BDTIC FD250R65KE3-K 技术信息/TechnicalInformation

技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD250R65KE3-K
高绝缘等级模块
highinsulatedmodule
BDTIC
VCES = 6500V
IC nom = 250A / ICRM = 500A
典型应用
• 中压变流器
• 牵引变流器
TypicalApplications
• MediumVoltageConverters
• TractionDrives
电气特性
• 低VCEsat
ElectricalFeatures
• LowVCEsat
机械特性
• 碳化硅铝（AlSiC）基板提供更高的温度循环能力
MechanicalFeatures
• AlSiC Base Plate for increased Thermal Cycling
Capability
• Extended Storage Temperature down to Tstg =
-55°C
• PackagewithCTI>600
• Package with enhanced Insulation of 10.2kV AC
1min
• HighCreepageandClearanceDistances
• 扩大存储温度范围至Tstg=-55°C
• 封装的CTI>600
• 加强绝缘封装，10.2kV交流1分钟
• 高爬电距离和电气间隙
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:DTH
dateofpublication:2014-06-16
approvedby:DTS
revision:3.0
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
www.BDTIC.com/infineon
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD250R65KE3-K
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage
Tvj = 125°C
Tvj = 25°C
Tvj = -50°C
VCES
6500
6500
5900
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
IC nom 250
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
500
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 150°C
Ptot
4,80
kW
VGES
+/-20
V
栅极－发射极峰值电压
Gate-emitterpeakvoltage
BDTIC
特征值/CharacteristicValues
min.
typ.
max.
3,00
3,70
3,40
4,20
V
V
6,0
6,6
V
集电极－发射极饱和电压
Collector-emittersaturationvoltage
IC = 250 A, VGE = 15 V
IC = 250 A, VGE = 15 V
栅极阈值电压
Gatethresholdvoltage
IC = 35,0 mA, VCE = VGE, Tvj = 25°C
VGEth
栅极电荷
Gatecharge
VGE = -15 V ... +15 V, VCE = 3600V
QG
10,0
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
2,3
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
69,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
1,05
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 6500 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
Tvj = 25°C
Tvj = 125°C
VCE sat
5,4
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 250 A, VCE = 3600 V
VGE = ±15 V
RGon = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
td on
0,70
0,80
µs
µs
上升时间(电感负载)
Risetime,inductiveload
IC = 250 A, VCE = 3600 V
VGE = ±15 V
RGon = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
tr
0,33
0,40
µs
µs
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 250 A, VCE = 3600 V
VGE = ±15 V
RGoff = 20 Ω
Tvj = 25°C
Tvj = 125°C
td off
7,30
7,60
µs
µs
下降时间(电感负载)
Falltime,inductiveload
IC = 250 A, VCE = 3600 V
VGE = ±15 V
RGoff = 20 Ω
Tvj = 25°C
Tvj = 125°C
tf
0,40
0,50
µs
µs
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 250 A, VCE = 3600 V, LS = 280 nH
VGE = ±15 V
RGon = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
Eon
1400
2200
mJ
mJ
关断损耗能量(每脉冲）
Turn-offenergylossperpulse
IC = 250 A, VCE = 3600 V, LS = 280 nH
VGE = ±15 V
RGoff = 20 Ω
Tvj = 25°C
Tvj = 125°C
Eoff
1200
1400
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 4500 V
VCEmax = VCES -LsCE ·di/dt
1500
A
结－外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
在开关状态下温度
Temperatureunderswitchingconditions
ISC
tP ≤ 10 µs, Tvj = 125°C
Tvj op
preparedby:DTH
dateofpublication:2014-06-16
approvedby:DTS
revision:3.0
www.BDTIC.com/infineon
2
26,1 K/kW
26,5
-50
K/kW
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD250R65KE3-K
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 125°C
Tvj = 25°C
Tvj = -50°C
VRRM 6500
6500
5900
V
IF
250
A
IFRM
500
A
I²t
52,0
kA²s
PRQM 1000
kW
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
最大损耗功率
Maximumpowerdissipation
Tvj = 125°C
BDTIC
最小开通时间
Minimumturn-ontime
ton min 特征值/CharacteristicValues
10,0
min.
typ.
max.
