TO-92 Plastic-Encapsulate Transistors 2SC536N

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SC536N
TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
FEATURES
z Large Current Capacity and Wide ASO.
3. BASE
APPLICATIONS
z Capable of Being Used in The Low Frequency to High
Frequency Range.
BDTIC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
150
mA
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.01mA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.01mA,IC=0
6
V
Collector cut-off current
ICBO
VCB=40V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
hFE(1)
VCE=6V, IC=1mA
160
hFE(2)
VCE=6V, IC=0.1mA
70
DC current gain
560
Collector-emitter saturation voltage
VCE(sat)
IC=100mA,IB=10mA
0.3
V
Base-emitter saturation voltage
VBE (sat)
IC=100mA,IB=10mA
1
V
Collector output capacitance
Transition frequency
Cob
VCE=6V, f=1MHz
3
pF
fT
VCE=6V,IC= 10mA
200
MHz
CLASSIFICATION OF hFE(1)
RANK
F
G
RANGE
160-320
280-560
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Typical Characteristics
2SC536N
Static Characteristic
1.6
hFE
1000
7.2uA
COLLECTOR CURRENT
DC CURRENT GAIN
IC
6.4uA
1.0
5.6uA
4.8uA
0.8
4.0uA
0.6
3.2uA
2.4uA
0.4
Ta=100℃
hFE
(mA)
8.0uA
1.2
IC
COMMON EMITTER
VCE= 6V
COMMON EMITTER Ta=25℃
1.4
——
Ta=25℃
100
1.6uA
0.2
IB=0.8uA
0.0
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1000
7
10
0.1
8
1
IC
VCEsat
1000
100 150
10
COLLECTOR CURRENT
VCE (V)
——
IC
(mA)
IC
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
800
Ta=25℃
600
Ta=100 ℃
400
0.1
100 150
10
COLLECTOR CURREMT
IC
——
IC
0.3
1
10
VBE
PC
750
——
100 150
IC
(mA)
Ta
COMMON EMITTER
VCE=6V
T =2
a
5℃
T=
a 10
0℃
IC
COLLECTOR CURRENT
Ta=25℃
COLLECTOR CURREMT
10
1
0.1
300
Ta=100 ℃
(mA)
(mA)
150
100
100
10
1
COLLECTOR POWER DISSIPATION
PC (mW)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
β=10
600
BASE-EMMITER VOLTAGE VBE (mV)
900
1200
625
500
375
250
125
0
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
125
(℃ )
150