ZDT795A SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ABSOLUTE MAXIMUM RATINGS.

SM-8 DUAL PNP MEDIUM POWER
TRANSISTORS
ZDT795A
ISSUE 1 - JULY 1999
C1
B1
C1
E1
C2
B2
C2
E2
SM-8
(8 LEAD SOT223)
PARTMARKING DETAIL – T795A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V CBO
-140
V
Collector-Emitter Voltage
V CEO
-140
V
Emitter-Base Voltage
V EBO
-5
V
Peak Pulse Current
I CM
-1
A
Continuous Collector Current
IC
Operating and Storage Temperature Range
T j :T stg
-0.5
A
-55 to +150
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Total Power Dissipation at T amb = 25°C*
Any single die “on”
Both die “on” equally
P tot
Derate above 25°C*
Any single die “on”
Both die “on” equally
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
VALUE
UNIT
2.25
2.75
W
W
18
22
mW/ °C
mW/ °C
55.6
45.5
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
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ZDT795A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
Collector-Base
Breakdown Voltage
V (BR)CBO
Collector-Emitter
Breakdown Voltage
TYP.
MAX.
UNIT
CONDITIONS.
-140
V
I C=-100µA, I E=0
V (BR)CEO
-140
V
I C=-10mA, I B=0*
Emitter-Base
Breakdown Voltage
V (BR)EBO
-5
V
I E=-100µA, I C=0
Collector Cutoff
Current
I CBO
-0.1
µA
V CB=-100V
Emitter Cutoff Current
I EBO
-0.1
µA
V EB=-4V, I E=0
Collector-Emitter
Saturation Voltage
V CE(sat)
-0.3
-0.3
-0.25
V
V
V
I C=-100mA, I B=-1mA*
I C=-200mA, I B=-5mA*
I C=-500mA, I B=-50mA*
Base-Emitter
Saturation Voltage
V BE(sat)
-0.95
V
I C=-500mA, I B=-50mA*
Base-Emitter
Turn-On Voltage
V BE(on)
V
I C =-500mA, V CE=-2V*
-0.75
Static Forward Current h FE
Transfer Ratio
300
250
100
Transition Frequency
fT
100
Output Capacitance
C obo
Switching Times
800
I C=-10mA, V CE=-2V*
I C=-200mA, V CE=-2V*
I C=-300mA, V CE=-2V*
MHz
I C=-50mA, V CE=-5V
f=50MHz
15
pF
V CB=-10V f=1MHz
t on
100
ns
I C=-100mA, V CC=-50V
I B1=I B2=-10mA
t off
1900
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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ZDT795A
TYPICAL CHARACTERISTICS
1.8
1.6
1.8
IC/IB=40
IC/IB=20
IC/IB=10
Tamb=25°C
1.6
1.4
VCE(sat) - (Volts)
VCE(sat) - (Volts)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IC/IB=40
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.1
1
10
0.1
1
10
VCE(sat) v IC
VCE(sat) v IC
+100°C
+25°C
-55°C
VCE=2V
1.6
750
1.2
1.0
500
0.8
0.6
250
0.4
0.2
1.4
-55°C
+25°C
+100°C
+175°C
IC/IB=10
1.2
1.0
0.8
0.6
0.4
0.2
0.01
1.6
0.01
IC - Collector Current (Amps)
1.4
0
0.001
VBE(sat) - (Volts)
1.6
0.01
IC - Collector Current (Amps)
hFE - Typical Gain
0.001
hFE - Normalised Gain
-55°C
+25°C
+100°C
+175°C
0.1
10
1
0
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
-55°C
+25°C
+100°C
10
VCE=2V
VBE - (Volts)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
IC - Collector Current (Amps)
VBE(on) v IC
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