TO-92 Plastic-Encapsulate Transistors 8050SS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
8050SS
TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
FEATURES
z General Purpose Switching and Amplification.
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
PC
Collector Power Dissipation
1.5
A
1
W
Thermal Resistance From Junction To Ambient
125
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA,IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=0.1mA,IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=40V,IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=20V,IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
hFE(1)
VCE=1V, IC=100mA
85
hFE(2)
VCE=1V, IC=800mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=800mA,IB=80mA
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC=800mA,IB=80mA
1.2
V
DC current gain
300
Base-emitter voltage
VBE
VCE=1V, IC=10mA
1.0
V
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
15
pF
fT
Transition frequency
VCE=10V,IC= 50mA, f=30MHz
100
MHz
CLASSIFICATION OF hFE(1)
RANK
B
C
D
RANGE
85-160
120-200
160-300
B,Jan,2012
www.BDTIC.com/jcst
8050SS
Typical Characteristics
Static Characteristic
0.30
hFE
0.8mA
0.20
DC CURRENT GAIN
(A)
0.9mA
IC
COLLECTOR CURRENT
COMMON
EMITTER
Ta=25℃
1mA
0.25
hFE
1000
0.7mA
0.6mA
0.15
0.5mA
0.4mA
0.10
——
IC
Ta=100℃
300
Ta=25℃
100
0.3mA
0.2mA
0.05
COMMON EMITTER
VCE= 1V
IB=0.1mA
0.00
10
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
——
6
7
1
10
VCE (V)
100
COLLECTOR CURRENT
IC
VBEsat ——
1200
1000 1500
IC
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
1000
100
Ta=100 ℃
Ta=25℃
10
800
Ta=25℃
600
Ta=100 ℃
400
β=10
1
1
10
100
COLLECTOR CURREMT
IC
1500
——
IC
β=10
1000 1500
1
10
COLLECTOR CURREMT
(mA)
VBE
Cob/Cib
100
——
100
IC
VCB/VEB
f=1MHz
IE=0/IC=0
1000
Ta=25 ℃
(pF)
(mA)
Cib
CAPACITANCE
T=
a 25
℃
T=
a 10
0℃
100
C
IC
COLLECTOR CURRENT
1000 1500
(mA)
10
Cob
10
COMMON EMITTER
VCE= 1V
1
0.1
1
0
300
600
900
1200
1
BESE-EMMITER VOLTAGE VBE (mV)
IC
fT
TRANSITION FREQUENCY
PC
1.2
(MHz)
——
COLLECTOR POWER DISSIPATION
PC (W)
fT
1000
10
REVERSE VOLTAGE
100
10
COMMON EMITTER
VCE=10V
——
V
20
(V)
Ta
1.0
0.8
0.6
0.4
0.2
Ta=25℃
1
2
10
0.0
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COLLECTOR CURRENT
100
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
(℃ )
125
150
B,Jan,2012