3DD13003

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors
TO-251-3L/TO-252-2L
3DD13003
TRANSISTOR ( NPN )
FEATURES
Power Switching Applications
MAXIMUM RATINGS(TA=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
1.. BASE
Unit
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current -Continuous
1.5
A
1.25
W
2. COLLECTOR
BDTIC
Collector Dissipation
PC
TJ, Tstg
Junction and Storage Temperature
3. EMITTER
℃
-55~+150
ELECTRICAL CHARA CTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=
=
1mA,IE 0
700
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic==
10 mA,IB 0
400
V
Emitter-base breakdown voltage
V(BR)EBO
9
V
=
IE= 1mA, IC 0
Collector cut-off current
ICBO
=
VCB= 700V,IE 0
1
mA
Collector cut-off current
ICEO
=
VCE= 400V,IB 0
0.5
mA
Emitter cut-off current
IEBO
1
mA
DC current gain
=
VEB= 9 V, IC 0
hFE（1）
VCE= 5 V, IC= 0.5 A
8
hFE（2）
VCE= 5 V, IC= 1.5A
5
40
Collector-emitter saturation voltage
VCE(sat)
IC=1A,IB= 250 mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=1A, IB= 250mA
1.2
V
Base-emitter voltage
VBE
3
V
Transition frequency
fT
Fall time
tf
IC= 1A,IB1=-IB2=0.2A
VCC=100V
Storage time
ts
IC=250mA
IE= 2A
VCE=10V,Ic=100mA
5
f =1MHz
MHz
2
0.5
µs
4
µs
CLASSIFICATION OF hFE(1)
Rank
Range
8-10
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION OF tS
Rank
A1
Range
2-2.5 (μs )
A2
2.5-3(μs )
B1
3-3.5(μs )
www.BDTIC.com/jcst
B2
3.5-4 (μs )
Typical Characteristics
3DD13003
Static Characteristic
1.00
COMMON EMITTER
Ta=25℃
30mA
DC CURRENT GAIN
IC
35mA
25mA
0.50
20mA
15mA
0.25
IC
Ta=100℃
hFE
40mA
0.75
——
COMMON EMITTER
VCE= 5V
50mA
45mA
COLLECTOR CURRENT
(A)
hFE
100
Ta=25℃
10
10mA
IB=5mA
0.00
1
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1200
6
7
1
10
VCE (V)
IC
VCEsat
1000
1000 1500
100
COLLECTOR CURRENT
——
IC
(mA)
IC
BDTIC
β=4
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=4
800
600
Ta=25℃
Ta=100 ℃
400
200
0.1
10
IC
(mA)
——
IC
℃
25
T a=
1
10
(mA)
VBE
PC
1.50
1000 1500
100
COLLECTOR CURRENT
——
IC
(mA)
Ta
COMMON EMITTER
VCE=5V
100
10
T=
a 25
℃
T=
a 10
0℃
IC
COLLECTOR CURRENT
100
1000 1500
100
COLLECTOR CURREMT
1500
1000
0℃
10
T a=
10
1
COLLECTOR POWER DISSIPATION
PC (W)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
1000
1
0.1
0
200
400
600
BASE-EMMITER VOLTAGE VBE (mV)
800
1000
1.25
1.00
0.75
0.50
0.25
0.00
0
25
50
75
AMBIENT TEMPERATURE
www.BDTIC.com/jcst
100
Ta
125
(℃ )
150