ZDT1049 SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ABSOLUTE MAXIMUM RATINGS.

SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ZDT1049
ISSUE 1 – JANUARY 1996
C1
B1
C1
E1
C2
B2
C2
E2
SM-8
(8 LEAD SOT223)
PARTMARKING DETAIL – T1049
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
20
A
Continuous Collector Current
IC
5
A
500
mA
-55 to +150
°C
Base Current
IB
Operating and Storage Temperature Range
Tj:Tstg
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Total Power Dissipation at Tamb = 25°C*
Any single die “on”
Both die “on” equally
Ptot
Derate above 25°C*
Any single die “on”
Both die “on” equally
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
VALUE
UNIT
2.25
2.75
W
W
18
22
mW/ °C
mW/ °C
55.6
45.5
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
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ZDT1049
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V(BR)CBO
80
Collector-Emitter
Breakdown Voltage
VCES
Collector-Emitter
Breakdown Voltage
VCEO
Collector-Emitter
Breakdown Voltage
VCEV
Emitter-Base Breakdown
Voltage
V(BR)EBO
Collector Cut-Off Current
ICBO
0.3
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off
Current
ICES
UNIT
CONDITIONS.
120
V
IC=100µA
80
120
V
IC=100µA
25
35
V
IC=10mA
TYPICAL CHARACTERISTICS
1.0
1.0
+25°C
0.8
0.8
0.6
0.6
IC/IB=10
IC/IB=50
IC/IB=100
IC/IB=200
0.4
80
5
120
V
8.75
IC=100µA, VEB=1V
V
IE=100µA
10
nA
VCB=50V
0.3
10
nA
VEB=4V
0.3
10
nA
VCES=50V
0
Base-Emitter
Saturation Voltage
VBE(sat)
Base-Emitter Turn-On
Voltage
VBE(on)
Static Forward Current
Transfer Ratio
hFE
45
80
180
220
mV
mV
mV
mV
IC=0.5A, IB=10mA*
IC=1A, IB=10mA*
IC=2A, IB=10mA*
IC=4A, IB=50mA*
890
950
mV
IC=4A, IB=50mA*
-55°C
+25°C
+100°C
+175°C
0.2
1mA
10mA
100mA
1A
10A
100A
0
1mA
VCE(sat) v IC
500
300
1.4
1.2
fT
250
300
300
200
35
430
450
450
350
70
900
mV
1200
180
0.4
100
0.2
10mA
100mA
1A
10A
100A
0
10mA
VCB=10V, f=1MHz
Turn - On Time
ton
125
ns
IC=4A, IB=40mA, VCC=10V
Turn -Off Time
toff
380
ns
IC=4A, IB=±40mA, VCC=10V
60
100
VCE=2V
-55°C
+25°C
+100°C
0.8 +175°C
pF
45
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Singe Pulse Test Tamb = 25°C
10
1
0.4
0
1mA
0.1
10mA
100mA
1A
10A
100A
IC-Collector Current
DC
1s
100ms
10ms
1ms
100µs
0.1
0.1V
1V
10V
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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100A
VBE(sat) v IC
1.0
0.2
Cobo
1A
1.2
0.6
Output Capacitance
100mA
IC-Collector Current
hFE V IC
IC=50mA, VCE=10V
f=50MHz
MHz
10A
IC/IB=100
0.6
-55°C
200
1.4
100A
1.0
+25°C
IC=4A, VCE=2V*
IC=10mA, VCE=2V*
IC=0.5A, VCE=2V*
IC=1A, VCE=2V*
IC=4A, VCE=2V*
IC=20A, VCE=2V*
10A
-55°C
+25°C
+100°C
0.8 +175°C
+100°C
0
1mA
1A
VCE(sat) v IC
700 VCE=2V
600
100mA
IC-Collector Current
IC-Collector Current
820
10mA
IC-Collector Current
400
30
60
125
155
IC/IB=100
0.4
0.2
Collector-Emitter Saturation VCE(sat)
Voltage
Transition Frequency
MAX.
ZDT1049
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100V
ZDT1049
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V(BR)CBO
80
Collector-Emitter
Breakdown Voltage
VCES
Collector-Emitter
Breakdown Voltage
VCEO
Collector-Emitter
Breakdown Voltage
VCEV
Emitter-Base Breakdown
Voltage
V(BR)EBO
Collector Cut-Off Current
ICBO
0.3
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off
Current
ICES
UNIT
CONDITIONS.
120
V
IC=100µA
80
120
V
IC=100µA
25
35
V
IC=10mA
TYPICAL CHARACTERISTICS
1.0
1.0
+25°C
0.8
0.8
0.6
0.6
IC/IB=10
IC/IB=50
IC/IB=100
IC/IB=200
0.4
80
5
120
V
8.75
IC=100µA, VEB=1V
V
IE=100µA
10
nA
VCB=50V
0.3
10
nA
VEB=4V
0.3
10
nA
VCES=50V
0
Base-Emitter
Saturation Voltage
VBE(sat)
Base-Emitter Turn-On
Voltage
VBE(on)
Static Forward Current
Transfer Ratio
hFE
45
80
180
220
mV
mV
mV
mV
IC=0.5A, IB=10mA*
IC=1A, IB=10mA*
IC=2A, IB=10mA*
IC=4A, IB=50mA*
890
950
mV
IC=4A, IB=50mA*
-55°C
+25°C
+100°C
+175°C
0.2
1mA
10mA
100mA
1A
10A
100A
0
1mA
VCE(sat) v IC
500
300
1.4
1.2
fT
250
300
300
200
35
430
450
450
350
70
900
mV
1200
180
0.4
100
0.2
10mA
100mA
1A
10A
100A
0
10mA
VCB=10V, f=1MHz
Turn - On Time
ton
125
ns
IC=4A, IB=40mA, VCC=10V
Turn -Off Time
toff
380
ns
IC=4A, IB=±40mA, VCC=10V
60
100
VCE=2V
-55°C
+25°C
+100°C
0.8 +175°C
pF
45
100A
VBE(sat) v IC
Singe Pulse Test Tamb = 25°C
10
1.0
0.2
Cobo
1A
1.2
0.6
Output Capacitance
100mA
IC-Collector Current
hFE V IC
IC=50mA, VCE=10V
f=50MHz
MHz
10A
IC/IB=100
0.6
-55°C
200
1.4
100A
1.0
+25°C
IC=4A, VCE=2V*
IC=10mA, VCE=2V*
IC=0.5A, VCE=2V*
IC=1A, VCE=2V*
IC=4A, VCE=2V*
IC=20A, VCE=2V*
10A
-55°C
+25°C
+100°C
0.8 +175°C
+100°C
0
1mA
1A
VCE(sat) v IC
700 VCE=2V
600
100mA
IC-Collector Current
IC-Collector Current
820
10mA
IC-Collector Current
400
30
60
125
155
IC/IB=100
0.4
0.2
Collector-Emitter Saturation VCE(sat)
Voltage
Transition Frequency
MAX.
ZDT1049
1
0.4
0
1mA
0.1
10mA
100mA
1A
10A
100A
IC-Collector Current
DC
1s
100ms
10ms
1ms
100µs
0.1
0.1V
1V
10V
100V
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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