3,00
2,95
3,50
3,50
µs
正向电压
Forwardvoltage
IF = 250 A, VGE = 0 V
IF = 250 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 250 A, - diF/dt = 1000 A/µs (Tvj=125°C) Tvj = 25°C
Tvj = 125°C
VR = 3600 V
VGE = -15 V
IRM
370
400
A
A
恢复电荷
Recoveredcharge
IF = 250 A, - diF/dt = 1000 A/µs (Tvj=125°C) Tvj = 25°C
Tvj = 125°C
VR = 3600 V
VGE = -15 V
Qr
290
540
µC
µC
反向恢复损耗（每脉冲）
Reverserecoveryenergy
IF = 250 A, - diF/dt = 1000 A/µs (Tvj=125°C) Tvj = 25°C
Tvj = 125°C
VR = 3600 V
VGE = -15 V
Erec
470
1000
mJ
mJ
结－外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:DTH
dateofpublication:2014-06-16
approvedby:DTS
revision:3.0
www.BDTIC.com/infineon
3
V
V
56,0 K/kW
42,0
-50
125
K/kW
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD250R65KE3-K
二极管，制动-斩波器/Diode,Brake-Chopper
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 125°C
Tvj = 25°C
Tvj = -50°C
VRRM 6500
6500
5900
V
IF
250
A
IFRM
500
A
I²t
52,0
kA²s
PRQM 1000
kW
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
最大损耗功率
Maximumpowerdissipation
Tvj = 125°C
BDTIC
最小开通时间
Minimumturn-ontime
ton min 特征值/CharacteristicValues
10,0
min.
typ.
max.
3,00
2,95
3,50
3,50
µs
正向电压
Forwardvoltage
IF = 250 A, VGE = 0 V
IF = 250 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 250 A, - diF/dt = 1000 A/µs (Tvj=125°C) Tvj = 25°C
Tvj = 125°C
VR = 3600 V
VGE = -15 V
IRM
370
400
A
A
恢复电荷
Recoveredcharge
IF = 250 A, - diF/dt = 1000 A/µs (Tvj=125°C) Tvj = 25°C
Tvj = 125°C
VR = 3600 V
VGE = -15 V
Qr
290
540
µC
µC
反向恢复损耗（每脉冲）
Reverserecoveryenergy
IF = 250 A, - diF/dt = 1000 A/µs (Tvj=125°C) Tvj = 25°C
Tvj = 125°C
VR = 3600 V
VGE = -15 V
Erec
470
1000
mJ
mJ
结－外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:DTH
dateofpublication:2014-06-16
approvedby:DTS
revision:3.0
www.BDTIC.com/infineon
4
V
V
56,0 K/kW
42,0
-50
125
K/kW
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD250R65KE3-K
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL 10,2
kV
局部放电停止电压
Partialdischargeextinctionvoltage
RMS, f = 50 Hz, QPD typ 10 pC (acc. to IEC 1287)
VISOL 5,1
kV
DC稳定性
DCstability
Tvj = 25°C, 100 fit
VCE D 3800
V
AlSiC
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
AlN
爬电距离
Creepagedistance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
56,0
56,0
mm
电气间隙
Clearance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
26,0
26,0
mm
> 600
BDTIC
相对电痕指数
Comperativetrackingindex
CTI
min.
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
25
nH
RCC'+EE'
RAA'+CC'
0,36
0,36
mΩ
Tstg
-55
4,25
模块安装的安装扭距
Mountingtorqueformodulmounting
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
端子联接扭距
Terminalconnectiontorque
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
M
重量
Weight
G
dateofpublication:2014-06-16
approvedby:DTS
revision:3.0
www.BDTIC.com/infineon
5
max.
LsCE
储存温度
Storagetemperature
preparedby:DTH
typ.
125
°C
-
5,75
Nm
1,8
-
2,1
Nm
8,0
-
10
Nm
1000
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD250R65KE3-K
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=125°C
500
500
Tvj = 25°C
Tvj = 125°C
450
VGE = 20 V
VGE = 15 V
VGE = 12 V
VGE = 10 V
450
400
400
350
350
BDTIC
300
IC [A]
IC [A]
300
250
250
200
200
150
150
100
100
50
50
0
0,0
1,0
2,0
3,0
VCE [V]
4,0
5,0
0
6,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
1,0
2,0
3,0
4,0 5,0
VCE [V]
6,0
7,0
8,0
9,0
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=3Ω,RGoff=20.4Ω,VCE=3600V
500
6000
Tvj = 25°C
Tvj = 125°C
450
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
5000
400
350
4000
E [mJ]
IC [A]
300
250
3000
200
2000
150
100
1000
50
0
6
7
8
9
10
VGE [V]
11
12
0
13
preparedby:DTH
dateofpublication:2014-06-16
approvedby:DTS
revision:3.0
0
50
100 150 200 250 300 350 400 450 500
IC [A]
www.BDTIC.com/infineon
6
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD250R65KE3-K
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=250A,VCE=3600V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
5000
100
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
ZthJC : IGBT
4000
10
BDTIC
E [mJ]
ZthJC [K/kW]
3000
2000
1
