FF600R12ME4C 技术信息/TechnicalInformation

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12ME4C
EconoDUAL™3模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管带有温度检测NTC
EconoDUAL™3modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandNTC
BDTIC
VCES = 1200V
IC nom = 600A / ICRM = 1200A
典型应用
• 大功率变流器
• 电机传动
• 伺服驱动器
• UPS系统
• 风力发电机
TypicalApplications
• HighPowerConverters
• MotorDrives
• ServoDrives
• UPSSystems
• WindTurbines
电气特性
• 低VCEsat
• Tvjop=150°C
• VCEsat带正温度系数
ElectricalFeatures
• LowVCEsat
• Tvjop=150°C
• VCEsatwithpositiveTemperatureCoefficient
机械特性
• 高功率密度
• 绝缘的基板
• 标封装
MechanicalFeatures
• HighPowerDensity
• IsolatedBasePlate
• StandardHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:KY
dateofpublication:2013-11-05
approvedby:MK
revision:3.0
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
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1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12ME4C
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1200
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
600
1060
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
1200
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
4050
W
栅极－发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
BDTIC
特征值/CharacteristicValues
集电极－发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 600 A, VGE = 15 V
IC = 600 A, VGE = 15 V
IC = 600 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 23,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
A
A
typ.
max.
1,75
2,00
2,05
2,10
V
V
V
VGEth
5,2
5,8
6,4
V
VGE = -15 V ... +15 V
QG
4,40
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
1,2
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
37,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
2,05
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
3,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
td on
0,18
0,22
0,22
µs
µs
µs
tr
0,07
0,08
0,08
µs
µs
µs
td off
0,45
0,55
0,59
µs
µs
µs
tf
0,07
0,11
0,12
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGon = 0,51 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGon = 0,51 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,51 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 600 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,51 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 600 A, VCE = 600 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 7000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 0,51 Ω
Tvj = 150°C
Eon
29,0
47,0
53,5
mJ
mJ
mJ
关断损耗能量(每脉冲）
Turn-offenergylossperpulse
IC = 600 A, VCE = 600 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3100 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 0,51 Ω
Tvj = 150°C
Eoff
55,0
81,5
90,0
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
结－外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,035
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:KY
dateofpublication:2013-11-05
approvedby:MK
revision:3.0
tP ≤ 10 µs, Tvj = 150°C
www.BDTIC.com/infineon
2
2700
A
0,037 K/W
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12ME4C
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 1200
V
IF
600
A
IFRM
1200
A
I²t
35000
33000
特征值/CharacteristicValues
min.
typ.
max.
1,90
1,85
1,80
2,30
A²s
A²s
正向电压
Forwardvoltage
IF = 600 A, VGE = 0 V
IF = 600 A, VGE = 0 V
IF = 600 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 600 A, - diF/dt = 7000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
385
490
520
A
A
A
恢复电荷
Recoveredcharge
IF = 600 A, - diF/dt = 7000 A/µs (Tvj=150°C) Tvj = 25°C
Tvj = 125°C
VR = 600 V
Tvj = 150°C
VGE = -15 V
Qr
55,5
110
125
µC
µC
µC
反向恢复损耗（每脉冲）
Reverserecoveryenergy
IF = 600 A, - diF/dt = 7000 A/µs (Tvj=150°C) Tvj = 25°C
Tvj = 125°C
VR = 600 V
Tvj = 150°C
VGE = -15 V
Erec
28,0
50,5
60,0
mJ
mJ
mJ
结－外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,0395
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
BDTIC
V
V
V
0,071 K/W
K/W
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:KY
dateofpublication:2013-11-05
approvedby:MK
revision:3.0
www.BDTIC.com/infineon
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12ME4C
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL 2,5
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
14,5
13,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
12,5
10,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 200
BDTIC
min.
typ.
max.
LsCE
20
nH
RCC'+EE'
1,00
mΩ
Tstg
-40
125
°C
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
端子联接扭距
Terminalconnectiontorque
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
3,0
-
6,0
Nm
重量
Weight
G
345
g
preparedby:KY
dateofpublication:2013-11-05
approvedby:MK
revision:3.0
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
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4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12ME4C
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
1200
1200
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1000
1000
800
800
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
IC [A]
IC [A]
BDTIC
600
600
400
400
200
200
0
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
0
3,5
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=0.51Ω,RGoff=0.51Ω,VCE=600V
1200
200
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
175
1000
150
800
E [mJ]
IC [A]
125
600
100
75
400
50
200
25
0
5
6
7
8
9
VGE [V]
10
11
12
0
13
preparedby:KY
dateofpublication:2013-11-05
approvedby:MK
revision:3.0
0
200
400
600
IC [A]
www.BDTIC.com/infineon
5
800
1000
1200
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12ME4C
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=600A,VCE=600V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
200
0,1
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
175
ZthJC : IGBT
150
125
ZthJC [K/W]
E [mJ]
BDTIC
100
0,01
75
50
i:
1
2
3
4
ri[K/W]: 0,0038 0,0312 0,0001 0,002
τi[s]:
0,0007 0,0247 0,05
3,4847
25
0
0
1
2
3
4
0,001
0,001
5
0,01
RG [Ω]
0,1
t [s]
1
10
正向偏压特性二极管,逆变器（典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
反偏安全工作区IGBT,逆变器（RBSOA）
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=0.51Ω,Tvj=150°C
1300
1200
IC, Modul
IC, Chip
1200
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1100
1000
1000
900
800
700
IF [A]
IC [A]
800
600
600
500
400
400
300
200
200
100
0
0
200
400
600
800
VCE [V]
1000
1200
0
1400
preparedby:KY
dateofpublication:2013-11-05
approvedby:MK
revision:3.0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6
VF [V]
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6
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12ME4C
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=0.51Ω,VCE=600V
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=600A,VCE=600V
70
70
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
60
60
50
50
BDTIC
E [mJ]
40
E [mJ]
40
30
30
20
20
10
10
0
0
200
400
600
IF [A]
800
1000
0
1200
0
1
2
3
4
5
RG [Ω]
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
0,1
100000
ZthJC : Diode
Rtyp
R[Ω]
ZthJC [K/W]
10000
0,01
1000
i:
1
2
3
4
ri[K/W]: 0,0093 0,0079 0,0471 0,0063
τi[s]:
0,0006 0,0142 0,0271 0,9747
0,001
0,001
0,01
0,1
t [s]
1
100
10
preparedby:KY
dateofpublication:2013-11-05
approvedby:MK
revision:3.0
0
20
40
60
80
100
TC [°C]
www.BDTIC.com/infineon
7
120
140
160
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12ME4C
接线图/circuit_diagram_headline
BDTIC
封装尺寸/packageoutlines
Infineon
preparedby:KY
dateofpublication:2013-11-05
approvedby:MK
revision:3.0
www.BDTIC.com/infineon
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF600R12ME4C
使用条件和条款
使用条件和条款
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请注意安装及应用指南中的信息。
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Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
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ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
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preparedby:KY
dateofpublication:2013-11-05
approvedby:MK
revision:3.0
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