BDTIC Digital Transistors (Built-in Resistors) DTC143TM/DTC143TE/DTC143TUA DTC143TKA /DTC143TCA/DTC143TSA

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
DTC143TM/DTC143TE/DTC143TUA
DTC143TKA /DTC143TCA/DTC143TSA
·Equivalent Circuit
DIGITAL TRANSISTOR (NPN)
FEATURES

Built-in bias resistors enable the configuration of an inverter circuit
BDTIC
without connecting external input resistors(see equivalent circuit)

The bias resistors consist of thin-film resistors with complete isolation
to allow negative biasing of the input.They also have the advantage of
almost completely eliminating parasitic effects

Only the on/off conditions need to be set for operation, making device design easy
PIN CONNENCTIONS and MARKING
DTC143TM
SOT-723
1. IN
2. GND
2. GND
3. OUT
3. OUT
MARKING: 03
SOT-323
DTC143TKA
SOT-23-3L
1. IN
1. IN
2. GND
2. GND
3. OUT
3. OUT
MARKING: 03
DTC143TCA
SOT-523
1. IN
MARKING:03
DTC143TUA
DTC143TE
MARKING: 03
SOT-23
DTC143TSA
TO-92S
1. IN
1. GND
2. GND
2. OUT
3. OUT
3. IN
MARKING: 03
www.BDTIC.com/jcst
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Limits(DTC143T□)
Parameter
M
E
UA
CA
Unit
KA
SA
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
100
mA
IC
Collector Current
PD
Power Dissipation
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
100
150
200
200
200
300
mW
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
BDTIC
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=50µA,IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50µA,IC=0
5
V
Collector cut-off current
ICBO
VCB=50V,IE=0
0.5
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.5
μA
IC=5mA,IB=0.25mA
0.3
V
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Input resistor
R1
Transition frequency
fT
VCE=5V,IC=1mA
100
3.29
VCE=10V,IE=-5mA, f=100MHz
www.BDTIC.com/jcst
600
4.7
250
6.11
kΩ
MHz
Typical Characterisitics
DTC143TXX
hFE
Static Characteristic
1000
(mA)
8
COMMON
EMITTER
Ta=25℃
50uA
IC
——
o
Ta=100 C
hFE
45uA
40uA
DC CURRENT GAIN
COLLECTOR CURRENT
10
IC
12
35uA
30uA
6
25uA
20uA
4
o
Ta=25 C
100
15uA
2
10uA
IB=5uA
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VBEsat
100
——
VCE
10
0.1
6
(V)
VCE=5V
1
10
COLLECTOR CURRENT
IC
VCEsat
1
IC
100
(mA)
IC
——
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
BDTIC
10
Ta=25℃
Ta=100℃
1
Ta=100℃
0.1
Ta=25℃
β=20
β=20
0.1
0.01
1
10
100
COLLECTOR CURRENT
IC
100
——
IC
1
10
100
COLLECTOR CURRENT
(mA)
VBE
100
Cob/ Cib
——
IC
(mA)
VCB/ VEB
f=1MHz
IE=0/ IC=0
o
(pF)
10
Cib
10
C
Ta=100℃
Ta=25℃
CAPACITANCE
COLLCETOR CURRENT
IC
(mA)
Ta=25 C
1
Cob
1
VCE=5V
0.1
0.1
1
10
BASE-EMMITER VOLTAGE
PD
350
——
VBE
0.1
0.1
1
REVERSE VOLTAGE
(V)
Ta
DTC143TSA
POWER DISSIPATION
PD (mW)
300
250
DTC143TUA/CA/KA
200
DTC143TE
150
DTC143TM
100
50
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
10
V
(V)
20