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BDTIC Digital Transistors (Built-in Resistors) DTA143TM/DTA143TE/DTA143TUA DTA143TKA /DTA143TCA/DTA143TSA

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BDTIC Digital Transistors (Built-in Resistors) DTA143TM/DTA143TE/DTA143TUA DTA143TKA /DTA143TCA/DTA143TSA
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
DTA143TM/DTA143TE/DTA143TUA
DTA143TKA /DTA143TCA/DTA143TSA
·Equivalent Circuit
DIGITAL TRANSISTOR (PNP)
FEATURES

Built-in bias resistors enable the configuration of an inverter circuit
BDTIC
without connecting external input resistors(see equivalent circuit)

The bias resistors consist of thin-film resistors with complete isolation to
allow positive biasing of the input.They also have the advantage of
almost completely eliminating parasitic effects

Only the on/off conditions need to be set for operation, making device design easy
PIN CONNENCTIONS and MARKING
DTA143TM
SOT-723
1. IN
2. GND
2. GND
3. OUT
3. OUT
MARKING:93
SOT-323
DTA143TKA
SOT-23-3L
1. IN
1. IN
2. GND
2. GND
3. OUT
3. OUT
MARKING:93
DTA143TCA
SOT-523
1. IN
MARKING:93
DTA143TUA
DTA143TE
MARKING:93
SOT-23
DTA143TSA
TO-92S
1. IN
1. GND
2. GND
2. OUT
3. OUT
3. IN
MARKING:93
www.BDTIC.com/jcst
B,Mar,2012
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Limits(DTA143T□)
Parameter
M
E
UA
KA
Unit
CA
SA
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
-100
mA
IC
Collector Current
PD
Power Dissipation
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
100
150
200
200
200
300
mW
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
BDTIC
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=-50µA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50µA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-0.5
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.5
μA
IC=-5mA,IB=-0.25mA
-0.3
V
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Input resistor
R1
Transition frequency
fT
VCE=-5V,IC=-1mA
100
3.29
VCE=-10V,IE=5mA, f=100MHz
www.BDTIC.com/jcst
600
4.7
250
6.11
kΩ
MHz
B,Mar,2012
Typical Characteristics
DTA143TXX
ON Characteristics
OFF Characteristics
-100
-10
VCE=-0.3V
VCE=-5V
-1
IC
-10
COLLECTOR CURRENT
INPUT VOLTAGE
VI(ON)
(V)
(mA)
-30
-3
Ta=25℃
-1
Ta=100℃
Ta=100℃
-0.1
Ta=25℃
-0.01
-0.3
BDTIC
-0.1
-0.1
-0.3
-1
COLLECTOR CURRENT
hFE
-30
-10
-3
——
IC
-1E-3
-0.0
-100
-0.2
(mA)
-0.4
-0.6
INPUT VOLTAGE
VI(OFF)
VCEsat ——
IC
-0.8
-1.0
(V)
IC
-1
1000
IC/IB=20
COLLECTOR EMITTER VOLTAGE
DC CURRENT GAIN
hFE
VCEsat
(V)
VCE=-5V
Ta=100℃
300
Ta=25℃
-3
-10
COLLECTOR CURRENT
CO
——
-100
-30
IC
Ta=100℃
Ta=25℃
-0.03
-3
-1
-0.3
-10
COLLECTOR CURRENT
(mA)
PD
VR
——
IC
-30
-100
125
150
(mA)
Ta
400
10
f=1MHz
Ta=25℃
350
CO
PD
(pF)
(mW)
8
POWER DISSIPATION
6
OUTPUT CAPACITANCE
-0.1
-0.01
-0.1
100
-1
-0.3
4
DTA143TSA
300
250
200
150
100
DTA143TUA/CA/KA
DTA143TE
DTA143TM
2
50
0
0
0
4
8
12
REVERSE BIAS VOLTAGE
16
VR
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
www.BDTIC.com/jcst
100
Ta
(℃ )
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