1000
i:
1
2
3
4
ri[K/kW]: 1,32 16,86 5
2,88
τi[s]:
0,004 0,044 0,405 3,93
0
0
3
6
9
0,1
0,001
12 15 18 21 24 27 30 33 36
RG [Ω]
0,01
0,1
1
10
100
4,0
5,0
t [s]
正向偏压特性二极管,逆变器（典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
反偏安全工作区IGBT,逆变器（RBSOA）
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=20.4Ω
700
500
Tvj = 125°C
Tvj = 25°C
Tvj = -50°C
600
Tvj = 25°C
Tvj = 125°C
450
400
500
350
300
IF [A]
IC [A]
400
300
250
200
150
200
100
100
50
0
0
1000
2000
3000 4000
VCE [V]
5000
6000
0
7000
0,0
1,0
2,0
3,0
VF [V]
preparedby:DTH
dateofpublication:2014-06-16
approvedby:DTS
revision:3.0
www.BDTIC.com/infineon
7
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD250R65KE3-K
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=3Ω,VCE=3600V
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=250A,VCE=3600V
1500
1200
Erec, Tvj = 125°C
Erec, Tvj = 125°C
1250
1000
1000
800
E [mJ]
E [mJ]
BDTIC
750
600
500
400
250
200
0
0
50
0
100 150 200 250 300 350 400 450 500
IF [A]
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
0,0
1,0
2,0
3,0
4,0 5,0
RG [Ω]
6,0
7,0
8,0
9,0
安全工作区二极管,逆变器(SOA)
safeoperationareaDiode,Inverter(SOA)
IR=f(VR)
Tvj=125°C
100
600
ZthJC : Diode
IR, Modul
500
IR [A]
ZthJC [K/kW]
400
10
300
200
100
i:
1
2
3
4
ri[K/kW]: 8,07 34,47 8,46 4,83
τi[s]:
0,005 0,048 0,313 3,348
1
0,001
0,01
0,1
1
10
0
100
t [s]
preparedby:DTH
dateofpublication:2014-06-16
approvedby:DTS
revision:3.0
0
1000
2000
3000 4000
VR [V]
www.BDTIC.com/infineon
8
5000
6000
7000
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD250R65KE3-K
正向偏压特性二极管，制动-斩波器（典型)
forwardcharacteristicofDiode,Brake-Chopper(typical)
IF=f(VF)
开关损耗二极管，制动-斩波器（典型)
switchinglossesDiode,Brake-Chopper(typical)
Erec=f(IF)
RGon=3Ω,VCE=3600V
500
1500
Tvj = 25°C
Tvj = 125°C
450
Erec, Tvj = 125°C
1250
400
350
1000
BDTIC
E [mJ]
IF [A]
300
250
750
200
500
150
100
250
50
0
0,0
1,0
2,0
3,0
4,0
0
5,0
0
VF [V]
开关损耗二极管，制动-斩波器（典型)
switchinglossesDiode,Brake-Chopper(typical)
Erec=f(RG)
IF=250A,VCE=3600V
50
100 150 200 250 300 350 400 450 500
IF [A]
瞬态热阻抗二极管，制动-斩波器
transientthermalimpedanceDiode,Brake-Chopper
ZthJC=f(t)
1200
100
Erec, Tvj = 125°C
ZthJC : Diode
1000
ZthJC [K/kW]
E [mJ]
800
600
10
400
200
0
i:
1
2
3
4
ri[K/kW]: 8,07 34,47 8,46 4,83
τi[s]:
0,005 0,048 0,313 3,348
0,0
1,0
2,0
3,0
4,0 5,0
RG [Ω]
6,0
7,0
8,0
1
0,001
9,0
0,01
0,1
1
t [s]
preparedby:DTH
dateofpublication:2014-06-16
approvedby:DTS
revision:3.0
www.BDTIC.com/infineon
9
10
100
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD250R65KE3-K
安全工作区二极管，制动-斩波器(SOA)
safeoperationareaDiode,Brake-Chopper(SOA)
IR=f(VR)
Tvj=125°C
600
IR, Modul
500
400
IR [A]
BDTIC
300
200
100
0
0
1000
2000
3000 4000
VR [V]
5000
6000
7000
preparedby:DTH
dateofpublication:2014-06-16
approvedby:DTS
revision:3.0
www.BDTIC.com/infineon
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD250R65KE3-K
接线图/circuit_diagram_headline
BDTIC
封装尺寸/packageoutlines
preparedby:DTH
dateofpublication:2014-06-16
approvedby:DTS
revision:3.0
www.BDTIC.com/infineon
11
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD250R65KE3-K
使用条件和条款
使用条件和条款
产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合
产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证
请注意安装及应用指南中的信息。
如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询
www.infineon.com）。对那些特别感兴趣的问题我们将提供相应的应用手册
由于技术需要，我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门
如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。
请注意，对这类应用我们强烈建议
-执行联合的风险和质量评估
-得到质量协议的结论
-建立联合的测试和出厂产品检查，我们可以根据测试的实际情况供货
如果有必要，请根据实际需要将类似的说明给你的客户
保留产品规格书的修改权
BDTIC
Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
salesoffice,whichisresponsibleforyou.
ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
-theconclusionofQualityAgreements;
-toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon
therealizationofanysuchmeasures.
Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.
preparedby:DTH
dateofpublication:2014-06-16
approvedby:DTS
revision:3.0
www.BDTIC.com/infineon
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