SOT-89-3L Plastic-Encapsulate Transistors BCX54,BCX55,BCX56

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
BCX54,BCX55,BCX56
TRANSISTOR (NPN)
1. BASE
FEATURES
z PNP Complements to BCX51,BCX52,BCX53
z Low Voltage
z High Current
2. COLLECTOR
3. EMITTER
APPLICATIONS
z Driver Stages of Audio Amplifiers
BDTIC
MARKING:BCX54:BA, BCX54-10:BC, BCX54-16:BD
BCX55:BE, BCX55-10:BG, BCX55-16BM
BCX56:B H, BCX56-10:BK, BCX56-16:BL
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Value
BCX54
45
BCX55
60
BCX56
100
BCX54
45
BCX55
60
BCX56
80
Unit
V
V
Emitter-Base Voltage
5
V
IC
Collector Current
1
A
PC
Collector Power Dissipation
500
mW
Thermal Resistance From Junction To Ambient
250
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
www.BDTIC.com/jcst
* Pulse Test
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO*
T est
conditions
IC=100µA,IE=0
IC=10mA,IB=0
V(BR)EBO
IE=100µA,IC=0
ICBO
VCB=30V,IE=0
Collector cut-off current
Emitter cut-off current
Min
BCX54
45
BCX55
60
BCX56
100
BCX54
45
BCX55
60
BCX56
80
Typ
Max
Unit
V
V
5
V
0.1
µA
0.1
µA
IEBO
VEB=5V,IC=0
hFE(1)*
VCE=2V, IC=5mA
40
hFE(2)*
VCE=2V, IC=150mA
63
hFE(3)*
VCE=2V, IC=0.5A
25
VCE(sat)*
IC=0.5A,IB=50mA
0.5
V
Base -emitter voltage
VBE*
VCE=2V, IC=0.5A
1
V
Transition frequency
fT
BDTIC
DC current gain
Collector-emitter saturation voltage
VCE=5V,IC=10mA, f=100MHz
250
130
CLASSIFICATION OF hFE(2)
BCX54
BCX54-10
BCX54-16
RANK
BCX55
BCX55-10
BCX55-16
BCX56
BCX56-10
BCX56-16
RANGE
63–250
63–160
100–250
www.BDTIC.com/jcst
MHz
Typical Characteristics
Static Characteristic
(mA)
250
hFE
IC
——
IC
COMMON EMITTER
VCE=2V
COMMON
EMITTER
Ta=25℃
0.9mA
DC CURRENT GAIN
0.8mA
150
hFE
1000
1.0mA
200
COLLECTOR CURRENT
BCX54,BCX55,BCX56
0.7mA
0.6mA
100
0.5mA
0.4mA
0.3mA
50
Ta=100℃
300
Ta=25℃
100
30
0.2mA
IB=0.1mA
0
10
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
——
VCE
5
1
10
(V)
100
COLLECTOR CURRENT
IC
VBEsat
1.0
IC
——
1000
(mA)
IC
BDTIC
β=10
BASE-EMMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
300
100
Ta=100℃
Ta=25℃
30
10
10
100
COLLECTOR CURRENT
IC
1000
(mA)
——
IC
1
10
(mA)
100
COLLECTOR CURRENT
VBE
Cob/ Cib
300
——
IC
1000
(mA)
VCB/ VEB
f=1MHz
IE=0/IC=0
Cib
100
Ta=25℃
(pF)
Ta=100℃
C
100
Ta=25℃
10
1
0.2
0.4
0.6
0.8
BASE-EMITTER VOLTAGE
fT
——
VBE
Cob
10
1
0.1
1.0
1
0.3
(V)
IC
PC
600
COLLECTOR POWER DISSIPATION
PC (mW)
fT
100
COMMON EMITTER
VCE=5V
10
3
REVERSE BIAS VOLTAGE
(MHz)
500
CAPACITANCE
IC
Ta=100℃
0.6
1000
COMMON EMITTER
VCE=2V
COLLECTOR CURRENT
Ta=25℃
0.4
1
TRANSITION FREQUENCY
0.8
——
V
20
(V)
Ta
500
400
300
200
100
Ta=25℃
10
10
0
www.BDTIC.com/jcst
100
30
COLLECTOR CURRENT
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150