TO-92 Plastic-Encapsulate Transistors S8550

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92
Plastic-Encapsulate Transistors
TO-92
S8550 TRANSISTOR (PNP)
1. EMITTER
FEATURE
Excellent hFE Linearity
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-500
mA
Collector Dissipation
625
mW
Junction Temperature
150
℃
-55-150
℃
PC
TJ
Tstg
BDTIC
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -100uA, IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA, IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100uA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -40V, IE=0
-0.1
uA
Collector cut-off current
ICEO
VCE= -20V, IB=0
-0.1
uA
Emitter cut-off current
IEBO
VEB= - 3V, IC=0
-0.1
uA
hFE(1)
VCE= -1V, IC= -50mA
85
hFE(2)
VCE= -1V, IC= -500mA
50
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB=-50mA
-0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=-500mA, IB=-50mA
-1.2
V
400
DC current gain
VCE=- 6V, IC=-20mA,
fT
Transition frequency
150
f =30MHz
MHz
CLASSIFICATION OF hFE(1)
Rank
B
C
D
D3
Range
85-160
120-200
160-300
300-400
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S8550
Typical Characteristics
hFE
Static Characteristic
-90
-400uA
COMMON
EMITTER
Ta=25℃
-360uA
Ta=100℃
-320uA
hFE
(mA)
-60
-280uA
DC CURRENT GAIN
COLLECTOR CURRENT
-70
IC
-80
-240uA
-50
-200uA
-40
-160uA
-30
IC
——
500
-120uA
Ta=25℃
100
-80uA
-20
IB=-40uA
-10
COMMON EMITTER
VCE=-1V
-0
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
-10
10
-12
-1
-10
VCE (V)
-100
COLLECTOR CURRENT
IC
VCEsat
IC
-500
(mA)
IC
——
BDTIC
-500
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
-1200
2 5℃
T a=
-800
1
T a=
00 ℃
-100
0℃
10
T a=
℃
25
T a=
β=10
β=10
-10
-400
-1
-10
-100
COLLECTOR CURRENT
IC
-100
COLLECTOR CURRENT
(mA)
fT
VBE
——
400
IC
-500
(mA)
IC
(MHz)
——
-10
fT
-100
TRANSITION FREQUENCY
T =2
5℃
a
T =1
00 ℃
a
COLLECTOR CURRENT
IC
(mA)
-500
IC
-1
-500
-10
COMMON EMITTER
VCE=-1V
100
COMMON EMITTER
VCE=-6V
Ta=25℃
10
-1
-0
-300
-600
-900
-1
-1200
-10
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
(pF)
Cib
Cob
CAPACITANCE
C
PC
750
50
10
-100
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
f=1MHz
IE=0/IC=0
——
IC
(mA)
Ta
625
500
375
250
125
Ta=25 ℃
1
-0.1
0
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-1
REVERSE VOLTAGE
-10
V
(V)
-20
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
(℃ )
150