SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FZT755
ISSUE 5 – MARCH 2005
FEATURES
* 150 Volt VCEO
* Low saturation voltage
* Excellent hFE specified up to 1A (pulsed).
C
E
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
FZT655
FZT755
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V CBO
-150
V
Collector-Emitter Voltage
V CEO
-150
V
Emitter-Base Voltage
V EBO
-5
V
Peak Pulse Current
I CM
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at T amb=25°C
P tot
2
W
Operating and Storage Temperature Range
T j:T stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
C o l l e c t o r - B a s e V(BR)CBO
Breakdown Voltage
-150
V
IC=-100µA
C o l l e c t o r - E m i t t e r V(BR)CEO
Breakdown Voltage
-150
V
IC=-10mA*
-5
V
IE=-100µA
Emitter-Base
Breakdown Voltage
V(BR)EBO
Collector Cut-Off Current
ICBO
-0.1
µA
VCB=-125V
Emitter Cut-Off Current
IEBO
-0.1
µA
VEB=-3V
C o l l e c t o r - E m i t t e r VCE(sat)
Saturation Voltage
-0.5
-0.5
V
V
IC=-500mA, IB=-50mA*
IC=-1A, IB=-200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.1
V
IC=-500mA, IB=-50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-1.0
V
IC=-500mA, VCE=-5V*
Static Forward Current hFE
Transfer Ratio
50
50
20
Transition Frequency
fT
30
Output Capacitance
Cobo
IC=-10mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
300
MHz
20
pF
IC= - 1 0 m A ,
f=20MHz
VCE=-20V
VCB=-10V f=1MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
TBA
www.BDTIC.com/DIODES
FZT755
TYPICAL CHARACTERISTICS
td
tr
tf
µs
ts
µs
0.8
IB1=IB2=IC/10
VCE=10V
ts
0.6
0.4
Switching time
VCE(sat) - (Volts)
2.0 0.5
IC/IB=10
0.4
0.2
0
0.001
0.01
0.1
td
0.3
tf
1.0
0.2
tr
0.1
0
0.01
1
IC - Collector Current (Amps)
0.1
1
IC - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
1.0
IC/IB=10
80
VCE=5V
VBE(sat) - (Volts)
hFE - Normalised Gain (%)
100
60
40
20
0.001
0.01
0.1
1
0.8
0.6
0.4
0.2
10
0.001
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
IC - Collector Current (A)
VBE - (Volts)
VCE=5V
1.0
0.8
0.6
0.0001
0.001
0.01
0.1
1
1
Single Pulse Test at Tamb=25°C
10
1.2
0.4
0.1
0.01
1
DC
100ms
10ms
1ms
300µs
0.1
0.01
0.1
1
10
100
VCE - Collector Emitter Voltage (V)
IC - Collector Current (Amps)
VBE(on) v IC
Safe Operating Area
TBA
www.BDTIC.com/DIODES