5 A
VGS = 0 V, IS = -0.5 A
(Note 2)
(Note 2)
A
-0.5
N-Ch
0.97
1.3
P-Ch
-1
-1.3
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
Typical RθJA using the board layouts shown below on FR-4 PCB in a still air environment:
a. 140OC/W on a 0.125 in2 pad of
2oz copper.
b. 180OC/W on a 0.005 in2 of pad
of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDC6320C.Rev C
Typical Electrical Characteristics: N-Channel
V GS = 4.5V
1.4
4.0
R DS(on) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
0.5
3.5
3.0
0.4
2.7
2.5
0.3
0.2
2.0
0.1
1.5
0
0
0.5
V
DS
1
1.5
2
, DRAIN-SOURCE VOLTAGE (V)
2.5
VGS = 2.0V
1.2
2.5
2.7
1
3.0
3.5
4.0
0.8
4.5
0.6
3
0
R DS(on) , ON-RESISTANCE (OHM)
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.5
VGS = 2.7 V
1.2
1
0.8
I D = 0.2A
12
25°C
6
3
0
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
125
150
125°C
9
2
2.5
3
3.5
4
V GS , GATE TO SOURCE VOLTAGE (V)
J
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
0.5
V DS = 5.0V
V GS = 0V
T = -55°C
J
25°C
0.2
I S, REVERSE DRAIN CURRENT (A)
0.2
125°C
I D , DRAIN CURRENT (A)
0.4
15
I D = 0.2A
1.4
0.15
0.1
0.05
0
0.5
0.3
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
0.6
-50
0.2
I D , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.6
0.1
1
1.5
2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
TJ = 125°C
0.1
25°C
0.01
-55°C
0.001
0.0001
0.2
0.4
0.6
0.8
1
V
, BODY DIODE FORWARD VOLTAGE (V)
1.2
SD
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
FDC6320C.Rev C
Typical Electrical Characteristics: N-Channel (continued)
5
VGS , GATE-SOURCE VOLTAGE (V)
30
CAPACITANCE (pF)
20
C iss
10
C oss
5
3
f = 1 MHz
2
V GS = 0V
C rss
1
0.1
0.5
1
2
5
10
I D = 0.2A
3
2
1
0
25
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
0
0.2
0.25
0.3
0.35
10
0m
s
1s
DC
V GS = 2.7V
SINGLE PULSE
RθJA =See note 1b
TA = 25°C
1
2
V
DS
SINGLE PULSE
RθJA =See note 1b
TA = 25°C
4
POWER (W)
ID , DRAIN CURRENT (A)
IT
LIM
N)
(O
S
RD
0.1
0.01
0.5
0.15
5
1m
s
10
ms
0.5
0.02
0.1
Figure 8. Gate Charge Characteristics.
0.8
0.05
0.05
Q g , GATE CHARGE (nC)
Figure 7. Capacitance Characteristics.
0.2
VDS = 5.0V
4
3
2
1
5
10
, DRAI N-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
20
40
0
0.01
0.1
1
10
100
300
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum Power
Dissipation.
FDC6320C.Rev C
2
0.2
V GS = -5.0V
-4.5
-4.0
-3.5
RDS(ON), NORMALIZED
-3.0
0.15
-2.7
-2.5
0.1
-2.0
0.05
0
DRAIN-SOURCE ON-RESISTANCE
-I D , DRAIN-SOURCE CURRENT (A)
Typical Electrical Characteristics: P-Channel
V GS = -2.0 V
1.5
-2.7
-3.0
1
1
2
3
-4.0
-3.5
-4.5
0.5
0
-2.5
4
0
0.05
,DRAIN-SOURCE ON-RESISTANCE
I D = -0.05A
V GS = -2.7V
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
ID = -0.05A
TA= 25°C
20
125 °C
15
10
5
R DS(ON)
R DS(ON) , NORMALIZED
0.2
25
1.6
DRAIN-SOURCE ON-RESISTANCE
0.15
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 11. On-Region Characteristics.
0
0
1
2
3
4
5
6
7
8
-V GS ,GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation
with Temperature.
Figure 14. On Resistance Variation with
Gate-To- Source Voltage.
0.5
-1
T = -55°C
J
-I , REVERSE DRAIN CURRENT (A)
V DS = -5V
25°C
-0.75
125°C
-0.5
-0.25
VGS = 0V
0.1
TJ = 125°C
25°C
0.01
-55°C
S
I D , DRAIN CURRENT (A)
0.1
-I D , DRAIN CURRENT (A)
-VDS , DRAIN-SOURCE VOLTAGE (V)
0
-0.5
-1
-1.5
-2
-2.5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
-3
0.0001
0
0.2
0.4
0.6
0.8
1
-V SD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 16. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
FDC6320C.Rev C
Typical Electrical Characteristics: P-Channel (continued)
0.8
I D = -0.2A
VDS = -5V
6
-15
4
2
0.2
R
0.2
0.3
0.4
0.5
0.05
IT
10
0m
s
VGS = -2.7V
SINGLE PULSE
RθJA =See Note 1b
TA = 25°C
1
2
5
-V
DS
10
20
40
, DRAIN-SOURCE VOLTAGE (V)
Figure 18. Maximum Safe Operating Area.
Figure 17. Gate Charge Characteristics.
25
5
15
POWER (W)
Coss
5
3
f = 1 MHz
V GS = 0 V
1
0.1
SINGLE PULSE
RθJA =See note 1b
TA = 25°C
4
C iss
10
3
2
1
Crss
0.3
1
2
5
10
15
0
0.01
25
0.1
1
10
100
300
SINGLE PULSE TIME (SEC)
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 20. Single Pulse Maximum Power
Dissipation.
Figure 19. Capacitance Characteristics.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
CAPACITANCE (pF)
LIM
0.01
Q g , GATE CHARGE (nC)
2
N)
1s
DC
0.02
0.1
(O
DS
0.1
0
0
1m
s
10
m
s
0.5
-10
-ID , DRAIN CURRENT (A)
-V GS , GATE-SOURCE VOLTAGE (V)
8
0.5
D = 0.5
0.2
0.2
0.1
0.05
0.02
0.01
0.0001
RθJA (t) = r(t) * R θJA
R θJA = See Note 1b
0.1
P(pk)
0.05
t1
0.02
0.01
Single Pulse
t2
TJ - TA = P * R JA(t)
θ
Duty Cycle, D = t 1/ t 2
0.001
0.01
0.1
1
10
100
300
t 1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
FDC6320C.Rev C
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
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FAST 
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STAR*POWER™
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SuperSOT™-3
SuperSOT™-6
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4